Summary of the invention
The problem that the present invention solves is that the good method for cleaning wafer of wafer cleaning device and cleaning performance is thoroughly polluted in cleaning.
For solving the problem, the invention provides a kind of wafer cleaning device, comprising: pallet, described pallet is for carrying wafer to be cleaned; Be arranged at the nozzle above pallet, described nozzle clean wafer to be cleaned time jet cleaner to crystal column surface; Be arranged at the apparatus for correcting above pallet, described apparatus for correcting is injected into the track of the cleaning agent of described crystal column surface for monitoring described nozzle.
Optionally, described apparatus for correcting comprises: be arranged at the first sensor above pallet, first recipient that arrange corresponding to first sensor; Be arranged at the second sensor above pallet, second recipient that arrange corresponding to the second sensor.
Optionally, first sensor launches the first sensing beam to described first recipient, and the second sensor emission second sensing beam is to described second recipient.
Optionally, the first sensing beam intersects in crystal circle center to be cleaned position with the second sensing beam.
Optionally, described first recipient and the second recipient signal connection data processor.
Optionally, described apparatus for correcting is that image accepts treating apparatus.
Optionally, described image accepts treating apparatus and comprises: image capturing device, and described image capturing device is for obtaining the image information of the track of described cleaning fluid; Accept the image processing apparatus of the view data of image capturing device shooting, described image processing apparatus is built-in with the image information of the track of the cleaning fluid of setting, when the image information of the track of the described cleaning fluid obtained transfers to image processing apparatus, the image information of setting and the image information of acquisition compare by described image processing apparatus, if comparative result is consistent, then proceed cleaning, if comparative result is inconsistent, then controls siren and give the alarm.
The present invention also provides a kind of method for cleaning wafer, comprising: provide wafer cleaning device, and described wafer cleaning device has pallet and nozzle; Described wafer cleaning device has the first sensor be arranged at above pallet, first recipient that arrange corresponding to first sensor; Be arranged at the second sensor above pallet, second recipient that arrange corresponding to the second sensor; First sensor launches the first sensing beam to described first recipient, and the second sensor emission second sensing beam is to described second recipient, and the first sensing beam intersects in tray center position with the second sensing beam; Wafer to be cleaned is positioned over tray surface, and described crystal circle center to be cleaned is overlapping with tray center; In cleaning wafer process, the cleaning fluid track that the cleaning fluid track overlapping time sprayed according to the first sensing beam and nozzle, the second sensing beam and nozzle spray judges whether described nozzle location will adjust overlapping time.
Optionally, described judgement comprises: if the cleaning fluid track that the first sensing beam and the cleaning fluid track overlapping time that nozzle sprays and the second sensing beam and nozzle spray is identical for overlapping time, then described nozzle location is without the need to adjustment; If the cleaning fluid track that the first sensing beam and the cleaning fluid track overlapping time that nozzle sprays and the second sensing beam and nozzle spray is not identical for overlapping time, then adjust described nozzle location.
Compared with prior art, the present invention has the following advantages: wafer cleaning device provided by the invention arranges described apparatus for correcting above pallet, described apparatus for correcting is injected into the track of the cleaning agent of described crystal column surface for monitoring described nozzle, when the track that described nozzle is injected into the cleaning agent of described crystal column surface does not mate with brilliant diameter of a circle, described apparatus for correcting gives the alarm, notify that staff adjusts the position of described nozzle, thus avoid wafer cleaning to be cleaned not thorough.
Cleaning method of the present invention can determination nozzle location promptly and accurately whether correct, avoid wafer cleaning thorough, the wafer contamination adopting method for cleaning wafer provided by the invention to clean is little.
Detailed description of the invention
Inventor finds in real work, there is very serious pollution sometimes in the wafer after adopting existing wafer cleaning device to clean, please refer to Fig. 2, Fig. 2 is the crystal column surface particle contamination datagram after adopting the cleaning of existing wafer cleaning device, can find from Fig. 2, the crystal column surface after cleaning has a large amount of particle contaminations.
For this reason, inventor carries out deep research to contamination phenomenon, finds that the above-mentioned reason with a large amount of particle contaminations is that the nozzle location skew of existing wafer cleaning device causes cannot the pollution on cleaning wafer surface completely, particularly: please refer to Fig. 3, when nozzle location is normal, AA line is the diameter of wafer 12, nozzle 11 is along described AA line jet cleaning liquid, meanwhile, wafer 12 around the wafer center of circle clockwise or be rotated counterclockwise, thus makes all positions of wafer 12 to be cleaned under the drive of described pallet 10, but, inventor finds, along with wafer cleaning device increases or (such as clashes into) under external interference service time, please refer to Fig. 4, nozzle 11 position may have variation, thus the cleaning fluid making nozzle 11 spray cannot along the diameter of wafer 12, in cleaning device increase service time or under external interference, nozzle 11 is along described BB line jet cleaning liquid, BB line is of wafer 12 is not the string of diameter, even if now wafer 12 under the drive of described pallet 10 around the wafer center of circle clockwise or be rotated counterclockwise, the part surface of wafer 12 still cannot be cleaned to by the cleaning fluid that nozzle 11 sprays, thus make wafer 12 surface leave pollution.
For this reason, the present inventor provides a kind of wafer cleaning device, please refer to Fig. 5, comprising: pallet 100, and described pallet 100 is for carrying wafer 101 to be cleaned; Be arranged at the nozzle 110 above pallet 100, described nozzle 110 jet cleaner when cleaning wafer 101 to be cleaned is surperficial to wafer 101; Be arranged at the apparatus for correcting 120 above pallet 100, described apparatus for correcting 120 is injected into the track of the cleaning agent on described wafer 101 surface for monitoring described nozzle 110.
Particularly, pallet 100, described pallet 100 is for carrying wafer 101 to be cleaned, described pallet 100 size is greater than described wafer to be cleaned 101 size, described wafer to be cleaned 101 is positioned over pallet 100 surface and described wafer to be cleaned 101 center is aimed at described pallet 100 center, described pallet 100 is provided with drive unit (not shown), and described pallet 100 can around the central rotation of pallet under the driving of drive unit, thus drive described wafer to be cleaned 101 to rotate.
Described nozzle 110 is connected (not shown) with accommodation soda liquor container pipeline, and there is the switch controlling cleaning fluid and spray, described nozzle 110 has hydraulic means, can control cleaning fluid with the pressure injection of setting to described wafer 101 surface to be cleaned under the control of described switch; Described cleaning fluid can be deionized water (DI-Water), acidic chemical cleaning agent, alkali electroless cleaning agent or organic chemistry cleaning agent (such as: alcohol, acetone etc.).
Described apparatus for correcting 120 is injected into the track of the cleaning agent on described wafer 101 surface for monitoring described nozzle 110, described wafer cleaning device also comprises the siren (not shown) be connected with apparatus for correcting 120 signal, when described apparatus for correcting 120 to be injected into the cleaning agent on described wafer 101 surface track for monitoring out described nozzle 110 does not mate with the diameter of wafer 101, described apparatus for correcting 120 sends signal to siren, siren will be reported to the police, staff is by the position of the described nozzle 110 of adjustment, described nozzle 110 is made to be injected into the track of cleaning agent and the diameter matches of wafer 101 on described wafer 101 surface, avoid wafer cleaning device cleaning wafer 101 not thorough, thus remove the pollution on wafer 101 surface completely.
Embodiments of the invention arrange described apparatus for correcting 120 above pallet 100, described apparatus for correcting 120 is injected into the track of the cleaning agent on described wafer 101 surface for monitoring described nozzle 110, when the track that described nozzle 110 is injected into the cleaning agent on described wafer 101 surface does not mate with the diameter of wafer 101, described apparatus for correcting 120 gives the alarm, notify that staff adjusts the position of described nozzle 110, thus avoid wafer cleaning to be cleaned not thorough.
Be described in detail below in conjunction with the embodiment of accompanying drawing to wafer cleaning device of the present invention.
Please refer to Fig. 6, the wafer cleaning device of one embodiment of the invention comprises: pallet 100, and described pallet 100 is for carrying wafer 101 to be cleaned; Described pallet 100 size is greater than described wafer to be cleaned 101 size, described wafer to be cleaned 101 is positioned over pallet 100 surface and described wafer to be cleaned 101 center is aimed at described pallet 100 center, described pallet 100 is provided with drive unit (not shown), described pallet 100 can around the central rotation of pallet under the driving of drive unit, thus drive described wafer to be cleaned 101 to rotate; Described wafer to be cleaned 101 size can be 12 inches, 8 inches, 6 inches ....
Be arranged at the nozzle 110 above pallet 100, described nozzle 110 jet cleaner when cleaning wafer 101 to be cleaned is surperficial to wafer 101, described nozzle 110 is connected (not shown) with accommodation soda liquor container pipeline, and there is the switch controlling cleaning fluid and spray, described nozzle 110 has hydraulic means, can control cleaning fluid with the pressure injection of setting to described wafer 101 surface to be cleaned under the control of described switch; Described cleaning fluid can be deionized water (DI-Water), acidic chemical cleaning agent, alkali electroless cleaning agent or organic chemistry cleaning agent (such as: alcohol, acetone etc.).
Be arranged at the first sensor 201 above pallet 100, first recipient 202 that arrange corresponding to first sensor; Be arranged at the second sensor 203 above pallet 100, second recipient 204 that arrange corresponding to the second sensor.
Wherein, first sensor 201 is launched the first sensing beam to described first recipient 202, second sensor 203 and is launched the second sensing beam to described second recipient 204, first sensing beam and intersect in crystal circle center to be cleaned position with the second sensing beam.
Described first recipient 202 and the second recipient 203 signal connection data processor, when wafer cleaning device treat cleaning wafer clean time, when the cleaning fluid that described nozzle 110 sprays touches the first sensing beam and the second sensing beam, cleaning fluid is touched the first sensing beam time t1 by described first recipient 202 and the second recipient 204, the t2 touching for the second sensing beam time is sent to data processor, data processor accepts t1 and t2 and compares, if t1 and t2 is unequal, then illustrate that described nozzle 110 position needs adjustment, data processor will be given the alarm by siren, if t1 and t2 is equal, illustrate that described nozzle 110 position is correct, wafer cleaning device normal wash wafer 101 to be cleaned.
Wherein first sensor 201 and the second sensor 203 can be light-beam transmitter, generating laser etc.
The present embodiment adopts first sensor 201 and the second sensor 203 to launch the light beam intersecting at wafer 101 center to be cleaned, utilize light beam to the time of the cleaning fluid and beam contacts that measure injection, and judge whether the track of described cleaning fluid satisfies the demands according to the described time, thus judge whether the position needing adjustment nozzle 110, adopt the present embodiment can the effect of judgement cleaning device cleaning wafer promptly and accurately, thus avoid cleaning wafer weak effect, and adopt the light beam intersecting at wafer 101 center to be cleaned to judge the position of nozzle 110, rapidly accurately, data processor processes data volume is little.
It should be noted that, in another embodiment, the light beam that described first sensor 201 and the second sensor 203 are launched does not need to intersect at wafer 101 center to be cleaned, only need to arrange calculation procedure in data processor inside, whether the track directly being calculated described cleaning fluid by calculation procedure is satisfied the demands, thus judges whether the position needing adjustment nozzle 110.
Please refer to Fig. 7, the wafer cleaning device of further embodiment of this invention comprises: pallet 100, and described pallet 100 is for carrying wafer 101 to be cleaned; Described pallet 100 size is greater than described wafer to be cleaned 101 size, described wafer to be cleaned 101 is positioned over pallet 100 surface and described wafer to be cleaned 101 center is aimed at described pallet 100 center, described pallet 100 is provided with drive unit (not shown), described pallet 100 can around the central rotation of pallet under the driving of drive unit, thus drive described wafer to be cleaned 101 to rotate; Described wafer to be cleaned 101 size can be 12 inches, 8 inches, 6 inches ....
Be arranged at the nozzle 110 above pallet 100, described nozzle 110 jet cleaner when cleaning wafer 101 to be cleaned is surperficial to wafer 101, described nozzle 110 is connected (not shown) with accommodation soda liquor container pipeline, and there is the switch controlling cleaning fluid and spray, described nozzle 110 has hydraulic means, can control cleaning fluid with the pressure injection of setting to described wafer 101 surface to be cleaned under the control of described switch; Described cleaning fluid can be deionized water (DI-Water), acidic chemical cleaning agent, alkali electroless cleaning agent or organic chemistry cleaning agent (such as: alcohol, acetone etc.).
The image be arranged at above pallet 100 accepts treating apparatus 300, described image processing apparatus is for taking the track of described cleaning fluid, and whether the track calculating described cleaning fluid overlaps with the diameter of wafer 101 to be cleaned, if the track of described cleaning fluid overlaps with the diameter of wafer 101 to be cleaned, then proceed wafer cleaning; If the track of described cleaning fluid does not overlap with the diameter of wafer 101 to be cleaned, then described image processing apparatus control siren gives the alarm.
Wherein said image accepts treating apparatus 300, please refer to Fig. 8, comprising: image capturing device 301, and described image capturing device 301 can be digital camera or DV, and described image capturing device is for obtaining the image information of the track of described cleaning fluid, accept the image processing apparatus 302 of the view data that image capturing device 301 is taken, described image processing apparatus 302 can be computer or picture processing chip, described image processing apparatus is built-in with the image information of the track of the cleaning fluid of setting, when the image information of the track of the described cleaning fluid obtained transfers to image processing apparatus 302, the image information of setting and the image information of acquisition compare by described image processing apparatus 302, if comparative result is consistent, then proceed cleaning, if comparative result is inconsistent, then control siren 303 to give the alarm, described image processing apparatus 302 also comprises the memory of the image information of the track of the cleaning fluid storing setting, the siren 303 be connected with image processing apparatus signal, described siren 303 can give the alarm at described image processing apparatus 302.
The present embodiment adopts image to accept the track that treating apparatus 300 obtains cleaning fluid, and compare with the image information of setting, thus whether can obtain the position of the switch controlling cleaning fluid injection accurately correct, the wafer cleaning device of the present embodiment has comparative result accurately, and alarm is advantage accurately.
Embodiments of the invention also provide a kind of method for cleaning wafer, comprising:
There is provided wafer cleaning device, described wafer cleaning device has pallet and nozzle; Described wafer cleaning device has the first sensor be arranged at above pallet, first recipient that arrange corresponding to first sensor; Be arranged at the second sensor above pallet, second recipient that arrange corresponding to the second sensor; First sensor launches the first sensing beam to described first recipient, and the second sensor emission second sensing beam is to described second recipient, and the first sensing beam intersects in tray center position with the second sensing beam;
Wafer to be cleaned is positioned over tray surface, and described crystal circle center to be cleaned is overlapping with tray center;
In cleaning wafer process, the cleaning fluid track that the cleaning fluid track overlapping time sprayed according to the first sensing beam and nozzle, the second sensing beam and nozzle spray judges whether described nozzle location will adjust overlapping time.
Particularly, if the cleaning fluid track that the first sensing beam and the cleaning fluid track overlapping time that nozzle sprays and the second sensing beam and nozzle spray is identical for overlapping time, then described nozzle location is without the need to adjustment; If the cleaning fluid track that the first sensing beam and the cleaning fluid track overlapping time that nozzle sprays and the second sensing beam and nozzle spray is not identical for overlapping time, then adjust described nozzle location.
Method for cleaning wafer provided by the invention can determination nozzle location promptly and accurately whether correct, avoid wafer cleaning thorough, the wafer contamination adopting method for cleaning wafer provided by the invention to clean is little.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.