CN110835733A - 一种9腔体立式hwcvd-pvd一体化硅片镀膜工艺 - Google Patents
一种9腔体立式hwcvd-pvd一体化硅片镀膜工艺 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
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- 238000000034 method Methods 0.000 claims abstract description 12
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- 239000010409 thin film Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000000427 thin-film deposition Methods 0.000 claims description 15
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
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- 238000009501 film coating Methods 0.000 claims description 6
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
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- 238000005516 engineering process Methods 0.000 description 2
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及一种9腔体立式HWCVD‑PVD一体化硅片镀膜工艺,上料腔体、预加热腔体、本征非晶硅薄膜沉积HWCVD腔体、掺杂非晶硅薄膜沉积HWCVD腔体、过渡腔体、第一、二、三TCO薄膜沉积PVD腔体和下料腔体通过真空锁依次连接且头尾设置真空锁,一移动装置由前至后穿接各腔体和真空锁,上料腔体内设立式载板,立式载板设置于移动装置上呈在本一体化设备中由前至后可移动状态,第二TCO薄膜沉积PVD腔体内设溅射靶,上述各个腔体外接超纯气路、加热系、抽真空系统。能有效避免产品制备过程工序暴露于空气,提升晶体硅异质结太阳电池的性能,降低其生产成本。
Description
技术领域
本发明涉及高效晶体硅太阳电池制造领域,特别是一种用于太阳电池制造的9腔体立式HWCVD-PVD一体化硅片镀膜工艺。
背景技术
目前,一类先进高效的晶体硅太阳电池是基于非晶硅/晶体硅异质结结构。其生产技术中非常关键的两个步骤是非晶硅基薄膜的沉积(包括本征层和掺杂层,材质为非晶硅、微晶硅、纳米硅、掺氧非晶硅等)以及透明导电氧化物TCO层的沉积。比较常用的非晶硅基薄膜的沉积方法是低温化学气相沉积法,包括等离子体化学气相沉积(PECVD)和热丝化学气相沉积(HWCVD)两种;而TCO层的制备一般采用PVD法(磁控溅射法最常用)。在生产中,这两种技术所对应的设备通常是分开来的。即低温CVD设备是一套独立的系统,通常包括上料及预加热腔体、本征层沉积腔、掺杂沉积腔(p型或n型)以及下料腔体等几部分;而PVD设备也要包括上料腔、预加热腔、薄膜沉积腔以及下料腔体等。CVD与PVD系统之间还需要硅片的上料和下料装置以及硅片在不同设备间传递的传送装置等。整体体系非常复杂。而且因为在CVD与PVD系统之间传递过程中产品必须暴露于空气中,导致产品的表面受空气中水蒸气、氧气、灰尘等影响造成性能下降;生产中运营费用高,需要的工人数量也较多。
发明内容
本发明所解决的技术问题是提供一种能有效避免产品制备过程中本征和掺杂硅基薄膜以及TCO膜层工序暴露于空气,提升晶体硅异质结太阳电池的性能,降低其生产成本的用于太阳电池制造的一种9腔体立式HWCVD-PVD一体化硅片镀膜工艺。
本发明所采用的技术方案是:包括上料腔体、预加热腔体、本征非晶硅薄膜沉积HWCVD腔体、掺杂非晶硅薄膜沉积HWCVD腔体、过渡腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体和下料腔体,上述各腔体之间通过真空锁依次连接,上料腔体进料口和下料腔体出料口同样设置真空锁,一移动装置由前至后穿接各腔体和真空锁,本征非晶硅薄膜沉积HWCVD腔体、掺杂非晶硅薄膜沉积HWCVD腔体、第一TCO薄膜沉积PVD腔体、第二TCO薄膜沉积PVD腔体、第三TCO薄膜沉积PVD腔体均为立式结构,上料腔体内设立式载板,立式载板设置于移动装置上呈在本一体化设备中由前至后可移动状态,第二TCO薄膜沉积PVD腔体内设溅射靶,过渡腔体外接加热系统和/或冷却水系统和/或抽真空系统,下料腔体外接氮气系统和/或抽真空系统。
所述移动装置为推料进给轨道或移动轨道或移动挂架。
上述各个腔体外接超纯气路系统和/或加热系统和/或冷却水系统和/或抽真空系统。
一种9腔体立式HWCVD-PVD一体化硅片镀膜工艺,采用立式结构的本征非晶硅薄膜沉积HWCVD腔体、掺杂非晶硅薄膜沉积HWCVD腔体,以及立式结构的三TCO薄膜沉积PVD腔体,将这两种薄膜沉积装备集成,各腔体之间采用真空锁结构连接,产品在设备各腔体之间通过移动装置传递时不暴露大气。
该设备在使用时,各个腔体在硅片未进入前均由其外接真空系统保持真空状态。将需进行镀膜的硅片固定到垂直放置的载板上;上料腔体破真空,打开进料端真空锁,载板由移动装置送入上料腔体中,然后关闭真空锁抽真空,打开上料腔体和加热腔体间的真空锁,载板送入热加热腔体并关闭真空锁抽真空进行预加热,预加热可由腔体内或外接加热系统完成,达到预定的真空度和温度后,打开预加热腔体、本征非晶硅薄膜沉积HWCVD腔体之间的真空锁;将载板送入本征非晶硅薄膜沉积HWCVD腔体中关闭真空锁;在本征非晶硅薄膜沉积HWCVD腔体中进行本征非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开本征非晶硅薄膜沉积HWCVD腔体掺杂非晶硅薄膜沉积HWCVD腔体之间的真空锁,将载板送入到掺杂非晶硅薄膜沉积HWCVD腔体中关闭真空锁;在掺杂非晶硅薄膜沉积HWCVD腔体中进行掺杂非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开该腔室后的真空锁,将载板送入到过渡腔体中,通过在过渡腔体内抽真空过渡、加热过渡、冷却过渡调整载板温度,起到了TCO沉积前的预加热以及调节HWCVD部分和TCO沉积部分的作用;再打开其后真空锁送入第一TCO薄膜沉积PVD腔体中关闭真空锁;第一、二、三TCO薄膜沉积PVD腔体之间的真空锁在正常工作情况下保持打开状态,溅射靶安装在第二TCO薄膜沉积PVD腔体中,载板匀速的依次通三个腔体,完成TCO的镀膜过程;然后打开第三TCO薄膜沉积PVD腔体后的真空锁,载板被送入下料腔体后关闭真空锁;在下料腔体中用氮气或洁净空气破真空,然后打开下料腔体出料端的真空锁,将载板移出;关闭真空锁,对下料腔体抽真空。如此,则完成非晶硅/晶体硅异质结太阳电池用硅片的一个表面的本征非晶硅、重掺杂非晶硅和TCO的镀膜工作。
本发明的有益效果是:非晶硅/晶体硅异质结太阳电池制造过程中在硅片的一个表面上沉积的本征非晶硅、掺杂非晶硅和TCO薄膜沉积全过程不暴露空气,减少了大气对硅片薄膜的氧化和空气中水蒸气、灰尘等对各结构表面的污染,从而提高了产品的性能。将HWCVD与PVD进行一体化设计,通过移动装置由前至后依次传送,省却了HWCVD设备的下料腔和PVD的上料腔,以及两台设备之间的传递装置和下上料装置,大大减少设备的复杂性,缩短了工序和工时,降低产线装备购买和运营的费用;减少了工序,从而减少了产品的搬运和与载盘之间对硅片的物理冲击,从而减少了产品的破片率,进一步降低了成本。
附图说明
图1为本发明的主视图。
其中:上料腔体1;预加热腔体2;本征非晶硅薄膜沉积HWCVD腔体3;掺杂非晶硅薄膜沉积HWCVD腔体4;过渡腔体5;第一TCO薄膜沉积的PVD腔体6;第二TCO薄膜沉积的PVD腔体7;第三TCO薄膜沉积的PVD腔体8;下料腔体9;载板10;移动轨道11;真空锁12;氮气系统13;抽真空系统14;加热系统15。
具体实施方式
下面结合具体实施例,进一步阐述本专利。应理解,这些实施例仅用于说明本专利而不用于限制本专利的范围。此外应理解,在阅读了本专利讲授的内容之后,本领域技术人员可以对本专利作各种改动或修改,这些等价形式同样落于本申请所附权利要求书所限定的范围。
图1所示:一种用于太阳电池制造的9腔体立式HWCVD-PVD一体化设备包括上料腔体1、预加热腔体2、本征非晶硅薄膜沉积HWCVD腔体3、掺杂非晶硅薄膜沉积HWCVD腔体4、过渡腔体5、第一TCO薄膜沉积的PVD腔体6、第二TCO薄膜沉积的PVD腔体7、第三TCO薄膜沉积的PVD腔体8、下料腔体9、载板10、移动轨道11、真空锁12、氮气系统13、抽真空系统14、加热系统15。上述各HWCVD、PVD腔体均为立式,上料腔体1、预加热腔体2、本征非晶硅薄膜沉积HWCVD腔体3、掺杂非晶硅薄膜沉积HWCVD腔体4、过渡腔体5、第一TCO薄膜沉积的PVD腔体6、第二TCO薄膜沉积的PVD腔体7、第三TCO薄膜沉积的PVD腔体8、下料腔体9由前至后依次连接且两两间经真空锁12连接,上料腔体1进料端和下料腔体9出料端也设置真空锁,上料腔体1内设垂直的载板10,本一体化设备内设置有由前至后依次上料进给载板在各腔体内移动的移动轨道11,下料腔体9接氮气系统14供氮气破真空、接抽真空系统14抽真空,过渡腔体5接加热系统15供热、接真空系统14抽真空。
一种9腔体立式HWCVD-PVD一体化硅片镀膜工艺,采用立式结构的本征非晶硅薄膜沉积HWCVD腔体、立式结构掺杂非晶硅薄膜沉积HWCVD腔体,以及三个立式结构的TCO薄膜沉积PVD腔体,将上述薄膜沉积腔体集成,各腔体之间采用真空锁结构连接,各个腔体在硅片未进入前均由其外接真空系统保持真空状态,将需进行镀膜的硅片固定到垂直放置的载板上;上料腔体破真空,打开进料端真空锁,载板由移动装置送入上料腔体中,然后关闭真空锁抽真空,打开上料腔体和加热腔体间的真空锁,载板送入热加热腔体并关闭真空锁抽真空进行预加热,预加热可由腔体内或外接加热系统完成,达到预定的真空度和温度后,打开预加热腔体、本征非晶硅薄膜沉积HWCVD腔体之间的真空锁;将载板送入本征非晶硅薄膜沉积HWCVD腔体中关闭真空锁;在本征非晶硅薄膜沉积HWCVD腔体中进行本征非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开本征非晶硅薄膜沉积HWCVD腔体掺杂非晶硅薄膜沉积HWCVD腔体之间的真空锁,将载板送入到掺杂非晶硅薄膜沉积HWCVD腔体中关闭真空锁;在掺杂非晶硅薄膜沉积HWCVD腔体中进行掺杂非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开该腔室后的真空锁,将载板送入到过渡腔体中,通过在过渡腔体内抽真空过渡、加热过渡、冷却过渡调整载板温度,起到了TCO沉积前的预加热以及调节HWCVD部分和TCO沉积部分的作用;再打开其后真空锁送入第一TCO薄膜沉积PVD腔体中关闭真空锁;第一、二、三TCO薄膜沉积PVD腔体之间的真空锁在正常工作情况下保持打开状态,溅射靶安装在第二TCO薄膜沉积PVD腔体中,载板匀速的依次通三个腔体,完成TCO的镀膜过程;然后打开第三TCO薄膜沉积PVD腔体后的真空锁,载板被送入下料腔体后关闭真空锁;在下料腔体中用氮气或洁净空气破真空,然后打开下料腔体出料端的真空锁,将载板移出;关闭真空锁,对下料腔体抽真空,完成非晶硅/晶体硅异质结太阳电池用硅片的一个表面的本征非晶硅、重掺杂非晶硅和TCO的镀膜工作。
在本实施例中上料腔体、预加热腔体、各个HWCVD、各个PVD腔体外接超纯气路系统和/或加热系统和/或冷却水系统和/或抽真空系统,依据现场生产综合选择;过渡腔体5接的加热系统15同样具备降温调整的加热功效,用于满足温度调整的不同需求。
Claims (1)
1.一种9腔体立式HWCVD-PVD一体化硅片镀膜工艺,其特征在于:采用立式结构的本征非晶硅薄膜沉积HWCVD腔体、立式结构掺杂非晶硅薄膜沉积HWCVD腔体,以及三个立式结构的TCO薄膜沉积PVD腔体,将上述薄膜沉积腔体集成,各腔体之间采用真空锁结构连接,各个腔体在硅片未进入前均由其外接真空系统保持真空状态,将需进行镀膜的硅片固定到垂直放置的载板上;上料腔体破真空,打开进料端真空锁,载板由移动装置送入上料腔体中,然后关闭真空锁抽真空,打开上料腔体和加热腔体间的真空锁,载板送入热加热腔体并关闭真空锁抽真空进行预加热,预加热可由腔体内或外接加热系统完成,达到预定的真空度和温度后,打开预加热腔体、本征非晶硅薄膜沉积HWCVD腔体之间的真空锁;将载板送入本征非晶硅薄膜沉积HWCVD腔体中关闭真空锁;在本征非晶硅薄膜沉积HWCVD腔体中进行本征非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开本征非晶硅薄膜沉积HWCVD腔体掺杂非晶硅薄膜沉积HWCVD腔体之间的真空锁,将载板送入到掺杂非晶硅薄膜沉积HWCVD腔体中关闭真空锁;在掺杂非晶硅薄膜沉积HWCVD腔体中进行掺杂非晶硅薄膜层的沉积,沉积结束后抽除残余反应气体,达到所需真空度后打开该腔室后的真空锁,将载板送入到过渡腔体中,通过在过渡腔体内抽真空过渡、加热过渡、冷却过渡调整载板温度,起到了TCO沉积前的预加热以及调节HWCVD部分和TCO沉积部分的作用;再打开其后真空锁送入第一TCO薄膜沉积PVD腔体中关闭真空锁;第一、二、三TCO薄膜沉积PVD腔体之间的真空锁在正常工作情况下保持打开状态,溅射靶安装在第二TCO薄膜沉积PVD腔体中,载板匀速的依次通三个腔体,完成TCO的镀膜过程;然后打开第三TCO薄膜沉积PVD腔体后的真空锁,载板被送入下料腔体后关闭真空锁;在下料腔体中用氮气或洁净空气破真空,然后打开下料腔体出料端的真空锁,将载板移出;关闭真空锁,对下料腔体抽真空,完成非晶硅/晶体硅异质结太阳电池用硅片的一个表面的本征非晶硅、重掺杂非晶硅和TCO的镀膜工作。
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