DE102009012755A1 - Strahlungsempfangendes Halbleiterbauelement und optoelektrisches Bauteil - Google Patents
Strahlungsempfangendes Halbleiterbauelement und optoelektrisches Bauteil Download PDFInfo
- Publication number
- DE102009012755A1 DE102009012755A1 DE102009012755A DE102009012755A DE102009012755A1 DE 102009012755 A1 DE102009012755 A1 DE 102009012755A1 DE 102009012755 A DE102009012755 A DE 102009012755A DE 102009012755 A DE102009012755 A DE 102009012755A DE 102009012755 A1 DE102009012755 A1 DE 102009012755A1
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- filter layer
- entrance surface
- potting
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 143
- 230000005855 radiation Effects 0.000 claims abstract description 62
- 238000004382 potting Methods 0.000 claims abstract description 51
- 238000010521 absorption reaction Methods 0.000 claims abstract description 37
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 29
- 239000011358 absorbing material Substances 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000003989 dielectric material Substances 0.000 claims abstract description 8
- 230000005693 optoelectronics Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 230000003595 spectral effect Effects 0.000 description 8
- NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Chemical group 0.000 description 1
- 239000010980 sapphire Chemical group 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009012755A DE102009012755A1 (de) | 2009-03-12 | 2009-03-12 | Strahlungsempfangendes Halbleiterbauelement und optoelektrisches Bauteil |
| JP2011553446A JP5670360B2 (ja) | 2009-03-12 | 2010-03-10 | 半導体受光素子及びオプトエレクトロニクス装置 |
| EP10707060.9A EP2406828B1 (de) | 2009-03-12 | 2010-03-10 | Strahlungsempfangendes halbleiterbauelement und optoelektronisches bauteil |
| PCT/EP2010/053046 WO2010103047A1 (de) | 2009-03-12 | 2010-03-10 | Strahlungsempfangendes halbleiterbauelement und optoelektronisches bauteil |
| CN201080011562.6A CN102349161B (zh) | 2009-03-12 | 2010-03-10 | 接收辐射的半导体器件和光电子部件 |
| KR1020117023725A KR101705918B1 (ko) | 2009-03-12 | 2010-03-10 | 복사 수신 반도체 소자 및 광전 장치 |
| US13/254,366 US8610225B2 (en) | 2009-03-12 | 2010-03-10 | Radiation-receiving semiconductor component and optoelectronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009012755A DE102009012755A1 (de) | 2009-03-12 | 2009-03-12 | Strahlungsempfangendes Halbleiterbauelement und optoelektrisches Bauteil |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102009012755A1 true DE102009012755A1 (de) | 2010-09-16 |
Family
ID=42173866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102009012755A Ceased DE102009012755A1 (de) | 2009-03-12 | 2009-03-12 | Strahlungsempfangendes Halbleiterbauelement und optoelektrisches Bauteil |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8610225B2 (https=) |
| EP (1) | EP2406828B1 (https=) |
| JP (1) | JP5670360B2 (https=) |
| KR (1) | KR101705918B1 (https=) |
| CN (1) | CN102349161B (https=) |
| DE (1) | DE102009012755A1 (https=) |
| WO (1) | WO2010103047A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013101001A1 (de) | 2013-01-31 | 2014-07-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Strahlungssensor |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8089095B2 (en) * | 2008-10-15 | 2012-01-03 | Semiconductor Components Industries, Llc | Two terminal multi-channel ESD device and method therefor |
| CN103151362B (zh) * | 2011-12-07 | 2016-03-23 | 原相科技股份有限公司 | 晶圆级图像芯片封装及包含所述封装的光学结构 |
| JP2017084875A (ja) * | 2015-10-23 | 2017-05-18 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
| KR102844020B1 (ko) * | 2015-11-30 | 2025-08-11 | 제이에스알 가부시키가이샤 | 광학 필터, 환경 광 센서 및 센서 모듈 |
| JP6780845B6 (ja) * | 2016-08-05 | 2020-12-09 | サンテック株式会社 | 検出装置 |
| DE112021001772T5 (de) | 2020-03-24 | 2023-01-12 | Ams-Osram International Gmbh | Optoelektronische vorrichtung |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3996461A (en) * | 1975-03-31 | 1976-12-07 | Texas Instruments Incorporated | Silicon photosensor with optical thin film filter |
| DE2637616A1 (de) | 1976-08-20 | 1978-02-23 | Siemens Ag | Filter fuer fotodetektoren |
| DE2646424A1 (de) | 1976-10-14 | 1978-04-20 | Siemens Ag | Filter fuer fotodetektoren |
| JPS56165369A (en) | 1980-05-23 | 1981-12-18 | Minolta Camera Co Ltd | Semiconductor photoelectric converting element |
| JPS61113287A (ja) | 1984-11-08 | 1986-05-31 | Sharp Corp | 光検出素子 |
| US5051804A (en) * | 1989-12-01 | 1991-09-24 | The United States Of America As Represented By The United States Department Of Energy | Photodetector having high speed and sensitivity |
| JPH0449676A (ja) | 1990-06-18 | 1992-02-19 | Sharp Corp | 半導体可視光センサ |
| US5149956A (en) * | 1991-06-12 | 1992-09-22 | Santa Barbara Research Center | Two-color radiation detector array and methods of fabricating same |
| US20020043613A1 (en) | 2000-09-12 | 2002-04-18 | Nobuaki Suzuki | Illuminance sensor chip and illuminance sensor incorporating the same |
| DE10101457A1 (de) | 2001-01-10 | 2002-07-18 | Infineon Technologies Ag | Optoelektronisches System zur Detektion elektromagnetischer Strahlung |
| JP2002324910A (ja) * | 2001-04-25 | 2002-11-08 | Toshiba Corp | 光半導体装置 |
| JP4105440B2 (ja) | 2002-01-30 | 2008-06-25 | 浜松ホトニクス株式会社 | 半導体光検出装置 |
| JP2004006694A (ja) * | 2002-03-29 | 2004-01-08 | Toshiba Corp | 受光素子及び光半導体装置 |
| US20050041292A1 (en) * | 2002-05-21 | 2005-02-24 | Wheatley John A. | Visible wavelength detector systems and filters therefor |
| CN1735973A (zh) * | 2003-01-20 | 2006-02-15 | 夏普株式会社 | 用于光学传感器滤波器的透明树脂组合物、光学传感器及其制造方法 |
| KR20060008871A (ko) | 2003-04-08 | 2006-01-27 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 가시 파장 검출기 시스템 및 그를 위한 필터 |
| JP2005079494A (ja) * | 2003-09-03 | 2005-03-24 | Moririka:Kk | 視感度補正された受光素子 |
| US7361943B2 (en) * | 2005-04-19 | 2008-04-22 | The Ohio State University | Silicon-based backward diodes for zero-biased square law detection and detector arrays of same |
| JP2006301489A (ja) * | 2005-04-25 | 2006-11-02 | Nidec Copal Corp | 近赤外線カットフィルタ |
| JP4432837B2 (ja) * | 2005-06-13 | 2010-03-17 | ミツミ電機株式会社 | 半導体光センサ装置 |
| US7897920B2 (en) * | 2005-09-21 | 2011-03-01 | Analog Devices, Inc. | Radiation sensor device and method |
| US7777355B2 (en) * | 2005-11-17 | 2010-08-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared-blocking encapsulant with organometallic colloids |
| DE102005060603A1 (de) | 2005-12-17 | 2007-06-21 | Bayerische Motoren Werke Ag | Vorrichtung zur Ermittlung der Helligkeit der Umgebung eines Kraftfahrzeugs |
| JP2008098516A (ja) | 2006-10-13 | 2008-04-24 | Sanyo Electric Co Ltd | 光電変換装置 |
-
2009
- 2009-03-12 DE DE102009012755A patent/DE102009012755A1/de not_active Ceased
-
2010
- 2010-03-10 KR KR1020117023725A patent/KR101705918B1/ko active Active
- 2010-03-10 US US13/254,366 patent/US8610225B2/en active Active
- 2010-03-10 EP EP10707060.9A patent/EP2406828B1/de active Active
- 2010-03-10 JP JP2011553446A patent/JP5670360B2/ja active Active
- 2010-03-10 WO PCT/EP2010/053046 patent/WO2010103047A1/de not_active Ceased
- 2010-03-10 CN CN201080011562.6A patent/CN102349161B/zh active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013101001A1 (de) | 2013-01-31 | 2014-07-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Strahlungssensor |
| WO2014117970A1 (de) | 2013-01-31 | 2014-08-07 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil und strahlungssensor |
| DE102013101001B4 (de) * | 2013-01-31 | 2020-10-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Strahlungssensor |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120007202A1 (en) | 2012-01-12 |
| WO2010103047A1 (de) | 2010-09-16 |
| JP5670360B2 (ja) | 2015-02-18 |
| KR20120001751A (ko) | 2012-01-04 |
| EP2406828A1 (de) | 2012-01-18 |
| CN102349161B (zh) | 2014-04-30 |
| JP2012520559A (ja) | 2012-09-06 |
| CN102349161A (zh) | 2012-02-08 |
| KR101705918B1 (ko) | 2017-02-10 |
| US8610225B2 (en) | 2013-12-17 |
| EP2406828B1 (de) | 2019-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2406828B1 (de) | Strahlungsempfangendes halbleiterbauelement und optoelektronisches bauteil | |
| DE102012109183A1 (de) | Optoelektronische Vorrichtung | |
| EP2649647B1 (de) | Optoelektronisches halbleiterbauelement, verfahren zu dessen herstellung und verwendung eines derartigen bauelements | |
| WO2012155984A1 (de) | Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen | |
| DE102012001481A1 (de) | Lichtsensor mit IR-Interferenz-Sperrfilter und Farbfilter, die auf einem Chip integriert sind | |
| EP3204739B1 (de) | Vorrichtung zur spektrometrischen erfassung von licht mit einer photodiode, die monolithisch in die schichtstruktur eines wellenlängenselektiven filters integriert ist | |
| DE102012107578A1 (de) | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements | |
| WO2015074950A1 (de) | Lichtemittierendes halbleiterbauelement mit absorptionsschicht | |
| WO2020074497A1 (de) | Optoelektronischer sensor | |
| DE102019208430A1 (de) | Nicht-invasiver optischer Detektor für innere Substanzen | |
| DE102015106995A1 (de) | Optischer Herzfrequenzsensor | |
| EP1668674A2 (de) | Strahlungsdetektor | |
| DE102014109230B4 (de) | Optischer Nähesensor und Verfahren zur Herstellung eines optischen Nähesensors | |
| WO2009027459A2 (de) | Sonnensensor zur erfassung der einfallsrichtung und der intensität von sonnenstrahlung | |
| DE102014107960A1 (de) | Optoelektronisches Bauelement | |
| WO2015154941A1 (de) | Optoelektronisches halbleiterelement, optoelektronisches halbleiterbauteil und verfahren zur herstellung einer mehrzahl von optoelektronischen halbleiterelementen | |
| DE112014002703B4 (de) | Optoelektronisches Halbleiterbauteil | |
| DE102013112882B4 (de) | Strahlungsempfängervorrichtung | |
| DE10220583B4 (de) | Optoelektronisches Bauelement | |
| DE10341086B4 (de) | Strahlungsempfangender Halbleiterkörper mit einer Filterschicht | |
| DE112021001772T5 (de) | Optoelektronische vorrichtung | |
| WO2009068015A1 (de) | Optoelektronischer halbleiterchip mit einer dielektrischen schichtstruktur | |
| DE10104715B4 (de) | Optisches Bauelement | |
| DE102024116596A1 (de) | Optoelektronisches Bauelement, reflektive Positionsmessvorrichtung mit einem optoelektronischen Bauelement sowie Verfahren zur Herstellung eines optoelektronischen Bauelements | |
| WO2023046374A1 (de) | Optoelektronische vorrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OR8 | Request for search as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8105 | Search report available | ||
| R012 | Request for examination validly filed | ||
| R082 | Change of representative |
Representative=s name: ZACCO PATENTANWALTS- UND RECHTSANWALTSGESELLSC, DE |
|
| R002 | Refusal decision in examination/registration proceedings | ||
| R003 | Refusal decision now final |