CN102412170B - 多方向上反射的光源的采集系统和方法 - Google Patents

多方向上反射的光源的采集系统和方法 Download PDF

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Publication number
CN102412170B
CN102412170B CN201110208025.7A CN201110208025A CN102412170B CN 102412170 B CN102412170 B CN 102412170B CN 201110208025 A CN201110208025 A CN 201110208025A CN 102412170 B CN102412170 B CN 102412170B
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China
Prior art keywords
fine rule
light source
light
wafer
image
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CN201110208025.7A
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Chinese (zh)
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CN102412170A (zh
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阿曼努拉·阿杰亚拉里
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Semiconductor Technologies and Instruments Inc
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Semiconductor Technologies and Instruments Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • G01N2021/8825—Separate detection of dark field and bright field
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8845—Multiple wavelengths of illumination or detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Microscoopes, Condenser (AREA)
CN201110208025.7A 2010-07-13 2011-07-13 多方向上反射的光源的采集系统和方法 Active CN102412170B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG2010050854A SG177786A1 (en) 2010-07-13 2010-07-13 System and method for capturing illumination reflected in multiple directions
SG201005085-4 2010-07-13

Publications (2)

Publication Number Publication Date
CN102412170A CN102412170A (zh) 2012-04-11
CN102412170B true CN102412170B (zh) 2015-08-19

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CN201110208025.7A Active CN102412170B (zh) 2010-07-13 2011-07-13 多方向上反射的光源的采集系统和方法

Country Status (11)

Country Link
US (1) US9746426B2 (ja)
EP (2) EP2407772A1 (ja)
JP (1) JP5866704B2 (ja)
KR (1) KR101863128B1 (ja)
CN (1) CN102412170B (ja)
HK (1) HK1243176A1 (ja)
IL (1) IL214513A (ja)
MY (1) MY167163A (ja)
PT (1) PT3223001T (ja)
SG (1) SG177786A1 (ja)
TW (1) TWI558996B (ja)

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CN103778421B (zh) * 2012-10-18 2018-01-12 中芯国际集成电路制造(上海)有限公司 读取晶圆标识的方法及晶圆标识读取装置
JP6101176B2 (ja) * 2013-08-30 2017-03-22 富士フイルム株式会社 光学特性測定装置及び光学特性測定方法
US9772297B2 (en) 2014-02-12 2017-09-26 Kla-Tencor Corporation Apparatus and methods for combined brightfield, darkfield, and photothermal inspection
JP6425945B2 (ja) * 2014-08-21 2018-11-21 東洋アルミニウム株式会社 インターコネクタ用光拡散部材及びこれを備える太陽電池用インターコネクタ、並びに太陽電池モジュール
KR101602580B1 (ko) * 2014-10-31 2016-03-10 세메스 주식회사 웨이퍼 검사 방법
CN108351310B (zh) * 2015-10-28 2021-05-18 日本碍子株式会社 蜂窝结构体的端面检查方法以及端面检查装置
JP6531184B2 (ja) * 2016-01-08 2019-06-12 株式会社Ｓｃｒｅｅｎホールディングス 欠陥検出装置および欠陥検出方法
JP6746718B2 (ja) 2016-05-30 2020-08-26 ボブスト メックス ソシエテ アノニムＢｏｂｓｔ Ｍｅｘ ＳＡ 画像取り込みシステム及びシート要素上のエンボス構造の位置を決定する方法
TWI628428B (zh) * 2016-12-16 2018-07-01 由田新技股份有限公司 多視角影像擷取裝置、及其多視角影像檢測設備
KR102429614B1 (ko) * 2017-06-08 2022-08-04 삼성전자주식회사 테스트 시스템, 테스트 방법 및 이들을 이용한 반도체 장치의 제조 방법
US10402963B2 (en) * 2017-08-24 2019-09-03 Kla-Tencor Corporation Defect detection on transparent or translucent wafers
JP6955932B2 (ja) * 2017-08-25 2021-10-27 株式会社ディスコ レーザービームプロファイラユニット及びレーザー加工装置
US10545096B1 (en) 2018-10-11 2020-01-28 Nanotronics Imaging, Inc. Marco inspection systems, apparatus and methods
TWI699465B (zh) * 2019-05-16 2020-07-21 亞亞科技股份有限公司 晶圓內外層取像裝置
CN112129772A (zh) * 2019-06-24 2020-12-25 杭州元色科技有限公司 缺陷检测系统以及方法
US10915992B1 (en) 2019-08-07 2021-02-09 Nanotronics Imaging, Inc. System, method and apparatus for macroscopic inspection of reflective specimens
US11593919B2 (en) 2019-08-07 2023-02-28 Nanotronics Imaging, Inc. System, method and apparatus for macroscopic inspection of reflective specimens
CN111340715B (zh) * 2019-09-19 2024-02-06 杭州海康慧影科技有限公司 一种图像的网格纹弱化方法、装置及电子设备
CN113363175B (zh) * 2020-03-05 2024-06-11 联华电子股份有限公司 设有基板扫描器的基板处理设备
US11508590B2 (en) * 2021-04-15 2022-11-22 Jnk Tech Substrate inspection system and method of use thereof
US11987884B2 (en) 2021-04-15 2024-05-21 Jnk Tech Glass and wafer inspection system and a method of use thereof

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CN1845305A (zh) * 2005-04-08 2006-10-11 力晶半导体股份有限公司 晶片缺陷检测方法与系统以及存储媒体

Also Published As

Publication number Publication date
EP3223001B1 (en) 2022-07-13
JP5866704B2 (ja) 2016-02-17
PT3223001T (pt) 2022-08-16
KR101863128B1 (ko) 2018-06-01
IL214513A0 (en) 2011-11-30
CN102412170A (zh) 2012-04-11
HK1243176A1 (zh) 2018-07-06
SG177786A1 (en) 2012-02-28
KR20120006952A (ko) 2012-01-19
US20120013899A1 (en) 2012-01-19
TWI558996B (zh) 2016-11-21
TW201226889A (en) 2012-07-01
EP2407772A1 (en) 2012-01-18
US9746426B2 (en) 2017-08-29
MY167163A (en) 2018-08-13
EP3223001A1 (en) 2017-09-27
JP2012021983A (ja) 2012-02-02
IL214513A (en) 2016-02-29

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