CN102332461B - 带有绝缘埋层的图像传感器的制作方法 - Google Patents
带有绝缘埋层的图像传感器的制作方法 Download PDFInfo
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- CN102332461B CN102332461B CN 201110229920 CN201110229920A CN102332461B CN 102332461 B CN102332461 B CN 102332461B CN 201110229920 CN201110229920 CN 201110229920 CN 201110229920 A CN201110229920 A CN 201110229920A CN 102332461 B CN102332461 B CN 102332461B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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Application Number | Priority Date | Filing Date | Title |
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CN 201110229920 CN102332461B (zh) | 2011-08-11 | 2011-08-11 | 带有绝缘埋层的图像传感器的制作方法 |
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CN 201110229920 CN102332461B (zh) | 2011-08-11 | 2011-08-11 | 带有绝缘埋层的图像传感器的制作方法 |
Publications (2)
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CN102332461A CN102332461A (zh) | 2012-01-25 |
CN102332461B true CN102332461B (zh) | 2013-07-24 |
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CN 201110229920 Expired - Fee Related CN102332461B (zh) | 2011-08-11 | 2011-08-11 | 带有绝缘埋层的图像传感器的制作方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102723349B (zh) * | 2012-06-26 | 2015-01-21 | 中国科学院上海高等研究院 | 带有隔离层的cmos图像传感器及其制作方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008103566A (ja) * | 2006-10-19 | 2008-05-01 | Toshiba Corp | 固体撮像装置 |
CN101465361A (zh) * | 2007-12-18 | 2009-06-24 | 台湾积体电路制造股份有限公司 | 图像传感器元件的隔离结构 |
CN201904338U (zh) * | 2010-11-29 | 2011-07-20 | 格科微电子(上海)有限公司 | Cmos图像传感器 |
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Owner name: SHANGHAI ADVANCED RESEARCH INSTITUTE, CHINESE ACAD Free format text: FORMER OWNER: SHANGHAI ZHONGKE INSTITUTE FOR ADVANCED STUDY Effective date: 20131012 |
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Effective date of registration: 20131012 Address after: 201210 Shanghai city Pudong New Area Hartcourt Road No. 99 Patentee after: SHANGHAI ADVANCED Research Institute CHINESE ACADEMY OF SCIENCES Address before: 201210 Shanghai city Pudong New Area Hartcourt Road No. 99 Patentee before: SHANGHAI ADVANCED Research Institute CHINESE ACADEMY OF SCIENCES |
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