CN101884983A - Semiconductor cleaning device and method for cleaning semiconductor apparatuses - Google Patents
Semiconductor cleaning device and method for cleaning semiconductor apparatuses Download PDFInfo
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- CN101884983A CN101884983A CN2010102293668A CN201010229366A CN101884983A CN 101884983 A CN101884983 A CN 101884983A CN 2010102293668 A CN2010102293668 A CN 2010102293668A CN 201010229366 A CN201010229366 A CN 201010229366A CN 101884983 A CN101884983 A CN 101884983A
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Abstract
The invention provides a semiconductor cleaning device and a method for cleaning semiconductor apparatuses. The pressure of a technical cavity can be well monitored and regulated by arranging a pressure regulator on a liquid drain pipe, a plurality of semiconductor apparatuses can be cleaned simultaneously by arranging a plurality of apparatus clamping parts on a support. The support and the apparatus clamping parts are movably connected. The semiconductor apparatuses to be cleaned can be cleaned while tilting. Supercritical fluid flows across the surfaces of the tilting semiconductor apparatuses under the action of gravity, and certain relative movement occurs between the supercritical fluid and the surfaces of the semiconductor apparatuses. Compared with the simply soaking, the invention removes contaminants on the surfaces of the semiconductor apparatuses more efficiently, and the purpose of cleaning a plurality of silicone chips at a time is realized.
Description
Technical field
The present invention relates to semiconductor devices and clean the field, relate in particular to semiconductor cleaning apparatus and utilize it to clean the method for semiconductor devices.
Background technology
Follow the continuous progress of integrated circuit fabrication process, it is more and more littler that the volume of semiconductor devices is just becoming, and therefore, it is more and more important that the material unaccounted-for (MUF) that cleaning is brought also becomes.In state-of-the-art technology, clean the material unaccounted-for (MUF) that is allowed each time and reached a very small quantity, this is a sizable challenge for cleaning.At this wherein, because heavy dose of ion implantation technology, can form the carbon-coating of a dehydrogenation, amorphous on the photoresist surface, therefore for the peeling off of the photoresist layer after injecting through the excess dosage ion, acid test especially.
The technology of removing photoresist of industry-wide adoption is at present carried out ashing for being suitable for oxygen plasma earlier to photoresist, and then removes surface residues by the mode of wet-cleaning.This method can have more consumption for backing material in preceding road technology, in the manufacturing of road, back metal interconnecting wires, can cause damage to novel low dielectric coefficient medium layer, and actual dielectric constant is improved, and influences properties of product and reliability.Simultaneously, this method also will consume a large amount of water, produce a lot of poisonous and hazardous discarded objects simultaneously.
Supercritical fluid mainly is a supercritical carbon dioxide, is thought most promising silicon chip cleaning technique of future generation by industry at present.Supercritical carbon dioxide has high density, low viscosity, and high diffusibility, advantages such as high-dissolvability can overcome capillary effect, clean the through hole and the raceway groove of those minor diameters, high-aspect-ratio effectively.Simultaneously, whole cleaning process is consume water not substantially, and carbon dioxide can reclaim and reuse, and the discarded object that is produced is less than existing technology far away.
Present experimental supercritical carbon dioxide cleaning equipment all is one chip basically.If can there be equipment once to clean many pieces of silicon chips, that will improve device efficiency greatly, makes this technology become main flow technology better.
Summary of the invention
The technical problem that the present invention solves is: existing supercritical carbon dioxide cleaning equipment and cleaning method all are one chip basically, can not clean the multi-disc semiconductor devices simultaneously.
For achieving the above object, the invention provides a kind of semiconductor cleaning apparatus of suitable supercritical fluid, comprise: process cavity, be positioned at the input duct and the support of described process cavity, on described input duct, be provided with a plurality of nozzles, be provided with Drainage pipe in described process cavity bottom, wherein, described Drainage pipe is provided with pressure regulator, and described support is provided with a plurality of devices holding section, and described support and described device holding section flexibly connect.
Optionally, in described semiconductor cleaning apparatus, described device holding section can become the angle of 30 degree to 60 degree with horizontal plane.
Optionally, in described semiconductor cleaning apparatus, the material of described support is PFA or PTEE.
Optionally, in described semiconductor cleaning apparatus, the range of regulation of described pressure regulator is 0-200bar.
Optionally, in described semiconductor cleaning apparatus, described a plurality of nozzles are divided into the plurality of nozzles group, and the quantity of the quantity of described nozzle sets and described device holding section equates.
Optionally, in described semiconductor cleaning apparatus, the corresponding switch of each described nozzle sets, the nozzle that each described switch is controlled in the same nozzle sets opens or closes simultaneously.
The present invention also provides semiconductor cleaning apparatus to clean the method for semiconductor devices, comprises the steps:
Open described process cavity, described semiconductor devices vertically is placed on the described device holding section;
Close described process cavity, adjust the interior environment of described process cavity to process environments;
Described device holding section drives described semiconductor devices and tilts to certain angle;
Described nozzle begins to spray supercritical fluid in described process cavity, to clean described semiconductor devices;
After cleaning finishes, adjust the interior environment of described process cavity to conventional environment;
Open described process cavity, take out described semiconductor devices.
Optionally, in the method for described cleaning semiconductor devices, described certain angle is 30 degree-60 degree.
Optionally, in the method for described cleaning semiconductor devices, adjust described process environments and be temperature greater than 32 degree, pressure environment greater than 80bar.
Optionally, in the method for described cleaning semiconductor devices, described supercritical fluid is the CO 2 fluid that has added cosolvent and/or additive.
Optionally, in the method for described cleaning semiconductor devices, the flow of the supercritical fluid on each semiconductor devices is the 0.5-2 kg p m.
Described semiconductor cleaning apparatus of the present invention and the method for utilizing its cleaning semiconductor devices, by on described Drainage pipe, pressure regulator being set, can well monitor and regulate the pressure in the described process cavity, be provided with a plurality of devices holding section by described support, can clean a plurality of semiconductor devices simultaneously, described support and described device holding section flexibly connect, when being tilted, finishes the semiconductor devices that is cleaned cleaning, supercritical fluid flows through the surface of the semiconductor devices of inclination under the effect of gravity, supercritical fluid and semiconductor device surface produce certain relative motion, contamination than semiconductor device surface is more effectively removed in simple immersion realizes the purpose of once cleaning many pieces of silicon chips.
Description of drawings
Fig. 1 is the semiconductor cleaning apparatus of one embodiment of the invention.
The specific embodiment
In order to make protection domain of the present utility model clear more understandable, the technical solution of the utility model is described below in conjunction with preferred embodiment of the present utility model.
Fig. 1 is the semiconductor cleaning apparatus of one embodiment of the invention.With reference to shown in Figure 1, the invention provides a kind of semiconductor cleaning apparatus of suitable supercritical fluid, comprise: process cavity 10, be positioned at the input duct 12 and the support 20 of described process cavity 10, on described input duct 12, be provided with a plurality of nozzles 14, be provided with Drainage pipe 22 in described process cavity 10 bottoms, described Drainage pipe 22 can in time be discharged the supercritical fluid after the use, wherein, described Drainage pipe 22 is provided with pressure regulator 24, described pressure regulator 24 can implement to regulate the air pressure in the process cavity 10, and described support 20 is provided with a plurality of devices holding section 16, and described support 20 and described device holding section 16 flexibly connect.
In the present embodiment, described support 20 and described device holding section 16 flexibly connect by connector 18, shape and structure about described device holding section 16, be that those skilled in that art design as the case may be, as long as can satisfy semiconductor devices fixing go up just passable, as when as described in semiconductor devices when being wafer, described device holding section 16 also is a circle, have at least 3 buckles on described holding section 16, the even distribution of described buckle can be fixed wafer.The inclination of described device holding section 16 can realize by special control module control, described control module is within those skilled in the art's the designed capacity scope, as, it is control chip with control program, or be arranged on the outer frame for movement of forming by pull bar of process cavity 10, as long as can realize the inclination of holding section 16 and vertically control just passable.
Optionally, in described semiconductor cleaning apparatus, described device holding section 16 can become the angle of 30 degree to 60 degree with horizontal plane.
Optionally, in described semiconductor cleaning apparatus, the material of described support 20 is PFA or PTEE.
Optionally, in described semiconductor cleaning apparatus, the range of regulation of described pressure regulator 24 is 0-200bar.
Optionally, in described semiconductor cleaning apparatus, described a plurality of nozzles 14 are divided into the plurality of nozzles group, and the quantity of the quantity of described nozzle sets and described device holding section 16 equates.Like this, every group of corresponding device holding section 16 of nozzle sets, can fix a semiconductor devices on each device holding section 16, every group of nozzle sets can be cleaned a semiconductor devices simultaneously, do not place the device holding section 16 pairing nozzle sets of semiconductor devices and close, can save the supercritical fluid resource like this.
Optionally, in described semiconductor cleaning apparatus, the corresponding switch of each described nozzle sets, the nozzle that each described switch is controlled in the same nozzle sets opens or closes simultaneously.
The present invention also provides semiconductor cleaning apparatus to clean the method for semiconductor devices, comprises the steps:
Open described process cavity 10, described semiconductor devices vertically is placed on the described device holding section 16;
Close described process cavity 10, adjust environment in the described process cavity 10 to process environments;
Described device holding section 16 drives described semiconductor devices and tilts to certain angle;
Described nozzle begins to spray supercritical fluid in described process cavity 10, to clean described semiconductor devices;
After cleaning finishes, adjust environment in the described process cavity 10 to conventional environment; Described conventional environment is often referred to the normal pressure and temperature environment outside the process environments for described process environments.
Open described process cavity 10, take out described semiconductor devices.
Optionally, after the environment in described process cavity 10 is adjusted to conventional environment; Described holding section 16 is returned to vertical position; Open described process cavity 10 then, take out described semiconductor devices.Described holding section 16 is returned to vertical position, help being positioned at semiconductor devices on the described holding section 1, also help taking off described semiconductor devices, thereby conveniently from process cavity 10, take out described semiconductor devices from described holding section 16 with tool holding.
Optionally, in the present embodiment, described certain angle is 30 degree-60 degree.
Optionally, in the present embodiment, adjust described process environments and be temperature greater than 32 degree, pressure environment greater than 80bar.
Optionally, in the present embodiment, described supercritical fluid is the CO 2 fluid that has added cosolvent and/or additive.
Optionally, in the present embodiment, the flow of the supercritical fluid on each semiconductor devices is the 0.5-2 kg p m.The flow of described supercritical fluid can be realized by flowmeter.
Described semiconductor cleaning apparatus of the present invention and the method for utilizing its cleaning semiconductor devices, by on described Drainage pipe, pressure regulator being set, can well monitor and regulate the pressure in the described process cavity, be provided with a plurality of devices holding section by described support, can clean a plurality of semiconductor devices simultaneously, described support and described device holding section flexibly connect, when being tilted, finishes the semiconductor devices that is cleaned cleaning, supercritical fluid flows through the surface of the semiconductor devices of inclination under the effect of gravity, supercritical fluid and semiconductor device surface produce certain relative motion, contamination than semiconductor device surface is more effectively removed in simple immersion realizes the purpose of once cleaning many pieces of silicon chips.
Result of study shows, cooperates suitable cosolvent and additive, and supercritical carbon dioxide fluid can directly be removed through the photoresist after ion injection or the etching, and does not damage backing material fully.
Claims (11)
1. the semiconductor cleaning apparatus of a suitable supercritical fluid, comprise: process cavity, be positioned at the input duct and the support of described process cavity, on described input duct, be provided with a plurality of nozzles, be provided with Drainage pipe in described process cavity bottom, it is characterized in that described Drainage pipe is provided with pressure regulator, described support is provided with a plurality of devices holding section, and described support and described device holding section flexibly connect.
2. semiconductor cleaning apparatus as claimed in claim 1 is characterized in that, described device holding section can become the angle of 30 degree to 60 degree with horizontal plane.
3. semiconductor cleaning apparatus as claimed in claim 1 is characterized in that, the material of described support is PFA or PTEE.
4. semiconductor cleaning apparatus as claimed in claim 1 is characterized in that, the range of regulation of described pressure regulator is 0-200bar.
5. as each described semiconductor cleaning apparatus among the claim 1-4, it is characterized in that described a plurality of nozzles are divided into the plurality of nozzles group, the quantity of the quantity of described nozzle sets and described device holding section equates.
6. semiconductor cleaning apparatus as claimed in claim 5 is characterized in that, the corresponding switch of each described nozzle sets, and the nozzle that each described switch is controlled in the same nozzle sets opens or closes simultaneously.
7. the method for utilizing the described semiconductor cleaning apparatus of claim 1 to clean semiconductor devices is characterized in that, comprises the steps:
Open described process cavity, described semiconductor devices vertically is placed on the described device holding section;
Close described process cavity, adjust the interior environment of described process cavity to process environments;
Described holding section drives described semiconductor devices and tilts to certain angle;
Described nozzle begins to spray supercritical fluid in described process cavity, to clean described semiconductor devices;
After cleaning finishes, adjust the interior environment of described process cavity to conventional environment;
Open described process cavity, take out described semiconductor devices.
8. the method for cleaning semiconductor devices as claimed in claim 7 is characterized in that, described certain angle is 30 degree-60 degree.
9. the method for cleaning semiconductor devices as claimed in claim 7 is characterized in that, adjusts described process environments and be temperature greater than 32 degree, the pressure environment greater than 80bar.
10. the method for cleaning semiconductor devices as claimed in claim 7 is characterized in that, described supercritical fluid is the CO 2 fluid that has added cosolvent and/or additive.
11. the method as each described cleaning semiconductor devices among the claim 7-10 is characterized in that, the flow of the supercritical fluid on each semiconductor devices is the 0.5-2 kg p m.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102293668A CN101884983A (en) | 2010-07-16 | 2010-07-16 | Semiconductor cleaning device and method for cleaning semiconductor apparatuses |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102293668A CN101884983A (en) | 2010-07-16 | 2010-07-16 | Semiconductor cleaning device and method for cleaning semiconductor apparatuses |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280372A (en) * | 2011-09-05 | 2011-12-14 | 上海集成电路研发中心有限公司 | Method for cleaning semiconductor silicon wafer |
| CN104923534A (en) * | 2015-05-22 | 2015-09-23 | 合肥京东方光电科技有限公司 | Panel alignment film removing equipment |
| CN105834169A (en) * | 2016-06-06 | 2016-08-10 | 淮南市鸿裕工业产品设计有限公司 | Inclination-adjustable circuit board dust removal device |
| US10193103B2 (en) | 2014-09-15 | 2019-01-29 | Boe Technology Group Co., Ltd. | Organic light emitting device having protrusion formed of transparent material and display apparatus |
| CN110347016A (en) * | 2019-06-26 | 2019-10-18 | 深圳市华星光电技术有限公司 | Developing apparatus and its developing method |
| CN111618024A (en) * | 2020-06-01 | 2020-09-04 | 黑龙江金域医学检验所有限公司 | Glass slide support frame and glass slide washing method |
| CN114247685A (en) * | 2021-12-17 | 2022-03-29 | 张家港声芯电子科技有限公司 | Chip cleaning device and cleaning method |
| CN114366328A (en) * | 2022-01-09 | 2022-04-19 | 黄红 | Surgical instrument counting device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1295504A (en) * | 1998-02-25 | 2001-05-16 | 伽马精度技术公司 | Apparatus and method for cleaning semiconductor wafers |
| CN1586003A (en) * | 2001-09-13 | 2005-02-23 | 米歇尔技术公司 | Methods and apparatus for cleaning and/or treating a substrate using CO2 |
| CN1799710A (en) * | 2004-12-31 | 2006-07-12 | 财团法人工业技术研究院 | Basal plate cleaning system and method |
| CN1990126A (en) * | 2005-12-30 | 2007-07-04 | 财团法人工业技术研究院 | Supercritical carbon dioxide cleaning system and method |
| US20080087300A1 (en) * | 2006-10-16 | 2008-04-17 | Kohler Rodney W | Gas turbine compressor water wash control of drain water purge and sensing of rinse and wash completion |
| CN101447396A (en) * | 2007-11-28 | 2009-06-03 | 中国科学院微电子研究所 | Semiconductor refrigeration supercritical carbon dioxide cleaning device |
-
2010
- 2010-07-16 CN CN2010102293668A patent/CN101884983A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1295504A (en) * | 1998-02-25 | 2001-05-16 | 伽马精度技术公司 | Apparatus and method for cleaning semiconductor wafers |
| CN1586003A (en) * | 2001-09-13 | 2005-02-23 | 米歇尔技术公司 | Methods and apparatus for cleaning and/or treating a substrate using CO2 |
| CN1799710A (en) * | 2004-12-31 | 2006-07-12 | 财团法人工业技术研究院 | Basal plate cleaning system and method |
| CN1990126A (en) * | 2005-12-30 | 2007-07-04 | 财团法人工业技术研究院 | Supercritical carbon dioxide cleaning system and method |
| US20080087300A1 (en) * | 2006-10-16 | 2008-04-17 | Kohler Rodney W | Gas turbine compressor water wash control of drain water purge and sensing of rinse and wash completion |
| CN101447396A (en) * | 2007-11-28 | 2009-06-03 | 中国科学院微电子研究所 | Semiconductor refrigeration supercritical carbon dioxide cleaning device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280372A (en) * | 2011-09-05 | 2011-12-14 | 上海集成电路研发中心有限公司 | Method for cleaning semiconductor silicon wafer |
| US10193103B2 (en) | 2014-09-15 | 2019-01-29 | Boe Technology Group Co., Ltd. | Organic light emitting device having protrusion formed of transparent material and display apparatus |
| CN104923534A (en) * | 2015-05-22 | 2015-09-23 | 合肥京东方光电科技有限公司 | Panel alignment film removing equipment |
| CN105834169A (en) * | 2016-06-06 | 2016-08-10 | 淮南市鸿裕工业产品设计有限公司 | Inclination-adjustable circuit board dust removal device |
| CN110347016A (en) * | 2019-06-26 | 2019-10-18 | 深圳市华星光电技术有限公司 | Developing apparatus and its developing method |
| CN111618024A (en) * | 2020-06-01 | 2020-09-04 | 黑龙江金域医学检验所有限公司 | Glass slide support frame and glass slide washing method |
| CN114247685A (en) * | 2021-12-17 | 2022-03-29 | 张家港声芯电子科技有限公司 | Chip cleaning device and cleaning method |
| CN114247685B (en) * | 2021-12-17 | 2022-12-20 | 张家港声芯电子科技有限公司 | Chip cleaning device and cleaning method |
| CN114366328A (en) * | 2022-01-09 | 2022-04-19 | 黄红 | Surgical instrument counting device |
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Application publication date: 20101117 |