CN110835726A - 用于太阳电池制造的8腔体立式hwcvd-pvd一体化设备 - Google Patents

用于太阳电池制造的8腔体立式hwcvd-pvd一体化设备 Download PDF

Info

Publication number
CN110835726A
CN110835726A CN201810938149.2A CN201810938149A CN110835726A CN 110835726 A CN110835726 A CN 110835726A CN 201810938149 A CN201810938149 A CN 201810938149A CN 110835726 A CN110835726 A CN 110835726A
Authority
CN
China
Prior art keywords
cavity
film deposition
pvd
hwcvd
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810938149.2A
Other languages
English (en)
Inventor
黄海宾
黄振
周浪
彭德香
任栋樑
刘超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Wisdom (taixing) Power Technology Co Ltd
Original Assignee
China Wisdom (taixing) Power Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Wisdom (taixing) Power Technology Co Ltd filed Critical China Wisdom (taixing) Power Technology Co Ltd
Priority to CN201810938149.2A priority Critical patent/CN110835726A/zh
Publication of CN110835726A publication Critical patent/CN110835726A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

本发明涉及一种用于太阳电池制造的8腔体立式HWCVD‑PVD一体化设备,上料腔体、预加热腔体、本征非晶硅薄膜沉积HWCVD腔体、掺杂非晶硅薄膜沉积HWCVD腔体、第一、二、三TCO薄膜沉积PVD腔体和下料腔体通过真空锁依次连接且头尾设置真空锁,一移动装置由前至后穿接各腔体和真空锁,上料腔体内设立式载板,立式载板设置于移动装置上呈在本一体化设备中由前至后可移动状态,第二TCO薄膜沉积PVD腔体内设溅射靶,上述各个腔体外接超纯气路、加热系、抽真空系统。能有效避免产品制备过程工序暴露于空气,提升晶体硅异质结太阳电池的性能,降低其生产成本。

Description

用于太阳电池制造的8腔体立式HWCVD-PVD一体化设备
技术领域
本发明涉及高效晶体硅太阳电池制造领域,特别是一种用于太阳电池制造的8腔体立式HWCVD-PVD一体化设备。
背景技术
目前,一类先进高效的晶体硅太阳电池是基于非晶硅/晶体硅异质结结构。其生产技术中非常关键的两个步骤是非晶硅基薄膜的沉积(包括本征层和掺杂层,材质为非晶硅、微晶硅、纳米硅、掺氧非晶硅等)以及透明导电氧化物TCO层的沉积。比较常用的非晶硅基薄膜的沉积方法是低温化学气相沉积法,包括等离子体化学气相沉积(PECVD)和热丝化学气相沉积(HWCVD)两种;而TCO层的制备一般采用PVD法(磁控溅射法最常用)。在生产中,这两种技术所对应的设备通常是分开来的。即低温CVD设备是一套独立的系统,通常包括上料及预加热腔体、本征层沉积腔、掺杂沉积腔(p型或n型)以及下料腔体等几部分;而PVD设备也要包括上料腔、预加热腔、薄膜沉积腔以及下料腔体等。CVD与PVD系统之间还需要硅片的上料和下料装置以及硅片在不同设备间传递的传送装置等。整体体系非常复杂。而且因为在CVD与PVD系统之间传递过程中产品必须暴露于空气中,导致产品的表面受空气中水蒸气、氧气、灰尘等影响造成性能下降;生产中运营费用高,需要的工人数量也较多。
发明内容
本发明所解决的技术问题是提供一种能有效避免产品制备过程中本征和掺杂硅基薄膜以及TCO膜层工序暴露于空气,提升晶体硅异质结太阳电池的性能,降低其生产成本的用于太阳电池制造的8腔体立式HWCVD-PVD一体化设备。
本发明所采用的技术方案是:一种用于太阳电池制造的8腔体立式HWCVD-PVD一体化设备,其特征在于:包括上料腔体、预加热腔体、本征非晶硅薄膜沉积HWCVD腔体、掺杂非晶硅薄膜沉积HWCVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体和下料腔体,上述各腔体之间通过真空锁依次连接,上料腔体进料口和下料腔体的出料口同样设置真空锁,一移动装置由前至后穿接各腔体和真空锁,本征非晶硅薄膜沉积HWCVD腔体、掺杂非晶硅薄膜沉积HWCVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体均为立式结构,上料腔体内设立式载板,立式载板设置于移动装置上呈在本一体化设备中由前至后可移动状态,第二TCO薄膜沉积PVD腔体内设溅射靶,所述下料腔体外接氮气系统和抽真空系统。
所述移动装置为推料进给轨道或移动轨道或移动挂架。
上述各个腔体外接超纯气路系统和/或加热系统和/或冷却水系统和/或抽真空系统。
采用立式结构的本征非晶硅薄膜沉积HWCVD腔体、掺杂非晶硅薄膜沉积HWCVD腔体,以及立式结构的三TCO薄膜沉积PVD腔体,将这两种薄膜沉积装备集成,各腔体之间采用真空锁或真空锁结构连接,产品在设备各腔体之间通过移动装置传递时不暴露大气。
该设备在使用时,各个腔体在硅片未进入前均由其外接真空系统保持真空状态。将需进行镀膜的硅片固定到垂直放置的载板上;上料腔体破真空,打开进料端真空锁,载板由移动装置送入上料腔体中,然后关闭真空锁抽真空,打开上料腔体和加热腔体间的真空锁,载板送入热加热腔体并关闭真空锁抽真空进行预加热,预加热可由腔体内或外接加热系统完成,达到预定的真空度和温度后,打开预加热腔体、本征非晶硅薄膜沉积HWCVD腔体之间的真空锁;将载板送入本征非晶硅薄膜沉积HWCVD腔体中关闭真空锁;在本征非晶硅薄膜沉积HWCVD腔体中进行本征非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开本征非晶硅薄膜沉积HWCVD腔体掺杂非晶硅薄膜沉积HWCVD腔体之间的真空锁,将载板送入到掺杂非晶硅薄膜沉积HWCVD腔体中关闭真空锁;在掺杂非晶硅薄膜沉积HWCVD腔体中进行掺杂非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开该腔室后的真空锁,将载板送入到第一TCO薄膜沉积PVD腔体中关闭真空锁;在第一TCO薄膜沉积PVD腔体中,将温度调整到合适的温度,并准备开始TCO的沉积,第一TCO薄膜沉积PVD腔体起到了TCO沉积前的预加热以及调节HWCVD部分和TCO沉积部分的作用;第一、二、三TCO薄膜沉积PVD腔体之间的真空锁在正常工作情况下保持打开状态,溅射靶安装在第二TCO薄膜沉积PVD腔体中,载板匀速的依次通三个腔体,完成TCO的镀膜过程;然后打开第三TCO薄膜沉积PVD腔体后的真空锁,载板被送入下料腔体后关闭真空锁;在下料腔体中用氮气或洁净空气破真空,然后打开下料腔体出料端的真空锁,将载板移出;关闭真空锁,对下料腔体抽真空。如此,则完成非晶硅/晶体硅异质结太阳电池用硅片的一个表面的本征非晶硅、重掺杂非晶硅和TCO的镀膜工作。
本发明的有益效果是:非晶硅/晶体硅异质结太阳电池制造过程中在硅片的一个表面上沉积的本征非晶硅、掺杂非晶硅和TCO薄膜沉积全过程不暴露空气,减少了大气对硅片薄膜的氧化和空气中水蒸气、灰尘等对各结构表面的污染,从而提高了产品的性能。将HWCVD与PVD进行一体化设计,通过移动装置由前至后依次传送,省却了HWCVD设备的下料腔和PVD的上料腔,以及两台设备之间的传递装置和下上料装置,大大减少设备的复杂性,缩短了工序和工时,降低产线装备购买和运营的费用;减少了工序,从而减少了产品的搬运和与载盘之间对硅片的物理冲击,从而减少了产品的破片率,进一步降低了成本。
附图说明
图1为本发明的主视图。
其中:上料腔体1;预加热腔体2;本征非晶硅薄膜沉积HWCVD腔体3;掺杂非晶硅薄膜沉积HWCVD腔体4;第一TCO薄膜沉积的PVD腔体5;第二TCO薄膜沉积的PVD腔体6;第三TCO薄膜沉积的PVD腔体7;下料腔体8;载板9;移动轨道10;真空锁11;氮气系统12;抽真空系统13。
具体实施方式
下面结合具体实施例,进一步阐述本专利。应理解,这些实施例仅用于说明本专利而不用于限制本专利的范围。此外应理解,在阅读了本专利讲授的内容之后,本领域技术人员可以对本专利作各种改动或修改,这些等价形式同样落于本申请所附权利要求书所限定的范围。
图1所示:一种用于太阳电池制造的8腔体立式HWCVD-PVD一体化设备包括上料腔体1;预加热腔体2;本征非晶硅薄膜沉积HWCVD腔体3;掺杂非晶硅薄膜沉积HWCVD腔体4;第一TCO薄膜沉积的PVD腔体5;第二TCO薄膜沉积的PVD腔体6;第三TCO薄膜沉积的PVD腔体7;下料腔体8;载板9;移动轨道10;真空锁11;氮气系统12;抽真空系统13。上述各HWCVD、PVD腔体均为立式,上料腔体1、预加热腔体2、本征非晶硅薄膜沉积HWCVD腔体3、掺杂非晶硅薄膜沉积HWCVD腔体4、第一TCO薄膜沉积的PVD腔体5、第二TCO薄膜沉积的PVD腔体6、第三TCO薄膜沉积的PVD腔体7、下料腔体8由前至后依次连接且两两间经真空锁11连接,上料腔体1进料端和下料腔体8出料端也设置真空锁,上料腔体1内设垂直的载板9,本一体化设备内设置有由前至后依次上料进给载板在各腔体内移动的移动轨道10,下料腔体8接氮气系统12供氮气破真空、接抽真空系统13抽真空。
在本实施例中上料腔体、预加热腔体、各个HWCVD、各个PVD腔体外接超纯气路系统和/或加热系统和/或冷却水系统和/或抽真空系统,依据现场生产综合选择。

Claims (3)

1.一种用于太阳电池制造的8腔体立式HWCVD-PVD一体化设备,其特征在于:包括上料腔体、预加热腔体、本征非晶硅薄膜沉积HWCVD腔体、掺杂非晶硅薄膜沉积HWCVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体和下料腔体,上述各腔体之间通过真空锁依次连接,上料腔体进料口和下料腔体出料口同样设置真空锁,一移动装置由前至后穿接各腔体和真空锁,本征非晶硅薄膜沉积HWCVD腔体、掺杂非晶硅薄膜沉积HWCVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体均为立式结构,上料腔体内设立式载板,立式载板设置于移动装置上呈在本一体化设备中由前至后可移动状态,第二TCO薄膜沉积PVD腔体内设溅射靶,下料腔体外接氮气系统和抽真空系统。
2.根据权利要求1所述的用于太阳电池制造的8腔体立式HWCVD-PVD一体化设备,其特征在于:所述移动装置为推料进给轨道或移动轨道或移动挂架。
3.根据权利要求1所述的用于太阳电池制造的8腔体立式HWCVD-PVD一体化设备,其特征在于:上述各个腔体外接超纯气路系统和/或加热系统和/或冷却水系统和/或抽真空系统。
CN201810938149.2A 2018-08-17 2018-08-17 用于太阳电池制造的8腔体立式hwcvd-pvd一体化设备 Pending CN110835726A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810938149.2A CN110835726A (zh) 2018-08-17 2018-08-17 用于太阳电池制造的8腔体立式hwcvd-pvd一体化设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810938149.2A CN110835726A (zh) 2018-08-17 2018-08-17 用于太阳电池制造的8腔体立式hwcvd-pvd一体化设备

Publications (1)

Publication Number Publication Date
CN110835726A true CN110835726A (zh) 2020-02-25

Family

ID=69573526

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810938149.2A Pending CN110835726A (zh) 2018-08-17 2018-08-17 用于太阳电池制造的8腔体立式hwcvd-pvd一体化设备

Country Status (1)

Country Link
CN (1) CN110835726A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022027994A1 (zh) 2020-08-03 2022-02-10 苏州迈正科技有限公司 镀膜设备、方法、系统及太阳能电池、组件、发电系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101603171A (zh) * 2009-07-29 2009-12-16 新奥光伏能源有限公司 制备透明导电膜的设备的腔室系统及其工艺
CN202626293U (zh) * 2012-06-25 2012-12-26 吉富新能源科技(上海)有限公司 一种用于异质结太阳能电池薄膜沉积系统
JP2017220536A (ja) * 2016-06-06 2017-12-14 三菱電機株式会社 成膜装置および太陽電池の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101603171A (zh) * 2009-07-29 2009-12-16 新奥光伏能源有限公司 制备透明导电膜的设备的腔室系统及其工艺
CN202626293U (zh) * 2012-06-25 2012-12-26 吉富新能源科技(上海)有限公司 一种用于异质结太阳能电池薄膜沉积系统
JP2017220536A (ja) * 2016-06-06 2017-12-14 三菱電機株式会社 成膜装置および太陽電池の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022027994A1 (zh) 2020-08-03 2022-02-10 苏州迈正科技有限公司 镀膜设备、方法、系统及太阳能电池、组件、发电系统
KR20230029979A (ko) 2020-08-03 2023-03-03 수저우 마이정 테코놀로지 코. 엘티디 코팅 장비, 방법, 시스템 및 태양전지, 모듈, 발전 시스템

Similar Documents

Publication Publication Date Title
US20130171757A1 (en) Advanced platform for passivating crystalline silicon solar cells
US20230307568A1 (en) Coating apparatus, method and system, solar cell, module, and power generation system
CN110835736A (zh) 一种9腔体立式pecvd-pvd一体化硅片镀膜工艺
JP2002064215A (ja) 光起電力モジュールの大量製造装置および方法
US9972740B2 (en) Chemical vapor deposition tool and process for fabrication of photovoltaic structures
EP2089912A2 (en) Photovoltaic device including a metal stack
CN110835739A (zh) 7腔体立式pecvd-pvd一体化硅片镀膜工艺
CN110835744A (zh) 一种9腔体卧式pecvd-pvd一体化硅片镀膜工艺
CN110835726A (zh) 用于太阳电池制造的8腔体立式hwcvd-pvd一体化设备
CN110835735A (zh) 一种8腔体卧式hwcvd-pvd一体化硅片镀膜工艺
CN110835730A (zh) 7腔体立式hwcvd-pvd一体化硅片镀膜生产工艺
CN110835725A (zh) 用于太阳电池制造的7腔体卧式hwcvd-pvd一体化设备
CN110835731A (zh) 一种8腔体立式pecvd-pvd一体化硅片镀膜工艺
CN110735125A (zh) 用于制造异质结太阳能电池的pecvd设备及镀膜方法
CN110835732A (zh) 一种9腔体卧式hwcvd-pvd一体化硅片镀膜工艺
CN110835734A (zh) 一种8腔体卧式pecvd-pvd一体化硅片镀膜工艺
CN107623052B (zh) 一种太阳能电池片钝化用Al2O3镀膜系统和方法
CN113328011A (zh) 一种钝化接触晶硅太阳电池制造装置及方法
CN110835745A (zh) 用于太阳电池制造的8腔体卧式hwcvd-pvd一体化设备
CN110838531A (zh) 用于太阳电池制造的8腔体立式pecvd-pvd一体化设备
CN110838532A (zh) 一种8腔体立式hwcvd-pvd一体化硅片镀膜工艺
CN110835727A (zh) 用于太阳电池制造的8腔体卧式pecvd-pvd一体化设备
CN110835743A (zh) 用于太阳电池制造的9腔体立式hwcvd-pvd一体化设备
CN110835738A (zh) 一种7腔体卧式hwcvd-pvd一体化硅片镀膜工艺
US20110263065A1 (en) Modular system for high-rate deposition of thin film layers on photovoltaic module substrates

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20200225

WD01 Invention patent application deemed withdrawn after publication