CN102376565B - 半导体器件制造方法 - Google Patents
半导体器件制造方法 Download PDFInfo
- Publication number
- CN102376565B CN102376565B CN201110222413.0A CN201110222413A CN102376565B CN 102376565 B CN102376565 B CN 102376565B CN 201110222413 A CN201110222413 A CN 201110222413A CN 102376565 B CN102376565 B CN 102376565B
- Authority
- CN
- China
- Prior art keywords
- polishing
- film
- surface temperature
- cmp
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000005498 polishing Methods 0.000 claims abstract description 408
- 238000000034 method Methods 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 7
- 238000011144 upstream manufacturing Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000003825 pressing Methods 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 131
- 239000010949 copper Substances 0.000 description 97
- 239000002002 slurry Substances 0.000 description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 238000001816 cooling Methods 0.000 description 28
- 239000000428 dust Substances 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229960002163 hydrogen peroxide Drugs 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920002943 EPDM rubber Polymers 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- -1 cut (scratch) Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920003225 polyurethane elastomer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010175692 | 2010-08-04 | ||
JP175692/2010 | 2010-08-04 | ||
JP061559/2011 | 2011-03-18 | ||
JP2011061559A JP5481417B2 (ja) | 2010-08-04 | 2011-03-18 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102376565A CN102376565A (zh) | 2012-03-14 |
CN102376565B true CN102376565B (zh) | 2014-07-30 |
Family
ID=45556484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110222413.0A Active CN102376565B (zh) | 2010-08-04 | 2011-08-04 | 半导体器件制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8575030B2 (zh) |
JP (1) | JP5481417B2 (zh) |
CN (1) | CN102376565B (zh) |
TW (1) | TWI480940B (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013099814A (ja) * | 2011-11-08 | 2013-05-23 | Toshiba Corp | 研磨方法及び研磨装置 |
JP5909157B2 (ja) * | 2012-06-28 | 2016-04-26 | 株式会社東芝 | 半導体装置の製造方法 |
JP2014011408A (ja) * | 2012-07-02 | 2014-01-20 | Toshiba Corp | 半導体装置の製造方法および研磨装置 |
JP6161999B2 (ja) * | 2013-08-27 | 2017-07-12 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
JP2016087770A (ja) | 2014-11-11 | 2016-05-23 | 株式会社東芝 | 研磨布および研磨方法 |
US10667340B2 (en) * | 2015-01-29 | 2020-05-26 | Dsgi Technologies, Inc. | Microwave assisted parallel plate E-field applicator |
JP6791880B2 (ja) * | 2016-01-28 | 2020-11-25 | ディーエスジー テクノロジーズ | マイクロ波を用いた平行板電場の印加装置 |
CN208409547U (zh) * | 2017-10-30 | 2019-01-22 | 凯斯科技股份有限公司 | 基板处理装置 |
TWI825043B (zh) * | 2017-11-14 | 2023-12-11 | 美商應用材料股份有限公司 | 用於化學機械研磨的溫度控制的方法與系統 |
TWI819009B (zh) | 2018-06-27 | 2023-10-21 | 美商應用材料股份有限公司 | 化學機械研磨設備及化學機械研磨方法 |
TWI834195B (zh) | 2019-04-18 | 2024-03-01 | 美商應用材料股份有限公司 | Cmp期間基於溫度的原位邊緣不對稱校正的電腦可讀取儲存媒體 |
TWI754915B (zh) | 2019-04-18 | 2022-02-11 | 美商應用材料股份有限公司 | 用於溫度控制的化學機械拋光溫度掃描設備 |
TW202110575A (zh) | 2019-05-29 | 2021-03-16 | 美商應用材料股份有限公司 | 用於化學機械研磨系統的蒸氣處置站 |
US11633833B2 (en) | 2019-05-29 | 2023-04-25 | Applied Materials, Inc. | Use of steam for pre-heating of CMP components |
US11628478B2 (en) | 2019-05-29 | 2023-04-18 | Applied Materials, Inc. | Steam cleaning of CMP components |
US11897079B2 (en) | 2019-08-13 | 2024-02-13 | Applied Materials, Inc. | Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity |
WO2021041413A1 (en) * | 2019-08-27 | 2021-03-04 | Applied Materials, Inc. | Chemical mechanical polishing correction tool |
US11833637B2 (en) | 2020-06-29 | 2023-12-05 | Applied Materials, Inc. | Control of steam generation for chemical mechanical polishing |
KR20220114087A (ko) | 2020-06-29 | 2022-08-17 | 어플라이드 머티어리얼스, 인코포레이티드 | Cmp에서의 온도 및 슬러리 유량 제어 |
US11577358B2 (en) | 2020-06-30 | 2023-02-14 | Applied Materials, Inc. | Gas entrainment during jetting of fluid for temperature control in chemical mechanical polishing |
JP2023530555A (ja) | 2020-06-30 | 2023-07-19 | アプライド マテリアルズ インコーポレイテッド | Cmp温度制御のための装置および方法 |
KR20220050374A (ko) | 2020-10-16 | 2022-04-25 | 삼성전자주식회사 | 화학적 기계적 연마 장치, 화학적 기계적 연마 방법 및 반도체 장치의 제조 방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1520348A (zh) * | 2001-06-26 | 2004-08-11 | ��ķ�о�����˾ | 用于化学机械抛光的端点检测系统 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4450652A (en) * | 1981-09-04 | 1984-05-29 | Monsanto Company | Temperature control for wafer polishing |
US5957750A (en) * | 1997-12-18 | 1999-09-28 | Micron Technology, Inc. | Method and apparatus for controlling a temperature of a polishing pad used in planarizing substrates |
TW200424299A (en) * | 2002-12-26 | 2004-11-16 | Kao Corp | Polishing composition |
US20070082456A1 (en) * | 2003-11-14 | 2007-04-12 | Nobuo Uotani | Polishing composition and polishing method |
JP4808453B2 (ja) * | 2005-08-26 | 2011-11-02 | 株式会社荏原製作所 | 研磨方法及び研磨装置 |
JP2007095945A (ja) | 2005-09-28 | 2007-04-12 | Fujifilm Corp | 化学的機械的平坦化方法 |
JP2008060460A (ja) | 2006-09-01 | 2008-03-13 | Fujifilm Corp | 金属研磨方法 |
JP2008166448A (ja) | 2006-12-27 | 2008-07-17 | Tokyo Seimitsu Co Ltd | Cmp装置のウェハ温度制御方法及びウェハ温度制御機構 |
JP5261065B2 (ja) * | 2008-08-08 | 2013-08-14 | シャープ株式会社 | 半導体装置の製造方法 |
-
2011
- 2011-03-18 JP JP2011061559A patent/JP5481417B2/ja not_active Expired - Fee Related
- 2011-07-20 TW TW100125688A patent/TWI480940B/zh active
- 2011-08-02 US US13/196,594 patent/US8575030B2/en active Active
- 2011-08-04 CN CN201110222413.0A patent/CN102376565B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1520348A (zh) * | 2001-06-26 | 2004-08-11 | ��ķ�о�����˾ | 用于化学机械抛光的端点检测系统 |
Non-Patent Citations (1)
Title |
---|
JP特开2007-95945A 2007.04.12 |
Also Published As
Publication number | Publication date |
---|---|
US8575030B2 (en) | 2013-11-05 |
US20120034846A1 (en) | 2012-02-09 |
JP5481417B2 (ja) | 2014-04-23 |
TW201209903A (en) | 2012-03-01 |
CN102376565A (zh) | 2012-03-14 |
JP2012054529A (ja) | 2012-03-15 |
TWI480940B (zh) | 2015-04-11 |
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