TW201110229A - Plasma etching apparatus - Google Patents

Plasma etching apparatus Download PDF

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Publication number
TW201110229A
TW201110229A TW099130341A TW99130341A TW201110229A TW 201110229 A TW201110229 A TW 201110229A TW 099130341 A TW099130341 A TW 099130341A TW 99130341 A TW99130341 A TW 99130341A TW 201110229 A TW201110229 A TW 201110229A
Authority
TW
Taiwan
Prior art keywords
chamber
plasma
gas
substrate
upper chamber
Prior art date
Application number
TW099130341A
Other languages
English (en)
Chinese (zh)
Other versions
TWI374495B (https=
Inventor
Takashi Yamamoto
Naoya Ikemoto
Original Assignee
Sumitomo Precision Prod Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Prod Co filed Critical Sumitomo Precision Prod Co
Publication of TW201110229A publication Critical patent/TW201110229A/zh
Application granted granted Critical
Publication of TWI374495B publication Critical patent/TWI374495B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
TW099130341A 2009-09-15 2010-09-08 Plasma etching apparatus TW201110229A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009212727A JP4855506B2 (ja) 2009-09-15 2009-09-15 プラズマエッチング装置

Publications (2)

Publication Number Publication Date
TW201110229A true TW201110229A (en) 2011-03-16
TWI374495B TWI374495B (https=) 2012-10-11

Family

ID=43758463

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099130341A TW201110229A (en) 2009-09-15 2010-09-08 Plasma etching apparatus

Country Status (7)

Country Link
US (1) US20110303365A1 (https=)
EP (1) EP2479781B1 (https=)
JP (1) JP4855506B2 (https=)
KR (1) KR101224143B1 (https=)
CN (1) CN102318043B (https=)
TW (1) TW201110229A (https=)
WO (1) WO2011033850A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9911578B2 (en) 2009-12-03 2018-03-06 Lam Research Corporation Small plasma chamber systems and methods
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
TWI627669B (zh) * 2013-06-24 2018-06-21 Gas injection device for inductively coupled plasma chamber
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
KR101495288B1 (ko) * 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
GB201309583D0 (en) * 2013-05-29 2013-07-10 Spts Technologies Ltd Apparatus for processing a semiconductor workpiece
CN105336559B (zh) * 2014-08-14 2018-01-09 北京北方华创微电子装备有限公司 一种反应腔室及半导体加工设备
KR101680850B1 (ko) * 2016-06-28 2016-11-29 주식회사 기가레인 배기유로의 크기가 조절되는 플라즈마 처리 장치
CN108155080A (zh) * 2016-12-02 2018-06-12 北京北方华创微电子装备有限公司 等离子体产生装置及包括该装置的半导体设备
KR102070544B1 (ko) * 2019-04-17 2020-01-29 주식회사 기가레인 플라즈마 안테나 및 이를 포함하는 플라즈마 처리장치
JP6909824B2 (ja) * 2019-05-17 2021-07-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
CN121565767A (zh) * 2019-12-23 2026-02-24 株式会社日立高新技术 等离子处理装置
CN111508802B (zh) * 2020-04-22 2023-10-13 北京北方华创微电子装备有限公司 反应腔室及其刻蚀方法
US11521834B2 (en) * 2020-08-26 2022-12-06 Tokyo Electron Limited Plasma processing systems and methods for chemical processing a substrate
US12131888B2 (en) 2020-08-31 2024-10-29 Tokyo Electron Limited Gas cluster assisted plasma processing
CN120221364A (zh) * 2023-12-26 2025-06-27 北京北方华创微电子装备有限公司 半导体工艺设备以及刻蚀方法
CN119943711B (zh) * 2024-12-25 2025-10-17 启东新微智造科技有限公司 一种集成光电子器件制造的蚀刻机构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3267690B2 (ja) * 1992-09-22 2002-03-18 マツダ株式会社 エアバッグ装置
JPH08107101A (ja) * 1994-10-03 1996-04-23 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
JPH08186095A (ja) * 1994-12-28 1996-07-16 Kawasaki Steel Corp コンタクトホールの形成方法およびエッチング装置
US6352049B1 (en) * 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
DE69942020D1 (de) * 1998-12-11 2010-04-01 Surface Technology Systems Plc Plasmabehandlungsgerät
DE10024883A1 (de) * 2000-05-19 2001-11-29 Bosch Gmbh Robert Plasmaätzanlage
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
JP2008028022A (ja) * 2006-07-19 2008-02-07 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
KR100963287B1 (ko) * 2008-02-22 2010-06-11 주식회사 유진테크 기판처리장치 및 기판처리방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9911578B2 (en) 2009-12-03 2018-03-06 Lam Research Corporation Small plasma chamber systems and methods
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
TWI627669B (zh) * 2013-06-24 2018-06-21 Gas injection device for inductively coupled plasma chamber

Also Published As

Publication number Publication date
JP2011066033A (ja) 2011-03-31
EP2479781B1 (en) 2014-05-14
KR20120022705A (ko) 2012-03-12
KR101224143B1 (ko) 2013-01-21
WO2011033850A1 (ja) 2011-03-24
JP4855506B2 (ja) 2012-01-18
CN102318043B (zh) 2014-11-05
CN102318043A (zh) 2012-01-11
EP2479781A4 (en) 2012-08-29
EP2479781A1 (en) 2012-07-25
TWI374495B (https=) 2012-10-11
US20110303365A1 (en) 2011-12-15

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