WO2010106432A3 - Deposition apparatus with high temperature rotatable target and method of operating thereof - Google Patents

Deposition apparatus with high temperature rotatable target and method of operating thereof Download PDF

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Publication number
WO2010106432A3
WO2010106432A3 PCT/IB2010/000598 IB2010000598W WO2010106432A3 WO 2010106432 A3 WO2010106432 A3 WO 2010106432A3 IB 2010000598 W IB2010000598 W IB 2010000598W WO 2010106432 A3 WO2010106432 A3 WO 2010106432A3
Authority
WO
WIPO (PCT)
Prior art keywords
deposition apparatus
rotatable target
substrate
heating
operating
Prior art date
Application number
PCT/IB2010/000598
Other languages
French (fr)
Other versions
WO2010106432A2 (en
Inventor
Joachim Mueller
Roland Trassl
Jian Liu
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/408,409 external-priority patent/US20100236920A1/en
Priority claimed from EP09155752A external-priority patent/EP2230325A1/en
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN2010800135583A priority Critical patent/CN102356450A/en
Publication of WO2010106432A2 publication Critical patent/WO2010106432A2/en
Publication of WO2010106432A3 publication Critical patent/WO2010106432A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3421—Cathode assembly for sputtering apparatus, e.g. Target using heated targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A deposition apparatus (100) and a method for sputtering material on a substrate is provided with a substrate holder (110) for holding the substrate, a rotatable target (120) adapted for being sputtered, and a heating system including a back side heating (130) for heating the substrate from the back and a front side heating for heating the substrate from the front. The rotatable target acts as the front side heating and is adapted for heating the substrate to a temperature of at least 100°C.
PCT/IB2010/000598 2009-03-20 2010-03-19 Deposition apparatus with high temperature rotatable target and method of operating thereof WO2010106432A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800135583A CN102356450A (en) 2009-03-20 2010-03-19 Deposition apparatus with high temperature rotatable target and method of operating thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/408,409 2009-03-20
US12/408,409 US20100236920A1 (en) 2009-03-20 2009-03-20 Deposition apparatus with high temperature rotatable target and method of operating thereof
EP09155752A EP2230325A1 (en) 2009-03-20 2009-03-20 Deposition apparatus with high temperature rotatable target and method of operating thereof
EP09155752.0 2009-03-20

Publications (2)

Publication Number Publication Date
WO2010106432A2 WO2010106432A2 (en) 2010-09-23
WO2010106432A3 true WO2010106432A3 (en) 2011-02-24

Family

ID=42740059

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2010/000598 WO2010106432A2 (en) 2009-03-20 2010-03-19 Deposition apparatus with high temperature rotatable target and method of operating thereof

Country Status (4)

Country Link
KR (1) KR20110137331A (en)
CN (1) CN102356450A (en)
TW (1) TW201043715A (en)
WO (1) WO2010106432A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101780466B1 (en) * 2012-03-12 2017-09-21 어플라이드 머티어리얼스, 인코포레이티드 Mini rotatable sputter devices for sputter deposition
CN108097530B (en) * 2018-01-19 2023-12-29 广西晶联光电材料有限责任公司 Plane target back metallization equipment and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060065524A1 (en) * 2004-09-30 2006-03-30 Richard Newcomb Non-bonded rotatable targets for sputtering
US20070074969A1 (en) * 2005-10-03 2007-04-05 Simpson Wayne R Very long cylindrical sputtering target and method for manufacturing
US20080258411A1 (en) * 2006-11-30 2008-10-23 Canon Anelva Corporation Power supply apparatus and deposition method using the power supply apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441623A (en) * 1994-01-03 1995-08-15 Industrial Technology Research Institute Sputtering apparatus for making high temperature superconducting oxide films
ZA956811B (en) * 1994-09-06 1996-05-14 Boc Group Inc Dual cylindrical target magnetron with multiple anodes
JP4630443B2 (en) * 2000-10-23 2011-02-09 キヤノン株式会社 Film formation method by sputtering

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060065524A1 (en) * 2004-09-30 2006-03-30 Richard Newcomb Non-bonded rotatable targets for sputtering
US20070074969A1 (en) * 2005-10-03 2007-04-05 Simpson Wayne R Very long cylindrical sputtering target and method for manufacturing
US20080258411A1 (en) * 2006-11-30 2008-10-23 Canon Anelva Corporation Power supply apparatus and deposition method using the power supply apparatus

Also Published As

Publication number Publication date
WO2010106432A2 (en) 2010-09-23
CN102356450A (en) 2012-02-15
TW201043715A (en) 2010-12-16
KR20110137331A (en) 2011-12-22

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