CN102412313B - 一种采用SiGe HBT工艺的MOS可变电容及其制作方法 - Google Patents
一种采用SiGe HBT工艺的MOS可变电容及其制作方法 Download PDFInfo
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- CN102412313B CN102412313B CN201110311539.5A CN201110311539A CN102412313B CN 102412313 B CN102412313 B CN 102412313B CN 201110311539 A CN201110311539 A CN 201110311539A CN 102412313 B CN102412313 B CN 102412313B
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US7936045B2 (en) * | 2007-06-11 | 2011-05-03 | Infineon Technologies Ag | Integrated circuit with multi-stage matching circuit |
CN102104062A (zh) * | 2009-12-21 | 2011-06-22 | 上海华虹Nec电子有限公司 | 双极晶体管 |
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CN101964359B (zh) * | 2009-07-24 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 双极晶体管及其形成方法、虚拟接地电路 |
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US7936045B2 (en) * | 2007-06-11 | 2011-05-03 | Infineon Technologies Ag | Integrated circuit with multi-stage matching circuit |
CN102104062A (zh) * | 2009-12-21 | 2011-06-22 | 上海华虹Nec电子有限公司 | 双极晶体管 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140109 |
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