CN102315347A - 发光二极管磊晶结构及其制造方法 - Google Patents
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Abstract
一种发光二极管磊晶结构,包括一硅基板及一半导体结构层,该硅基板上形成有一图案化的介质层及阻隔层,该半导体结构层与基板之间形成有多个分离的孔隙。本发明的磊晶结构由于在半导体结构层与基板之间形成有多个孔隙,二者之间由于热膨胀系数差异而导致残留的应力可被有效地缓解,从而确保磊晶结构的良品率。本发明还提供有一种制造磊晶结构的方法。
Description
技术领域
本发明涉及一种磊晶结构及其制造方法,特别是指一种发光二极管的磊晶结构及其制造方法。
背景技术
发光二极管凭借其高光效、低能耗、无污染等优点,已被应用于越来越多的场合之中,大有取代传统光源的趋势。
现有的发光二极管的芯片通常是由一蓝宝石基板及生长在蓝宝石基板上的三族氮化合物发光层所构成的。然而此种结构的芯片由于蓝宝石导热性较差,导致整体散热不佳,容易影响芯片工作的寿命。目前也有部分发光二极管芯片是采用硅基板来生长三族氮化合物发光结构,利用硅基板的高热传导率来提升芯片的散热性能。然而,该种芯片的硅基板与三族氮化合物的热膨胀系数差异较大,导致三族氮化合物在生长时容易发生磊晶品质恶化甚至于龟裂而使晶圆报废,影响芯片的良品率。
发明内容
本发明旨在提供一种良品率较高的发光二极管磊晶结构及其制造方法。
一种发光二极管磊晶结构,包括一硅基板、一半导体结构层,该硅基板上形成有一图案化的介质层及阻隔层,该半导体结构层与基板之间形成有多个分离的孔隙。
一种发光二极管磊晶结构的制造方法,包括:
提供一硅基板;
在该硅基板上形成一铝薄膜层;
在铝薄膜层上形成一图案化的光阻层;
蚀刻铝薄膜层而形成与光阻层图案相同的图案;
去除光阻层;
将硅基板置于含氧的环境下,使其表面的铝薄膜层及硅被氧化为氧化铝及氧化硅;
在氧化铝上形成一缓冲层;
在缓冲层上生长一半导体发光结构层,该半导体结构层与氧化硅隔开而形成多个孔隙。
与现有技术相比,本发明的发光二极管磊晶结构可直接在硅基板上成长,是利用氧化铝在硅基板上的形成机制,使得三族氮化物半导体结构层以现有技术即可成长于硅基板上且降低脆裂的现象。再者,硅基板与半导体结构层之间形成有多个孔隙,这些孔隙可以有效缓解由于热膨胀系数差异而导致基板与半导体结构层之间残留应力过大的问题,从而确保磊晶生长良好。
下面参照附图,结合具体实施例对本发明作进一步的描述。
附图说明
图1示出了制造本发明的发光二极管磊晶结构的第一个步骤。
图2示出了制造本发明的发光二极管磊晶结构的第二个步骤。
图3示出了制造本发明的发光二极管磊晶结构的第三个步骤。
图4示出了制造本发明的发光二极管磊晶结构的第四个步骤。
图5示出了制造本发明的发光二极管磊晶结构的第五个步骤。
图6示出了已制造完成的本发明第一实施例的发光二极管磊晶结构。
图7示出了已制造完成的本发明第二实施例的发光二极管磊晶结构。
主要组件符号说明
基板 | 100 |
铝薄膜层 | 101 |
介质层 | 101a |
光阻层 | 102 |
阻隔层 | 103 |
半导体结构层 | 104 |
凹槽 | 105 |
孔隙 | 106、106a |
具体实施方式
请参阅图6,示出了本发明的第一实施例的发光二极管的磊晶结构。该磊晶结构包括一基板100、交替分布于基板100表面上的一介质层101a及一阻隔层103及一生长于介质层101a上的半导体结构层104。该基板100由硅(Si)制成,以提升整体的散热性能。该介质层101a由氮化铝(AlN)或氧化铝(Al2O3)等金属氧化物材料制成,优选地,本实施中采用氧化铝或氮化铝作为介质层101a的形成材料。该阻隔层103的材料为氧化硅(SiO2)或氮化硅(Si3N4)。在本实施例中,该介质层101a为不连续分布于基板100表面,其用于为半导体结构层104提供生长所需的衬底。介质层101a由于不连续分布而形成多个独立的岛区及位于这些岛区之间的多个凹槽105。阻隔层103分布于介质层101a断开的凹槽105内而与介质层101a交替分布于基板100表面。该阻隔层103的厚度远小于介质层101a的厚度,优选地,阻隔层103的厚度相当于介质层101a厚度的1/5。由于氧化硅或氮化硅为多晶形,半导体结构层104难以在其表面生长,因此利用横向成长的方式,由介质层101a上慢慢生长该半导体结构层104,最后覆盖该阻隔层103。该阻隔层103可阻隔半导体结构层104的生长,以在基板100上方形成多个间隔的孔隙106。每一孔隙106的顶部呈渐缩的锥形并深入到半导体结构层104内部。该半导体结构层104包括一生长于介质层101a上的缓冲层及一生长于缓冲层上的半导体发光结构层。该半导体发光结构层为包含氮化镓(GaN)的三族氮化合物,其包括一P型第一束缚层、一N型第二束缚层及位于该第一束缚层及第二束缚层之间的主动层。该主动层可以为同质结构(homostructure)、异质结构(heterostructure)、双异质结构(double-heterostructure)、量子阱结构(Quantumwell structure)及多重量子阱(Muti-Quantum well structure)中的一种。该主动层可受电流激发而产生光子而向外辐射出特定波长的光。
由于半导体结构层104与基板100之间形成了多个孔隙106,二者之间由于热膨胀系数差异而出现的残留应力可被这些孔隙106所缓冲,从而确保磊晶层可良好地生长于基板100上。
此外,由于半导体发光结构层的底部具有多个孔隙106,该孔隙106内所包含的空气折射系数小于三族氮化合物半导体的折射系数,主动层朝向基板100发出的光因折射系数差异而向上反射,从而提升整体的出光效率。
可以理解地,该介质层101a也可连续分布于基板100表面,各凹槽105仅仅是开设于介质层101a上的开孔而未彻底隔开相邻的介质层101a。
请参阅图1-6,本发明还提供了制造上述磊晶结构的一种方法,其包括如下步骤:
1)首先提供一硅基板100;
2)在硅基板100上形成一铝薄膜层101;
3)在铝薄膜层101上形成一图案化的光阻层102;
4)蚀刻该铝薄膜层101而形成与光阻层102图案相同的图案;
5)去除光阻层102;
6)将硅基板100置于在高温富氧或富氮的条件下,使其表面的硅被氧化为氧化硅或被氮化为氮化硅形成阻隔层103,铝被氧化为氧化铝或被氮化为氮化铝形成介质层101a;
7)在氧化铝或氮化铝表面生长一缓冲层;
8)在缓冲层上生长一半导体发光层。
在步骤3)中,光阻层102的图案可依照特定需求进行设计,在本实施例中是多个彼此均匀间隔的岛状区域。该光阻层102可以为G-line正型光阻层、I-line正型光阻层、H-line正型光阻层或DUV正型光阻层。可以理解地,光阻层102还可以为与光罩设计及相关制程相适应的其他类型的光阻。该图案可为连续性图案,例如圆形、多边形或非连续图案例如长条状。
在步骤5)中,可以采用先曝光再显影的方式来去除光阻层102,具体而言,在曝光过程中所使用的光源可以为波长介于200nm-400nm之间的紫外光,在显影过程中所使用的显影液可以为包含有四甲基氢氧化铵(TMAH)的有机碱性溶液或包含有氢氧化钠(NaOH)或氢氧化钾(KOH)的无机碱性溶液。
在步骤6)中,反应温度根据铝薄膜层101的厚度及反应时间来进行调节,本实施例中优选为大于1000摄氏度。
上述铝薄膜层101可通过热蒸镀法(Thermal Evaporation;TE)、电子束蒸镀法(E-beam Evaporation;EBE)、离子溅镀法(Ion beam Sputter;IBS)、化学气相沉积法(CVD)、物理气相沉积法(PVD)及电镀法形成于基板100上。上述半导体发光层104可通过有机金属化学气相沉积法(MOCVD)、分子束磊晶法(Molecular Beam Epitaxy;MBE)或卤化物化学气相磊晶法(Hydride VaporPhase Epitaxy;HVPE)生长于缓冲层上。
本实施例中,在阻隔层103正上方距离较近的位置处没有生长半导体结构层104而形成孔隙106,而在距离较远的位置处由于半导体发光层横向生长而连接为一整体。请一并参阅图7,可以理解地,通过控制每一凹槽105的宽度与半导体结构层104的厚度的比值可使半导体结构层104在阻隔层103正上方较远的位置处也无法连接而形成多个独立的岛状磊晶层。优选地,凹槽105的宽度应当大于半导体结构层104的两倍厚度,以确保各磊晶层之间完全独立。由于这些岛状磊晶层之间彼此独立,可更有效地减小由于热膨胀系数差异而产生的应力作用。并且,这些独立的磊晶层可直接制作为发光二极管芯片。
Claims (16)
1.一种发光二极管磊晶结构,包括一硅基板及一半导体结构层,其特征在于:该硅基板上形成有一图案化的介质层及阻隔层,半导体结构层与基板之间形成有多个分离的孔隙。
2.如权利要求1所述的发光二极管磊晶结构,其特征在于:该半导体结构层包含缓冲层及半导体发光结构层。
3.如权利要求1所述的发光二极管磊晶结构,其特征在于:该介质层开设有多个凹槽,阻隔层位于这些凹槽内,所述分离的孔隙位于阻隔层上方。
4.如权利要求3所述的发光二极管磊晶结构,其特征在于:介质层连续分布于基板表面。
5.如权利要求3所述的发光二极管磊晶结构,其特征在于:介质层不连续分布于基板表面。
6.如权利要求3所述的发光二极管磊晶结构,其特征在于:半导体发光层被孔隙贯通而形成多个独立的岛状结构。
7.如权利要求3所述的发光二极管磊晶结构,其特征在于:至少一凹槽的宽度大于半导体结构层厚度的两倍。
8.如权利要求1所述的发光二极管磊晶结构,其特征在于:介质层包括一种氧化铝或氮化铝材料。
9.如权利要求1所述的发光二极管磊晶结构,其特征在于:阻隔层包括一种氧化硅或氮化硅材料。
10.一种制造发光二极管磊晶结构的方法,包括:
提供一硅基板;
在该硅基板上形成一铝薄膜层;
在铝薄膜层上形成一图案化的光阻层;
蚀刻铝薄膜层而形成与光阻层图案相同的图案;
去除光阻层;
将硅基板置于含氧或含氮的环境下,使其表面的铝薄膜层及硅被氧化或氮化,其中铝薄膜层被氧化为氧化铝或被氮化为氮化铝,硅被氧化为氧化硅或被氮化为氮化硅;
在氧化铝或氮化铝上形成一缓冲层,
在缓冲层上生长一半导体发光结构层,该半导体发光层与氧化硅或氮化硅隔开而形成多个孔隙。
11.如权利要求10所述的制造发光二极管磊晶结构的方法,其特征在于:半导体发光结构层在孔隙上方连接为一整体。
12.如权利要求10所述的制造发光二极管磊晶结构的方法,其特征在于:半导体发光结构层被孔隙贯通而形成多个独立的岛状结构。
13.如权利要求10所述的制造发光二极管磊晶结构的方法,其特征在于:氧化铝或氮化铝上开设有多个凹槽,氧化硅或氮化硅位于这些凹槽内,孔隙位于氧化硅或氮化硅上方。
14.如权利要求13所述的制造发光二极管磊晶结构的方法,其特征在于:氧化铝或氮化铝连续分布于硅基板表面。
15.如权利要求13所述的制造发光二极管磊晶结构的方法,其特征在于:氧化铝或氮化铝不连续分布于硅基板表面。
16.如权利要求15所述的制造发光二极管磊晶结构的方法,其特征在于:至少一凹槽的宽度大于半导体发光结构层厚度的两倍。
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