CN110835736A - 一种9腔体立式pecvd-pvd一体化硅片镀膜工艺 - Google Patents
一种9腔体立式pecvd-pvd一体化硅片镀膜工艺 Download PDFInfo
- Publication number
- CN110835736A CN110835736A CN201810943421.6A CN201810943421A CN110835736A CN 110835736 A CN110835736 A CN 110835736A CN 201810943421 A CN201810943421 A CN 201810943421A CN 110835736 A CN110835736 A CN 110835736A
- Authority
- CN
- China
- Prior art keywords
- cavity
- film deposition
- amorphous silicon
- pecvd
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 238000000576 coating method Methods 0.000 title claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 73
- 230000008021 deposition Effects 0.000 claims abstract description 65
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 49
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 48
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 38
- 230000007704 transition Effects 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 10
- 238000005477 sputtering target Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000000427 thin-film deposition Methods 0.000 claims description 10
- 238000005086 pumping Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000012495 reaction gas Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 239000007888 film coating Substances 0.000 claims description 3
- 238000009501 film coating Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000007599 discharging Methods 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000000498 cooling water Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/046—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material with at least one amorphous inorganic material layer, e.g. DLC, a-C:H, a-C:Me, the layer being doped or not
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及一种9腔体立式PECVD‑PVD一体化硅片镀膜工艺,上料腔体、预加热腔体、本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体、过渡腔体、第一、二、三TCO薄膜沉积PVD腔体和下料腔体通过真空锁依次连接且头尾设置真空锁,一移动装置由前至后穿接各腔体和真空锁,上料腔体内设立式载板,立式载板设置于移动装置上呈在本一体化设备中由前至后可移动状态,第二TCO薄膜沉积PVD腔体内设溅射靶,上述各个腔体外接超纯气路、加热系、抽真空系统。能有效避免产品制备过程工序暴露于空气,提升晶体硅异质结太阳电池的性能,降低其生产成本。
Description
技术领域
本发明涉及高效晶体硅太阳电池制造领域,特别是一种用于太阳电池制造的9腔体立式PECVD-PVD一体化硅片镀膜工艺。
背景技术
目前,一类先进高效的晶体硅太阳电池是基于非晶硅/晶体硅异质结结构。其生产技术中非常关键的两个步骤是非晶硅基薄膜的沉积(包括本征层和掺杂层,材质为非晶硅、微晶硅、纳米硅、掺氧非晶硅等)以及透明导电氧化物TCO层的沉积。比较常用的非晶硅基薄膜的沉积方法是低温化学气相沉积法,包括等离子体化学气相沉积(PECVD)和热丝化学气相沉积(HWCVD)两种;而TCO层的制备一般采用PVD法(磁控溅射法最常用)。在生产中,这两种技术所对应的设备通常是分开来的。即低温CVD设备是一套独立的系统,通常包括上料及预加热腔体、本征层沉积腔、掺杂沉积腔(p型或n型)以及下料腔体等几部分;而PVD设备也要包括上料腔、预加热腔、薄膜沉积腔以及下料腔体等。CVD与PVD系统之间还需要硅片的上料和下料装置以及硅片在不同设备间传递的传送装置等。整体体系非常复杂。而且因为在CVD与PVD系统之间传递过程中产品必须暴露于空气中,导致产品的表面受空气中水蒸气、氧气、灰尘等影响造成性能下降;生产中运营费用高,需要的工人数量也较多。
发明内容
本发明所解决的技术问题是提供一种能有效避免产品制备过程中本征和掺杂硅基薄膜以及TCO膜层工序暴露于空气,提升晶体硅异质结太阳电池的性能,降低其生产成本的用于太阳电池制造的9腔体立式PECVD-PVD一体化硅片镀膜工艺。
本发明所采用的技术方案是:包括上料腔体、预加热腔体、本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体、过渡腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体和下料腔体,上述各腔体之间通过真空锁依次连接,上料腔体进料口和下料腔体出料口同样设置真空锁,一移动装置由前至后穿接各腔体和真空锁,本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体均为立式结构,上料腔体内设立式载板,立式载板设置于移动装置上呈在本一体化设备中由前至后可移动状态,第二TCO薄膜沉积PVD腔体内设溅射靶,过渡腔体外接加热系统和/或冷却水系统和/或抽真空系统,下料腔体外接氮气系统和/或抽真空系统。
所述移动装置为推料进给轨道或移动轨道或移动挂架。
上述各个腔体外接超纯气路系统和/或加热系统和/或冷却水系统和/或抽真空系统。
一种9腔体立式PECVD-PVD一体化硅片镀膜工艺,采用立式结构的本征非晶硅薄膜沉积PECVD腔体、掺杂非晶硅薄膜沉积PECVD腔体,以及立式结构的三TCO薄膜沉积PVD腔体,将这两种薄膜沉积装备集成,各腔体之间采用真空锁结构连接,产品在设备各腔体之间通过移动装置传递时不暴露大气。
该设备在使用时,各个腔体在硅片未进入前均由其外接真空系统保持真空状态。将需进行镀膜的硅片固定到垂直放置的载板上;上料腔体破真空,打开进料端真空锁,载板由移动装置送入上料腔体中,然后关闭真空锁抽真空,打开上料腔体和加热腔体间的真空锁,载板送入热加热腔体并关闭真空锁抽真空进行预加热,预加热可由腔体内或外接加热系统完成,达到预定的真空度和温度后,打开预加热腔体、本征非晶硅薄膜沉积PECVD腔体之间的真空锁;将载板送入本征非晶硅薄膜沉积PECVD腔体中关闭真空锁;在本征非晶硅薄膜沉积PECVD腔体中进行本征非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开本征非晶硅薄膜沉积PECVD腔体掺杂非晶硅薄膜沉积PECVD腔体之间的真空锁,将载板送入到掺杂非晶硅薄膜沉积PECVD腔体中关闭真空锁;在掺杂非晶硅薄膜沉积PECVD腔体中进行掺杂非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开该腔室后的真空锁,将载板送入到过渡腔体中,通过在过渡腔体内抽真空过渡、加热过渡、冷却过渡调整载板温度,起到了TCO沉积前的预加热以及调节PECVD部分和TCO沉积部分的作用;再打开其后真空锁送入第一TCO薄膜沉积PVD腔体中关闭真空锁,第一、二、三TCO薄膜沉积PVD腔体之间的真空锁在正常工作情况下保持打开状态,溅射靶安装在第二TCO薄膜沉积PVD腔体中,载板匀速的依次通三个腔体,完成TCO的镀膜过程;然后打开第三TCO薄膜沉积PVD腔体后的真空锁,载板被送入下料腔体后关闭真空锁;在下料腔体中用氮气或洁净空气破真空,然后打开下料腔体出料端的真空锁,将载板移出;关闭真空锁,对下料腔体抽真空。如此,则完成非晶硅/晶体硅异质结太阳电池用硅片的一个表面的本征非晶硅、重掺杂非晶硅和TCO的镀膜工作。
本发明的有益效果是:非晶硅/晶体硅异质结太阳电池制造过程中在硅片的一个表面上沉积的本征非晶硅、掺杂非晶硅和TCO薄膜沉积全过程不暴露空气,减少了大气对硅片薄膜的氧化和空气中水蒸气、灰尘等对各结构表面的污染,从而提高了产品的性能。将PECVD与PVD进行一体化设计,通过移动装置由前至后依次传送,省却了PECVD设备的下料腔和PVD的上料腔,以及两台设备之间的传递装置和下上料装置,大大减少设备的复杂性,缩短了工序和工时,降低产线装备购买和运营的费用;减少了工序,从而减少了产品的搬运和与载盘之间对硅片的物理冲击,从而减少了产品的破片率,进一步降低了成本。
附图说明
图1为本发明的主视图。
其中:上料腔体1;预加热腔体2;本征非晶硅薄膜沉积PECVD腔体3;掺杂非晶硅薄膜沉积PECVD腔体4;过渡腔体5;第一TCO薄膜沉积的PVD腔体6;第二TCO薄膜沉积的PVD腔体7;第三TCO薄膜沉积的PVD腔体8;下料腔体9;载板10;移动轨道11;真空锁12;氮气系统13;抽真空系统14;加热系统15。
具体实施方式
下面结合具体实施例,进一步阐述本专利。应理解,这些实施例仅用于说明本专利而不用于限制本专利的范围。此外应理解,在阅读了本专利讲授的内容之后,本领域技术人员可以对本专利作各种改动或修改,这些等价形式同样落于本申请所附权利要求书所限定的范围。
图1所示:一种用于太阳电池制造的9腔体立式PECVD-PVD一体化设备包括上料腔体1、预加热腔体2、本征非晶硅薄膜沉积PECVD腔体3、掺杂非晶硅薄膜沉积PECVD腔体4、过渡腔体5、第一TCO薄膜沉积的PVD腔体6、第二TCO薄膜沉积的PVD腔体7、第三TCO薄膜沉积的PVD腔体8、下料腔体9、载板10、移动轨道11、真空锁12、氮气系统13、抽真空系统14、加热系统15。上述各PECVD、PVD腔体均为立式,上料腔体1、预加热腔体2、本征非晶硅薄膜沉积PECVD腔体3、掺杂非晶硅薄膜沉积PECVD腔体4、过渡腔体5、第一TCO薄膜沉积的PVD腔体6、第二TCO薄膜沉积的PVD腔体7、第三TCO薄膜沉积的PVD腔体8、下料腔体9由前至后依次连接且两两间经真空锁12连接,上料腔体1进料端和下料腔体9出料端也设置真空锁,上料腔体1内设垂直的载板10,本一体化设备内设置有由前至后依次上料进给载板在各腔体内移动的移动轨道11,下料腔体9接氮气系统14供氮气破真空、接抽真空系统14抽真空,过渡腔体5接加热系统15供热、接真空系统14抽真空。
在本实施例中上料腔体、预加热腔体、各个PECVD、各个PVD腔体外接超纯气路系统和/或加热系统和/或冷却水系统和/或抽真空系统,依据现场生产综合选择;过渡腔体5接的加热系统15同样具备降温调整的加热功效,用于满足温度调整的不同需求。
Claims (1)
1.一种9腔体立式PECVD-PVD一体化硅片镀膜工艺,其特征在于:采用立式结构的本征非晶硅薄膜沉积PECVD腔体、立式结构掺杂非晶硅薄膜沉积PECVD腔体,以及三个立式结构的TCO薄膜沉积PVD腔体,将上述薄膜沉积腔体集成,各腔体之间采用真空锁结构连接,各个腔体在硅片未进入前均由其外接真空系统保持真空状态,将需进行镀膜的硅片固定到垂直放置的载板上;上料腔体破真空,打开进料端真空锁,载板由移动装置送入上料腔体中,然后关闭真空锁抽真空,打开上料腔体和加热腔体间的真空锁,载板送入热加热腔体并关闭真空锁抽真空进行预加热,预加热可由腔体内或外接加热系统完成,达到预定的真空度和温度后,打开预加热腔体、本征非晶硅薄膜沉积PECVD腔体之间的真空锁;将载板送入本征非晶硅薄膜沉积PECVD腔体中关闭真空锁;在本征非晶硅薄膜沉积PECVD腔体中进行本征非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开本征非晶硅薄膜沉积PECVD腔体掺杂非晶硅薄膜沉积PECVD腔体之间的真空锁,将载板送入到掺杂非晶硅薄膜沉积PECVD腔体中关闭真空锁;在掺杂非晶硅薄膜沉积PECVD腔体中进行掺杂非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开该腔室后的真空锁,将载板送入到过渡腔体中,通过在过渡腔体内抽真空过渡、加热过渡、冷却过渡调整载板温度,起到了TCO沉积前的预加热以及调节PECVD部分和TCO沉积部分的作用;再打开其后真空锁送入第一TCO薄膜沉积PVD腔体中关闭真空锁,第一、二、三TCO薄膜沉积PVD腔体之间的真空锁在正常工作情况下保持打开状态,溅射靶安装在第二TCO薄膜沉积PVD腔体中,载板匀速的依次通三个腔体,完成TCO的镀膜过程;然后打开第三TCO薄膜沉积PVD腔体后的真空锁,载板被送入下料腔体后关闭真空锁;在下料腔体中用氮气或洁净空气破真空,然后打开下料腔体出料端的真空锁,将载板移出;关闭真空锁,对下料腔体抽真空,完成非晶硅/晶体硅异质结太阳电池用硅片的一个表面的本征非晶硅、重掺杂非晶硅和TCO的镀膜工作。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810943421.6A CN110835736A (zh) | 2018-08-17 | 2018-08-17 | 一种9腔体立式pecvd-pvd一体化硅片镀膜工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810943421.6A CN110835736A (zh) | 2018-08-17 | 2018-08-17 | 一种9腔体立式pecvd-pvd一体化硅片镀膜工艺 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110835736A true CN110835736A (zh) | 2020-02-25 |
Family
ID=69574351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810943421.6A Pending CN110835736A (zh) | 2018-08-17 | 2018-08-17 | 一种9腔体立式pecvd-pvd一体化硅片镀膜工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110835736A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111485229A (zh) * | 2020-05-28 | 2020-08-04 | 深圳市捷佳伟创新能源装备股份有限公司 | 电池片镀膜设备和电池片镀膜方法 |
WO2022027994A1 (zh) | 2020-08-03 | 2022-02-10 | 苏州迈正科技有限公司 | 镀膜设备、方法、系统及太阳能电池、组件、发电系统 |
CN114318271A (zh) * | 2022-01-27 | 2022-04-12 | 昆山晟成光电科技有限公司 | 一种集成rpd和pvd的镀膜设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102751372A (zh) * | 2012-07-04 | 2012-10-24 | 圣睿太阳能科技(镇江)有限公司 | 具有NIP隧穿结的a-Si/μc-SiGe叠层太阳能电池及其制造方法 |
CN202626293U (zh) * | 2012-06-25 | 2012-12-26 | 吉富新能源科技(上海)有限公司 | 一种用于异质结太阳能电池薄膜沉积系统 |
CN203834012U (zh) * | 2014-04-03 | 2014-09-17 | 蒋绍洪 | 类钻石薄膜连续型镀膜装置 |
-
2018
- 2018-08-17 CN CN201810943421.6A patent/CN110835736A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202626293U (zh) * | 2012-06-25 | 2012-12-26 | 吉富新能源科技(上海)有限公司 | 一种用于异质结太阳能电池薄膜沉积系统 |
CN102751372A (zh) * | 2012-07-04 | 2012-10-24 | 圣睿太阳能科技(镇江)有限公司 | 具有NIP隧穿结的a-Si/μc-SiGe叠层太阳能电池及其制造方法 |
CN203834012U (zh) * | 2014-04-03 | 2014-09-17 | 蒋绍洪 | 类钻石薄膜连续型镀膜装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111485229A (zh) * | 2020-05-28 | 2020-08-04 | 深圳市捷佳伟创新能源装备股份有限公司 | 电池片镀膜设备和电池片镀膜方法 |
WO2022027994A1 (zh) | 2020-08-03 | 2022-02-10 | 苏州迈正科技有限公司 | 镀膜设备、方法、系统及太阳能电池、组件、发电系统 |
CN114318271A (zh) * | 2022-01-27 | 2022-04-12 | 昆山晟成光电科技有限公司 | 一种集成rpd和pvd的镀膜设备 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110835736A (zh) | 一种9腔体立式pecvd-pvd一体化硅片镀膜工艺 | |
US20230307568A1 (en) | Coating apparatus, method and system, solar cell, module, and power generation system | |
JP2002064215A (ja) | 光起電力モジュールの大量製造装置および方法 | |
US20160359071A1 (en) | System, method and apparatus for chemical vapor deposition | |
CN110835744A (zh) | 一种9腔体卧式pecvd-pvd一体化硅片镀膜工艺 | |
CN110835739A (zh) | 7腔体立式pecvd-pvd一体化硅片镀膜工艺 | |
US8430963B2 (en) | Cool-down system and method for a vapor deposition system | |
CN102569512A (zh) | 基于碲化镉的光伏模块的制造中的薄膜层的一体化淀积 | |
CN110835732A (zh) | 一种9腔体卧式hwcvd-pvd一体化硅片镀膜工艺 | |
CN110835731A (zh) | 一种8腔体立式pecvd-pvd一体化硅片镀膜工艺 | |
CN110835735A (zh) | 一种8腔体卧式hwcvd-pvd一体化硅片镀膜工艺 | |
CN110835734A (zh) | 一种8腔体卧式pecvd-pvd一体化硅片镀膜工艺 | |
CN110835730A (zh) | 7腔体立式hwcvd-pvd一体化硅片镀膜生产工艺 | |
CN110835726A (zh) | 用于太阳电池制造的8腔体立式hwcvd-pvd一体化设备 | |
KR101044772B1 (ko) | 대면적 하향식 cigs 고속성막공정 시스템 및 방법 | |
CN110835725A (zh) | 用于太阳电池制造的7腔体卧式hwcvd-pvd一体化设备 | |
CN110735125A (zh) | 用于制造异质结太阳能电池的pecvd设备及镀膜方法 | |
CN107623052B (zh) | 一种太阳能电池片钝化用Al2O3镀膜系统和方法 | |
CN110835733A (zh) | 一种9腔体立式hwcvd-pvd一体化硅片镀膜工艺 | |
CN110835729A (zh) | 用于太阳电池制造的9腔体卧式hwcvd-pvd一体化设备 | |
CN113328011A (zh) | 一种钝化接触晶硅太阳电池制造装置及方法 | |
CN110835728A (zh) | 用于太阳电池制造的9腔体卧式pecvd-pvd一体化设备 | |
CN110835727A (zh) | 用于太阳电池制造的8腔体卧式pecvd-pvd一体化设备 | |
CN110835743A (zh) | 用于太阳电池制造的9腔体立式hwcvd-pvd一体化设备 | |
CN110838531A (zh) | 用于太阳电池制造的8腔体立式pecvd-pvd一体化设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200225 |
|
WD01 | Invention patent application deemed withdrawn after publication |