CN102375343A - Workbench position measuring system - Google Patents

Workbench position measuring system Download PDF

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Publication number
CN102375343A
CN102375343A CN2010102562151A CN201010256215A CN102375343A CN 102375343 A CN102375343 A CN 102375343A CN 2010102562151 A CN2010102562151 A CN 2010102562151A CN 201010256215 A CN201010256215 A CN 201010256215A CN 102375343 A CN102375343 A CN 102375343A
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CN
China
Prior art keywords
read head
group
measuring system
grating chi
wafer
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Pending
Application number
CN2010102562151A
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Chinese (zh)
Inventor
齐芊枫
郑椰琴
吴立伟
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Shanghai Micro Electronics Equipment Co Ltd
Shanghai Micro and High Precision Mechine Engineering Co Ltd
Original Assignee
Shanghai Micro Electronics Equipment Co Ltd
Shanghai Micro and High Precision Mechine Engineering Co Ltd
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Application filed by Shanghai Micro Electronics Equipment Co Ltd, Shanghai Micro and High Precision Mechine Engineering Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to CN2010102562151A priority Critical patent/CN102375343A/en
Publication of CN102375343A publication Critical patent/CN102375343A/en
Pending legal-status Critical Current

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Abstract

The invention provides a workbench position measuring system. The workbench position measuring system comprises a lens, a main base plate, a wafer supporting stage, a marble, one or more grating ruler groups and one or more read head groups corresponding to the one or more grating ruler groups. The lens is fixed on the main base plate. The one or more read head groups form a read head set. The read head set is installed on the main base plate. The one or more grating ruler groups are fixed around the wafer supporting stage. The wafer supporting stage is installed on the marble and moves on the surface of the marble. The one or more read head groups can read motion information through relative motion between the one or more read head groups and the one or more grating ruler groups. Readings of the read head set is collected through the lens so that motion information of the wafer supporting stage on the surface of the marble is obtained. The workbench position measuring system can stably, effectively and accurately measure workbench motion. The workbench position measuring system has a high integrated level, is relatively independent and complete, and is subjected to a small influence from maintenance of other subsystems.

Description

A kind of operating position measuring system
Technical field
The present invention relates to measuring system in the litho machine, especially relate to worktable horizontal direction position measuring system in the litho machine.
Background technology
Common in the market litho machine all adopts interferometer measuring system to carry out the measurement of workbench horizontal level.Measurement range is big, the precision advantages of higher owing to having for interferometer measuring system, is widely used in the position measurement of worktable.But interferometer measuring system is very high to environmental requirement; Need the Correct Determination environmental parameter; Like air pressure, temperature, humidity etc., interferometer is carried out Continuous Compensation, even interferometer temperature and air pressure fluctuation are very little; The variation of these air factors also can finally cause optical maser wavelength to change, and on 500 millimeters measurement length, will cause the change in location of 50 nanometers.Laser changes positive error in time, can cause cosine and Abbe error, therefore must calibrate continuously.Interferometer measuring system requires very high to vibration, the layout of this measuring system is very complicated simultaneously, and is very high to the design and the adjusting requirement of light path.In addition, the interferometer measuring system integrated level is not high, and unexpected certain regulating part of touching causes departing from of light path during easily owing to other subsystem maintenance maintenance.
Summary of the invention
The object of the present invention is to provide the operating position measuring system in a kind of litho machine, be used to solve interferometer measuring system layout complicacy and the not high drawback of integrated level.
The operating position measuring system that the present invention relates to; Comprise: a camera lens, a main substrate, a wafer-supporting platform, a marble, at least one grating chi group and with the corresponding at least one read head group of this grating chi group; Said camera lens is fixed on the said main substrate, and sinks into said main substrate in the end of camera lens near said grating chi group, and camera lens exposes to said main substrate away from an end of said grating chi group; Said read head is combined into a read head collection; Said read head Jian is contained on the main substrate, said grating chi group be fixed on said wafer-supporting platform around, said wafer-supporting platform is installed on the said marble and in said marble surface motion.
Preferably, in described operating position measuring system, said read head group and said grating chi group correspondence are arranged in the quadrilateral layout.
Preferably, in described operating position measuring system, said read head group and said grating chi group correspondence are arranged in the cross layout.
Preferably, in described operating position measuring system, said grating chi group comprises some horizontal grating line and some vertical raster grooves that extend along the Y direction that extend along directions X; Said read head group is made up of three row's read heads, and centre one row's read head of three row's read heads is corresponding with the vertical raster groove of grating chi group, is used to measure the motion on the wafer-supporting platform directions X; Both sides two row's read heads of three row's read heads are corresponding with the horizontal grating line of grating chi group, are used to measure the motion on the wafer-supporting platform Y direction, and the reading result who combines both sides two row's read heads to survey on the Y direction obtains the marmorean relatively anglec of rotation of wafer-supporting platform.
Preferably, in described operating position measuring system, said read head group is a sensor.
Preferably, in described operating position measuring system, said grating chi group comprises some horizontal grating line and some vertical raster grooves that extend along the Y direction that extend along the Y direction; Said read head group 106 only comprises two row's read heads; Wherein row's read head is corresponding with the vertical raster groove of grating chi group; Be used to measure the motion of wafer-supporting platform on directions X, another row's read head is corresponding with the horizontal grating line of grating chi group, is used to measure the motion of wafer-supporting platform on the Y direction.
According to this operating position measuring system, the operating position measuring system that adopts grating chi group and many row's read heads to form, the motion that can stablize effective and high-precision surveying work platform; This operating position measuring system integrated level is higher; Relatively independent and complete, receive the influence of other subsystem maintenance maintenances less, in addition; The structure and layout of this measuring system are simpler than laser interferometer measurement system, and it is also lower that requirement is regulated in design.The monitoring of environmental influence in real time of the method for the measurement wafer-supporting platform movable information of this litho machine makes the location reach nano level precision, and intrinsic repeatable accuracy is higher than the laser interferometer measurement system.
Description of drawings
With reference to advantages after the embodiment of the present invention, will become apparent various aspects of the present invention.Wherein,
Fig. 1 is the structural representation of operating position measuring system in the litho machine;
Fig. 2 is the corresponding plan structure synoptic diagram of read head group and grating chi group; And
Fig. 3 is read head group and grating chi group alignment placement structural representation.
Embodiment
With reference to the accompanying drawings, specific embodiments of the invention is done further to describe in detail.In whole description, identical Reference numeral is represented identical parts.
The operating position measuring system that adopts two-dimensional grating chi and many row's read heads to form; Can stablize the motion of effective and high-precision surveying work platform, operating position measuring system integrated level is higher, and is relatively independent and complete; Receive the influence of other subsystem maintenance maintenances less; In addition, the structure and layout of this measuring system are simpler than laser interferometer measurement system, and it is also lower that requirement is regulated in design.
The monitoring of environmental influence in real time of the method for the measurement wafer-supporting platform movable information of this litho machine makes the location reach nano level precision, and intrinsic repeatable accuracy is higher than the laser interferometer measurement system.
Fig. 1 is the structural representation of operating position measuring system in the litho machine.With reference to Fig. 1, operating position measuring system 100 comprises camera lens 101, main substrate 102, wafer-supporting platform 103, marble 104, at least one grating chi group 105 and at least one read head group 106.Camera lens 101 is fixed on the main substrate 102, and sinks into main substrate 102 in the end of camera lens 101 near this grating chi group 105, and camera lens 101 exposes to main substrate 102 away from an end of this grating chi group 105.This read head group 106 synthetic read head collection, and read head Jian is contained on the main substrate 102, and this read head group 106 is sensors, and corresponding with the position of this grating chi group 105.Wafer-supporting platform 103 is installed on the marble 104 and at marble 104 apparent motions; This grating chi group 105 is fixed on moving with wafer-supporting platform of wafer-supporting platform 103 all around, and read head group 106 is wafer-supporting platform 103 movable informations on marble 104 surfaces with the movable information of grating chi group 105 relative motions.
Wafer-supporting platform 103 is long stroke motion of horizontal direction or precise motion on marble 104, and wafer-supporting platform 103 is along marble 104 rotations.Grating chi group 105 is fixed on moving with wafer-supporting platform 103 of wafer-supporting platform 103 all around; Read head group 106 reads movable information according to the read head group 106 and the relative motion of grating chi group 105; Reading through camera lens 101 collection read head collection obtains the movable information of wafer-supporting platform 103 on marble 104 surfaces.
Fig. 2 is the corresponding plan structure synoptic diagram of read head group and grating chi group.With reference to Fig. 2, this grating chi group 105 comprises some horizontal grating lines 202 and some vertical raster grooves 203 that extend along the Y direction that extend along directions X, and is wherein, indicated among directions X and Y direction such as Fig. 2; Horizontal grating line 202 is corresponding with both sides two row's read heads 2012 of three row's read heads 201; Motion on the Y direction of measurement wafer-supporting platform 103; Vertical raster groove 203 is corresponding with centre one row's read head 2011 of three row's read heads 201, the motion on the directions X of measurement wafer-supporting platform 103.
This read head group 106 is made up of three row's read heads 201, and it is corresponding with the vertical raster groove 203 of grating chi group 105 that read head 2011 is arranged in the centre one of three row's read heads 201, is used to measure the motion on the directions X of wafer-supporting platform 103; Both sides two row's read heads 2012 of three row's read heads 201 are corresponding with the horizontal grating line 202 of grating chi group 105; Be used to measure the motion on the Y direction of wafer-supporting platform 103, and combine both sides two row's read heads 2012 to survey the anglec of rotation that reading result on the Y direction obtains wafer-supporting platform 103 relative marbles 104.
In addition, in another preferred embodiment of the present invention, each grating chi group comprises horizontal grating line and vertical raster groove; Each read head group 106 only comprises two row's read heads; Wherein row's read head is corresponding with the vertical raster groove of grating chi group; Be used to measure the motion of wafer-supporting platform on directions X, another row's read head is corresponding with the horizontal grating line of grating chi group, is used to measure the motion of wafer-supporting platform on the Y direction.
Read head group 106 is corresponding with grating chi group 105, through the reading information that camera lens 101 is gathered the read head collection, obtains the movable information of wafer-supporting platform 103 on marble 104 surfaces.In the present embodiment; First read head 2150, second read head 2160, third reading 2170 belongs to centre one row's read head 2011 of three row's read heads 201; Being used to measure grating chi group 105 also is the directions X motion of wafer-supporting platform 103, and the 4th read head 2271 and the 5th read head 2272, the 6th read head 2281 and the 7th read head 2282 are used to measure the relative rotary motion of read head and grating chi.When grating chi group 105 also is a wafer-supporting platform 103 when the X positive dirction is moved; First read head 2150, the 4th read head 2271 and 2272 work of the 5th read head; This moment, read head need not switch; First read head 2150 can be measured the directions X motion of wafer-supporting platform 103, and the 4th read head 2271 and the 5th read head 2272 can record the relative angle rotation of wafer-supporting platform 103.In like manner, when wafer-supporting platform 103 along Y when negative direction is moved, corresponding Y direction has three read heads to be used to measure position and the rotation of the Y of wafer-supporting platform 103 to motion, Y does not need to switch to read head.And this moment, X can switch to second read head 2160 by first read head 2150 in succession to read head, switches to the 6th read head 2281 and the 7th read head 2282 by the 4th read head 2271 and the 5th read head 2272.
Fig. 3 is read head group and grating chi group alignment placement structural representation.With reference to Fig. 3, read head group 106 is arranged in approximate quadrilateral layout 301 or is arranged in cross layout 302 with grating chi group 105, the stroke of the surveying work platform that the measuring system of approximate quadrilateral layout 301 can be in a big way.Measuring system in quadrilateral layout 301 has two additional vertical raster grooves and two pairs of read heads to carry out the measurement that angle is rotated all the time simultaneously; The angle that can select one of them orientation measurement to obtain is rotated as the main measuring value, and another corresponding measured value is as verification.

Claims (6)

1. operating position measuring system; It is characterized in that; Said operating position measuring system comprises: a camera lens, a main substrate, a wafer-supporting platform, a marble, at least one grating chi group and with the corresponding at least one read head group of this grating chi group; Said camera lens is fixed on the said main substrate, and sinks into said main substrate in the end of camera lens near said grating chi group, and camera lens exposes to said main substrate away from an end of said grating chi group; Said read head is combined into a read head collection; Said read head Jian is contained on the main substrate, said grating chi group be fixed on said wafer-supporting platform around, said wafer-supporting platform is installed on the said marble and in said marble surface motion.
2. operating position measuring system according to claim 1 is characterized in that, said read head group and said grating chi group correspondence are arranged in the quadrilateral layout.
3. operating position measuring system according to claim 1 is characterized in that, said read head group and said grating chi group correspondence are arranged in the cross layout.
4. operating position measuring system according to claim 1 is characterized in that, said grating chi group comprises some horizontal grating line and some vertical raster grooves that extend along the Y direction that extend along directions X; Said read head group is made up of three row's read heads, and centre one row's read head of three row's read heads is corresponding with the vertical raster groove of grating chi group, is used to measure the motion on the wafer-supporting platform directions X; Both sides two row's read heads of three row's read heads are corresponding with the horizontal grating line of grating chi group, are used to measure the motion on the wafer-supporting platform Y direction, and the reading result who combines both sides two row's read heads to survey on the Y direction obtains the marmorean relatively anglec of rotation of wafer-supporting platform.
5. operating position measuring system according to claim 1 is characterized in that, said read head group is a sensor.
6. operating position measuring system according to claim 1 is characterized in that, said grating chi group comprises some horizontal grating line and some vertical raster grooves that extend along the Y direction that extend along directions X; Said read head group 106 only comprises two row's read heads; Wherein row's read head is corresponding with the vertical raster groove of grating chi group; Be used to measure the motion of wafer-supporting platform on directions X, another row's read head is corresponding with the horizontal grating line of grating chi group, is used to measure the motion of wafer-supporting platform on the Y direction.
CN2010102562151A 2010-08-18 2010-08-18 Workbench position measuring system Pending CN102375343A (en)

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Cited By (9)

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Publication number Priority date Publication date Assignee Title
CN102629081A (en) * 2012-04-13 2012-08-08 中国科学院光电技术研究所 FPGA-based control system for workpiece stage of DMD digital maskless photoetching machine
CN104019744A (en) * 2014-06-10 2014-09-03 清华大学 Two-dimension self-calibration gauge point detection alignment system
CN104061864A (en) * 2014-06-30 2014-09-24 清华大学 Plane grating-based system for measuring large-stroke movement of wafer bench
CN106154752A (en) * 2015-03-26 2016-11-23 上海微电子装备有限公司 A kind of measurement apparatus
CN109916315A (en) * 2019-03-29 2019-06-21 华侨大学 A kind of measuring device based on separate type grating
CN111812949A (en) * 2015-09-30 2020-10-23 株式会社尼康 Exposure apparatus, exposure method, and flat panel display manufacturing method
CN112113507A (en) * 2020-09-23 2020-12-22 中国科学院长春光学精密机械与物理研究所 Two-dimensional plane displacement measuring device based on grating projection recognition
CN112234793A (en) * 2020-09-18 2021-01-15 瑞声新能源发展(常州)有限公司科教城分公司 Linear motor
CN112234792A (en) * 2020-09-18 2021-01-15 瑞声新能源发展(常州)有限公司科教城分公司 Linear motor

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CN1677238A (en) * 2005-04-27 2005-10-05 上海微电子装备有限公司 Focusing-levelling detection device
CN101042542A (en) * 2006-03-21 2007-09-26 Asml荷兰有限公司 Displacement measurement systems lithographic apparatus and device manufacturing method

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JPH0843044A (en) * 1994-07-26 1996-02-16 Tokai Rika Co Ltd Measuring apparatus for three dimensional coordinate
CN2411464Y (en) * 2000-04-04 2000-12-20 时代集团公司 Micro-displacement measuring device
JP2005079274A (en) * 2003-08-29 2005-03-24 Matsushita Electric Ind Co Ltd Pattern defect inspection method and apparatus thereof
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102629081A (en) * 2012-04-13 2012-08-08 中国科学院光电技术研究所 FPGA-based control system for workpiece stage of DMD digital maskless photoetching machine
CN104019744A (en) * 2014-06-10 2014-09-03 清华大学 Two-dimension self-calibration gauge point detection alignment system
CN104061864A (en) * 2014-06-30 2014-09-24 清华大学 Plane grating-based system for measuring large-stroke movement of wafer bench
WO2016000496A1 (en) * 2014-06-30 2016-01-07 清华大学 Plane grating-based system for measuring large-stroke movement of wafer bench
CN106154752A (en) * 2015-03-26 2016-11-23 上海微电子装备有限公司 A kind of measurement apparatus
CN111812949A (en) * 2015-09-30 2020-10-23 株式会社尼康 Exposure apparatus, exposure method, and flat panel display manufacturing method
CN109916315A (en) * 2019-03-29 2019-06-21 华侨大学 A kind of measuring device based on separate type grating
CN109916315B (en) * 2019-03-29 2024-02-23 华侨大学 Measuring device based on separation type grating
CN112234793A (en) * 2020-09-18 2021-01-15 瑞声新能源发展(常州)有限公司科教城分公司 Linear motor
CN112234792A (en) * 2020-09-18 2021-01-15 瑞声新能源发展(常州)有限公司科教城分公司 Linear motor
CN112113507A (en) * 2020-09-23 2020-12-22 中国科学院长春光学精密机械与物理研究所 Two-dimensional plane displacement measuring device based on grating projection recognition
CN112113507B (en) * 2020-09-23 2021-10-22 中国科学院长春光学精密机械与物理研究所 Two-dimensional plane displacement measuring device based on grating projection recognition

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Application publication date: 20120314