CN102412286A - 一种高速锗硅hbt器件结构及其制造方法 - Google Patents
一种高速锗硅hbt器件结构及其制造方法 Download PDFInfo
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- CN102412286A CN102412286A CN2011103426924A CN201110342692A CN102412286A CN 102412286 A CN102412286 A CN 102412286A CN 2011103426924 A CN2011103426924 A CN 2011103426924A CN 201110342692 A CN201110342692 A CN 201110342692A CN 102412286 A CN102412286 A CN 102412286A
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CN102412286A true CN102412286A (zh) | 2012-04-11 |
CN102412286B CN102412286B (zh) | 2014-05-21 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111883425A (zh) * | 2020-07-16 | 2020-11-03 | 上海华虹宏力半导体制造有限公司 | 应用于hbt器件制造中的刻蚀方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5557118A (en) * | 1993-12-20 | 1996-09-17 | Nec Corporation | Hetero-junction type bipolar transistor |
US20070290231A1 (en) * | 2006-06-15 | 2007-12-20 | Freescale Semiconductor, Inc. | Method of manufacturing a bipolar transistor and bipolar transistor thereof |
US20080176391A1 (en) * | 2007-01-24 | 2008-07-24 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor device |
US20090321880A1 (en) * | 2008-06-27 | 2009-12-31 | Shigetaka Aoki | Semiconductor device |
WO2010066630A1 (de) * | 2008-12-12 | 2010-06-17 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Bipolartransistor mit selbstjustiertem emitterkontakt |
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2011
- 2011-11-03 CN CN201110342692.4A patent/CN102412286B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5557118A (en) * | 1993-12-20 | 1996-09-17 | Nec Corporation | Hetero-junction type bipolar transistor |
US20070290231A1 (en) * | 2006-06-15 | 2007-12-20 | Freescale Semiconductor, Inc. | Method of manufacturing a bipolar transistor and bipolar transistor thereof |
US20080176391A1 (en) * | 2007-01-24 | 2008-07-24 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor device |
US20090321880A1 (en) * | 2008-06-27 | 2009-12-31 | Shigetaka Aoki | Semiconductor device |
WO2010066630A1 (de) * | 2008-12-12 | 2010-06-17 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Bipolartransistor mit selbstjustiertem emitterkontakt |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111883425A (zh) * | 2020-07-16 | 2020-11-03 | 上海华虹宏力半导体制造有限公司 | 应用于hbt器件制造中的刻蚀方法 |
CN111883425B (zh) * | 2020-07-16 | 2022-08-16 | 上海华虹宏力半导体制造有限公司 | 应用于hbt器件制造中的刻蚀方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140107 |
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