CN102386859B - Wide band amplifier with frequency compensation - Google Patents
Wide band amplifier with frequency compensation Download PDFInfo
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- CN102386859B CN102386859B CN201010268997.0A CN201010268997A CN102386859B CN 102386859 B CN102386859 B CN 102386859B CN 201010268997 A CN201010268997 A CN 201010268997A CN 102386859 B CN102386859 B CN 102386859B
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Abstract
The invention provides a wide band amplifier with frequency compensation, wherein the working frequency range of a circuit of the amplifier can be expanded by means of frequency compensation. The wide band amplifier has a structure of an input/output circuit, wherein the circuit structure comprises a first transconductance amplifying unit, a second transconductance unit equivalent to a load circuit, two frequency compensation resistors embedded to a feedback loop of the second transconductance unit, and two capacitors equivalent to the load introduced by a post-stage circuit. The first transconductance amplifying unit has a structure of an input/output circuit, and is connected in series with the second transconductance unit of the feedback circuit structure. Two frequency compensation resistors are respectively matched with a parasitic input resistor at corresponding input end of the second transconductance unit to form a capacitance-resistance low-pass filter circuit by which a zero point is introduced in a transmission function of the wide band amplifier to expand the frequency working range of the wide band amplifier under the effect of the loop feedback. The wide band amplifier provided by the invention is used as the base amplifier unit applied to a radio frequency simulating front end of a receiver so as to achieve amplifying of an intermediate frequency signal. The wide band amplifier can also be applied to other systems to achieve amplification of a broadband.
Description
Technical field
The invention belongs to twireless radio-frequency communication technical field, relate to wide-band amplifier, relate in particular to a kind of frequency compensated wide-band amplifier, be applied to CMOS radio frequency integrated receiver circuit, for realizing the amplification of intermediate-freuqncy signal.
Background technology
In CMOS radio frequency integrated receiver circuit, radiofrequency signal, after radio frequency amplifies, down-converts to intermediate-freuqncy signal, and the selection of IF-FRE is relevant with system architecture, from several MHz to tens MHz not etc.Intermediate-freuqncy signal after down-conversion, by on-chip active filter, out of band signal is suppressed, automatic gain control circuit (AGC) through rear end further amplifies afterwards, finally delivers to digital to analog converter (ADC) and carries out quantization encoding, for digital base band processor.For reducing the noise effect of active filter, conventionally can add a gain stage circuit in active filter prime.When IF-FRE is higher, need the amplifier circuit in broadband, while adopting conventional structure, can consume more power consumption, and bandwidth is not easy to do very highly yet.Amplifier unit in the automatic gain control circuit of rear class also will be worked under same bandwidth, and the power consumption now consuming will be larger.
Current wide-band amplifier is especially in the amplifier unit design of automatic gain control circuit, for realizing high frequency characteristic, all adopt resistance to do load, this kind of circuit structure can reduce parasitic capacitance, but the output level of wide-band amplifier output is difficult for regulating conventionally, between gain and output level, exists contradiction.Existing document proposes to adopt active pull-up to do load and realizes high frequency characteristic, though can solve the contradiction between gain and output level, the parasitic capacitance that active load is introduced can cause bandwidth to reduce, while being operated in upper frequency, also can increased power dissipation.
The present invention is the wide-band amplifier based on active pull-up load, proposes a kind of frequency compensation technology, can solve the contradiction between gain and output level, neither can cause bandwidth to reduce, under identical power consumption, more than the bandwidth of circuit can expand twice.
Summary of the invention
The object of the invention is to overcome the defect of prior art, thereby propose a kind of wide-band amplifier circuit that has improved operating frequency range by frequency compensation technology, the present invention realizes by following technical scheme.
A frequency compensated wide-band amplifier, adopts difference input/output circuitry structure, and its circuit formation that is this wide-band amplifier comprises:
A first mutual conductance amplifying unit;
Second transconductance cell, this transconductance cell is feedback link circuit structure, it and the first mutual conductance amplifying unit are connected in series;
Two resistance, it embeds and is connected in the second transconductance cell, for frequency compensation; And
Two electric capacity, the capacitive load of introducing for being equivalent to late-class circuit.
A frequency compensated wide-band amplifier, it is that described the first mutual conductance amplifying unit is the circuit structure of difference I/O, its two differential input ends connect two difference input voltage signals; Two difference output ends of the first mutual conductance amplifying unit, with two differential feedback ends that embed two frequency compensation resistance corresponding being connected in series one by one, the electric capacity that is also equivalent to load with two is corresponding being connected in parallel one by one; The first mutual conductance amplifying unit is used for applied signal voltage being amplified and being converted to current signal.
The two-pass DINSAR input of the first mutual conductance amplifying unit difference output end and the second transconductance cell is connected in series, and the first mutual conductance amplifying unit and the second transconductance cell are determining the DC current gain in this amplifier broadband.
A frequency compensated wide-band amplifier, it is that described the second transconductance cell is that feedback link circuit structure adopts feedback link form, equivalence becomes a load circuit; Equivalent load as the first mutual conductance amplifying unit; Equivalent load Z
inexpression formula is
In formula: S is frequency parameter, C
gm2for input parasitic capacitance, g
m2for transconductance cell transconductance value, R is compensation resistance values;
The second transconductance cell during DC state is equivalent to a resistance, and its resistance is the inverse of this transconductance cell transconductance value, i.e. 1/g
m2.
A frequency compensated wide-band amplifier, it is that described two frequency compensation resistance are the active resistance element of MOSFET, or is channel mask resistance, integrated embedding is connected between the second transconductance cell output feedback end and the input of the second transconductance cell respectively.Adopt the frequency compensation of channel mask resistance as an embodiment of technical scheme, adopt the frequency compensation of the active resistance element resistance of MOSFET as another embodiment of technical scheme.
A kind of frequency compensated wide-band amplifier, it is that described two frequency compensation resistance form low-pass filter circuit with the parasitic input capacitance of the second transconductance cell respective input separately, this low-pass filter circuit is through the negative feedback of loop, in the transfer function of wide-band amplifier, introduce a zero point, for making the frequency working range of wide-band amplifier obtain broadening.Can adjust the zero point in this wide-band amplifier transfer function by frequency compensation resistance value.
A kind of frequency compensated wide-band amplifier, its first mutual conductance amplifying unit that is described wide-band amplifier is amplifying stage module, this amplifying stage module is the fully differential trsanscondutance amplifier structure with tail current source, saves power consumption, and common-mode signal is played to good inhibitory action.
A kind of frequency compensated wide-band amplifier, its first mutual conductance amplifying unit that is also described wide-band amplifier is amplifying stage module, this amplifying stage module or be fully differential source degeneration structure, for improving the gain linearity degree of wide-band amplifier, and plays good inhibitory action to common-mode signal.
A kind of frequency compensated wide-band amplifier, its first mutual conductance amplifying unit that is also described wide-band amplifier is amplifying stage module, this amplifying stage module can or be also pseudo-differential trsanscondutance amplifier structure, for improving the gain linearity degree of wide-band amplifier, and applicable low supply voltage work.
A frequency compensated wide-band amplifier, it is the second transconductance cell in described wide-band amplifier, is the circuit structure of the fully differential trsanscondutance amplifier with tail current source, also can adopt the structure identical with the first mutual conductance amplifying unit.
A frequency compensated wide-band amplifier, the second transconductance cell that it is also in described wide-band amplifier, also can be pseudo-differential transconductance amplifier circuit structure, for improving the gain linearity degree of wide-band amplifier, avoid the application of common mode feedback circuit, reduce parasitic capacitance, and save power consumption.
A frequency compensated wide-band amplifier, the wide-band amplifier integration module that it is described the first mutual conductance amplifying unit and embeds the second transconductance cell of frequency compensation resistance, as preferably, adopts CMOS technique to realize.
A kind of frequency compensated wide-band amplifier, it is that described the second transconductance cell is the feedback circuit structure of difference I/O, between its two difference output ends and input, access respectively a frequency compensation resistance, these two frequency compensation resistance embed two feedback control loops that are connected to the second transconductance cell one by one, form differential feedback circuit structure; The feedback end of the negative output of the second transconductance cell connects one end of a frequency compensation resistance, the other end of frequency compensation resistance be connected to the second transconductance cell positive input terminal; The feedback end of the positive output of the second transconductance cell connects one end of another frequency compensation resistance, and the other end of frequency compensation resistance is connected to the negative input end of the second transconductance cell; The negative output terminal of the second transconductance cell and positive output end be corresponding positive output end and the negative output terminal that is connected to the first transconductance cell again, two outputs of the second transconductance cell electric capacity that is equivalent to load that is respectively connected in parallel.
Frequency compensated wide-band amplifier circuit adopts differential input and output structure, comprise two transconductance cell that adopt CMOS technique to realize, one of them mutual conductance is amplifying unit, another is the transconductance cell that unit negative feedback connects, and also comprises the electric capacity of two frequency compensation resistance and two equivalent late-class circuit loads.
The input of the first mutual conductance amplifying unit connects input voltage signal, and its output is connected to the equivalent load resistance consisting of the second transconductance cell and frequency compensation resistance, is also connected to load capacitance.This unit is realized and input voltage is amplified and is converted to the function of electric current, and it is determining the DC current gain of this amplifier together with the second transconductance cell.
The second transconductance cell adopts negative feedback to connect, and frequency compensation resistance is embedded in this feedback control loop simultaneously.The output plus terminal of this unit feeds back, and after frequency compensation resistance, is connected to its input negative terminal; Its output negative terminal feeds back, and after frequency compensation resistance, is connected to its input anode.The output of this unit is connected respectively to again the output of the first transconductance cell, is also connected to load capacitance.The transconductance cell that this negative feedback structure connects equivalence when direct current becomes a resistance, and its resistance is the inverse of the transconductance value of this transconductance cell.
Two frequency compensation resistance are connected between the second transconductance cell output and the input of the second transconductance cell.This frequency compensation resistance with together with the parasitic input capacitance of the second transconductance cell input, is introduced a zero point, thereby the operating frequency range of amplifier is enhanced in the transfer function of whole wide-band amplifier.
Substantial effect of the present invention:
1, the present invention adopts the wide-band amplifier frequency compensation technology of active pull-up load, can effectively increase the operational frequency bandwidth of amplifier, reduces parasitic capacitance, saves power consumption.
2, circuit structure of the present invention is simple, and physical circuit is easy to adopt various structures form to realize.
3, the present invention is based on the wide-band amplifier of active pull-up load, propose a kind of frequency compensation, solve the contradiction between gain and output level, both guaranteed circuit working bandwidth, through simulating, verifying under identical power consumption, more than bandwidth can expand twice.
4, the present invention is applied to CMOS radio frequency integrated receiver circuit, forms intermediate frequency amplifier, realizes the enlarging function to intermediate-freuqncy signal, also can be applicable to, in other system, realize broadband enlarging function.
Accompanying drawing explanation
Fig. 1 is the single-ended connecting circuit figure that prior art adopts active pull-up load amplifier structure.
In Fig. 1,11 is the first mutual conductance amplifying unit, and 12 is the second transconductance cell, C
lfor equivalent load capacitance.
Fig. 2 is the single-ended connecting circuit figure of equivalence that Fig. 1 active pull-up load amplifier is introduced side circuit parasitic antenna.
In Fig. 2, C
0for parasitic capacitance, 1/g
0for dead resistance, C
gs2for parasitic capacitance.
Fig. 3 is the single-ended catenation principle figure of a kind of frequency compensation wide-band amplifier circuit figure of first embodiment of the invention.
In Fig. 3, R
cfor compensating resistance, Z
infor embedding the equiva lent impedance of the second transconductance cell of compensating resistance.
Fig. 4 a is the differential configuration circuit theory diagrams of a kind of frequency compensation wide-band amplifier circuit of Fig. 3 second embodiment of the invention.
In Fig. 4 a, the 41 first mutual conductance amplifying units that are differential configuration, 42 be differential configuration the second transconductance cell, R
c+for the compensating resistance of in-phase input end, R
c-for the compensating resistance of inverting input, C
l+for the equivalent load capacitance of in-phase output end, C
l-equivalent load capacitance for reversed-phase output.
Fig. 4 b is the differential configuration equivalent circuit theory figure that a kind of frequency compensation wide-band amplifier of Fig. 4 a second embodiment of the invention is introduced side circuit parasitic antenna.
In Fig. 4 b, in-phase input end parasitic antenna: C
0+for parasitic capacitance, 1/g
0+for dead resistance, C
gs2+for parasitic capacitance; Inverting input parasitic antenna: C
0-for parasitic capacitance, 1/g
0-for dead resistance, C
gs2-for parasitic capacitance.
Fig. 5 a is a kind of frequency compensation wide-band amplifier difference connecting circuit schematic diagram that second embodiment of the invention frequency compensation resistance is active resistance element.
Fig. 5 b is that second embodiment of the invention frequency compensation resistance is a kind of frequency compensation wide-band amplifier difference connecting circuit schematic diagram of channel mask resistance.
In Fig. 5 a and Fig. 5 b, the 51 first mutual conductance amplifying units that are differential configuration, 52 be differential configuration the second transconductance cell, R
c+and R
c-for compensating resistance.
Fig. 6 is the difference connecting circuit schematic diagram of the circuit structure of frequency compensation wide-band amplifier the 3rd embodiment of the present invention.
The 61 first mutual conductance amplifying units that are differential configuration in figure, 62 be differential configuration the second transconductance cell, R
c+and R
c-for compensating resistance.
Fig. 7 is that Fig. 5 a adopts resnstance transformer embodiment circuit and the wide-band amplifier frequency response oscillogram that does not adopt resnstance transformer circuit.
Embodiment
Below in conjunction with drawings and Examples, technical scheme of the present invention is further described.
Described in background, the classical method that realizes wide-band amplifier is to adopt resistance to do load, but while adopting resistance to do load, output level can not meet the input requirements of late-class circuit conventionally, between output level and gain, has contradiction.The way that solves this contradiction is exactly the structure adopting as shown in Figure 1, adopts active equivalent resistance to do load, for convenience of introducing, has only drawn single-ended type of attachment in figure.In Fig. 1, mutual conductance 11 is as mutual conductance amplifying unit, and transconductance value is g
ml, its input connects input voltage signal, and its output connects the equivalent load resistance being connected and composed by mutual conductance 12 negative feedbacks, also connects load capacitance.This mutual conductance 11 realizes amplifies input voltage be converted to the function of electric current, and it is determining the DC current gain of this amplifier together with the second mutual conductance 12.Mutual conductance 12, transconductance value is g
m2, adopt the equivalence of negative feedback type of attachment to become resistance, its resistance is 1/g
m2.Capacitor C
lfor load capacitance, the load effect of introducing for equivalent late-class circuit.Load resistance adopts active mutual conductance equivalence to realize, and mutual conductance value can be adjusted, and output common mode level easily regulates simultaneously, to meet the requirement of rear class input range, guarantees direct-coupling.Adopt larger mutual conductance just can realize lower load resistance, realize higher limit, i.e. larger bandwidth.
In Fig. 1, the transfer function of amplifier is:
Consider the various ghost effects in side circuit, the equivalent circuit diagram of Fig. 1 as shown in Figure 2, wherein, C
0=C
01+ C
02, g
0=g
01+ g
02.C
0be the parasitic capacitance C that two trsanscondutance amplifiers are introduced at output
01with C
02sum, 1/g
0be the dead resistance 1/g that two trsanscondutance amplifiers are introduced at output
01with 1/g
02sum, C
gs2it is the input parasitic capacitance of the second transconductance cell.
Wherein, C
01with C
02respectively the output parasitic capacitance of mutual conductance 11 and 12, g
01with g
02it is respectively the output admittance of mutual conductance 11 and 12.C
gs2it is the input parasitic capacitance of mutual conductance 12.In Fig. 2, the transfer function of amplifier is:
When the load resistance of amplifier adopts active trsanscondutor equivalent resistance to realize, can consume more power consumption, in the time will realizing larger bandwidth, just need larger power consumption.Larger power consumption just requires larger breadth length ratio, also means and will have larger parasitic capacitance, thereby cause power consumption further to increase.Guaranteeing, under the prerequisite of bandwidth of operation, how to reduce power consumption, be technological difficulties of this circuit.
The present invention, on the basis of Fig. 2, accesses a compensating resistance R in feedback loop
c, in the transfer function of amplifier, introduced a zero point, amplifier gain curve is played to frequency compensated effect, increased bandwidth.As shown in Figure 3, it is exactly frequency compensation resistance R from the different of Fig. 2 to circuit diagram
c, being embedded between the output and input in the feedback control loop of mutual conductance 12, this frequency compensation resistance, with the parasitic input capacitance C of the input of mutual conductance 12
gs2together, in the transfer function of whole wide-band amplifier, introduce bandwidth frequency zero point, reduce the speed that gain declines, improved bandwidth, thereby the frequency working range of amplifier is enhanced.
The equiva lent impedance Z on dotted line the right from Fig. 3
inthe equiva lent impedance of the second transconductance cell of the embedding compensating resistance introduced at the first mutual conductance amplifying unit output, equiva lent impedance Z
inexpression formula is:
In formula, S is frequency parameter, R
cfor compensation resistance values;
In Fig. 3, total transfer function expression formula of wide-band amplifier is:
C=C wherein
o+ C
l.
From expression formula, can calculate the zeros and poles of total transfer function, by regulating element parameter, control the distribution of total transfer function zeros and poles, can be so that the bandwidth of amplifier be increased to more than two times.
What Fig. 3 circuit diagram adopted is single-ended type of attachment, Fig. 4 a and Fig. 4 b have provided the type of attachment of its difference, wherein Fig. 4 a is the circuit diagram while not considering ghost effect element, Fig. 4 b is the circuit diagram while having considered ghost effect element, in figure in element title subscript+and-represent respectively in-phase end and end of oppisite phase.
The electrical schematic diagram of the wide-band amplifier circuit embodiment of the frequency compensation technology that employing the present invention proposes is as shown in Fig. 5 a and Fig. 5 b.
The first embodiment
Fig. 5 a has provided the embodiment of the wide-band amplifier circuit way of realization that a kind of frequency compensation resistance is active resistance element.Wherein the first trsanscondutance amplifier module 51 adopts source degeneration transconductance structure, to improve the linearity, and common-mode signal is played to good inhibitory action.The second mutual conductance module 52 is active load module, adopts pseudo-differential mutual conductance equivalence output resistance structure, improves the linearity of load resistance, makes the input stage of output common mode level and late-class circuit can direct-coupling simultaneously.
In the first trsanscondutance amplifier module 51, by input stage, biasing circuit, tail current source, load current source, formed.Metal-oxide-semiconductor M5, M6 forms tail current source; Metal-oxide-semiconductor M1, M2 forms differential input stage; Metal-oxide-semiconductor M3, M4 forms load current source; Metal-oxide-semiconductor M7, M8, M9 forms biasing circuit, for tail current source capsule and the load current source capsule of trsanscondutance amplifier provides bias voltage.Electric current I
reffor outside reference, for biasing circuit provides bias current.M5 wherein, M6, grid and the drain electrode of the grid of M7 pipe and M9 pipe are connected in parallel.M3, the grid of M4 pipe is connected to grid and the drain electrode of biasing circuit M8 pipe.Difference input pipe M1, the grid of M2, outside input signal Vin-and the Vin+ of corresponding connection.Difference input pipe M1, the drain electrode of M2 and load current source capsule M3, the drain electrode correspondence of M4 is connected in parallel, and is connected to difference output end Vout+ and the Vout-of the second mutual conductance module 52 as the difference output end of the first trsanscondutance amplifier.Resistance R
ffor source degeneration resistance, be used for improving the linear input range of amplifier.
The second mutual conductance module 52 is comprised of input stage, biasing circuit, load current source.Metal-oxide-semiconductor M10, M11 forms input stage; M12, M13 forms load current source; M14, M15 forms biasing circuit, for load current source capsule provides bias voltage.M12, the grid of M13 connects grid and the drain electrode of M14.The outside bias voltage V providing is provided the grid of M15 pipe
cM, being used for as M15 pipe provides biasing, it is determining the output level of this overall amplifier.Two frequency compensation resistance R
c+and R
c-for the active resistance element of MOSFET, frequency compensation resistance R
c-be connected to grid and the drain electrode of input pipe M10, R
c+be connected to grid and the drain electrode of input pipe M11.The drain electrode of M10 is the reversed-phase output Vout-of load blocks 52, and the output of amplifying stage module 51, i.e. the drain electrode of M2 is connected.The drain electrode of M11 is the in-phase output end Vout+ of load blocks 52, and another output of amplifying stage module 51, i.e. the drain electrode of M1 is connected.The resistance of the active resistance element of MOSFET can realize programming adjustment.Second
Embodiment
Fig. 5 b has provided another embodiment that a kind of compensating resistance is the wide-band amplifier circuit way of realization of channel mask resistance.Amplifier circuit way of realization and Fig. 5 a amplifier circuit way of realization are basic identical, two frequency compensation resistance R
c+and R
c-for channel mask resistance, it is simpler that technique realizes, and the resistance of resistive element is adjusted by designing when realizing.
The 3rd embodiment
As shown in Figure 6, Fig. 6 has provided the 3rd embodiment of the wide-band amplifier circuit way of realization that another kind of structure is different to the electrical schematic diagram of another embodiment of the wide-band amplifier circuit of the frequency compensation technology that employing the present invention proposes.Wherein the first trsanscondutance amplifier module 61 adopts the classical fully differential trsanscondutance amplifier structure with tail current source, saves power consumption, and common-mode signal is played to good inhibitory action.The second mutual conductance module 62 is active load module, adopts the fully differential trsanscondutance amplifier structure with tail current source same with the first trsanscondutance amplifier module, is equivalent to the load of output, saves power consumption.When adopting the circuit of this structure, need to adopt common mode feedback circuit (CMFB) to stablize the common mode electrical level of output, make the input stage of output common mode level and late-class circuit can direct-coupling.
In the first trsanscondutance amplifier module 61, by input stage, biasing circuit, tail current source, load current source, formed.Metal-oxide-semiconductor M5 forms tail current source; Metal-oxide-semiconductor M1, M2 forms differential input stage; Metal-oxide-semiconductor M3, M4 forms load current source; Metal-oxide-semiconductor M11 forms biasing circuit, for the tail current source capsule of trsanscondutance amplifier provides bias voltage.Electric current I
reffor outside reference, for biasing circuit provides bias current.Wherein grid and the drain electrode of the grid of M5 pipe and M11 pipe are connected in parallel.M3, the grid of M4 pipe is connected to the output of common-mode feedback in 62 modules (CMFB) module.Difference input pipe M1, the grid of M2, outside input signal Vin-and the Vin+ of corresponding connection.Difference input pipe M1, the drain electrode of M2 and load current source capsule M3, the drain electrode correspondence of M4 is connected in parallel, and is connected to difference output end Vout+ and the Vout-of the second mutual conductance module 62 as the difference output end of the first trsanscondutance amplifier.
The second mutual conductance module 62 is comprised of input stage, biasing circuit, tail current source, load current source.Metal-oxide-semiconductor M6, M7 forms input stage; M8, M9 forms load current source; M10 forms tail current source, and biasing circuit shares the M11 pipe in 61 modules; Common mode feedback circuit CMFB module detects output common mode level, and with reference to common mode electrical level V
cMcompare and enlarge, and feed back to control signal, control the load current source in 61 modules and 62 modules.The grid of metal-oxide-semiconductor M10 connects grid and the drain electrode of M11.M8, the grid of M9 pipe connects the output of common-mode feedback CMFB module, is connected to M3 in 61 modules, the grid of M4 simultaneously.External reference common mode electrical level V
cM, via the feedback effect of common-mode feedback CMFB module, determining that the output common mode level of amplifier is similarly V
cM.Two frequency compensation resistance R
c+and R
c-for raceway groove mask resistance, frequency compensation resistance R
c-be connected to grid and the drain electrode of input pipe M6, R
c+be connected to grid and the drain electrode of input pipe M7.The drain electrode of M6 is the reversed-phase output Vout-of load blocks 62, and the output of amplifying stage module 61, i.e. the drain electrode of M2 is connected.The drain electrode of M7 is the in-phase output end Vout+ of load blocks 62, and another output of amplifying stage module 61, i.e. the drain electrode of M1 is connected.The drain electrode of load current source M8 is connected with reversed-phase output Vout-, and the drain electrode of load current source M9 is connected with in-phase output end Vout+.Two frequency compensation resistance R
c+and R
c-for channel mask resistance, technique realizes simple, and the resistance of resistive element is adjusted by designing when realizing.
Fig. 7 has provided Fig. 5 a resnstance transformer wide-band amplifier of the present invention embodiment circuit and the frequency response oscillogram that does not adopt the wide-band amplifier of resnstance transformer circuit.Adopt the wide-band amplifier circuit of the employing resnstance transformer shown in Fig. 5 a and do not adopt the frequency response oscillogram of the wide-band amplifier circuit of resnstance transformer to obtain by emulation experiment data, result is presented on same frequency response curve.Gain-the frequency response curve obtaining when adding resnstance transformer and not adding electronic compensating is different, under identical power consumption condition, adds resnstance transformer as seen from Figure 7, and the bandwidth of gain stage has been increased more than 2 times.The introducing of frequency zero, gain curve is tilted upward, just front stage circuits and the loss of late-class circuit to inband flatness that can compensating wide band amplifier, thereby visible, frequency compensation wide-band amplifier of the present invention can effectively reduce parasitic capacitance, again can compensating frequency bandwidth, and circuit structure is simple, bandwidth adopt CMOS technique to be easy to realize technical scheme, more than can expand twice under identical power consumption.The present invention can be applicable to CMOS radio frequency integrated receiver circuit, forms intermediate frequency amplifier, realizes the enlarging function to intermediate-freuqncy signal.
Those skilled in the art, after understanding the present invention's design, can, not deviating under the prerequisite of broad scope of the present invention, make some changes to above-described embodiment.Thereby the present invention is not limited in disclosed specific embodiment.Its scope should contain the core of the present invention of claims restriction and all changes in protection range.
Claims (7)
1. a frequency compensated wide-band amplifier, adopts difference input/output circuitry structure, it is characterized in that, the circuit formation of this wide-band amplifier comprises:
A first mutual conductance amplifying unit;
Second transconductance cell, this transconductance cell is feedback link circuit structure, it and the first mutual conductance amplifying unit are connected in series; It is equivalent to a load circuit; Z as the equivalent load of the first mutual conductance amplifying unit
inexpression formula is:
In formula: S is frequency parameter, C
gs2for input parasitic capacitance, g
m2for transconductance cell transconductance value, R is compensation resistance values;
The second transconductance cell during DC state is equivalent to a resistance, and its resistance is the inverse of this transconductance cell transconductance value, i.e. 1/g
m2;
Two resistance, it embeds and is connected in the second transconductance cell, for frequency compensation; Two frequency compensation resistance form capacitance-resistance low-pass filter circuit with the parasitic input capacitance of the second transconductance cell respective input separately, this low-pass filter circuit is for passing through loop negative feedback, in transfer function for wide-band amplifier, introduce a zero point, make the frequency working range of wide-band amplifier obtain broadening; And
Two electric capacity, its capacitance is equivalent to the capacitive load that late-class circuit is introduced.
2. a kind of frequency compensated wide-band amplifier according to claim 1, is characterized in that, described the first mutual conductance amplifying unit is the circuit structure of difference I/O, and its two differential input ends connect two difference input voltage signals; Two difference output ends of the first mutual conductance amplifying unit, with two differential feedback ends corresponding being connected in series one by one that embeds the second transconductance cell of two frequency compensation resistance, the electric capacity that is also equivalent to late-class circuit load with two is corresponding being connected in parallel one by one.
3. a kind of frequency compensated wide-band amplifier according to claim 1, it is characterized in that, described two frequency compensation resistance are the active resistance element of MOSFET, or be channel mask resistance, integrated embedding is connected between the second transconductance cell output feedback end and the input of the second transconductance cell respectively.
4. a kind of frequency compensated wide-band amplifier according to claim 2, it is characterized in that, the first mutual conductance amplifying unit in described wide-band amplifier is amplifying stage module, this amplifying stage module is the fully differential trsanscondutance amplifier structure with tail current source, or be fully differential source degeneration structure, or be pseudo-differential trsanscondutance amplifier structure; Select for saving power consumption and common-mode signal being played to good inhibitory action, or improve the gain linearity degree of wide-band amplifier and common-mode signal is played to good inhibitory action, or improve the gain linearity degree of wide-band amplifier and be applicable to low supply voltage work.
5. a kind of frequency compensated wide-band amplifier according to claim 3, it is characterized in that, the second transconductance cell in described wide-band amplifier, is the circuit structure of the fully differential trsanscondutance amplifier with tail current source, also can adopt the structure identical with the first mutual conductance amplifying unit.
6. a kind of frequency compensated wide-band amplifier according to claim 3, be further characterized in that, the second transconductance cell in described wide-band amplifier, also can be pseudo-differential transconductance amplifier circuit structure, for improving the gain linearity degree of wide-band amplifier, avoid the application of common mode feedback circuit, reduce parasitic capacitance, and save power consumption.
7. according to a kind of frequency compensated wide-band amplifier one of claim 1-6 Suo Shu, it is characterized in that, described the second transconductance cell is the feedback circuit structure of difference I/O, between its two difference output ends and input, access respectively a frequency compensation resistance, these two frequency compensation resistance embed two feedback control loops that are connected to the second transconductance cell one by one, form differential feedback circuit structure; The feedback end of the negative output of the second transconductance cell connects one end of a frequency compensation resistance, the other end of frequency compensation resistance be connected to the second transconductance cell positive input terminal; The feedback end of the positive output of the second transconductance cell connects one end of another frequency compensation resistance, and the other end of frequency compensation resistance is connected to the negative input end of the second transconductance cell; The negative output terminal of the second transconductance cell and positive output end be corresponding positive output end and the negative output terminal that is connected to the first transconductance cell again, two outputs of the second transconductance cell electric capacity that is equivalent to load that is respectively connected in parallel.
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| CN103354419B (en) * | 2013-05-30 | 2016-03-30 | 西安交通大学 | Based on fully integrated compensating network on the sheet of constant transconductance amplifier and capacitor multiflier |
| CN103354443B (en) * | 2013-06-20 | 2016-08-10 | 华侨大学 | It is applied to the continuous time common-mode feedback of high speed Full differential operational amplifier |
| CN104796092B (en) * | 2014-01-22 | 2018-02-13 | 上海华虹集成电路有限责任公司 | Equalizing circuit |
| CN104901644A (en) * | 2014-03-07 | 2015-09-09 | 安凯(广州)微电子技术有限公司 | Gain circuit |
| US10042807B2 (en) * | 2016-04-05 | 2018-08-07 | Infineon Technologies Ag | Differential bus receiver with four-quadrant input circuit |
| CN105958953B (en) * | 2016-04-15 | 2019-05-31 | 二十一世纪（北京）微电子技术有限公司 | A kind of data sink |
| CN106203577B (en) * | 2016-08-23 | 2023-10-20 | 池州睿成微电子有限公司 | Vector adder for carrier leakage elimination system |
| CN108540102B (en) * | 2018-04-23 | 2021-09-10 | 河北工程大学 | Programmable gain amplifier |
| CN109600120B (en) * | 2018-11-22 | 2021-11-02 | 北京航空航天大学 | Ultra-wideband low-noise amplifier adopting mixed frequency compensation network |
| CN113551770B (en) * | 2021-07-23 | 2023-12-29 | 中国科学院半导体研究所 | Terahertz wave amplitude and phase reading device |
| CN116723605B (en) * | 2023-08-10 | 2023-10-31 | 上海芯龙半导体技术股份有限公司 | Compensation circuit of LED power supply and LED power supply |
| CN117081517B (en) * | 2023-10-16 | 2024-01-26 | 韬润半导体(无锡)有限公司 | Operational amplifier and implementation method thereof |
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