CN203631506U - Cleaning device used for cleaning wafer - Google Patents
Cleaning device used for cleaning wafer Download PDFInfo
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- CN203631506U CN203631506U CN201320804360.8U CN201320804360U CN203631506U CN 203631506 U CN203631506 U CN 203631506U CN 201320804360 U CN201320804360 U CN 201320804360U CN 203631506 U CN203631506 U CN 203631506U
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- wafer
- shower nozzle
- cleaning device
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Abstract
The utility model provides a cleaning device used for cleaning wafers. The cleaning device comprises a mixing unit, a first pipeline, a second pipeline, and a mixing pipeline, wherein the first pipeline, the second pipeline, and the mixing pipeline are connected with the mixing unit. The mixing pipeline is also connected with a nozzle right facing a wafer. A movable shielding disc is arranged between the nozzle and the wafer. The movable shielding disc is arranged between the nozzle and the wafer so as to shield plasma water or nitrogen before the plasma water or the nitrogen is sprayed. The shielding disc is not removed until the mixing unit makes the nitrogen and the plasma water into high-pressure water spray. The high-pressure water spray is directly sprayed onto the surface of the wafer in order to clean the wafer. The plasma water or the nitrogen is prevented from being directly sprayed onto the surface of the wafer in order to decrease the formation of static and prevent damage on the wafer.
Description
Technical field
The utility model relates to field of semiconductor manufacture, relates in particular to a kind of cleaning device.
Background technology
In field of semiconductor manufacture, conventionally can after forming thin film, clean it wafer, remain in the particle (Particle) of crystal column surface to remove, reduce the formation of defect (Defect), improve the yield of wafer.
The board that wafer is cleaned is called cleaning machine (Scrubber tool), and cleaning machine is to utilize plasma water to rinse the surface of wafer, and it cleans and is mainly divided into three kinds of cleaning ways: splash, brush and spraying.That the most frequently used is atomizing (Spray).Atomizing is to adopt nitrogen by siphonage, plasma water to be taken out of at a high speed, and formation high-pressure water mist sprays to the surface of wafer, to remove the particle of crystal column surface.According to the difference of granular size, different nitrogen and the flow of plasma water are set.
Please refer to Fig. 1, Fig. 1 is cleaning device structural representation in prior art, described cleaning device is positioned at cleaning machine inside, comprise mixed cell 10, nitrogen pipeline 11, plasma water pipeline 12, mixed pipe line 13 and shower nozzle 20, wherein, described nitrogen pipeline 11, plasma water pipeline 12 and mixed pipe line 13 are all connected with described mixed cell 10, and described shower nozzle 20 is connected with described mixed pipe line 13.In the time cleaning, wafer 30 is positioned at the below of described shower nozzle 20, nitrogen is provided by described nitrogen pipeline 11, plasma water is provided by described plasma water pipeline 12, after mixing in described mixed cell 10 with plasma water, described nitrogen enters again described mixed pipe line 13, spray the surface of high-pressure water mist 21 to wafer 30 by described shower nozzle 20, to remove particle.
But, in actual applications, find that, after some technique is cleaned, the aluminium panel surface of the center of wafer 30 exists damage, judge and belong to by due to electrostatic breakdown from the profile of damage.Therefore, cleaning just becomes the object of highly suspecting.
Utility model content
The purpose of this utility model is to provide a kind of cleaning device, can reduce the generation of static, avoids static to cause damage to wafer.
To achieve these goals, the utility model proposes a kind of cleaning device, for wafer is cleaned, the first pipeline, the second pipeline and mixed pipe line that described device comprises mixed cell, is connected with described mixed cell, wherein said mixed pipe line also connects a shower nozzle, described shower nozzle and described wafer are just right, are provided with mobilizable dish that blocks between described shower nozzle and wafer.
Further, described cleaning device also comprises a fixture, and described fixture is fixed on described shower nozzle one side, and is connected with the described dish that blocks.
The size of blocking dish further, is greater than the size of described shower nozzle.
Further, the vertical view of described shower nozzle is circular, and the diameter range of described shower nozzle is 2cm～8cm.
Further, described in block dish vertical view for circular, described in block dish diameter range be 3cm～9cm.
Further, described shower nozzle is provided with multiple holes, and described hole is the surface at described shower nozzle according to certain regular distribution.
Compared with prior art, the beneficial effects of the utility model are mainly reflected in: mobilizable dish that blocks is set between shower nozzle and wafer, before spraying plasma water or nitrogen, first use and block Pan Duidenglizishui or nitrogen blocks, until mixed cell is made into nitrogen and plasma water after high-pressure water mist and removes and block dish, make high-pressure water mist directly be sprayed onto the surface of wafer, clean, prevent that plasma water or nitrogen are sprayed directly on to the surface of wafer, reduce the formation of static, avoid wafer to cause damage.
Accompanying drawing explanation
Fig. 1 is the structural representation of cleaning device in prior art;
Fig. 2 is the structural representation of cleaning device in the utility model one embodiment.
Embodiment
Below in conjunction with schematic diagram, cleaning device of the present utility model is described in more detail, wherein represent preferred embodiment of the present utility model, should be appreciated that those skilled in the art can revise the utility model described here, and still realize advantageous effects of the present utility model.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as to restriction of the present utility model.
For clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the utility model chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details to realize developer's specific objective, for example, according to about system or about the restriction of business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, with way of example, the utility model is more specifically described with reference to accompanying drawing.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of aid illustration the utility model embodiment lucidly.
Mention as background technology, it is very likely the static that produces of cleaning and forming that crystal circle center position exists damage, and in order to confirm this theory, inventor has done one group of experiment: (1) only sprays nitrogen to crystal column surface; (2) to spraying plasma water to crystal column surface; (3) high-pressure water mist that spray is formed by nitrogen and plasma water.Found that, while only spraying nitrogen, the static producing at crystal column surface is maximum, subsequently be spray plasma water, produce static minimum be the high-pressure water mist that formed by nitrogen and plasma water of spray.And shower nozzle is positioned at the center of wafer in prior art, normally first spray nitrogen, exist damage to be consistent more greatly with crystal circle center position, this also further the cleaning of confirmed prior art really produced static and wafer caused to damage.
In view of this, the utility model proposes a kind of cleaning device, its core concept is: between shower nozzle and wafer, add one and block dish, initial nitrogen and plasma water are first sprayed onto to be blocked on dish, avoid nitrogen or plasma water to be directly sprayed onto the surface of wafer, after forming high-pressure water mist, remove again and block dish, now just can avoid initial electrostatic effect, reduce the generation of static.
Please refer to Fig. 2, in the present embodiment, a kind of cleaning device has been proposed, for wafer 400 is cleaned, described device comprises mixed cell 100, the first pipeline 110 being connected with described mixed cell 100, the second pipeline 120 and mixed pipe line 130, wherein, described the first pipeline 110 is in order to provide nitrogen, described the second pipeline 120 is in order to provide plasma water, described the 3rd pipeline 130 is for transmitting the mixture of nitrogen and plasma water, described mixed pipe line 130 also connects a shower nozzle 200, described shower nozzle 200 is just right with described wafer 400, between described shower nozzle 200 and wafer 400, be provided with mobilizable dish 320 that blocks.
In the present embodiment, described cleaning device also comprises a fixture 310, and described fixture 310 is fixed on a side of described shower nozzle 200, and is connected with the described dish 320 that blocks, and described in making, blocking dish 320 can move freely.
In the present embodiment, described size of blocking dish 320 is greater than the size of described shower nozzle 200, to can all shelter from the nitrogen or the plasma water that are sprayed by described shower nozzle 200, prevent some nitrogen or the plasma water splash surface to described wafer 400.Wherein, the vertical view of described shower nozzle 200 is circular, the diameter range of described shower nozzle 200 is 2cm～8cm, be for example 5cm, described shower nozzle 200 is provided with multiple holes, and described hole is the surface at described shower nozzle 200 according to certain regular distribution, described hole is used for spraying high-pressure water mist, described dish 320 the vertical view that blocks is for circular, described in block dish 320 diameter range be 3cm～9cm, be for example 6cm.
To sum up, in the cleaning device providing at the utility model embodiment, one mobilizable dish that blocks is set between shower nozzle and wafer, before spraying plasma water or nitrogen, first use and block Pan Duidenglizishui or nitrogen blocks, until mixed cell is made into nitrogen and plasma water after high-pressure water mist and removes and block dish, make high-pressure water mist directly be sprayed onto the surface of wafer, clean, prevent that plasma water or nitrogen are sprayed directly on to the surface of wafer, reduce the formation of static, avoid wafer to cause damage.
Above are only preferred embodiment of the present utility model, the utility model is not played to any restriction.Any person of ordinary skill in the field; not departing from the scope of the technical solution of the utility model; the technical scheme that the utility model is disclosed and technology contents make any type of variations such as replacement or modification that are equal to; all belong to the content that does not depart from the technical solution of the utility model, within still belonging to protection range of the present utility model.
Claims (6)
1. a cleaning device, for wafer is cleaned, it is characterized in that, the first pipeline, the second pipeline and mixed pipe line that described device comprises mixed cell, is connected with described mixed cell, wherein said mixed pipe line also connects a shower nozzle, described shower nozzle and described wafer are just right, are provided with mobilizable dish that blocks between described shower nozzle and wafer.
2. cleaning device as claimed in claim 1, is characterized in that, described cleaning device also comprises a fixture, and described fixture is fixed on described shower nozzle one side, and is connected with the described dish that blocks.
3. cleaning device as claimed in claim 1, is characterized in that, described in block dish size be greater than the size of described shower nozzle.
4. cleaning device as claimed in claim 3, is characterized in that, the vertical view of described shower nozzle is circular, and the diameter range of described shower nozzle is 2cm～8cm.
5. cleaning device as claimed in claim 4, is characterized in that, described in block dish vertical view for circular, described in block dish diameter range be 3cm～9cm.
6. cleaning device as claimed in claim 1, is characterized in that, described shower nozzle is provided with multiple holes, and described hole is the surface at described shower nozzle according to certain regular distribution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320804360.8U CN203631506U (en) | 2013-12-09 | 2013-12-09 | Cleaning device used for cleaning wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320804360.8U CN203631506U (en) | 2013-12-09 | 2013-12-09 | Cleaning device used for cleaning wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203631506U true CN203631506U (en) | 2014-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320804360.8U Expired - Fee Related CN203631506U (en) | 2013-12-09 | 2013-12-09 | Cleaning device used for cleaning wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091756A (en) * | 2014-07-17 | 2014-10-08 | 上海华力微电子有限公司 | Nozzle device of washing machine |
| CN105185730A (en) * | 2015-08-16 | 2015-12-23 | 大连海事大学 | Low-temperature oxygen plasma ultra-clean water silicon chip cleaning system |
| CN110871187A (en) * | 2018-08-30 | 2020-03-10 | 台湾积体电路制造股份有限公司 | Wafer cleaning system and method |
| TWI762072B (en) * | 2020-12-08 | 2022-04-21 | 力晶積成電子製造股份有限公司 | Wafer cleaning machine |
| CN114669529A (en) * | 2022-03-01 | 2022-06-28 | 安徽科技学院 | Three-fluidization-based bacterial inhibition type fine selection device for fermenting ganoderma lucidum powder |
-
2013
- 2013-12-09 CN CN201320804360.8U patent/CN203631506U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091756A (en) * | 2014-07-17 | 2014-10-08 | 上海华力微电子有限公司 | Nozzle device of washing machine |
| CN105185730A (en) * | 2015-08-16 | 2015-12-23 | 大连海事大学 | Low-temperature oxygen plasma ultra-clean water silicon chip cleaning system |
| CN105185730B (en) * | 2015-08-16 | 2017-08-01 | 大连海事大学 | A kind of ultra-clean water cleaning silicon chip system of low-temperature oxygen plasma |
| CN110871187A (en) * | 2018-08-30 | 2020-03-10 | 台湾积体电路制造股份有限公司 | Wafer cleaning system and method |
| CN110871187B (en) * | 2018-08-30 | 2021-07-27 | 台湾积体电路制造股份有限公司 | Wafer cleaning system and method |
| TWI762072B (en) * | 2020-12-08 | 2022-04-21 | 力晶積成電子製造股份有限公司 | Wafer cleaning machine |
| CN114669529A (en) * | 2022-03-01 | 2022-06-28 | 安徽科技学院 | Three-fluidization-based bacterial inhibition type fine selection device for fermenting ganoderma lucidum powder |
| CN114669529B (en) * | 2022-03-01 | 2022-11-11 | 安徽科技学院 | Three-fluidization-based bacterial inhibition type fine selection device for fermenting ganoderma lucidum powder |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140604 Termination date: 20191209 |