TW201043715A - Deposition apparatus with high temperature rotatable target and method of operating thereof - Google Patents

Abstract

A deposition apparatus (100) and a method for sputtering material on a substrate is provided with a substrate holder (110) for holding the substrate, a rotatable target (120) adapted for being sputtered, and a heating system including a back side heating (130) for heating the substrate from the back and a front side heating for heating the substrate from the front. The rotatable target acts as the front side heating and is adapted for heating the substrate to a temperature of at least 100 DEG C.

Description

201043715 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present disclosure relates generally to deposition apparatus and methods of operation thereof. The present disclosure relates to substrate coating technology solutions, involving equipment, processes, and materials for > grading, patterning, and substrate and coating processing, with representative examples including, but not limited to, the following elements Applications: Semiconductor and dielectric materials and devices, germanium-based wafers, flat panel displays (eg TFTs), reticle and filters, energy conversion and storage (eg photovoltaic cells, fuel cells, and batteries), solid state lighting (eg LEDs* 〇LEDs), magnetic and optical storage, microelectromechanical systems (MEMS) and nanomechanical systems (NEMS), low-light and opto-electromechanical systems (〇EMS>, low-light and optoelectronic components, transparent substrates, construction and Automotive glass, metallization systems for metals and polymerizations and packaging, and micro-molding and nano-molding. More specifically (4), it is about sputtering with spin dry Equipment and method of operation. 0 [Prior Art] In many applications, a thin layer must be deposited on a substrate. The term "substrate" as used herein shall include an inelastic substrate such as wafer or glass. a plate, and an elastic substrate, such as a web or a cymbal. For example, the known techniques for depositing layers are evaporation and sputtering. In a steaming process, Heating a material to be deposited to evaporate and then condense on the substrate to form a vacuum coating process for depositing a film of various materials onto a substrate surface. For example, a gold can be deposited by subtraction to form a layer of gold 4 201043715 Or arranging a thin layer. The inert gas ion accelerated by the sputtering voltage is transferred from the dry material composed of the material to the coating to be coated: when: the ion strikes the outer surface of the (four) Momentum transfer (4) material ^ so some of them can obtain enough energy to overcome their " ^ ^ ± open 莰 energy to

The dry material surface is extracted and deposited on the substrate. On the substrate, a desired material film is formed. The thickness of the deposited film depends, inter alia, on the length of time the substrate is exposed to the sputtering process. For example, sputtering is used in the production of thin film solar cells. In general, a thin film solar cell comprises a back contact, an absorbing layer, and a transparent and electrically conductive oxide layer (TC0). Typically, the back contact and the tc layer are produced by sputtering, and the absorber layer is typically fabricated in a chemical vapor deposition process. "Chemical Vapor Deposition' sputtering is also superior to evaporation processes because certain materials are capable of sputtering but cannot evaporate. In addition, the layer produced by the sputtering process is generally more adherent to the substrate than the vapor processing process. Furthermore, sputtering is a directional process whereby most of the material is transferred to the substrate without coating the interior space of the deposition apparatus (as in vapor deposition applications). Despite the advantages of shot reduction, there are disadvantages in sputtering. Compared with evaporation, it takes a long time to shoot a substrate. The sputtering rate is usually much lower than the evaporation rate and it is therefore desirable to speed up the sputtering process. On the other hand, 'except for the preferred adhesion of the sputter layer to the substrate', it is desirable to further improve the quality of the deposited layer. SUMMARY OF THE INVENTION 5 201043715 In view of the above, there is provided a deposition apparatus and method for depositing a layer on a », μ β. ^ burst. According to an aspect, a deposition apparatus for a job material on a substrate is provided. a substrate holder for holding the substrate; a rotatable target adapted to be sputtered; and a heating system including a back side heating for heating the substrate from the back side and a front side heating for The substrate is heated from the front side. The rotatable (four) is used to heat the front side and is adapted to heat the substrate to at least 100 °C. Ο According to another aspect, a method of depositing-depositing a layer of material on a substrate in a deposition apparatus, the method comprising: holding a substrate, rotating-rotatable, and projecting a material on the substrate, using the front side Heating the substrate to at least a loot, and using the rotatable target to heat the substrate from the front side. The front side heating must be adapted to heat the substrate to 10 (the description of rc is understood to mean that the front side heating is adapted to warm the substrate to 1 &> c. 〇 According to another aspect, a substrate is provided a sputtering material deposition apparatus having a substrate holding member for holding the substrate; a rotatable dry 'suitable for firing; and a heating system including a back side heating for heating the substrate from the back side And a front side heating for heating the substrate from the front side. The rotatable target acts to heat the front side and is adapted to increase the substrate temperature by at least a loot: according to another aspect 'providing a a method of depositing a layer of deposition material on a substrate, the method comprising: holding a substrate, rotating a rotatable target, sputtering a material on the substrate, using the front side heating to increase the temperature of the substrate by at least 10 (rc), and using the The rotatable target heats the substrate from the front side. According to an embodiment, the front side heating is adapted to heat the substrate to at least ° C, more typically to at least 30 (rc. According to an embodiment, the front side The heat is adapted to increase the temperature of the substrate by at least 2 〇〇〇c, more typically by at least 300 ° C. 9 Other aspects, details, advantages and features can be easily seen from the accompanying items, embodiments and figures. Embodiments are also directed to performing each of the disclosed methods (4) and include device components that perform each of the described method steps. These method steps can be performed using hardware components, using a computer program suitable for the software, or Any combination of the two or any other manner. In addition, the embodiment is also directed to the method of operation of the described device or the method of manufacturing the device described, which comprises performing the device or manufacturing the device component [embodiment] Ο 纟In the following description of the drawings, the same reference numerals indicate the same components. In general, only the differences of the individual embodiments are described. The process of coating a substrate with the materials described herein is generally referred to as a film application. The term "coating" and "deposition" are used synonymously. The deposition equipment contains - the source of the process. In general, this is a suitable for extinction. Turning dry. As will be discussed in more detail later, the rotatable handle can be a rotatably dry or non-engageable rotatable cymbal. Generally, σ $ can be either a diode or a magnetic & 201043715. Magnetron sputtering is particularly advantageous because of the high rate of gas accumulation. Usually, a magnet is placed in the sloping field, rotating in the dry. By this or A magnet is disposed behind the target, in the case of a rotating cymbal, that is, inside the target, to capture free electrons located in the magnetic field of the generated peak π, which is immediately below the surface, and these electrons are forced to magnetically % moves internally and cannot be detached. This usually increases the probability of ionizing the gas* to know the size of the knives. This in turn increases the deposition rate significantly.

G When the uncoated material is used to heat the front side of the substrate, the temperature of the (four) material is usually controlled so as to be limited by the melting point temperature of the target. In addition, in the case of two or more pieces of the target 'for example, in the case of a dry tube and a backing tube', it must be limited to take into account: different thermal expansion coefficients of the support and the target . In other words, the heating of the illusion does not cause the multi-piece dry material to break due to heating: , :, usually more advanced steps must be considered to prevent:: exceed a certain temperature. According to some embodiments, the front side heating system utilizes a plurality of rotatable stems. That is, the deposition apparatus comprises at least two rotatable targets. ^ Multiple target effects heat the front side of the substrate. Moreover, in accordance with certain embodiments, the heating profile of the substrate can be provided in a plurality of dry steps, for example, one of the rotatable targets is heated to a lower temperature than the other rotatable targets. Usually, it is recognized that the magnet used in the rotatable target is a permanent magnet. The permanent magnet is always V, because it is placed in the target tube and the target

According to one aspect, the system is kept at a high temperature. In operation, this becomes improper [U", because it is wound by the ion-driven rotatable light bulb 8 201043715. The target is heated due to the collision. This target and the cooling of the magnets are often provided. The purpose of this is to maintain the magnet at an appropriate operating temperature. Furthermore, it is generally believed that the optimum deposition temperature is below a certain temperature.

Unexpectedly, the inventors have found that high temperature targets enhance the quality of the deposited substrate when compared to the same application at lower temperatures. Reference in the present disclosure to the mouth is understood to mean, for example, the resistivity (should, depending on the application, a specific value that can be low), such as optical parameters of the absorption spectrum, thickness, density, hardness, Adhesion, scratch resistance, etc. One or more of these properties of the coating need to be set to an expected value, depending on the particular application. In addition, when the value is not in the same or between several coated substrates, the process of bombarding the material from the material is found to be strictly shot. Too much affected by higher temperatures. That is, it has not been found that the sputtering process step of dissolving the material from the material is affected by temperature. Further research has shown that the high temperature dry matter on the substrate produces an effect that results in improved layer deposition. Therefore: It is advantageous to provide heating from the front side of the substrate in accordance with the present invention: to heat the substrate and provide heating from the front side. For the sake of this, a rotatable target is used as the front side heating. But hey, especially in the case of magnetron sputtering iron is kept below the -specific (four) value (four): it should be considered that the magnetic threshold should be about 8 (rr β A τ 祛 & 、, ", target It is feasible to provide thermal isolation between the outer dry material and the interior of the material. The isolation can be the material itself (if it is thermally insulating). It is possible to provide an additional layer between the outer dry material that should be trapped and the dry material tube that carries the outer twisted material. For example, the additional layer may also be a bonding layer that joins the dry material to the target tube. In addition to the front side heating performed by the no-material, backside heating of the substrate is also provided by the back side. The combined heating system ensures that the substrate is maintained at a high temperature. According to aspects of the invention, the front side is heated. Raising the germanium substrate to at least 10 (rc. The quality of the layer deposited at this temperature was found to be better than the layer deposited at lower temperatures. This effect caused the temperature to rise to at least 20 (rc, 30 (rc) on the front side heating Or even at least 4 〇〇. It is stronger when it is. In general, the target There is no clear correlation between the degree and the substrate temperature. There may be embodiments in which the target is heated to, for example, a high temperature, but the substrate is approximately in the range of room temperature. Therefore, according to the present disclosure, it is necessary to ensure The substrate may be at least 1 〇〇 or even hotter due to the effect of the target acting as a front side heating. The disclosure is not directed to the coating of several materials. Specifically, it relates to the coating of glass. It usually has a fairly high heat storage capacity, so once it is heated, for example before entering the deposition chamber, the temperature drop is very mild. However, by providing front side heating, the entire production process becomes more economical because it can be reduced In addition, the positive effect of additional front side heating is effective at lower temperatures compared to wafer coating. Specifically, when coating the glass, the temperature rise caused by the front side heating is usually at least 150. °c or 200 ° C. This disclosure is also generally related to wafer coating. The heat storage capacity of the wafer is usually very low at 10 201043715. Therefore, in the prior art, M ^^ right is entering Before the chamber is preheated, the decrease in the _ to the inside of the deposition chamber is considerable. Therefore, by applying the present disclosure, it is clear that the wafer can be supplied by the Brother & Heated to the front side of at least 1 〇〇 °c for heating, the chamber/stock to 0 temperature can be maintained in the high temperature chamber. The wafer is often heated to a high temperature. - In other words, the front side heating can heat the wafer to At least 250 ° C, 300. "+ Gan r β c or even 疋 400. (: temperature.

In many embodiments of coated wafers, for example, between 3 and 5 (10). The higher temperatures between c or even 550 c cause a particularly noticeable improvement in quality. <Columns&' This can occur when the wafer i coats the nitride layer. Usually the thickness of the deposited layer is less than! Millimeters, more commonly less than 1 micron, and even more typically less than 1 nanometer. Figure 1 shows a schematic plan view of one embodiment of a deposition apparatus as described herein. The deposition apparatus 100 includes a substrate holder 110 for holding a substrate to be coated. It further includes a rotatable target 120 that is adapted to be sputtered. The arrow shown in Figure 1 emphasizes that the target is continuously rotating during operation. The rotatable target acts to heat the front side of the substrate. In addition, the substrate is also heated from the back side. To this end, a back side heating of 13 提供 is provided. Typically, the rotatable target comprises a target tube, which is indicated by element reference numeral 121 in Figure 2 . Moreover, in accordance with embodiments described herein, the rotatable stem comprises a magnetic element. In Fig. 2, the magnetic element is denoted by reference numeral 122. Usually, the magnetic member is disposed on the lower side of the inside of the material. In this case, so-called sputtering-down is performed in which the target is disposed above the substrate. In the so-called sputter-up process, the target is placed under the substrate. 11 201043715 More generally, it is placed on the upper side of the dry material. The coating of the magnetic member is disposed on the side of the dry material that is closer to the substrate. The rotatable dry is generally cylindrical. According to the embodiment, at least one of the eight magnetic secrets - Α is based on the magnetic surface of the knives - the surface of the knives - which is annular in its cross section. This is also unrealized in the 2nd and 3rd - ^ ^ ^, wherein the lower side surface portion of the magnetic member is conformal to the rotatable dry shape. In Figure 2, the conformal surface portion of the magnetic element 122 can be seen.

The distance d from the dry ^ 121. According to an exemplary embodiment, the distance is less than 5 mm, more typically less than 3 mm, and even more typically less than 2 mm. Due to the short distance, the magnetic effect of the magnetic element can be fully exerted. In addition, it avoids the narrowness between the wire tube and the magnetic element. The coolant flowing around the magnetic element effectively cools the (4) official. This is because the rotatable dry has a high operating temperature (see the rear for details), and the magnetic element The temperature is limited by the operating threshold temperature above which the magnet is no longer functioning. As described herein, the tray 1 is heated to a height of one. In general, it is also desirable to keep the magnetic component below the operating threshold temperature. By shrinking and smalling the space between the magnetic element and the sister material, the cold portion of the portion of the (four) material tube will not function because of the small gap through which the coolant flow must flow. Therefore, the target will only cool slightly. This effect can be enhanced by providing the target tube isolation material' which will be discussed in more detail later. Figure 3 shows another embodiment of the rotatable target. In addition to the eight elements shown in Fig. 2, Fig. 3 further includes the inner tube ^23. Typically, the inner tube is adapted to hold the magnetic element. Both the inner tube and the magnetic element are in a state of static 12 201043715 and the target tube is generally adapted for rotation. According to some embodiments, the inner tube is mated with an interface. In Fig. 3, the interface is indicated by element symbol 125. Typically, the upper side of the interface is connected to the inner tube and the lower side is connected to the magnetic element. In many embodiments the inner tube is filled with air. The remaining space between the inner tube and the target tube can be filled with a coolant to cool the magnetic element. This space is indicated by element symbol 124 in Fig. 3. The choice of coolant depends on the temperature inside the target tube. Usually, it is cooled with oil or water. Typically the temperature within the target tube is between 40. (: and 80 ^ °c. The target tube is filled with a coolant to provide a cooling system disposed inside the rotatable target. The cooling system acts to cool the internal space of the target. Most importantly; %' Cold; gp the magnetic element. The cooling system according to the embodiments described herein must be adapted to maintain the magnetic element at a temperature below the operating temperature limit of the magnetic element. On the other hand, it must be adapted to be as low as possible. The rotatable target is cooled such that the rotatable target can still perform front side heating of the crucible substrate. According to a general embodiment, a control feedback loop is provided that controls the cooling elements of the rotatable target. Typically, the control feedback loop includes A substrate temperature measurement and control device, such as a metering valve, to supply a cooling fluid. Alternatively or in addition to the target temperature measurement, a substrate temperature measurement can be provided. For example, the substrate temperature may be often controlled at or greater than a predetermined temperature. The minimum temperature depends on the temperature measurement gentleman to adjust the temperature of the cooling fluid, that is, if the substrate is too cold, the temperature rises, if the substrate temperature is too Then, the temperature is lowered. Typically, water is used as the cooling fluid. Fig. 4 schematically shows an embodiment of the deposition apparatus as described herein. 13 201043715 Compared with the characteristic structure already shown in the embodiment of Fig. 1, Fig. 4 Embodiments further include a slit 410. The slit acts to allow the substrate to enter the deposition apparatus and feed it out of the deposition apparatus after coating. This embodiment further illustrates a transfer portion 420, such as adapted to move the substrate holder ιι The roller of the crucible, for example, to the right side of the deposition apparatus receives a new substrate through the slit 41. Further, the deposition apparatus includes an outlet 43〇 for coupling with a vacuum pump. In other embodiments, the symbol 43 indicates At least one vacuum pump disposed directly on the deposition apparatus. Further, the apparatus includes a population of 44 G for lasing gas. Typically, the helium gas system is supplied with inert gas into the deposition apparatus during operation. In a typical embodiment, the sputtering gas is argon. The sputtering gas system is ionized using electrons and then captured toward the target to dissolve the target material from the target. Typically within the deposition apparatus The gas pressure system is between 1 〇 2 mbar and 丨〇 4 mbar. The gas introduced into the deposition apparatus may further comprise an element joined to the target material. For example, by providing a block 矽As a target, a nitrogen nitride layer is then formed by introducing nitrogen gas into the apparatus. Further, in the case of obtaining a layer containing hydrogen oxynitride, a small amount of ammonia (NH3) or hydrogen is added in addition to nitrogen ( HO » This is advantageous for layer quality from the viewpoint of passivation properties. Fig. 5 is a schematic graph showing the temperature of the substrate to be coated with respect to time. It is necessary to compare Figures 5 to 7 to understand the embodiments described herein. Advantages. Figure 5 depicts the time-temperature relationship of a deposition process in the art in which the substrate to be coated is heated to a high temperature referred to herein as Tmax. Typically, 201043715 the substrate is from both sides before entering the deposition apparatus. Heating, so the temperature at the time of entering the deposition apparatus or the processing zone is Tmax. At time A, the substrate enters the slab and is exposed to a very high temperature because there is no front side heating in the deposition apparatus. Therefore, between times A and b, the substrate is coated at a reduced temperature which is rapidly becoming much lower than the temperature Ttnax. Usually 'this temperature (e.g., at time B) is about 3 〇〇»c. Once the substrate has been coated, it is taken out of the deposition apparatus for cooling, which is shown in the curve after time B. The temperature dip after time a is due to the absence of front side heating in the deposition apparatus, but may only have back side heating. Therefore, the total heating capacity in the deposition apparatus is not high enough to maintain the substrate at a high temperature. Figure 6 illustrates the time-temperature relationship of the deposition process in accordance with the embodiments described herein. Usually the temperature trend shown is measured on a wafer as a substrate. As previously mentioned, in accordance with certain embodiments, the substrate is heated to a preheat temperature Tmax prior to entering the deposition apparatus. According to an exemplary embodiment, 温度 the temperature Tmax is at least 300 ° C level 'more typically at least 400 ° C, even more typically 450 ° C or even 5 00. €. However, according to the present disclosure, it is possible to reduce the warm-up compared to the conventional preheating because it is expected that there will not be much temperature drop in the deposition apparatus. Thus, according to certain embodiments, the preheating temperature Tmax is at most 500 ° C' more typically at most 450 ° C, and even more typically up to 400 ° C. By reducing the preheating power, the total power consumption can be reduced' resulting in less expensive coating production. In other embodiments, particularly if the sputter material is TCO, the preheat temperature is up to 400 °C, more typically up to 350 °C, or even more typically up to 300 °C. 15 201043715 The substrate is then fed to the deposition apparatus comprising a heating system having backside heating to heat the back side of the substrate and a front side heating to heat the front side of the substrate. Therefore, it is possible to maintain the substrate temperature at a high level. According to the embodiment shown in Fig. 6, the temperature is maintained at a temperature as described in relation to Fig. 5, and the substrate is applied during the time-in and the enthalpy. Thus, in accordance with the embodiments described herein, at least one of the following effects can be utilized: first, the temperature of the crucible is reduced less during the coating process than the absolute value of the temperature. For example, the decrease can be less than 20 of Tmax. /. Or even less than 10%. According to some embodiments, it remains fixed at this temperature, wherein "fixed" in this context generally means the maximum deviation of 5 〇 / 。. The second 'the absolute temperature of the substrate is at a high level. According to one aspect, the temperature is at least loot. According to yet another embodiment, the substrate temperature is maintained at at least 200 °C, more typically at least 300. (: or even 400 ° C. The high temperature of the substrate improves the layer quality. Figure 7 shows another deposition embodiment as described herein. As in the 6th embodiment, disposed in the deposition apparatus The heating system is adapted to maintain the substrate at a high temperature. However, contrary to the embodiment illustrated with reference to Figure 6, this temperature is less than the original preheating temperature Tmax. Therefore, once the substrate enters the deposition apparatus at time A, The substrate temperature will decrease slightly as shown in Figure 7. In some examples, the reduction is at most 15% of the temperature Tmax, typically a maximum of 1% or even 5%, in any case, The reduction must be consistent with the substrate temperature during the deposition process remaining at least 100. (The condition of the layer is improved, therefore, the quality of the layer is improved compared to the deposition technique of the art. In the exemplary embodiment, the temperature of the substrate 16 201043715 remains at least 200 ° C, 300. (: or even 40 (TC. Figure 8 is a plot of temperature versus mass density of the deposited substrate. It is a layer of tantalum nitride (SiN) measured and expressed in the order of g/cm3 Its value. The variation between 〇 and 400 ° C. The results of the three summaries show the sputtering process for different pressures. In more detail, line 610 represents the high pressure of the pressure level of 1 〇 microbar, and the line 62 〇 represents 4 microbar pressure, while line 630 represents a pressure of about 2 microbars. As can be seen from these results, the mass density 〇 increases at higher substrate temperatures. In addition to the substrate mass density ρ, the total layer quality Figure 9 is a schematic cross-sectional view of a rotatable target according to an embodiment, showing a cylindrical dry material tube 121. Generally, all metals and ceramics having sufficient conductivity can be splashed. A dielectric layer can be formed. The deposited layer is incident. Depending on the reaction gas, it is usually amorphous or single crystal. Usually, in the case of a metal process or a dielectric layer from a ceramic material, DC power is used for sputtering. In the case of a reaction process, intermediate frequency (MF) power is conventionally used. In general, the target tube is usually made of metal, and the typical material is bismuth (Si), indium (in), such as indium tin (InSn). Indium alloy,

Shoot. Depending on the reaction gas, a dielectric layer can also be formed, and a layer of a crystal layer can be splashed, for example, containing hydrogen nitriding 17 201043715 矽 (SiN:H). The layers are typically amorphous or microcrystalline. According to some embodiments, the target tube is joined to a target branch, which is indicated by the symbol 910 in the Figure 9 embodiment. The bonding layer is indicated by the symbol 920 in Fig. 9. Usually the joining material is steel. A material having a low thermal conductivity is selected as a bonding material according to some embodiments. The bonding material may thus be a thermal insulator, typically having a thermal conductivity of less than W 3 W/mK, more typically less than 22 W/inK or even less than 〇 i W/mK. ® is fired according to other embodiments using a non-joining rotatable target. In this case, for example, if the target tube is not joined to a target branch in a non-engaged manner, for example, mechanical pressure is applied, i.e., the rotatable handle is a one-piece tube composed only of the material to be coated. According to the embodiment illustrated with reference to Fig. 10, an additional layer is disposed between the target tube 121 and the target branch 910. This layer is represented by the symbol 1 〇 1 〇 in the first diagram. For example, this layer can be made of a heat insulating material. Typically the thermal conductivity of the additional layer is less than 0.3 W/mK, more typically less than 0.2 W/mK or even less than οι/mK. It is further possible that this layer does not completely fill the area between the target branch and the target tube. For example, it may be designed as a spacer, such as three or four locations, disposed at the target tube and at certain locations of the target member. Since the target tube is located in the vacuum of the deposition apparatus, vacuum is also present between the dry material branch and the target tube. This embodiment also provides good thermal isolation. Due to the fact that the rotatable dryness maintains a high temperature, the deposition apparatus and its ring 18 201043715 become very hot 'according to one of the aspects described herein. Thus, the deposition apparatus is provided with an external cooling system in accordance with certain embodiments. According to certain embodiments, the external cooling system (not shown in the drawings) is coupled to the deposition apparatus, such as above the target location. The external "4" system prevents the deposition equipment from being fully heated. The application of the present disclosure allows the substrate temperature to be maintained at a high level during coating. This is particularly useful for coating thin layers (eg, 'Shi Xi Wa Wa). of.

In addition, it allows for a reduction in preheating power and is therefore more economical. This is particularly useful in coating applications that have high specific heat of glass or the like. While the foregoing is directed to embodiments of the present invention, other and further embodiments of the present invention can be devised without departing from the basic scope thereof. This written description uses examples to disclose the invention, including the best mode Although the present invention has been described in terms of various specific embodiments, it will be understood by those skilled in the art that In particular, the features of the above embodiments which are not mutually exclusive can be combined with each other. The patentable scope of the invention is intended to be limited by the scope of Such other examples are intended to be included in the scope of the patent application, if they have structural elements that do not differ from the meaning of the claims, or if they contain equivalent structural elements that are not substantially different from the meaning of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Some of the inventive aspects indicated in other more detailed aspects of the present invention are described in the embodiments, and the parts are illustrated with reference to the drawings. Wherein: Figure 1 is a schematic cross-section of a deposition apparatus according to embodiments described herein, and Figure 2 is a schematic cross-section of a rotatable stem according to embodiments described herein.

Figure 3 is a schematic, cross-sectional view of a rotatable profile according to embodiments described herein, and Figure 4 is a schematic cross-sectional view of a deposition apparatus according to embodiments described herein, a temperature profile; a temperature between the temperature profiles Figure 5 of the curve depicts the summary time of a deposition process - Figure 6 depicts the outline of another deposition process, Figure 7 depicts the outline of another deposition process, and Figure 8 depicts the layer density. Temperature-mass density profile dependent on deposition temperature; Figure 9 is a schematic cross-sectional view of a rotatable target according to embodiments described herein; and a first diagram is rotatable according to embodiments described herein A schematic cross-sectional view of the target. [Main component symbol description] 100 Deposition equipment 201043715 Substrate holder Rotatable target Target tube Magnetic element Inner tube Space Interface ❹ Back side heating slit Transmission part Exit inlet Target branch Joint layer Insulation layer

Claims (1)

201043715 VII. Patent application scope: a deposition device for spraying a material on a substrate, the deposition device comprising at least: - a substrate holder for holding the substrate; a rotatable target adapted to be sputtered; a heating system, Having: boiled side heating for heating the substrate from the back side; and Ο-front side heating for heating the substrate from the front side; wherein the rotatable dry is used as the front side heating; and/, the lead side heating is adapted The substrate is heated to a temperature of at least one. 2. A deposition apparatus as claimed in the scope of the patent application, having a dry tube and a m-piece rotatable dry. 3. The method of claim 1, wherein the first heating means is adapted to heat the deposition apparatus of the substrate, wherein the front side is at least 200. (: 妁 temperature. 4. The heating system according to claim 1 is suitable for heating the substrate to a deposition apparatus, wherein the front side has a temperature of 30 〇 ° C. 5. Patent Application No. 1 or 2 The deposition apparatus further includes a deposition system according to any one of the cooling items, disposed in the rotatable light 22 201043715 'to cool the interior of the dry. 6 · As claimed in claim 5 A deposition apparatus, wherein the cooling system is adapted to maintain the magnetic element at a temperature below 80. (7: 7. The deposition apparatus of claim 5, further comprising a control feedback loop A cooling system for controlling the rotatable target. 〇8. The deposition apparatus of any one of claims 3, wherein the heating system further comprises an external heating system disposed in the deposition The apparatus described above is provided with a rotatable target and the apparatus of claim 1 or 2, further comprising at least one additional rotatable target, the additional one being a rotatable target The front side is heated. The π π deposition deposition system is connected with the 哕h stove L ~ item % product. 10. As claimed in the patent scope, the deposition equipment has more - set "1 1 , a 丄 _ He Ke deposition damage a substrate holder 'for holding the substrate; ^ comprising: a rotatable target adapted to be sputtered; and a heating system comprising a priming side heating and - I side heating, the back 23 201043715 and The front side is heated to heat from the front side to heat the substrate from the back side to heat the substrate; to heat the front side and to warm the substrate wherein the rotatable target is increased by at least 10 Torr. 12. If the scope of the patent application is further included in a cooling system, the interior of the dry. The deposition apparatus of claim 11, wherein the deposition device is disposed in the rotatable target for cooling the deposition apparatus of claim 12, wherein the cooling system is adapted to keep the magnetic element at "low" 980. . Under the temperature. 14. The deposition apparatus of any one of claims or 12, which is adapted to deposit a layer on a wafer. G 15. A method of depositing a layer of deposition material on a substrate in a deposition apparatus, the method comprising: holding a substrate: rotating a rotatable target; sputtering a material on the substrate; heating the substrate from the front side The substrate heats the substrate to at least one turn. a temperature of 匸; and heating the substrate from the front side using the target. 24 201043715 16 The method of claim 15, wherein the method is heated to a temperature of at least 200 °C. Wherein the substrate system is heated to a temperature of at least 300X: as described in claim 15 of the patent application. The method of any one of the above-mentioned items of the present invention is further comprising cooling the interior of the dry body. 19. The method of any of the preceding claims, wherein the magnetic element is disposed within the rotatable dry mass to maintain the magnetic element at a temperature below 80 〇c. The method of any of clauses 15 or 16, further comprising heating the substrate before providing the substrate to the deposition apparatus. 21. The method of any of clauses 15 or 16 further comprising the step of cooling the deposition apparatus. The method of any one of clauses 15 or 16, wherein the substrate to be held is a wafer. 25 201043715 23. A method of depositing a layer of deposition material on a substrate in a deposition apparatus, the method comprising: holding the substrate: rotating a rotatable target; sputtering a material on the substrate; heating the front side Increasing the temperature of the substrate by at least 100 〇c; and heating the substrate from the front side using the tampering. The method of the present invention further comprises cooling the interior of the invention as in the 23rd of the patent application. The method described in the item, 25. If any of the scope of claim 23 or 24 is included - more One below 8 (TC temperature. Operating a magnetic component, keeping the magnetic component below 8 〇 26