CN102386859A - Wide band amplifier with frequency compensation - Google Patents
Wide band amplifier with frequency compensation Download PDFInfo
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- CN102386859A CN102386859A CN2010102689970A CN201010268997A CN102386859A CN 102386859 A CN102386859 A CN 102386859A CN 2010102689970 A CN2010102689970 A CN 2010102689970A CN 201010268997 A CN201010268997 A CN 201010268997A CN 102386859 A CN102386859 A CN 102386859A
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Abstract
The invention provides a wide band amplifier with frequency compensation, wherein the working frequency range of a circuit of the amplifier can be expanded by means of frequency compensation. The wide band amplifier has a structure of an input/output circuit, wherein the circuit structure comprises a first transconductance amplifying unit, a second transconductance unit equivalent to a load circuit, two frequency compensation resistors embedded to a feedback loop of the second transconductance unit, and two capacitors equivalent to the load introduced by a post-stage circuit. The first transconductance amplifying unit has a structure of an input/output circuit, and is connected in series with the second transconductance unit of the feedback circuit structure. Two frequency compensation resistors are respectively matched with a parasitic input resistor at corresponding input end of the second transconductance unit to form a capacitance-resistance low-pass filter circuit by which a zero point is introduced in a transmission function of the wide band amplifier to expand the frequency working range of the wide band amplifier under the effect of the loop feedback. The wide band amplifier provided by the invention is used as the base amplifier unit applied to a radio frequency simulating front end of a receiver so as to achieve amplifying of an intermediate frequency signal. The wide band amplifier can also be applied to other systems to achieve amplification of a broadband.
Description
Technical field
The invention belongs to the twireless radio-frequency communication technical field, relate to wide-band amplifier, relate in particular to a kind of frequency compensated wide-band amplifier, be applied to CMOS radio frequency integrated receiver circuit, be used to realize the amplification of intermediate-freuqncy signal.
Background technology
In CMOS radio frequency integrated receiver circuit, radiofrequency signal down-converts to intermediate-freuqncy signal after amplifying through radio frequency, and the selection of IF-FRE is relevant with system architecture, does not wait to tens MHz from several MHz.Intermediate-freuqncy signal after the down-conversion suppresses out of band signal through the on-chip active filter, and the automatic gain control circuit (AGC) through the rear end further amplifies afterwards, delivers to digital to analog converter (ADC) at last and carries out quantization encoding, supplies digital baseband to handle.For reducing the noise effect of active filter, can add a gain stage circuit in the active filter prime usually.Central rate is higher again and again, needs the amplifier circuit in broadband, can consume more power consumption when adopting common structural, and bandwidth is not easy to do very highly yet.Amplifier unit in the automatic gain control circuit of back level also will be worked under same bandwidth, and this moment, power consumed will be bigger.
Present wide-band amplifier is especially in the amplifier unit design of automatic gain control circuit; For realizing high frequency characteristic; All adopt resistance to do load; This kind circuit structure can reduce parasitic capacitance, but the output level of wide-band amplifier output is difficult for regulating usually, between gain and output level, exists contradiction.Existing document proposes to adopt active pull-up to do load and realizes high frequency characteristic, though can solve the contradiction between gain and the output level, the parasitic capacitance that active load is introduced can cause bandwidth to reduce, when being operated in upper frequency, also can increased power dissipation.
The present invention is the wide-band amplifier based on the active pull-up load, proposes a kind of frequency compensation technology, can solve the contradiction between gain and the output level, neither can cause bandwidth to reduce, and under identical power consumption, the bandwidth of circuit can enlarge more than the twice.
Summary of the invention
The objective of the invention is to overcome the defective of prior art, thereby proposition is a kind of through the technological wide-band amplifier circuit that has improved operating frequency range of frequency compensation, the present invention realizes through following technical scheme.
A kind of frequency compensated wide-band amplifier adopts difference input/output circuitry structure, and its circuit formation that is this wide-band amplifier comprises:
One first mutual conductance amplifying unit;
One second transconductance cell, this transconductance cell is feedback connecting circuit structure, it is connected in series with the first mutual conductance amplifying unit;
Two resistance, it embeds and is connected in second transconductance cell, is used for frequency compensation; And
Two electric capacity are used to be equivalent to the capacitive load that late-class circuit is introduced.
A kind of frequency compensated wide-band amplifier, it is that the said first mutual conductance amplifying unit is the circuit structure of difference I/O, its two differential input ends connect two difference input voltage signals; Two difference output ends of the first mutual conductance amplifying unit are with corresponding one by one being connected in series of two differential feedback ends that embeds two frequency compensation resistance, also with two corresponding one by one being connected in parallel of electric capacity that are equivalent to load; The first mutual conductance amplifying unit is used for the applied signal voltage amplification and converts current signal into.
The two-way differential input end of the first mutual conductance amplifying unit difference output end and second transconductance cell is connected in series, and the first mutual conductance amplifying unit and second transconductance cell are determining the DC current gain in this amplifier broadband.
A kind of frequency compensated wide-band amplifier, it is that said second transconductance cell adopts the feedback type of attachment for feedback connecting circuit structure, equivalence becomes a load circuit; Equivalent load as the first mutual conductance amplifying unit; Equivalent load Z
InExpression formula does
In the formula: S is the frequency parameter, C
Gm2Be input parasitic capacitance, g
M2Be the transconductance cell transconductance value, R is a compensation resistance values;
The second transconductance cell equivalence during dc state is a resistance, and its resistance is the inverse of this transconductance cell transconductance value, i.e. 1/g
M2
A kind of frequency compensated wide-band amplifier, it is that said two frequency compensation resistance are the active resistance element of MOSFET, or is channel mask resistance, integrated respectively embedding is connected between the input of second transconductance cell output feedback end and second transconductance cell.Adopt the embodiment of the frequency compensation of channel mask resistance, adopt the frequency compensation of the active resistance element resistance of MOSFET another embodiment as technical scheme as technical scheme.
A kind of frequency compensated wide-band amplifier; It is that said two frequency compensation resistance constitute low-pass filter circuit with the parasitic input capacitance of the second transconductance cell respective input separately; This low-pass filter circuit is through the negative feedback of loop; In the transfer function of wide-band amplifier, introduce a zero point, be used to make the frequency scope of wide-band amplifier to obtain broadening.Can adjust the zero point in this wide-band amplifier transfer function through the frequency compensation resistance value.
A kind of frequency compensated wide-band amplifier; Its first mutual conductance amplifying unit that is said wide-band amplifier is the amplifying stage module; This amplifying stage module is the fully differential trsanscondutance amplifier structure that has tail current source, saves power consumption, and common-mode signal is played good inhibition effect.
A kind of frequency compensated wide-band amplifier; Its first mutual conductance amplifying unit that also is said wide-band amplifier is the amplifying stage module; This amplifying stage module or be fully differential source class negative feedback structure is used to improve the gain linearity degree of wide-band amplifier, and common-mode signal is played good inhibition effect.
A kind of frequency compensated wide-band amplifier; Its first mutual conductance amplifying unit that also is said wide-band amplifier is the amplifying stage module; This amplifying stage module can or be a pseudo-differential trsanscondutance amplifier structure also, is used to improve the gain linearity degree of wide-band amplifier, and suitable low supply voltage work.
A kind of frequency compensated wide-band amplifier, it is second transconductance cell in the said wide-band amplifier, the circuit structure for the fully differential trsanscondutance amplifier that has tail current source also can adopt and the identical structure of the first mutual conductance amplifying unit.
A kind of frequency compensated wide-band amplifier, second transconductance cell that it also is in the said wide-band amplifier also can be pseudo-differential transconductance amplifier circuit structure; Be used to improve the gain linearity degree of wide-band amplifier; Avoid the application of common mode feedback circuit, reduce parasitic capacitance, and save power consumption.
A kind of frequency compensated wide-band amplifier, it is the wide-band amplifier integration module of said first mutual conductance amplifying unit and second transconductance cell that embeds frequency compensation resistance, as preferably, adopts CMOS technology to realize.
A kind of frequency compensated wide-band amplifier; It is that said second transconductance cell is the feedback circuit structure of difference I/O; Insert a frequency compensation resistance respectively between its two difference output ends and the input; These two frequency compensation resistance embed two feedback control loops that are connected to second transconductance cell one by one, constitute the differential feedback circuit structure; The feedback end of the negative output of second transconductance cell connects an end of a frequency compensation resistance, the other end of frequency compensation resistance be connected to second transconductance cell positive input terminal; The feedback end of the positive output of second transconductance cell connects an end of another frequency compensation resistance, and the other end of frequency compensation resistance is connected to the negative input end of second transconductance cell; Corresponding again positive output end and the negative output terminal that is connected to first transconductance cell of the negative output terminal of second transconductance cell and positive output end, two outputs of second transconductance cell electric capacity that is equivalent to load that respectively is connected in parallel.
Frequency compensated wide-band amplifier circuit adopts the difference input/output structure; Comprise two transconductance cell that adopt CMOS technology to realize; One of them mutual conductance is an amplifying unit; Another is the transconductance cell that the unit negative feedback connects, and also comprises the electric capacity of two frequency compensation resistance and two equivalent late-class circuit loads.
The input of the first mutual conductance amplifying unit connects input voltage signal, and its output is connected to the equivalent load resistance that is made up of second transconductance cell and frequency compensation resistance, is also connected to load capacitance.The function of electric current is realized input voltage is amplified and converts in this unit, and it and second transconductance cell are determining the DC current gain of this amplifier together.
Second transconductance cell adopts negative feedback to connect, and frequency compensation resistance is embedded in this feedback control loop simultaneously.The output plus terminal of this unit feeds back, and through behind the frequency compensation resistance, is connected to its input negative terminal; Its output negative terminal feeds back, and through behind the frequency compensation resistance, is connected to its input anode.The output of this unit is connected respectively to the output of first transconductance cell again, is also connected to load capacitance.The transconductance cell that this negative feedback structure connects equivalence when direct current becomes a resistance, and its resistance is the inverse of the transconductance value of this transconductance cell.
Two frequency compensation resistance are connected between the input of the second transconductance cell output and second transconductance cell.This frequency compensation resistance with the parasitic input capacitance of the second transconductance cell input, is introduced a zero point in the transfer function of whole wide-band amplifier, thereby is made the operating frequency range of amplifier be enhanced.
Substantial effect of the present invention:
1, the present invention adopts the wide-band amplifier frequency compensation technology of active pull-up load, can effectively increase the operational frequency bandwidth of amplifier, reduces parasitic capacitance, saves power consumption.
2, circuit structure of the present invention is simple, and physical circuit is easy to adopt multiple version to realize.
3, the present invention is based on the wide-band amplifier of active pull-up load, propose a kind of frequency compensation, solve the contradiction between gain and the output level, both guaranteed the circuit working bandwidth, under identical power consumption, bandwidth can enlarge more than the twice through simulating, verifying.
4, the present invention is applied to CMOS radio frequency integrated receiver circuit, constitutes intermediate frequency amplifier, realizes the enlarging function to intermediate-freuqncy signal, also can be applicable in other system, realizes the broadband enlarging function.
Description of drawings
Fig. 1 is the single-ended connecting circuit figure that prior art adopts active pull-up load amplifier structure.
Among Fig. 1,11 is the first mutual conductance amplifying unit, and 12 is second transconductance cell, C
LBe equivalent load capacitance.
Fig. 2 is the equivalent single-ended connecting circuit figure that Fig. 1 active pull-up load amplifier is introduced the side circuit parasitic antenna.
Among Fig. 2, C
0Be parasitic capacitance, 1/g
0Be dead resistance, C
Gs2Be parasitic capacitance.
Fig. 3 is the single-ended catenation principle figure of a kind of frequency compensation wide-band amplifier circuit figure of first embodiment of the invention.
Among Fig. 3, R
CBe compensating resistance, Z
InEquiva lent impedance for second transconductance cell that embeds compensating resistance.
Fig. 4 a is the differential configuration circuit theory diagrams of a kind of frequency compensation wide-band amplifier circuit of Fig. 3 second embodiment of the invention.
Among Fig. 4 a, 41 is the first mutual conductance amplifying unit of differential configuration, and 42 is second transconductance cell of differential configuration, R
C+Be the compensating resistance of in-phase input end, R
C-Be the compensating resistance of inverting input, C
L+Be the equivalent load capacitance of in-phase output end, C
L-Equivalent load capacitance for reversed-phase output.
Fig. 4 b is the differential configuration equivalent circuit theory figure that a kind of frequency compensation wide-band amplifier of Fig. 4 a second embodiment of the invention is introduced the side circuit parasitic antenna.
Among Fig. 4 b, in-phase input end parasitic antenna: C
0+Be parasitic capacitance, 1/g
0+Be dead resistance, C
Gs2+Be parasitic capacitance; Inverting input parasitic antenna: C
0-Be parasitic capacitance, 1/g
0-Be dead resistance, C
Gs2-Be parasitic capacitance.
Fig. 5 a is that second embodiment of the invention frequency compensation resistance is a kind of frequency compensation wide-band amplifier difference connecting circuit schematic diagram of active resistance element.
Fig. 5 b is that second embodiment of the invention frequency compensation resistance is a kind of frequency compensation wide-band amplifier difference connecting circuit schematic diagram of channel mask resistance.
Among Fig. 5 a and Fig. 5 b, 51 is the first mutual conductance amplifying unit of differential configuration, and 52 is second transconductance cell of differential configuration, R
C+And R
C-Be compensating resistance.
Fig. 6 is the difference connecting circuit schematic diagram of the circuit structure of frequency compensation wide-band amplifier the 3rd embodiment of the present invention.
61 is the first mutual conductance amplifying unit of differential configuration among the figure, and 62 is second transconductance cell of differential configuration, R
C+And R
C-Be compensating resistance.
Fig. 7 is that Fig. 5 a adopts resnstance transformer embodiment circuit and the wide-band amplifier frequency response oscillogram that does not adopt the resnstance transformer circuit.
Embodiment
Below in conjunction with accompanying drawing and embodiment technical scheme of the present invention is further described.
Described in background, the method for classical realization wide-band amplifier is to adopt resistance to do load, and output level can not satisfy the input requirement of late-class circuit usually when still adopting resistance to do load, between output level and gain, has contradiction.The way that solves this contradiction is exactly to adopt structure as shown in Figure 1, adopts active equivalent resistance to do load, introduces the single-ended type of attachment of only having drawn among the figure for convenient.Mutual conductance 11 is as the mutual conductance amplifying unit among Fig. 1, and transconductance value is g
Ml, its input connects input voltage signal, and its output connects the equivalent load resistance that is connected and composed by mutual conductance 12 negative feedbacks, also connects load capacitance.This mutual conductance 11 realizes input voltage is amplified and converts into the function of electric current, and it and second mutual conductance 12 are determining the DC current gain of this amplifier together.Mutual conductance 12, transconductance value are g
M2, adopt the equivalence of negative feedback type of attachment to become resistance, its resistance is 1/g
M2Capacitor C
LBe load capacitance, be used for the load effect that equivalent late-class circuit is introduced.Load resistance adopts active mutual conductance equivalence to realize that the mutual conductance value can be adjusted, and the output common mode level is regulated easily simultaneously, to satisfy back level input range requirement, guarantees direct coupling.Adopt bigger mutual conductance just can realize lower load resistance, realize higher limit, promptly bigger bandwidth.
Among Fig. 1, the transfer function of amplifier is:
Consider the various ghost effects in the side circuit, the equivalent circuit diagram of Fig. 1 is as shown in Figure 2, wherein, and C
0=C
01+ C
02, g
0=g
01+ g
02C
0Be the parasitic capacitance C that two trsanscondutance amplifiers are introduced at output
01With C
02Sum, 1/g
0Be the dead resistance 1/g that two trsanscondutance amplifiers are introduced at output
01With 1/g
02Sum, C
Gs2It is the input parasitic capacitance of second transconductance cell.
Wherein, C
01With C
02Be respectively the output parasitic capacitance of mutual conductance 11 and 12, g
01With g
02It is respectively the output admittance of mutual conductance 11 and 12.C
Gs2It is the input parasitic capacitance of mutual conductance 12.The transfer function of amplifier is among Fig. 2:
When the load resistance of amplifier adopts active trsanscondutor equivalent resistance to realize, can consume more power consumption, in the time will realizing bigger bandwidth, just need bigger power consumption.Bigger power consumption just requires bigger breadth length ratio, and also meaning to have bigger parasitic capacitance, thereby causes power consumption further to increase.Under the prerequisite that guarantees bandwidth of operation, how to reduce power consumption, be technological difficulties of this circuit.
The present invention inserts a compensating resistance R in feedback loop on the basis of Fig. 2
C, in the transfer function of amplifier, introduced a zero point, the pair amplifier gain curve plays frequency compensated effect, has increased bandwidth.Circuit diagram is as shown in Figure 3, and it is exactly the frequency compensation resistance R with the different of Fig. 2
C, being embedded between the output and input in the feedback control loop of mutual conductance 12, this frequency compensation resistance is with the parasitic input capacitance C of the input of mutual conductance 12
Gs2Together, in the transfer function of whole wide-band amplifier, introduce bandwidth frequency zero point, reduce the speed that gain descends, improved bandwidth, thereby made the frequency scope of amplifier be enhanced.
The equiva lent impedance Z on dotted line the right from Fig. 3
InBe the equiva lent impedance of second transconductance cell of the embedding compensating resistance introduced at the first mutual conductance amplifying unit output, equiva lent impedance Z
InExpression formula is:
In the formula, S is the frequency parameter, R
CBe compensation resistance values;
Total transfer function expression formula of wide-band amplifier is among Fig. 3:
C=C wherein
o+ C
L
From expression formula, can calculate the zero point and the limit of total transfer function, control the distribution of total transfer function zero point and limit through the regulating element parameter, can be so that the bandwidth of amplifier be increased to more than two times.
What Fig. 3 circuit diagram adopted is single-ended type of attachment; Fig. 4 a and Fig. 4 b have provided the type of attachment of its difference; Wherein Fig. 4 a is the circuit diagram when not considering the ghost effect element; Fig. 4 b is the circuit diagram when having considered the ghost effect element, among the figure in the element title subscript+with-represent in-phase end and end of oppisite phase respectively.
The electrical schematic diagram of the wide-band amplifier circuit embodiment that the frequency compensation that adopts the present invention to propose is technological is shown in Fig. 5 a and Fig. 5 b.
First embodiment
The embodiment of the wide-band amplifier circuit way of realization that it is active resistance element that Fig. 5 a has provided a kind of frequency compensation resistance.Wherein the first trsanscondutance amplifier module 51 adopts source class negative feedback transconductance structures, improving the linearity, and common-mode signal is played the good restraining effect.The second mutual conductance module 52 is the active load module, adopts pseudo-differential mutual conductance equivalence output resistance structure, improves the linearity of load resistance, makes the input stage of output common mode level and late-class circuit directly to be coupled simultaneously.
Form by input stage, biasing circuit, tail current source, load current source in the first trsanscondutance amplifier module 51.Metal-oxide-semiconductor M5, M6 constitutes tail current source; Metal-oxide-semiconductor M1, M2 constitutes differential input stage; Metal-oxide-semiconductor M3, M4 constitutes load current source; Metal-oxide-semiconductor M7, M8, M9 forms biasing circuit, for the tail current source capsule and the load current source capsule of trsanscondutance amplifier provides bias voltage.Electric current I
RefBe outside reference, for biasing circuit provides bias current.M5 wherein, M6, the grid of M7 pipe is connected in parallel with grid and the drain electrode that M9 manages.M3, the grid of M4 pipe is connected to the grid and the drain electrode of biasing circuit M8 pipe.Difference input pipe M1, the grid of M2, corresponding input signal Vin-and the Vin+ that connects the outside.Difference input pipe M1, the drain electrode of M2 and load current source capsule M3, the drain electrode correspondence of M4 is connected in parallel, and is connected to the difference output end Vout+ and the Vout-of the second mutual conductance module 52 as the difference output end of first trsanscondutance amplifier.Resistance R
fBe the source class negative feedback resistor, be used for improving the linear input range of amplifier.
The second mutual conductance module 52 is made up of input stage, biasing circuit, load current source.Metal-oxide-semiconductor M10, M11 constitutes input stage; M12, M13 constitutes load current source; M14, M15 constitutes biasing circuit, for the load current source capsule provides bias voltage.M12, the grid of M13 connects grid and the drain electrode of M14.The grid of M15 pipe connects the outside bias voltage V that provides
CM, being used for to the M15 pipe provides biasing, it is determining the output level of this overall amplifier.Two frequency compensation resistance R
C+And R
C-Be the active resistance element of MOSFET, frequency compensation resistance R
C-Be connected grid and the drain electrode of input pipe M10, R
C+Be connected grid and the drain electrode of input pipe M11.The drain electrode of M10 is the reversed-phase output Vout-of load blocks 52 and the output of amplifying stage module 51, i.e. the drain electrode of M2 is connected.The drain electrode of M11 is the in-phase output end Vout+ of load blocks 52 and another output of amplifying stage module 51, i.e. the drain electrode of M1 is connected.The resistance of the active resistance element of MOSFET can realize the programming adjustment.Second
Embodiment
Fig. 5 b has provided another embodiment that a kind of compensating resistance is the wide-band amplifier circuit way of realization of channel mask resistance.Amplifier circuit way of realization and Fig. 5 a amplifier circuit way of realization are basic identical, two frequency compensation resistance R
C+And R
C-Be channel mask resistance, technology realizes simpler, and the resistance of resistive element is adjusted through designing when realizing.
The 3rd embodiment
The electrical schematic diagram of another embodiment of the wide-band amplifier circuit that the frequency compensation that adopts the present invention to propose is technological is as shown in Figure 6, and Fig. 6 has provided the 3rd embodiment of the different wide-band amplifier circuit way of realization of another kind of structure.Wherein the first trsanscondutance amplifier module 61 adopts the classical fully differential trsanscondutance amplifier structure that has tail current source, saves power consumption, and common-mode signal is played the good restraining effect.The second mutual conductance module 62 is the active load module, adopts and the same fully differential trsanscondutance amplifier structure that has tail current source of the first trsanscondutance amplifier module, and equivalence is the load of output, saves power consumption.When adopting the circuit of this structure, need to adopt common mode feedback circuit (CMFB) to stablize the common mode electrical level of output, make the input stage of output common mode level and late-class circuit directly to be coupled.
Form by input stage, biasing circuit, tail current source, load current source in the first trsanscondutance amplifier module 61.Metal-oxide-semiconductor M5 constitutes tail current source; Metal-oxide-semiconductor M1, M2 constitutes differential input stage; Metal-oxide-semiconductor M3, M4 constitutes load current source; Metal-oxide-semiconductor M11 constitutes biasing circuit, for the tail current source capsule of trsanscondutance amplifier provides bias voltage.Electric current I
RefBe outside reference, for biasing circuit provides bias current.Wherein the grid and the drain electrode of the grid of M5 pipe and M11 pipe are connected in parallel.M3, the grid of M4 pipe is connected to the output of common-mode feedback in 62 modules (CMFB) module.Difference input pipe M1, the grid of M2, corresponding input signal Vin-and the Vin+ that connects the outside.Difference input pipe M1, the drain electrode of M2 and load current source capsule M3, the drain electrode correspondence of M4 is connected in parallel, and is connected to the difference output end Vout+ and the Vout-of the second mutual conductance module 62 as the difference output end of first trsanscondutance amplifier.
The second mutual conductance module 62 is made up of input stage, biasing circuit, tail current source, load current source.Metal-oxide-semiconductor M6, M7 constitutes input stage; M8, M9 constitutes load current source; M10 constitutes tail current source, the M11 pipe in shared 61 modules of biasing circuit; Common mode feedback circuit CMFB module detects the output common mode level, and with reference to common mode electrical level V
CMCompare and enlarge, and feed back to control signal, control the load current source in 61 modules and 62 modules.The grid of metal-oxide-semiconductor M10 connects grid and the drain electrode of M11.M8, the grid of M9 pipe connects the output of common-mode feedback CMFB module, is connected to M3 in 61 modules simultaneously, the grid of M4.External reference common mode electrical level V
CM,, determining the output common mode level of amplifier to be similarly V via the feedback effect of common-mode feedback CMFB module
CMTwo frequency compensation resistance R
C+And R
C-Be raceway groove mask resistance, frequency compensation resistance R
C-Be connected grid and the drain electrode of input pipe M6, R
C+Be connected grid and the drain electrode of input pipe M7.The drain electrode of M6 is the reversed-phase output Vout-of load blocks 62 and the output of amplifying stage module 61, i.e. the drain electrode of M2 is connected.The drain electrode of M7 is the in-phase output end Vout+ of load blocks 62 and another output of amplifying stage module 61, i.e. the drain electrode of M1 is connected.The drain electrode of load current source M8 is connected with reversed-phase output Vout-, and the drain electrode of load current source M9 is connected with in-phase output end Vout+.Two frequency compensation resistance R
C+And R
C-Be channel mask resistance, technology realizes simple, and the resistance of resistive element is adjusted through designing when realizing.
Fig. 7 has provided Fig. 5 a resnstance transformer wide-band amplifier of the present invention embodiment circuit and the frequency response oscillogram that does not adopt the wide-band amplifier of resnstance transformer circuit.Adopt the wide-band amplifier circuit of the employing resnstance transformer shown in Fig. 5 a and do not adopt the frequency response oscillogram of the wide-band amplifier circuit of resnstance transformer to obtain through the emulation experiment data, the result is presented on the same frequency response curve.Gain-the frequency response curve that obtains when adding resnstance transformer and not adding electronic compensating is different, and is visible under identical power consumption condition from Fig. 7, adds resnstance transformer, makes the bandwidth of gain stage increase more than 2 times.The introducing of frequency zero makes gain curve tilt upward, and front stage circuits that just can the compensating wide band amplifier and late-class circuit are to the loss of inband flatness; Thereby it is visible; Frequency compensation wide-band amplifier of the present invention can effectively reduce parasitic capacitance, again can the compensating frequency bandwidth, and circuit structure is simple; Adopt CMOS technology to be easy to realize technical scheme, bandwidth can enlarge more than the twice under identical power consumption.The present invention can be applicable to CMOS radio frequency integrated receiver circuit, constitutes intermediate frequency amplifier, realizes the enlarging function to intermediate-freuqncy signal.
Those skilled in the art can make some changes to the foregoing description under the prerequisite that does not deviate from broad scope of the present invention after understanding the present invention's design.Thereby the present invention is not limited in disclosed specific embodiment.Its scope should contain core of the present invention and the interior all changes of protection range that claims limit.
Claims (12)
1. a frequency compensated wide-band amplifier adopts difference input/output circuitry structure, it is characterized in that, the circuit formation of this wide-band amplifier comprises:
One first mutual conductance amplifying unit;
One second transconductance cell, this transconductance cell is feedback connecting circuit structure, it is connected in series with the first mutual conductance amplifying unit;
Two resistance, it embeds and is connected in second transconductance cell, is used for frequency compensation; And
Two electric capacity, its capacitance are equivalent to the capacitive load that late-class circuit is introduced.
2. a kind of frequency compensated wide-band amplifier according to claim 1 is characterized in that, the said first mutual conductance amplifying unit is the circuit structure of difference I/O, and its two differential input ends connect two difference input voltage signals; Two difference output ends of the first mutual conductance amplifying unit are with corresponding one by one being connected in series of two differential feedback ends of second transconductance cell that embeds two frequency compensation resistance, also with two corresponding one by one being connected in parallel of electric capacity that are equivalent to the late-class circuit load; The first mutual conductance amplifying unit is used for the applied signal voltage amplification and converts current signal into.
3. a kind of frequency compensated wide-band amplifier according to claim 1 is characterized in that, said second transconductance cell is feedback connecting circuit structure, and its equivalence is a load circuit; Z as the equivalent load of the first mutual conductance amplifying unit
InExpression formula is:
In the formula: S is the frequency parameter, C
Gm2Be input parasitic capacitance, g
M2Be the transconductance cell transconductance value, R is a compensation resistance values;
The second transconductance cell equivalence during dc state is a resistance, and its resistance is the inverse of this transconductance cell transconductance value, i.e. 1/g
M2
4. a kind of frequency compensated wide-band amplifier according to claim 1; It is characterized in that; Said two frequency compensation resistance are the active resistance element of MOSFET; Or be channel mask resistance, integrated respectively embedding is connected between the input of second transconductance cell output feedback end and second transconductance cell.
5. a kind of frequency compensated wide-band amplifier according to claim 1; It is characterized in that; Said two frequency compensation resistance constitute the capacitance-resistance low-pass filter circuit with the parasitic input capacitance of the second transconductance cell respective input separately; This low-pass filter circuit is used for through the loop negative feedback, for introducing a zero point in the transfer function of wide-band amplifier, makes the frequency scope of wide-band amplifier obtain broadening.
6. a kind of frequency compensated wide-band amplifier according to claim 2; It is characterized in that; The first mutual conductance amplifying unit in the said wide-band amplifier is the amplifying stage module; This amplifying stage module is the fully differential trsanscondutance amplifier structure that has tail current source, saves power consumption, and common-mode signal is played good inhibition effect.
7. a kind of frequency compensated wide-band amplifier according to claim 2; Its characteristic also is; The first mutual conductance amplifying unit in the said wide-band amplifier is the amplifying stage module; This amplifying stage module or be fully differential source class negative feedback structure is used to improve the gain linearity degree of wide-band amplifier, and common-mode signal is played good inhibition effect.
8. a kind of frequency compensated wide-band amplifier according to claim 2; Its characteristic also is; The first mutual conductance amplifying unit in the said wide-band amplifier is the amplifying stage module; This amplifying stage module can or be a pseudo-differential trsanscondutance amplifier structure also, is used to improve the gain linearity degree of wide-band amplifier, and suitable low supply voltage work.
9. a kind of frequency compensated wide-band amplifier according to claim 3; It is characterized in that; Second transconductance cell in the said wide-band amplifier, the circuit structure for the fully differential trsanscondutance amplifier that has tail current source also can adopt and the identical structure of the first mutual conductance amplifying unit.
10. a kind of frequency compensated wide-band amplifier according to claim 3; Its characteristic is that also second transconductance cell in the said wide-band amplifier also can be pseudo-differential transconductance amplifier circuit structure; Be used to improve the gain linearity degree of wide-band amplifier; Avoid the application of common mode feedback circuit, reduce parasitic capacitance, and save power consumption.
11. a kind of frequency compensated wide-band amplifier according to claim 1 is characterized in that, the wide-band amplifier integration module of said first mutual conductance amplifying unit and second transconductance cell that embeds frequency compensation resistance as preferably, adopts CMOS technology to realize.
12. according to the described a kind of frequency compensated wide-band amplifier of claim 1-11; It is characterized in that; Said second transconductance cell is the feedback circuit structure of difference I/O; Insert a frequency compensation resistance respectively between its two difference output ends and the input, these two frequency compensation resistance embed two feedback control loops that are connected to second transconductance cell one by one, constitute the differential feedback circuit structure; The feedback end of the negative output of second transconductance cell connects an end of a frequency compensation resistance, the other end of frequency compensation resistance be connected to second transconductance cell positive input terminal; The feedback end of the positive output of second transconductance cell connects an end of another frequency compensation resistance, and the other end of frequency compensation resistance is connected to the negative input end of second transconductance cell; Corresponding again positive output end and the negative output terminal that is connected to first transconductance cell of the negative output terminal of second transconductance cell and positive output end, two outputs of second transconductance cell electric capacity that is equivalent to load that respectively is connected in parallel.
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