CN102356450A - Deposition apparatus with high temperature rotatable target and method of operating thereof - Google Patents

Deposition apparatus with high temperature rotatable target and method of operating thereof Download PDF

Info

Publication number
CN102356450A
CN102356450A CN2010800135583A CN201080013558A CN102356450A CN 102356450 A CN102356450 A CN 102356450A CN 2010800135583 A CN2010800135583 A CN 2010800135583A CN 201080013558 A CN201080013558 A CN 201080013558A CN 102356450 A CN102356450 A CN 102356450A
Authority
CN
China
Prior art keywords
substrate
target
depositing device
temperature
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800135583A
Other languages
Chinese (zh)
Inventor
J·米勒
R·特拉斯尔
J·刘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP09155752A external-priority patent/EP2230325A1/en
Priority claimed from US12/408,409 external-priority patent/US20100236920A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102356450A publication Critical patent/CN102356450A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3421—Cathode assembly for sputtering apparatus, e.g. Target using heated targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A deposition apparatus (100) and a method for sputtering material on a substrate is provided with a substrate holder (110) for holding the substrate, a rotatable target (120) adapted for being sputtered, and a heating system including a back side heating (130) for heating the substrate from the back and a front side heating for heating the substrate from the front. The rotatable target acts as the front side heating and is adapted for heating the substrate to a temperature of at least 100 DEG C.

Description

Depositing device and this operation of equipment method with high temperature rotatable target
Technical field
The application relates to depositing device and this operation of equipment method by and large.The application relates to the base plate coating technical solution; Involve equipment; Technology and be used for the deposition; Patterning; Material with substrate and coating processing; Have representative examples, comprise (but being not limited to) and involve following application: semiconductor and dielectric material and equipment; Silica-based wafer; Flat-panel monitor (for example TFT); Mask and filter; Power conversion and holder (photovoltaic cell for example; Fuel cell; And battery); Solid-state illumination (for example LED and OLED); Magnetic and optics holder; MEMS (micro electro mechanical system) (MEMS) and nano-electromechanical system (NEMS); Low-light and ray machine electric system (OEMS); Low-light and photoelectric subassembly; Transparency carrier; Building and vehicle glass; The metal system that is used for metal and polymer foil and encapsulation; And micron moulding and nanometer molding technology.More particularly, the application relates to sputtering equipment and this operation of equipment method with rotatable target.
Background technology
In many application, must be on substrate stringer.This used " substrate " speech should comprise nonelastic substrate (for example, wafer or glass plate) and elastic base plate (for example, net sheet (web) or paillon foil (foil)) both.In particular, the known technology that is used for sedimentary deposit is vapor deposition and sputter.
In vapor deposition treatment, the material of heating desire deposition is condensate on this substrate its evaporation then.Sputter is a kind of vacuum coated processing that is used for depositing various material film to substrate surfaces.For example, available sputter comes depositing metal layers, for example aluminium or thin layers of ceramic.During sputter process,, and the target that this coating material is formed from this material is sent to the substrate that desire is coated with by this target material surface of inert gas ion bombardment that quickens with high voltage.When this target outer surface of gas ion bump, its momentum sends this material atom to, so some energy that can obtain to be enough to overcome its joint energy in this material atom is to deviate from from this target material surface and to be deposited on this substrate.On substrate, this material atom forms the material membrane of expection.The thickness of institute's deposit film except other, depends on the time length of this exposure of substrates in this sputter process.
For example, in the production of thin-film solar cells, use sputter.Generally speaking, thin-film solar cells comprises the oxide layer (TCO) of carrying on the back contact, absorbed layer and transparent and electrically conductive.Usually, this back of the body contact and this tco layer utilize sputter to produce, and this absorbed layer is generally then made in chemical vapor deposition process.Compare with vapor deposition treatment, for example chemical vapour deposition (CVD), sputter also because some material can sputter but can't evaporate and preponderate.In addition, the layer that sputter process produced is better than vapor deposition treatment usually to the adherence of this substrate.Therefore moreover sputter is a kind of directive processing, and the material transfer of the overwhelming majority are to substrate, and can not be coated with the inner space (as during vapor deposition is used) of this depositing device.
Although sputter tool advantage, sputter also have shortcoming to exist.Compare with vapor deposition, substrate is carried out sputter needs the long period.Sputter rate is more much lower than vapor deposition speed usually.Therefore always hope to accelerate the speed of sputter process.
On the other hand, except the preferable adherence of sputtering layer, always hope further to improve the quality of sedimentary deposit to substrate.
Summary of the invention
In view of above-mentioned, the depositing device and the method that are used on substrate, depositing one deck are provided.
According to an aspect, provide a kind of on substrate the depositing device of sputter material, this depositing device has: the substrate retaining piece, in order to this substrate of fixing; Rotatable target is suitable for being subjected to sputter; And heating system, comprise in order to heat from the dorsal part heating of this substrate of dorsal part heating and in order to the front side of this substrate of heating from the front side.This rotatable target act as this front side heating, and is suitable for heating this substrate at least 100 ℃.
According on the other hand; The method of deposition one deck deposition materials on a kind of substrate in depositing device is provided; This method comprises: the fixing substrate; Make the rotatable target rotation; Sputter material on this substrate; Utilize this front side heating that this substrate is heated at least 100 ℃, and use this rotatable target to come this substrate of heating from the front side.
This front side heating is suitable for that this substrate is heated to 100 ℃ of these descriptions must be understood that this front side heating is suitable for making this substrate to be warming up to 100 ℃.
According on the other hand, provide a kind of on substrate the depositing device of sputter material, this depositing device has: the substrate retaining piece, in order to this substrate of fixing; Rotatable target is suitable for being subjected to sputter; And heating system, comprise in order to heat from the dorsal part heating of this substrate of dorsal part heating and in order to the front side of this substrate of heating from the front side.This rotatable target act as this front side heating, and is suitable for making at least 100 ℃ of this substrate temperature increases.
According on the other hand; The method of deposition one deck deposition materials on a kind of substrate in depositing device is provided; This method comprises: the fixing substrate; Make the rotatable target rotation; Sputter material on this substrate; Utilize this front side heating to make at least 100 ℃ of this substrate temperature increases, and use this rotatable target to heat this substrate from the front side.
According to embodiment, this front side heating is suitable for this substrate is heated at least 200 ℃, more typically is heated at least 300 ℃.According to embodiment, this front side heating is suitable for making at least 200 ℃ of this substrate temperature increases, more typically increases at least 300 ℃.
But find out easily in others, details, advantage and feature structure accessory rights claim, specification and the accompanying drawing.
Embodiment also is directed against the equipment of carrying out each revealing method, and comprises the equipment unit of carrying out each described method step.These method steps can utilize nextport hardware component NextPort to carry out, utilize computer program or this both combination in any or any alternate manner of suitable software.In addition, embodiment also to the manufacturing approach of the operation of equipment method of describing or the equipment of describing.It comprises the method step of carrying out these functions of the equipments or making this equipment unit.
Description of drawings
Describe in execution mode at some summary of the invention that other is more pointed out in the detailed aspect of the present invention, and a part is shown with reference to these accompanying drawings.Wherein:
Fig. 1 is the summary profile according to the depositing device of said embodiment;
Fig. 2 is the summary profile according to the rotatable target of said embodiment;
Fig. 3 is the summary profile according to the rotatable target of said embodiment;
Fig. 4 is the summary profile according to the depositing device of said embodiment;
Fig. 5 is summary time-temperature profile of describing deposition processes;
Fig. 6 is summary time-temperature profile of describing another deposition processes;
Fig. 7 is summary time-temperature profile of describing another deposition processes;
Fig. 8 describes the dependent temperature-mass density curve chart of layer density to depositing temperature;
Fig. 9 is the summary profile according to the rotatable target of said embodiment; And
Figure 10 is the summary profile according to the rotatable target of said embodiment.
Embodiment
In following description for accompanying drawing, identical element numbers is represented same components.Generally speaking, only narrate the different place of indivedual embodiment.
Processing with said material coated substrates is commonly referred to the film application." coating " speech and " deposition " speech are synonym character as used herein.
This depositing device comprises handles the source.Generally speaking, this is one and is suitable for by the rotatable target of sputter.As discussing in more detail hereinafter, this rotatable target can be the rotatable target of joint or disengaged rotatable target.
Generally speaking, sputter can diode sputtering or two kinds of forms of magnetron sputtering carry out.The special tool advantage of magnetron sputtering is because deposition rate is quite high.Usually, magnet is set in this rotatable target.By magnet being arranged on this target rear, promptly inner in the situation of rotatable target at this target, be positioned at the free electron of institute this target material surface below of the magnetic field that produced next-door neighbour with seizure, it is mobile and can't break away from that these electronics are forced in this inside, magnetic field.This makes the possibility of these gas molecules of ionization increase several magnitude usually.This transfers significantly to increase deposition rate.
When using this target to heat, can control the target temperature usually so that target is limited by this target melting temperature as the front side of this substrate.In addition, in the situation of two-piece type or multi-piece type target, for example in the situation of target tube and target arm (target backing tube), this target must be restricted to take the different heat expansion coefficient of this arm and this target into account.In other words, this heating must be can not allow the mode that this multi-piece type target breaks because of heating carry out.In addition, common situation further must be considered and can not allow magnet surpass specified temp.
According to some embodiment, this front side heating utilizes a plurality of rotatable targets to carry out.That is to say that this depositing device comprises at least two rotatable targets.A plurality of targets act as the front side heating of this substrate.In addition, according to some embodiment, the thermal profile that adds of this substrate can be provided in some steps, for example, one of a plurality of rotatable targets are heated to the temperature lower than other rotatable target.
Usually, the magnet that is used in the rotatable target is permanent magnet.Permanent magnet generally needs cooling, because these permanent magnets are set in this target tube, and this target tube according on the one hand, keeps at high temperature.During operation, it is very hot that these magnet become.This be because the rotatable target that these magnet are subjected to ion bombardment round.Since the collision that is taken place, and cause target to be heated.
For this reason, regular meeting provides the cooling of this target and magnet.The purpose of doing like this is magnet is remained under the suitable operating temperature.In addition, it is generally acknowledged that the optimal deposition temperature is lower than a certain specified temp.
Unexpectedly, the inventor finds that the high temperature target can be promoted the quality of deposition substrate when comparing with the same application of lower temperature.When mentioning quality in this application, be interpreted as, for example, the optical parametric of resistance coefficient (should, depend on application, having can high particular value that can be low), for example absorption spectrum, thickness, density, hardness, adherence, scratch resistance etc.Depend on application-specific, need to set in these character of this coating one or more for desired value.In addition, this value can be different in one deck or between the substrate of some coatings.
In check during than the high target Influence of Temperature, more find processing that material is pounded from this target, i.e. strictness is sputter, can not receive higher temperature influences too much.That is to say that not finding to dissolve the sputter process step of this material from this target can temperature influence.Further to demonstrate be the layer deposition that high temperature target on the substrate exerted an influence and caused improvement in research.Therefore,, provide heating to have superiority, to heat this substrate and the heating from the front side is provided from the substrate front side according to the application's aspect.In order to accomplish the latter, use rotatable target to be used as the front side heating.
But, particularly with regard to magnetron sputtering, should be taken into account and magnet must be remained below under the operating temperature of a certain specific threshold.The general threshold value of magnet operation is about 80 ℃.In order to make the target can be than the threshold temperature of magnet heat, it be feasible providing heat to isolate outside between target and the target inside.This kind isolation can be this target material self (if it has thermal insulation).But also possibly and carry extra layer is set between the target tube of target outside this at the outer target that should receive sputter.For example, this extra layer also can be the knitting layer that target material is engaged with this target tube.
Except the front side heating of carrying out by this target, also provide from the dorsal part heating of this substrate of dorsal part heating.Utilize this combined heated system, can guarantee that this substrate keeps at high temperature.According to many aspects of the present invention, this front side heating makes this substrate rise at least 100 ℃.Find, this temperature deposit the layer quality be better than depositing at a lower temperature the layer.Heating causes temperature to rise at least 200 ℃, 300 ℃ or even further strengthened at least 400 ℃ the time in this front side in this influence.Generally speaking, do not have very clear and definite correlation between this target temperature and this substrate temperature.Possibly have target and be heated to for example high temperature up to 400 ℃, however the rough embodiment in room temperature range of this substrate.Therefore, according to the application, must guarantee that this substrate can be 100 ℃ or even hotter because this target act as the effect of front side heating at least.
The application is the coating to some materials.In particular, the application relates to the coating of glass.In a single day glass plate has quite high heat storage capacity usually, therefore is heated, for example before getting into deposition chambers, temperature decline is very gentle.But by the front side heating is provided, whole production is handled to become and is more met economic benefit, because can reduce preheating.In addition, if compare with wafer coating, the positive effect of extra front side heating comes into force at a lower temperature.In particular, when coated glass, to rise be at least 150 ℃ or 200 ℃ to the temperature that causes of this front side heating usually.
The application is usually also relevant for wafer coating.The heat storage capacity of wafer is very low usually.Therefore, in the prior art, if first preheating before getting into deposition chambers, wafer is considerable in the temperature decline of deposition chamber.Therefore, by using the application, by the front side that wafer can be heated at least 100 ℃ heating is provided, the temperature in this chamber can remain on high temperature chamber in particular.
Usually wafer can be heated to high temperature.Generally speaking, the front side adds heat energy wafer is heated at least 250 ℃, 300 ℃ or or even 400 ℃ temperature.In the embodiment of many coating wafers, for example between 350 ℃ and 500 ℃ or even higher temperature between 550 ℃ cause the positive effect of attractive especially quality improvement.This takes place when for example, can be coated with silicon nitride layer on wafer.
Usually, the thickness of sedimentary deposit is less than 1 millimeter, more commonly less than 1 micron, even more typical be less than 100 nanometers.
Fig. 1 illustrates the summary profile of an embodiment of depositing device as described herein.This depositing device 100 comprises substrate retaining piece 110, in order to the substrate of fixing desire coating.This depositing device 100 more comprises rotatable target 120, and this rotatable target 120 is suitable for receiving sputter.Arrow shown in Figure 1 stresses-when operation-and this target is to continue rotation.This rotatable target is as the front side heating of this substrate.In addition, this substrate also heats from dorsal part.For this reason, dorsal part heating 130 is provided.
Usually, this rotatable target comprises target tube.This target tube is represented with element numbers 121 in Fig. 2.In addition, according to said embodiment, this rotatable target comprises magnetic element.In Fig. 2, this magnetic element is with element numbers 122 expressions.Usually, this magnetic element is set at the inner downside of this target.In this situation, carry out so-called downward sputter (sputter-down), wherein this target is set at this substrate top.In so-called upwards sputter (sputter-up) processing, target is set at the substrate below.In this situation, this magnetic element is set at this target upside.
More general saying, this magnetic element are set at that side of substrate that this target is coated with near desire.This rotatable target is normally cylindric.According to many embodiment, the magnetic element of at least a portion surface-with its section-be annular.This also in Fig. 2 and 3 illustration go out, wherein this magnetic element is partly conformal with the shape of this rotatable target than downside surface.
In Fig. 2, can see between shaped surfaces part and this target tube 121 of this magnetic element 122 apart from d.According to exemplary embodiments, this distance is less than 5 millimeters, more typically less than 3 millimeters, and even more typically less than 2 millimeters.Because of possessing short distance, the magnetic effect of this magnetic element can be brought into play fully.In addition, this is avoided cooling off this target tube effectively around this magnetic element flowing coolant in the close clearance between target tube and magnetic element.This is that the temperature of this magnetic element then receives the restriction of operational threshold temperature because this rotatable target has High Operating Temperature (details see below), is higher than the i.e. no longer running of this temperature magnet.
As said, expectation is heated to high temperature with this target.Generally speaking, hope simultaneously to keep this magnetic element to be lower than this operational threshold temperature.By the space that dwindles between this magnetic element and this target, the regional cooling of this of this target tube can not be effectively, because the gap that this cooling agent stream must be flowed through is very little.Therefore, this target only can be by slight cooling.Can more strengthen this effect by this target tube isolated material is provided, this can more go through hereinafter.
Fig. 3 illustrates another embodiment of this rotatable target.Except assembly shown in Figure 2, pipe 123 in Fig. 3 more comprises.Usually, pipe is suitable for this magnetic element of fixing in this.Pipe and this magnetic element all are static in being somebody's turn to do, and this target tube is suitable for rotation usually.According to some embodiment, Guan Yuyi interface fit in this.In Fig. 3, represent this interface with element numbers 125.Usually, the upside at this interface is connected with this interior pipe, and the downside at this interface is connected with this magnetic element.Should be filled air by interior pipe in many examples.Its complementary space between interior pipe and the target tube can be filled cooling agent, to cool off this magnetic element.Represent this space with element numbers 124 among Fig. 3.This target tube temperature inside is depended in the selection of cooling agent.Usually, cool off with oil or water.Temperature in general this target tube is between 40 ℃ and 80 ℃.
Fill this target tube with cooling agent a kind of inner cooling system of this rotatable target that is set at is provided.This cooling system is as the inner space of this target of cooling.The most important thing is that this is a magnetic element.Cooling system according to said embodiment must be suitable for this magnetic element is remained below under the temperature of this magnetic element operational threshold temperature.On the other hand, this cooling system must be suitable for not cooling off as far as possible this rotatable target, so that this rotatable target still can be carried out the front side heating of this substrate.According to general embodiment, a kind of Control and Feedback loop is provided, the cooling package of this this rotatable target of Control and Feedback circuit controls.Usually, this Control and Feedback loop comprises substrate temperature measurement and control appliance, and metering valve for example is with the supply cooling fluid.Another kind is selected or except this target temperature survey, substrate temperature measurement can be provided.For example, this substrate temperature often possibly is controlled at predetermined minimum temperature or greater than predetermined minimum temperature.If depend on that temperature measurement result adjusts this cooling fluid temperature, even this substrate is too cold then heats up, perhaps the too high then cooling of this substrate temperature.Usually, water is used as cooling fluid.
Fig. 4 summary illustrates an embodiment of depositing device as described herein.With compare in the feature structure shown in the embodiment of Fig. 1, the embodiment of Fig. 4 more comprises slit 410.Slit is used to allow substrate get into this depositing device, and after coating, sees this substrate off this depositing device.This embodiment more illustrates hop 420, for example is suitable for moving the roller of this substrate retaining piece 110, for example receives new substrate to this depositing device right side to see through slit 410.
In addition, this depositing device comprises outlet 430, to link with vacuum pump.In other embodiments, element numbers 430 expressions are set directly at least one vacuum pump on this depositing device.In addition, this equipment comprises the inlet 440 that sputter gas is used.Usually, this sputter gas is the inert gas that when operation, feeds this depositing device.According to exemplary embodiments, this sputter gas is an argon gas.This sputter gas is to utilize electronics Ionized, quickens to dissolve this target material from this target towards this target then.Air pressure in general this depositing device is between 10-2 millibar and 10-4 millibar.
The gas that feeds this depositing device can more comprise a kind of element that engages with this target material.For example, can feed nitrogen then and to this equipment, produce silicon nitride layer by providing bulk si as target.In addition, in wishing to get the situation of hydrogeneous silicon nitride layer, except nitrogen, also add small amount of ammonia gas (NH 3) or hydrogen (H 2).From passivation properties, this is favourable to layer quality.
Fig. 5 illustrates the summary curve chart of the substrate temperature of desire coating with respect to the time.Must comparison diagram 5 to 7 to understand the advantage of said embodiment.
Fig. 5 describes the time-temperature relation of deposition processes.Therein, the substrate of desire coating is heated at this and is called T MaxHigh temperature.Usually, by the heating from both sides, therefore the temperature when getting into this depositing device or this processing region is T to this substrate before getting into this depositing device MaxAt time A, this substrate gets into this depositing device and the reduction of its temperature is very many, because in this depositing device, there is not the front side heating.Therefore, between time A and B, this substrate is becoming than this temperature T very soon MaxBe applied under the temperature of much lower reduction.Usually, this temperature (for example at time B) is 300 ℃ approximately.In case this substrate is coated with, is about to this substrate and from this depositing device, takes out to cool off.Shown in this curve after time B.Temperature decrease after time A is because there is not the front side heating in this depositing device, but the dorsal part heating possibly only arranged.Therefore, the total heating efficiency in this depositing device is not high enough, and this substrate can't be remained on high temperature.
Fig. 6 illustrates the time-temperature relation according to the deposition processes of said embodiment.Usually, temperature trend shown in is on the wafer as substrate, to record.As previously mentioned, according to some embodiment, this substrate was heated to preheat temperature T before getting into this depositing device MaxAccording to exemplary embodiments, this temperature T MaxBe at least 300 ℃ scope, more typically at least 400 ℃, even more typically 450 ℃ or even 500 ℃.But, according to the application, compare with the preheating of routine, might reduce preheating, do not have too big cooling in this depositing device because be expected at.Therefore, according to some embodiment, this preheat temperature T MaxThe highest 500 ℃, more typically the highest 450 ℃, even more typically the highest 400 ℃.By reducing preheating power, can reduce total power consumption, cause more cheap coating production.In other embodiments, when particularly being TCO as if this sputter material, this preheat temperature is the highest 400 ℃, and more typically the highest 350 ℃, or even more typically the highest 300 ℃.
Then this substrate is fed to this depositing device, this depositing device comprises heating system, and this heating system has the dorsal part heating to heat the heating of this substrate dorsal part and front side to heat this substrate front side.Therefore, substrate temperature possibly remained on high level.According to embodiment illustrated in fig. 6, this temperature is maintained at temperature T Max
As described in connection with Fig. 5, this substrate is applied during time A and B.Therefore,, can utilize at least a of following influence according to said embodiment: the first, to compare with the absolute value of temperature, this temperature reduces seldom during the coated.For example, this reduction can be less than T Max20% or even less than 10%.According to some embodiment, this reduction remains fixed in this temperature place, wherein " fixes " and in this context, means 5% maximum deviation usually.
The second, the absolute temperature of this substrate is at high level.According to an aspect, this temperature is at least 100 ℃.According to another embodiment again, this substrate temperature is maintained at least 200 ℃, more typically at least 300 ℃ or even 400 ℃.The high temperature of this substrate has improved layer quality.
Fig. 7 illustrates another deposition embodiment as described herein.As in the embodiment of Fig. 6, the heating system that is arranged in this depositing device is suitable for this substrate is kept high temperature.But opposite with the embodiment that explains with reference to figure 6, this temperature is less than original preheat temperature T MaxTherefore, in case this substrate gets into this depositing device at time A, this substrate temperature that kind as shown in Figure 7 reduces a little.In some example, this reduction is this temperature T to greatest extent Max15%, be 10% or even 5% usually to greatest extent.In any situation, this substrate temperature still kept at least 100 ℃ condition during this reduction must meet deposition processes, therefore compared with deposition technique of the prior art, and this layer quality can be improved.In exemplary embodiments, this substrate temperature still keeps at least 200 ℃, 300 ℃ or even 400 ℃.
Fig. 8 is the curve chart of temperature for the mass density of institute's deposition substrate.This figure be measure to silicon nitride (SiN) layer and with several g/cm 3The order of magnitude represent its value.Temperature is between 0 and 400 ℃, to change.Result curve shown in these three summaries relates to the sputter process under the different pressures.Say that in more detail lines 610 representative pressure grades are at the high pressure of 10 microbars, the pressure of about 4 microbars of lines 620 representatives, and the pressure of about 2 microbars of lines 630 representatives.
As can be from seeing these results of study, mass density ρ have increased under higher substrate temperature.Except that this substrate quality density p, total layer quality also improved thereupon.
Fig. 9 illustrates the summary profile according to the rotatable target of embodiment.This illustrates cylindric target pipe 121.
Generally speaking, metal that all conductances are enough big and pottery all can receive sputter.Depend on reacting gas, also can form dielectric layer.The layer that is deposited is amorphous or monocrystalline normally.Usually, with regard to metal treatment or from regard to the dielectric layer of ceramic target, use direct current power to carry out sputter.If reaction treatment is then usually used intermediate frequency (MF) power.
Generally speaking, this target tube normally is made of metal, and the typical material that is used for sputter is indium alloy, tin (Sn), zinc (Zn), aluminium (Al), silicon nitride (SiN), copper (Cu), the aluminium oxide (Al of silicon (Si), indium (In), for example indium tin (InSn) 2O 3), zinc oxide (ZnO), copper indium gallium (CIG) or its composition, for example ZnO:Al 2O 3Usually, for example the sedimentary deposit of silicon layer is a crystallizing layer.Generally speaking, metal that all conductances are enough big and pottery all can receive sputter.Depend on reacting gas, also can form dielectric layer, for example hydrogeneous silicon nitride (SiN:H).These layers are amorphous or crystallite normally.
According to some embodiment, this target tube engages with the target arm, and this target arm is represented with element numbers 910 in the embodiment of Fig. 9.This knitting layer is represented with element numbers 920 in Fig. 9.Usually, this grafting material is the indium base.According to some embodiment, select the low material of thermal conductivity as grafting material.Therefore this grafting material can be heat guard, has the thermal conductivity less than 0.3W/mK usually, more typically less than 0.2W/mK or even less than 0.1W/mK.
According to other embodiment, use a kind of disengaged rotatable target to carry out sputter.In this situation, for example, this target tube or be to be linked to target arm (for example using mechanical compression) with disengaged mode, otherwise this rotatable target is the single type pipe of only being made up of the material of desire coating.
According to reference to the embodiment shown in Figure 10, extra layer is set between this target tube 121 and this target arm 910.This layer is represented with element numbers 1010 in Figure 10.For example, this layer can be processed by heat-insulating material.Usually, the thermal conductivity of this additional layer is less than 0.3W/mK, more typically less than 0.2W/mK or even less than 0.1W/mK.
In addition maybe this layer the zone between this target arm of complete filling and this target tube not.For example, this layer can be designed to the clearance wall that some position at least (for example three or four positions) between this target tube and this target arm is located to arrange.Because this target tube is arranged in this depositing device vacuum, so vacuum also is present between this target arm and this target tube, and this embodiment also provides good heat to isolate.
According to an aspect described herein, because this rotatable target keeps the fact of high temperature, it is very hot that this depositing device and environment thereof become.Therefore, according to some embodiment, for this depositing device provides the external refrigeration system.According to some embodiment, this external refrigeration system (not graphic shown in) is and this depositing device links, for example above this target position.This external refrigeration system avoids this depositing device to heat comprehensively.
The application's application allows this substrate temperature can during being coated with, keep high level.This just is coated with thin layer (for example, silicon wafer) is useful especially.In addition, this allows minimizing preheating power, therefore has more economic benefit.This is useful especially in glass or suchlike coating that coating has a high specific heat are used.
Though aforementioned is to the embodiment of the invention, other and further embodiment of the present invention can design not deviating under its base region, and the application's scope is to be defined by claims.
This written description utilization example discloses the present invention, comprises optimal mode, and allows and know art and can make and use the present invention.Though the present invention described according to a plurality of specific embodiments, know art and can understand and to utilize the spirit that drops on claims and the adjustment mode in the category to come embodiment of the present invention.Particularly, but the feature structure combination with one another that the foregoing description is not got rid of mutually.Patentability scope of the present invention is to be defined by claims, and can comprise and know art and send out other example of thinking.This type of other example is intended to be comprised in claims, if these other examples have not the meaning of word various structure assembly with claims, or if these other examples comprise the equivalent structure assembly that does not have essence difference with the meaning of word of claims.

Claims (15)

1. the depositing device of a sputter material on substrate (100), this depositing device comprises:
Substrate retaining piece (110) is in order to this substrate of fixing;
Rotatable target (120) is suitable for being subjected to sputter;
Heating system has:
Dorsal part heating (130) is in order to heat this substrate from dorsal part; And
The front side heating is in order to this substrate of heating from the front side;
Wherein this rotatable target is as this front side heating; And
Wherein the heating of this front side is suitable for this substrate is heated at least 100 ℃ temperature.
2. like each the described depositing device in the above-mentioned claim, said rotatable target comprises target tube (121) and magnetic element (122).
3. like each the described depositing device in the above-mentioned claim, wherein this depositing device also comprises cooling system (124), and this cooling system is set in this rotatable target so that cool off the inside of this target.
4. depositing device as claimed in claim 3, wherein this cooling system is suitable for making this magnetic element to remain below 80 ℃ temperature place.
5. like claim 4 or 5 described depositing devices, more comprise the Control and Feedback loop so that control the cooling system (124) of this rotatable target.
6. like each the described depositing device in the above-mentioned claim, wherein this heating system more comprises the external heat system, and this external heat system is set at this depositing device the place ahead.
7. like each the described depositing device in the above-mentioned claim, this depositing device also has cooling system, and this cooling system and this depositing device link setting.
8. like each the described depositing device in the above-mentioned claim, be suitable on wafer, depositing one deck.
9. like each the described depositing device in the above-mentioned claim, more comprise at least one other rotatable target, this rotatable target heats as the front side with this at least one other rotatable target.
10. the method for deposition one deck deposition materials on the substrate in depositing device, this method comprises:
The fixing substrate:
Make the rotatable target rotation;
Material is splashed on this substrate;
By heat this substrate from the front side, this substrate is heated at least 100 ℃ temperature; And
Use this rotatable target so that from this substrate of front side heating.
11. method as claimed in claim 10 more comprises the inside of cooling off this target.
12., more comprise like claim 10 or 11 described methods
The operation magnetic element, this magnetic element is set in this rotatable target;
This magnetic element remained below 80 ℃ temperature place.
13., more be included in this substrate is fed to and heat this substrate before this depositing device like any one the described method among the claim 10-12.
14. any one the described method as among the claim 10-13 more comprises the step of cooling off this depositing device.
15., be wafer wherein by the substrate of fixing like any one the described method among the claim 10-14.
CN2010800135583A 2009-03-20 2010-03-19 Deposition apparatus with high temperature rotatable target and method of operating thereof Pending CN102356450A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09155752A EP2230325A1 (en) 2009-03-20 2009-03-20 Deposition apparatus with high temperature rotatable target and method of operating thereof
US12/408,409 US20100236920A1 (en) 2009-03-20 2009-03-20 Deposition apparatus with high temperature rotatable target and method of operating thereof
US12/408,409 2009-03-20
EP09155752.0 2009-03-20
PCT/IB2010/000598 WO2010106432A2 (en) 2009-03-20 2010-03-19 Deposition apparatus with high temperature rotatable target and method of operating thereof

Publications (1)

Publication Number Publication Date
CN102356450A true CN102356450A (en) 2012-02-15

Family

ID=42740059

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800135583A Pending CN102356450A (en) 2009-03-20 2010-03-19 Deposition apparatus with high temperature rotatable target and method of operating thereof

Country Status (4)

Country Link
KR (1) KR20110137331A (en)
CN (1) CN102356450A (en)
TW (1) TW201043715A (en)
WO (1) WO2010106432A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104160471A (en) * 2012-03-12 2014-11-19 应用材料公司 Mini rotatable sputter devices for sputter deposition

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108097530B (en) * 2018-01-19 2023-12-29 广西晶联光电材料有限责任公司 Plane target back metallization equipment and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441623A (en) * 1994-01-03 1995-08-15 Industrial Technology Research Institute Sputtering apparatus for making high temperature superconducting oxide films
US5645699A (en) * 1994-09-06 1997-07-08 The Boc Group, Inc. Dual cylindrical target magnetron with multiple anodes
US20020046943A1 (en) * 2000-10-23 2002-04-25 Hiroshi Echizen Sputtering method for forming film and apparatus therefor
US20080258411A1 (en) * 2006-11-30 2008-10-23 Canon Anelva Corporation Power supply apparatus and deposition method using the power supply apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060065524A1 (en) * 2004-09-30 2006-03-30 Richard Newcomb Non-bonded rotatable targets for sputtering
EP1960565A4 (en) * 2005-10-03 2010-06-02 Thermal Conductive Bonding Inc Very long cylindrical sputtering target and method for manufacturing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441623A (en) * 1994-01-03 1995-08-15 Industrial Technology Research Institute Sputtering apparatus for making high temperature superconducting oxide films
US5645699A (en) * 1994-09-06 1997-07-08 The Boc Group, Inc. Dual cylindrical target magnetron with multiple anodes
US20020046943A1 (en) * 2000-10-23 2002-04-25 Hiroshi Echizen Sputtering method for forming film and apparatus therefor
US20080258411A1 (en) * 2006-11-30 2008-10-23 Canon Anelva Corporation Power supply apparatus and deposition method using the power supply apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104160471A (en) * 2012-03-12 2014-11-19 应用材料公司 Mini rotatable sputter devices for sputter deposition
CN104160471B (en) * 2012-03-12 2017-11-28 应用材料公司 Miniature rotary type sputter equipment for sputtering sedimentation

Also Published As

Publication number Publication date
WO2010106432A2 (en) 2010-09-23
TW201043715A (en) 2010-12-16
KR20110137331A (en) 2011-12-22
WO2010106432A3 (en) 2011-02-24

Similar Documents

Publication Publication Date Title
CN103215549B (en) Shielding design for metal gap filling
TW200635113A (en) Deposition of LiCoO2
WO2007067526A3 (en) DEPOSTION OF LiCoO2
TW202002171A (en) Methods of forming metal silicide layers and metal silicide layers formed therefrom
KR20120049554A (en) Rotating cylindrical facing target sputtering system
GB2446331A (en) Method and system to provide targeted advertising with search results
EP2082420B1 (en) Chemical vapor deposition apparatus for equalizing heating temperature
CN102356450A (en) Deposition apparatus with high temperature rotatable target and method of operating thereof
CN110835736A (en) 9-cavity vertical PECVD-PVD integrated silicon wafer coating process
CN103811293A (en) Wafer backside metallization method
US20100236920A1 (en) Deposition apparatus with high temperature rotatable target and method of operating thereof
CN110835744A (en) 9-cavity horizontal PECVD-PVD integrated silicon wafer coating process
CN100513630C (en) Mask film cradle and deposition system
US20110195184A1 (en) Substrate protection device and method
CN110835726A (en) 8-cavity vertical HWCVD-PVD integrated equipment for solar cell manufacturing
CN102292796B (en) Non-condensing thermos chuck
CN112376028A (en) Sn doped Ge2Sb2Te5Thermoelectric film and method for manufacturing the same
CN110835732A (en) 9-cavity horizontal HWCVD-PVD integrated silicon wafer coating process
CN110835735A (en) 8-cavity horizontal HWCVD-PVD integrated silicon wafer coating process
CN110835730A (en) 7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process
EP2230325A1 (en) Deposition apparatus with high temperature rotatable target and method of operating thereof
CN110835734A (en) 8-cavity horizontal PECVD-PVD integrated silicon wafer coating process
JP2014056944A (en) Vacuum processor
CN110835731A (en) 8-cavity vertical PECVD-PVD integrated silicon wafer coating process
JP6484035B2 (en) Thin film forming apparatus, thin film manufacturing method using the same, and organic EL device manufacturing method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120215