CN102356450A - 具有高温可旋转靶的沉积设备及该设备的操作方法 - Google Patents
具有高温可旋转靶的沉积设备及该设备的操作方法 Download PDFInfo
- Publication number
- CN102356450A CN102356450A CN2010800135583A CN201080013558A CN102356450A CN 102356450 A CN102356450 A CN 102356450A CN 2010800135583 A CN2010800135583 A CN 2010800135583A CN 201080013558 A CN201080013558 A CN 201080013558A CN 102356450 A CN102356450 A CN 102356450A
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- Pending
Links
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3421—Cathode assembly for sputtering apparatus, e.g. Target using heated targets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/408,409 US20100236920A1 (en) | 2009-03-20 | 2009-03-20 | Deposition apparatus with high temperature rotatable target and method of operating thereof |
| US12/408,409 | 2009-03-20 | ||
| EP09155752.0 | 2009-03-20 | ||
| EP09155752A EP2230325A1 (fr) | 2009-03-20 | 2009-03-20 | Appareil de dépôt d'une cathode rotative haute température et son procédé de fonctionnement |
| PCT/IB2010/000598 WO2010106432A2 (fr) | 2009-03-20 | 2010-03-19 | Appareil de dépôt avec cible tournante à haute température et procédé de fonctionnement associé |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102356450A true CN102356450A (zh) | 2012-02-15 |
Family
ID=42740059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800135583A Pending CN102356450A (zh) | 2009-03-20 | 2010-03-19 | 具有高温可旋转靶的沉积设备及该设备的操作方法 |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20110137331A (fr) |
| CN (1) | CN102356450A (fr) |
| TW (1) | TW201043715A (fr) |
| WO (1) | WO2010106432A2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104160471A (zh) * | 2012-03-12 | 2014-11-19 | 应用材料公司 | 用于溅射沉积的微型可旋转式溅射装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108097530B (zh) * | 2018-01-19 | 2023-12-29 | 广西晶联光电材料有限责任公司 | 一种平面靶材背面金属化设备及方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5441623A (en) * | 1994-01-03 | 1995-08-15 | Industrial Technology Research Institute | Sputtering apparatus for making high temperature superconducting oxide films |
| US5645699A (en) * | 1994-09-06 | 1997-07-08 | The Boc Group, Inc. | Dual cylindrical target magnetron with multiple anodes |
| US20020046943A1 (en) * | 2000-10-23 | 2002-04-25 | Hiroshi Echizen | Sputtering method for forming film and apparatus therefor |
| US20080258411A1 (en) * | 2006-11-30 | 2008-10-23 | Canon Anelva Corporation | Power supply apparatus and deposition method using the power supply apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060065524A1 (en) * | 2004-09-30 | 2006-03-30 | Richard Newcomb | Non-bonded rotatable targets for sputtering |
| TWI317763B (en) * | 2005-10-03 | 2009-12-01 | Thermal Conductive Bonding Inc | Very long cylindrical sputtering target and method for manufacturing |
-
2010
- 2010-03-19 WO PCT/IB2010/000598 patent/WO2010106432A2/fr active Application Filing
- 2010-03-19 CN CN2010800135583A patent/CN102356450A/zh active Pending
- 2010-03-19 KR KR1020117022889A patent/KR20110137331A/ko not_active Application Discontinuation
- 2010-03-22 TW TW099108392A patent/TW201043715A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5441623A (en) * | 1994-01-03 | 1995-08-15 | Industrial Technology Research Institute | Sputtering apparatus for making high temperature superconducting oxide films |
| US5645699A (en) * | 1994-09-06 | 1997-07-08 | The Boc Group, Inc. | Dual cylindrical target magnetron with multiple anodes |
| US20020046943A1 (en) * | 2000-10-23 | 2002-04-25 | Hiroshi Echizen | Sputtering method for forming film and apparatus therefor |
| US20080258411A1 (en) * | 2006-11-30 | 2008-10-23 | Canon Anelva Corporation | Power supply apparatus and deposition method using the power supply apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104160471A (zh) * | 2012-03-12 | 2014-11-19 | 应用材料公司 | 用于溅射沉积的微型可旋转式溅射装置 |
| CN104160471B (zh) * | 2012-03-12 | 2017-11-28 | 应用材料公司 | 用于溅射沉积的微型可旋转式溅射装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010106432A3 (fr) | 2011-02-24 |
| KR20110137331A (ko) | 2011-12-22 |
| TW201043715A (en) | 2010-12-16 |
| WO2010106432A2 (fr) | 2010-09-23 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120215 |