CN102347069B - 多层式存储闪存阵列的编程方式及其切换控制方法 - Google Patents

多层式存储闪存阵列的编程方式及其切换控制方法 Download PDF

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Publication number
CN102347069B
CN102347069B CN2011101389456A CN201110138945A CN102347069B CN 102347069 B CN102347069 B CN 102347069B CN 2011101389456 A CN2011101389456 A CN 2011101389456A CN 201110138945 A CN201110138945 A CN 201110138945A CN 102347069 B CN102347069 B CN 102347069B
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Prior art keywords
flash memory
programming
layer storage
pages
programming mode
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CN2011101389456A
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Chinese (zh)
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CN102347069A (zh
Inventor
霍文捷
邢翼鹏
周东霞
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Zhiyu Technology Co ltd
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Memory Technology (wuhan) Co Ltd
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Priority to CN2011101389456A priority Critical patent/CN102347069B/zh
Publication of CN102347069A publication Critical patent/CN102347069A/zh
Priority to US14/119,151 priority patent/US9542311B2/en
Priority to PCT/CN2012/072967 priority patent/WO2012159492A1/zh
Priority to JP2014511715A priority patent/JP5999455B2/ja
Priority to TW101117584A priority patent/TW201248635A/zh
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7206—Reconfiguration of flash memory system
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5648—Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CN2011101389456A 2011-05-26 2011-05-26 多层式存储闪存阵列的编程方式及其切换控制方法 Active CN102347069B (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2011101389456A CN102347069B (zh) 2011-05-26 2011-05-26 多层式存储闪存阵列的编程方式及其切换控制方法
US14/119,151 US9542311B2 (en) 2011-05-26 2012-03-23 Programming mode for multi-layer storage flash memory array and switching control method thereof
PCT/CN2012/072967 WO2012159492A1 (zh) 2011-05-26 2012-03-23 多层式存储闪存阵列的编程方式及其切换控制方法
JP2014511715A JP5999455B2 (ja) 2011-05-26 2012-03-23 多層式記憶フラッシュメモリアレイのプログラム方式及びその切替制御方法
TW101117584A TW201248635A (en) 2011-05-26 2012-05-17 Programming method for multi-layered flash memory array and switching control method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011101389456A CN102347069B (zh) 2011-05-26 2011-05-26 多层式存储闪存阵列的编程方式及其切换控制方法

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CN102347069A CN102347069A (zh) 2012-02-08
CN102347069B true CN102347069B (zh) 2013-04-03

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US (1) US9542311B2 (https=)
JP (1) JP5999455B2 (https=)
CN (1) CN102347069B (https=)
TW (1) TW201248635A (https=)
WO (1) WO2012159492A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102347069B (zh) * 2011-05-26 2013-04-03 忆正存储技术（武汉）有限公司 多层式存储闪存阵列的编程方式及其切换控制方法
CN118506834A (zh) * 2021-06-30 2024-08-16 长江存储科技有限责任公司 对存储器进行编程的方法及存储器
TWI773570B (zh) * 2021-10-29 2022-08-01 鯨鏈科技股份有限公司 基於晶圓堆疊架構的計算機系統和記憶體測試方法

Citations (2)

* Cited by examiner, † Cited by third party
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CN101430933A (zh) * 2007-10-23 2009-05-13 三星电子株式会社 多比特快闪存储器件及其编程和读取方法
CN101506900A (zh) * 2006-08-31 2009-08-12 美光科技公司 具有经选择以最小化信号耦合的位状态指派的非易失性存储器装置和方法

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US6781881B2 (en) * 2002-12-19 2004-08-24 Taiwan Semiconductor Manufacturing Company Two-transistor flash cell for large endurance application
US7230851B2 (en) * 2004-12-23 2007-06-12 Sandisk Corporation Reducing floating gate to floating gate coupling effect
US7400532B2 (en) * 2006-02-16 2008-07-15 Micron Technology, Inc. Programming method to reduce gate coupling interference for non-volatile memory
KR101041595B1 (ko) * 2006-06-19 2011-06-15 샌디스크 코포레이션 비휘발성 메모리에서 개선된 판독 동작을 위해 선택 상태에서 보상을 사용하여 감지 및 다른 크기의 마진 프로그래밍
US7518914B2 (en) * 2006-08-07 2009-04-14 Micron Technology, Inc. Non-volatile memory device with both single and multiple level cells
EP1892720B1 (en) * 2006-08-24 2011-07-27 STMicroelectronics Srl A non-volatile, electrically-programmable memory with a plurality of storage densities and data transfer speeds
JP4886434B2 (ja) * 2006-09-04 2012-02-29 株式会社東芝 不揮発性半導体記憶装置
JP5111882B2 (ja) * 2007-02-09 2013-01-09 株式会社東芝 不揮発性半導体記憶装置
JP4660520B2 (ja) * 2007-09-03 2011-03-30 株式会社東芝 不揮発性半導体記憶装置およびその駆動方法
US8004871B2 (en) * 2008-05-26 2011-08-23 Panasonic Corporation Semiconductor memory device including FET memory elements
US7983078B2 (en) * 2008-09-24 2011-07-19 Sandisk Technologies Inc. Data retention of last word line of non-volatile memory arrays
CN102347069B (zh) * 2011-05-26 2013-04-03 忆正存储技术（武汉）有限公司 多层式存储闪存阵列的编程方式及其切换控制方法
US9298603B2 (en) * 2011-09-09 2016-03-29 OCZ Storage Solutions Inc. NAND flash-based storage device and methods of using

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
CN101506900A (zh) * 2006-08-31 2009-08-12 美光科技公司 具有经选择以最小化信号耦合的位状态指派的非易失性存储器装置和方法
CN101430933A (zh) * 2007-10-23 2009-05-13 三星电子株式会社 多比特快闪存储器件及其编程和读取方法

Also Published As

Publication number Publication date
JP5999455B2 (ja) 2016-10-05
WO2012159492A1 (zh) 2012-11-29
TW201248635A (en) 2012-12-01
US9542311B2 (en) 2017-01-10
JP2014517978A (ja) 2014-07-24
US20140108712A1 (en) 2014-04-17
TWI506631B (https=) 2015-11-01
CN102347069A (zh) 2012-02-08

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Owner name: MEMORIGHT MEMORITECH (WUHAN) CO., LTD.

Free format text: FORMER NAME: MEMORIGHT STORAGE TECHNOLOGY (WUHAN) CO., LTD.

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Address after: 430070 Hubei city of Wuhan province East Lake New Technology Development Zone Road No. two high Guan Nan Industrial Park No. 2 building 2-3 floor West

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Address before: 430070 Hubei city of Wuhan province Kuanshan road Optics Valley Software Park building C3 on the third floor 301-303 room

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Address after: 430070 Hubei city of Wuhan province Wuhan East Lake New Technology Development Zone Road No. two high Guan Nan Industrial Park No. 2 building 2-3 floor West

Patentee after: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD.

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Denomination of invention: Programming mode of multilayer storage flash memory array and its switching control method

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Granted publication date: 20130403

Pledgee: Wuhan area branch of Hubei pilot free trade zone of Bank of China Ltd.

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Address after: 430000 west of 2-3 / F, No.2 factory building, Guannan Industrial Park, No.1 Gaoxin 2nd Road, Wuhan Donghu New Technology Development Zone, Wuhan City, Hubei Province

Patentee after: Zhiyu Technology Co.,Ltd.

Address before: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West.

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