CN102349161B - 接收辐射的半导体器件和光电子部件 - Google Patents

接收辐射的半导体器件和光电子部件 Download PDF

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Publication number
CN102349161B
CN102349161B CN201080011562.6A CN201080011562A CN102349161B CN 102349161 B CN102349161 B CN 102349161B CN 201080011562 A CN201080011562 A CN 201080011562A CN 102349161 B CN102349161 B CN 102349161B
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China
Prior art keywords
radiation
filter layer
semiconductor component
receiving
receiving semiconductor
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CN201080011562.6A
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Chinese (zh)
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CN102349161A (zh
Inventor
克里斯蒂安·穆勒
维尔纳·库尔曼
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
CN201080011562.6A 2009-03-12 2010-03-10 接收辐射的半导体器件和光电子部件 Active CN102349161B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009012755A DE102009012755A1 (de) 2009-03-12 2009-03-12 Strahlungsempfangendes Halbleiterbauelement und optoelektrisches Bauteil
DE102009012755.0 2009-03-12
PCT/EP2010/053046 WO2010103047A1 (de) 2009-03-12 2010-03-10 Strahlungsempfangendes halbleiterbauelement und optoelektronisches bauteil

Publications (2)

Publication Number Publication Date
CN102349161A CN102349161A (zh) 2012-02-08
CN102349161B true CN102349161B (zh) 2014-04-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080011562.6A Active CN102349161B (zh) 2009-03-12 2010-03-10 接收辐射的半导体器件和光电子部件

Country Status (7)

Country Link
US (1) US8610225B2 (https=)
EP (1) EP2406828B1 (https=)
JP (1) JP5670360B2 (https=)
KR (1) KR101705918B1 (https=)
CN (1) CN102349161B (https=)
DE (1) DE102009012755A1 (https=)
WO (1) WO2010103047A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8089095B2 (en) * 2008-10-15 2012-01-03 Semiconductor Components Industries, Llc Two terminal multi-channel ESD device and method therefor
CN103151362B (zh) * 2011-12-07 2016-03-23 原相科技股份有限公司 晶圆级图像芯片封装及包含所述封装的光学结构
DE102013101001B4 (de) 2013-01-31 2020-10-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Strahlungssensor
JP2017084875A (ja) * 2015-10-23 2017-05-18 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
KR102844020B1 (ko) * 2015-11-30 2025-08-11 제이에스알 가부시키가이샤 광학 필터, 환경 광 센서 및 센서 모듈
JP6780845B6 (ja) * 2016-08-05 2020-12-09 サンテック株式会社 検出装置
DE112021001772T5 (de) 2020-03-24 2023-01-12 Ams-Osram International Gmbh Optoelektronische vorrichtung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050041292A1 (en) * 2002-05-21 2005-02-24 Wheatley John A. Visible wavelength detector systems and filters therefor
US20070108545A1 (en) * 2005-11-17 2007-05-17 Chua Janet B Y Infrared-blocking encapsulant with organometallic colloids

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US3996461A (en) * 1975-03-31 1976-12-07 Texas Instruments Incorporated Silicon photosensor with optical thin film filter
DE2637616A1 (de) 1976-08-20 1978-02-23 Siemens Ag Filter fuer fotodetektoren
DE2646424A1 (de) 1976-10-14 1978-04-20 Siemens Ag Filter fuer fotodetektoren
JPS56165369A (en) 1980-05-23 1981-12-18 Minolta Camera Co Ltd Semiconductor photoelectric converting element
JPS61113287A (ja) 1984-11-08 1986-05-31 Sharp Corp 光検出素子
US5051804A (en) * 1989-12-01 1991-09-24 The United States Of America As Represented By The United States Department Of Energy Photodetector having high speed and sensitivity
JPH0449676A (ja) 1990-06-18 1992-02-19 Sharp Corp 半導体可視光センサ
US5149956A (en) * 1991-06-12 1992-09-22 Santa Barbara Research Center Two-color radiation detector array and methods of fabricating same
US20020043613A1 (en) 2000-09-12 2002-04-18 Nobuaki Suzuki Illuminance sensor chip and illuminance sensor incorporating the same
DE10101457A1 (de) 2001-01-10 2002-07-18 Infineon Technologies Ag Optoelektronisches System zur Detektion elektromagnetischer Strahlung
JP2002324910A (ja) * 2001-04-25 2002-11-08 Toshiba Corp 光半導体装置
JP4105440B2 (ja) 2002-01-30 2008-06-25 浜松ホトニクス株式会社 半導体光検出装置
JP2004006694A (ja) * 2002-03-29 2004-01-08 Toshiba Corp 受光素子及び光半導体装置
CN1735973A (zh) * 2003-01-20 2006-02-15 夏普株式会社 用于光学传感器滤波器的透明树脂组合物、光学传感器及其制造方法
KR20060008871A (ko) 2003-04-08 2006-01-27 쓰리엠 이노베이티브 프로퍼티즈 컴파니 가시 파장 검출기 시스템 및 그를 위한 필터
JP2005079494A (ja) * 2003-09-03 2005-03-24 Moririka:Kk 視感度補正された受光素子
US7361943B2 (en) * 2005-04-19 2008-04-22 The Ohio State University Silicon-based backward diodes for zero-biased square law detection and detector arrays of same
JP2006301489A (ja) * 2005-04-25 2006-11-02 Nidec Copal Corp 近赤外線カットフィルタ
JP4432837B2 (ja) * 2005-06-13 2010-03-17 ミツミ電機株式会社 半導体光センサ装置
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DE102005060603A1 (de) 2005-12-17 2007-06-21 Bayerische Motoren Werke Ag Vorrichtung zur Ermittlung der Helligkeit der Umgebung eines Kraftfahrzeugs
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US20050041292A1 (en) * 2002-05-21 2005-02-24 Wheatley John A. Visible wavelength detector systems and filters therefor
US20070108545A1 (en) * 2005-11-17 2007-05-17 Chua Janet B Y Infrared-blocking encapsulant with organometallic colloids

Also Published As

Publication number Publication date
US20120007202A1 (en) 2012-01-12
DE102009012755A1 (de) 2010-09-16
WO2010103047A1 (de) 2010-09-16
JP5670360B2 (ja) 2015-02-18
KR20120001751A (ko) 2012-01-04
EP2406828A1 (de) 2012-01-18
JP2012520559A (ja) 2012-09-06
CN102349161A (zh) 2012-02-08
KR101705918B1 (ko) 2017-02-10
US8610225B2 (en) 2013-12-17
EP2406828B1 (de) 2019-07-10

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