CN102318043B - 电浆蚀刻装置 - Google Patents

电浆蚀刻装置 Download PDF

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Publication number
CN102318043B
CN102318043B CN201080007916.XA CN201080007916A CN102318043B CN 102318043 B CN102318043 B CN 102318043B CN 201080007916 A CN201080007916 A CN 201080007916A CN 102318043 B CN102318043 B CN 102318043B
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CN
China
Prior art keywords
chamber
plasma
upper chamber
mentioned
lower chamber
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Active
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CN201080007916.XA
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English (en)
Chinese (zh)
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CN102318043A (zh
Inventor
山本孝
池本尚弥
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Sumitomo Precision Products Co Ltd
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Sumitomo Precision Products Co Ltd
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Publication of CN102318043A publication Critical patent/CN102318043A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
CN201080007916.XA 2009-09-15 2010-07-16 电浆蚀刻装置 Active CN102318043B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-212727 2009-09-15
JP2009212727A JP4855506B2 (ja) 2009-09-15 2009-09-15 プラズマエッチング装置
PCT/JP2010/062035 WO2011033850A1 (ja) 2009-09-15 2010-07-16 プラズマエッチング装置

Publications (2)

Publication Number Publication Date
CN102318043A CN102318043A (zh) 2012-01-11
CN102318043B true CN102318043B (zh) 2014-11-05

Family

ID=43758463

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080007916.XA Active CN102318043B (zh) 2009-09-15 2010-07-16 电浆蚀刻装置

Country Status (7)

Country Link
US (1) US20110303365A1 (https=)
EP (1) EP2479781B1 (https=)
JP (1) JP4855506B2 (https=)
KR (1) KR101224143B1 (https=)
CN (1) CN102318043B (https=)
TW (1) TW201110229A (https=)
WO (1) WO2011033850A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
KR101495288B1 (ko) * 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
GB201309583D0 (en) * 2013-05-29 2013-07-10 Spts Technologies Ltd Apparatus for processing a semiconductor workpiece
CN104241070A (zh) * 2013-06-24 2014-12-24 中微半导体设备(上海)有限公司 用于感应耦合等离子体腔室的气体注入装置
CN105336559B (zh) * 2014-08-14 2018-01-09 北京北方华创微电子装备有限公司 一种反应腔室及半导体加工设备
KR101680850B1 (ko) * 2016-06-28 2016-11-29 주식회사 기가레인 배기유로의 크기가 조절되는 플라즈마 처리 장치
CN108155080A (zh) * 2016-12-02 2018-06-12 北京北方华创微电子装备有限公司 等离子体产生装置及包括该装置的半导体设备
KR102070544B1 (ko) * 2019-04-17 2020-01-29 주식회사 기가레인 플라즈마 안테나 및 이를 포함하는 플라즈마 처리장치
JP6909824B2 (ja) * 2019-05-17 2021-07-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
CN121565767A (zh) * 2019-12-23 2026-02-24 株式会社日立高新技术 等离子处理装置
CN111508802B (zh) * 2020-04-22 2023-10-13 北京北方华创微电子装备有限公司 反应腔室及其刻蚀方法
US11521834B2 (en) * 2020-08-26 2022-12-06 Tokyo Electron Limited Plasma processing systems and methods for chemical processing a substrate
US12131888B2 (en) 2020-08-31 2024-10-29 Tokyo Electron Limited Gas cluster assisted plasma processing
CN120221364A (zh) * 2023-12-26 2025-06-27 北京北方华创微电子装备有限公司 半导体工艺设备以及刻蚀方法
CN119943711B (zh) * 2024-12-25 2025-10-17 启东新微智造科技有限公司 一种集成光电子器件制造的蚀刻机构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352049B1 (en) * 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
CN101110361A (zh) * 2006-07-19 2008-01-23 东京毅力科创株式会社 等离子体蚀刻方法及计算机可读取的存储介质

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3267690B2 (ja) * 1992-09-22 2002-03-18 マツダ株式会社 エアバッグ装置
JPH08107101A (ja) * 1994-10-03 1996-04-23 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
JPH08186095A (ja) * 1994-12-28 1996-07-16 Kawasaki Steel Corp コンタクトホールの形成方法およびエッチング装置
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
DE69942020D1 (de) * 1998-12-11 2010-04-01 Surface Technology Systems Plc Plasmabehandlungsgerät
DE10024883A1 (de) * 2000-05-19 2001-11-29 Bosch Gmbh Robert Plasmaätzanlage
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
KR100963287B1 (ko) * 2008-02-22 2010-06-11 주식회사 유진테크 기판처리장치 및 기판처리방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352049B1 (en) * 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
CN101110361A (zh) * 2006-07-19 2008-01-23 东京毅力科创株式会社 等离子体蚀刻方法及计算机可读取的存储介质

Also Published As

Publication number Publication date
JP2011066033A (ja) 2011-03-31
EP2479781B1 (en) 2014-05-14
KR20120022705A (ko) 2012-03-12
KR101224143B1 (ko) 2013-01-21
WO2011033850A1 (ja) 2011-03-24
JP4855506B2 (ja) 2012-01-18
CN102318043A (zh) 2012-01-11
EP2479781A4 (en) 2012-08-29
EP2479781A1 (en) 2012-07-25
TWI374495B (https=) 2012-10-11
TW201110229A (en) 2011-03-16
US20110303365A1 (en) 2011-12-15

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C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: Japan Tokyo Chiyoda Otemachi a chome 3 No. 2 Keidanren hall 15 order

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