CN102361030B - 一次性可编程存储单元阵列及其制造方法 - Google Patents
一次性可编程存储单元阵列及其制造方法 Download PDFInfo
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CN102361030B true CN102361030B (zh) | 2013-12-04 |
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CN1082723C (zh) * | 1997-06-06 | 2002-04-10 | 联华电子股份有限公司 | 只读存储器结构及其制造方法 |
CN1466223A (zh) * | 2002-07-02 | 2004-01-07 | 联华电子股份有限公司 | 可抹除可编程只读存储器的结构 |
CN100353555C (zh) * | 2003-11-24 | 2007-12-05 | 联华电子股份有限公司 | 存储装置及其制造方法 |
CN100561740C (zh) * | 2006-06-12 | 2009-11-18 | 中芯国际集成电路制造(上海)有限公司 | 半导体存储器件及其制造方法 |
KR100760926B1 (ko) * | 2006-10-11 | 2007-09-21 | 동부일렉트로닉스 주식회사 | 다중 비트셀을 구현하는 비휘발성 반도체 메모리 장치 및그 제조방법 |
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Effective date of registration: 20191223 Address after: 510700 room 302-15, floor 3, building B10, No.11 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: Guangchuangsin (Guangzhou) Technology Co., Ltd Address before: 410100 No. 31, No. 2, Changsha economic and Technological Development Zone, Hunan, China Patentee before: Changsha Alphavor Electronic Technology Co., Ltd. |
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Effective date of registration: 20220507 Address after: 519000 Room 305, building 3, No. 101, University (Road), Xiangzhou District, Zhuhai City, Guangdong Province Patentee after: Zhuhai Chuangfeixin Technology Co.,Ltd. Address before: 510700 302-15, floor 3, building B10, No. 11, Kaiyuan Avenue, Huangpu District, Guangzhou, Guangdong Patentee before: Guangchuangsin (Guangzhou) Technology Co.,Ltd. |