CN102299250A - Heat dissipation module of high power light-emitting diode (LED) and preparation method for heat dissipation module - Google Patents
Heat dissipation module of high power light-emitting diode (LED) and preparation method for heat dissipation module Download PDFInfo
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- CN102299250A CN102299250A CN2011102782480A CN201110278248A CN102299250A CN 102299250 A CN102299250 A CN 102299250A CN 2011102782480 A CN2011102782480 A CN 2011102782480A CN 201110278248 A CN201110278248 A CN 201110278248A CN 102299250 A CN102299250 A CN 102299250A
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Abstract
The invention discloses a heat dissipation module of a high power light-emitting diode (LED) and a preparation method of the heat dissipation module. The heat dissipation module of the high power LED comprises a thin heat dissipation substrate and an aluminum substrate, wherein the thin heat dissipation substrate is used for connecting a plurality of LEDs and is bonded with the aluminum substrate. The heat dissipation module of the high power LED is characterized in that: the aluminum substrate comprises an aluminum plate layer, a photoetching adhesive layer and a nano-carbon ball layer, wherein the photoetching adhesive layer is distributed on the aluminum plate layer in a saddle shape, and the nano-carbon ball layer is deposited on the photoetching adhesive layer through evaporation or vacuum sputtering.
Description
Technical field
The present invention relates to the radiating treatment technology of optical crystal, more specifically, relate to heat radiation module of a kind of great power LED and preparation method thereof.
Background technology
The heat dissipation problem of LED is more and more received people's attention now, and this is that the bad junction temperature of dispelling the heat is just high because the light decay of LED is directly relevant with its junction temperature with the life-span, and the life-span is just short.According to the A Leiniusi rule, 10 ℃ of the every reductions of temperature, the life-span can prolong 2 times.Can know that from the light decay of Cree company issue and the relation of junction temperature if junction temperature can be controlled at 65 ℃, the life-span of its light decay to 70% can be up to 100,000 hours.But the heat radiation of actual LED lamp and this requirement greatly differ from each other now, make the life-span of LED light fixture become a subject matter that influences its performance.
If junction temperature is that 25 luminous when spending are 100%, junction temperature rises to 60 when spending so, and its luminous quantity just has only 90%, and junction temperature is 100 just to drop to 80%, 140 degree when spending and just have only 70%, as seen improves heat radiation, and the control junction temperature is crucial thing.In addition, the heating of LED can make that also its spectrum moves.Colour temperature raises, and forward current increases (during the constant voltage power supply), and reverse current also increases, and thermal stress increases, and fluorescent material epoxy resin is aging to quicken.
Usually a plurality of LED crystal grain are integrated at present, obtain high-power LED, the power of this LED can reach more than the 5W.For a plurality of LED crystal grain (with eutectic (Eutectic) or cover crystalline substance (Flip-Chip) encapsulation) are linked together, need to adopt accurate printed circuit to connect.In order to obtain better heat dissipation characteristics, adopt ceramic substrate usually, this ceramic substrate is to be made of aluminium oxide and aluminium nitride.
After LED made light fixture, the heat that led chip produced always loose in air by the shell of light fixture.Because the thermal capacity of led chip is very little, if it is bad to dispel the heat, little by little the accumulation of heat will make the junction temperature of chip improve rapidly, if be operated in the state of high junction temperature over a long time, its life-span will very fast shortening.Yet these heats are wanted really to be guided out chip, arrive extraneous air, pass through a lot of approach.Specifically, the heat that led chip produced is come out from its heat dissipation metal piece, through the PCB of scolder to aluminium base, just arrives aluminium radiator by heat-conducting glue more earlier.
Under many circumstances, be made of a lot of LEDs in the LED light fixture, all these LED may be welded on the aluminium base.In addition, for example other pyrotoxins of constant-current supply are near some LED, also can obviously reduce the heat radiation of these LED and shorten its life-span.The heat dissipation design of LED must begin until entire radiator from chip, and each link all will award sufficient attention, and link design is improper all can cause serious heat dissipation problem for any one.
Summary of the invention
For overcoming above-mentioned existing defective, the present invention proposes heat radiation module of a kind of great power LED and preparation method thereof.
According to an aspect of the present invention, proposed a kind of heat radiation module of great power LED, having comprised: thin heat radiation substrate and aluminium base, wherein, the thin heat radiation substrate is used to be attached a plurality of LED, and thin heat radiation substrate and aluminium base cohere; It is characterized in that aluminium base comprises the photoresist layer that the shape of a saddle on aluminum layer, the aluminum layer distributes, the nano carbon microsphere layer that deposits by evaporation or vacuum splashing and plating on the photoresist layer.
According to a further aspect in the invention, proposed a kind of preparation method of heat radiation module of great power LED, having comprised: step 1, placed the microetch groove to carry out microetch slim aluminium base, grind afterwards and polish; Step 2, the eurymeric photoresist is printed slim aluminium base surface to the grinding and polishing, the mask blank by quartzy chromium plating places the ultraviolet photoetching system to carry out the exposure-processed process; Step 3, the development treatment of carrying out are carried out plasma etching to slim aluminium base surface, and etch processes is intact carries out the stripping processing procedure, slim aluminium base is inserted in the high temperature furnace anneal afterwards; Step 4 is taked purifying with the distillation machine to nano carbon microsphere, and the nano carbon microsphere that purifying is good is deposited on the surface of slim aluminium base by evaporation or vacuum splashing and plating.
The present invention uses general thin gauge aluminium sheet to make micro heat radiation module, increases area of dissipation, with vacuum evaporation or sputtering way with nano carbon microsphere be deposited on micro heat radiation module on, through the short annealing processing procedure, finish the making of micro heat radiation module.This structure excellent in heat dissipation effect, cost is lower, and processing procedure is easy, and the heat radiation that can be the LED industry brings huge help.
Description of drawings
Fig. 1 is the making schematic flow sheet that slim aluminium base according to the present invention is made radiator structure;
Fig. 2 is the schematic diagram according to radiator structure of the present invention;
Fig. 3 is the schematic diagram according to heat-radiating substrate of the present invention;
Fig. 4 is the combination schematic diagram according to thin heat radiation substrate of the present invention and aluminium base.
As shown in the figure, in order clearly to realize the structure of embodiments of the invention, specific structure and device have been marked in the drawings, but this only needs for signal, be not that intention limits the invention in this ad hoc structure, device and the environment, according to concrete needs, those of ordinary skill in the art can adjust these devices and environment or revise, and adjustment of being carried out or modification still are included in the scope of accompanying Claim.
Embodiment
Below in conjunction with the drawings and specific embodiments heat radiation module of a kind of great power LED provided by the invention and preparation method thereof is described in detail.
Wherein, in the following description, a plurality of different aspects of the present invention will be described, yet, for those skilled in the art, can only utilize more of the present invention or entire infrastructure or flow process are implemented the present invention.For the definition of explaining, set forth specific number, configuration and order, but clearly, do not had also can to implement the present invention under the situation of these specific detail.In other cases, in order not obscure the present invention, will no longer be described in detail for some well-known features.
Generally speaking, the present invention is with general slim aluminium base, after a series of semiconductor technology processing procedures, wherein one side at substrate is made miniature radiator structure, deposition thereon with various heat sink material (boring carbon, carbon nano-tube, nano carbon microsphere etc. as composite ceramics, composite Nano metal, graphite, diamond, class) for this structure vacuum available evaporation or sputtering way, and select nano carbon microsphere herein for use is heat sink material, and this material can be made into liquid state (aqueous solution), powder (being convenient to electrostatic spraying) or target (being convenient to semiconductor processing process uses).
Provide a kind of heat radiation module of great power LED according to embodiments of the invention, comprising: thin heat radiation substrate, aluminium base, wherein, the thin heat radiation substrate is used to be attached a plurality of LED, and thin heat radiation substrate and aluminium base cohere.Wherein, aluminium base comprises the photoresist layer that the shape of a saddle on aluminum layer, the aluminum layer distributes, the nano carbon microsphere layer that deposits by evaporation or vacuum splashing and plating on the photoresist layer.
Shown in Fig. 2,3 and 4, the thickness of aluminum layer is 0.1-0.8mm, places microetch groove (Micro etching tank) to carry out the microetch processing and pass through grinding and polishing in advance, to increase surperficial flatness.
Wherein, photoresist layer is in steel mesh wire mark mode eurymeric photoresist (Positive photo resist) to be printed aluminum layer surface to the grinding and polishing, and the mask blank (Photo-mask) with quartzy (Quartz) chromium plating places ultraviolet photoetching system (Ultravioletexposure system) to carry out the exposure-processed process again.
Wherein, the thickness of eurymeric photoresist is the 0.001-0.01 millimeter.
Wherein, nano carbon microsphere takes to be further purified (Purification) by distillation machine (Sublimation machine).The nano carbon microsphere that purifying is good is inserted the indoor evaporation that carries out of crucible of vacuum evaporation plating machine.With the vacuum splashing and plating mode with the nano carbon microsphere molecule deposition on the surface of the miniature radiator structure of slim aluminium base, thickness is the 0.00001-0.001 millimeter.
Wherein, (polyether-ether-ketone: Poly Ether Ether Ketone) bind with the aluminium base with nano carbon microsphere structure, wherein, polyether-ether-ketone itself promptly has tackness to the thin heat radiation substrate, does not need extra solid.
Another embodiment of the present invention provides a kind of preparation method of heat radiation module of great power LED, and wherein, this method comprises: step 1, place the microetch groove to carry out microetch slim aluminium base to handle, grind afterwards and polishing; Step 2, the eurymeric photoresist is printed slim aluminium base surface to the grinding and polishing, the mask blank by quartzy chromium plating places the ultraviolet photoetching system to carry out the exposure-processed process again; Step 3, the development treatment process of carrying out are carried out plasma etching to slim aluminium base surface then, and etch processes finishes, and carries out the stripping processing procedure, slim aluminium base is inserted in the high temperature furnace anneal afterwards; Step 4 is taked purifying with the distillation machine to nano carbon microsphere, and the nano carbon microsphere that purifying is good is deposited on the surface of slim aluminium base by evaporation or vacuum splashing and plating.
This method also comprises: step 5, and slim aluminium base inserted carry out cycle of annealing in the high temperature furnace, thin heat radiation substrate and the slim aluminium base with miniature radiator structure are binded.
Particularly, with reference to the accompanying drawings, in the method for the present invention, step 1, place the microetch groove to carry out microetch slim aluminium base to handle, grind afterwards and polishing.Wherein, shown in Figure 1A, with slim aluminium base (for example, thickness: 0.1-0.8mm) place microetch groove (Micro etching tank) to carry out microetch and handle.Wherein, employed micro-etching agent is the mixed liquor of aqueous sulfuric acid and aqueous hydrogen peroxide solution, its percentage by weight be micro-etching agent=＞aqueous sulfuric acid H2SO4 (aq): aqueous hydrogen peroxide solution H2O2 (aq)=＞(1-4): (4-1), microetch groove temperature is controlled in 20-60 ℃, the microetch time is controlled at 50-120 within second, and the conveyer belt speed control is at 10-60cm/sec; Enter pure water groove (D.I.water tank) afterwards, temperature (20-60 ℃), time (50-120 second); Carry out drying afterwards and remove water treatment procedure (Dehydration process), temperature (100-200 ℃), time (10-120 minute).Above step is to remove impurities such as the grease on slim aluminium base surface, oxide, impurity, in order to subsequent processes.
Wherein, slim aluminium base is ground and polishing, to increase the flatness on surface.Wherein, earlier cerium oxide abrasive slurry (Slurry) is poured on the abrasive disk of cmp (Chemical Mechanical Polishing) equipment, slim aluminium base is placed on the abrasive disk, adjust the equipment integral levelness and reach (95-100), adjust relative rotation speed (1000-20000rpm), abrasive disk temperature (20-120 ℃), milling time (1-10 minute).Change grinding pad afterwards, again the diamond polishing fluid is poured on the abrasive disk of chemical-mechanical grinding device, adjusted the equipment integral levelness and reach (98-100), adjust relative rotation speed (5000-10000rpm), abrasive disk temperature (50-150 ℃), milling time (1-10 minute).Clean pure water temperature (20-100 ℃) time (1-10 minute) with pure water afterwards, toast afterwards and dewater (temperature: 90-150 ℃; Time: 30-120 minute).
Further, step 2, the eurymeric photoresist is printed slim aluminium base surface to the grinding and polishing, the mask blank by quartzy chromium plating places the ultraviolet photoetching system to carry out the exposure-processed process again.
Shown in Figure 1B, in steel mesh wire mark mode eurymeric photoresist (Positive photo resist) is printed slim aluminium base surface to the grinding and polishing, the mask blank (Photo-mask) with quartzy (Quartz) chromium plating places ultraviolet photoetching system (Ultraviolet exposure system) to carry out the exposure-processed process again.
Wherein, the thickness of eurymeric photoresist is (0.001-0.01 millimeter), and again through preceding roasting processing procedure (Pre-baking process), this process parameters is (temperature: 80-120 ℃; Time: 10-50 minute).Mask blank (Photo-mask) with quartzy (Quartz) chromium plating places ultraviolet photoetching system (Ultraviolet exposure system) to carry out exposure-processed process (Exposure process) again, time is 1-80 second, and energy is thousand joule of 100-200.
Further, step 3, the development treatment process of carrying out are carried out plasma etching to slim aluminium base surface then, and etch processes finishes, and carries out the stripping processing procedure, slim aluminium base is inserted in the high temperature furnace anneal afterwards.Wherein, shown in Fig. 1 C, carry out development treatment process (Development process) afterwards again, the slim aluminium base after the exposure is soaked in the sodium hydrate aqueous solution that weight percent concentration is 3-10 (3-10wt%) (NaOH) (aq), temperature is 50-80 ℃, and the time is 1-10 minute.Afterwards with pure water cleaning temperature (20-100 ℃), the time (1-10 minute).
Toast afterwards and dewater and (temperature: 90-150 ℃ of the roasting processing procedure in back; Time: 30-120 minute), with plasma etching (Plasma etching) etching is carried out on slim aluminium base surface again, vacuum degree is the 0.001-0.000001 millimetres of mercury, and the time is 1-10 minute, and using gases is argon gas (purity is 99.999%).
Treat that etching treatment procedure finishes, promptly carry out stripping processing procedure (Stripping process), slim aluminium base after the etching is soaked in the sodium hydrate aqueous solution that weight percent concentration is 5-10 (5-10wt%) (NaOH) (aq), temperature is 70-100 ℃, time is 3-15 minute, with pure water cleaning temperature (20-100 ℃) time (1-10 minute), toast afterwards and dewater (temperature: 90-150 ℃ afterwards; Time: 30-120 minute).
Shown in Fig. 1 D, be the internal stress (Internal stress) of eliminating the miniature radiator structure of slim aluminium base, slim aluminium base need be inserted and carry out cycle of annealing in the high temperature furnace, the time was controlled within 30-120 minute, and temperature is controlled within 200-400 ℃.
(Plasma etching) carries out microetch to slim aluminium base surface with plasma etching, vacuum degree is the 0.001-0.000001 millimetres of mercury, time is 20-120 second, using gases is argon gas (purity is 99.999%), increases the surface mount (Surface adhesiveness) of the miniature radiator structure of slim aluminium base with this.
Further, step 4 is taked purifying with the distillation machine to nano carbon microsphere, and the nano carbon microsphere that purifying is good is deposited on the surface of slim aluminium base by evaporation or vacuum splashing and plating.
(Sublimation machine) takes to be further purified (Purification) to nano carbon microsphere with the distillation machine, and temperature is 700-1000 ℃, and the time is 30-100 minute.The nano carbon microsphere that purifying is good is inserted the indoor evaporation that carries out of crucible of vacuum evaporation plating machine, time 1-10 minute; Thickness is the 0.000015-0.001 millimeter, and vacuum degree is the 0.001-0.000001 millimetres of mercury, temperature: 100-1200 ℃.
Shown in Fig. 1 E, if in the vacuum splashing and plating mode, carry out vacuum splashing and plating (Vacuum sputtering) processing procedure after then will putting into low temperature level magnetic control sputtering plating machine through the slim aluminium base of gentle plasma surface treatment.And target (Target) is a nano carbon microsphere, (temperature (80-150 ℃) need dewater before target uses, time (30-120 minute)), vacuum degree is the 0.001-0.000001 millimetres of mercury, time is 1-10 minute, using gases is argon gas (purity is 99.999%), with the momentum branch mode with the nano carbon microsphere molecule deposition on the surface of the miniature radiator structure of slim aluminium base, thickness is the 0.00001-0.001 millimeter.
This method also comprises: step 5, and slim aluminium base inserted carry out cycle of annealing in the high temperature furnace, thin heat radiation substrate and the slim aluminium base with miniature radiator structure are binded.Shown in Fig. 1 F, eliminate the internal stress (Internal stress) of the miniature radiator structure of slim aluminium base, slim aluminium base need be inserted and carry out cycle of annealing in the high temperature furnace, the time was controlled within 30-120 minute, and temperature is controlled within 200-400 ℃.
Shown in Fig. 2,3 and 4, with thin heat radiation substrate (polyether-ether-ketone: Poly Ether Ether Ketone) bind with slim aluminium base with miniature radiator structure, wherein, polyether-ether-ketone itself promptly has tackness, do not need extra solid, so promptly finish the making of slim aluminium base radiating module, can directly apply among the LED bulb lamp.
It should be noted that at last, above embodiment is only in order to describe technical scheme of the present invention rather than the present technique method is limited, the present invention can extend to other modification, variation, application and embodiment on using, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (10)
1. the heat radiation module of a great power LED comprises: thin heat radiation substrate and aluminium base, and wherein, the thin heat radiation substrate is used to be attached a plurality of LED, and thin heat radiation substrate and aluminium base cohere; It is characterized in that aluminium base comprises the photoresist layer that the shape of a saddle on aluminum layer, the aluminum layer distributes, the nano carbon microsphere layer that deposits by evaporation or vacuum splashing and plating on the photoresist layer.
2. heat radiation module according to claim 1, wherein, the thickness of aluminum layer is 0.1-0.8mm, carries out the microetch processing in advance and pass through grinding and polishing.
3. heat radiation module according to claim 1, wherein, photoresist layer is the eurymeric photoresist, prints aluminum layer surface to the grinding and polishing in steel mesh wire mark mode, the thickness of eurymeric photoresist is the 0.001-0.01 millimeter.
4. heat radiation module according to claim 1, wherein, the thickness of nano carbon microsphere is the 0.00001-0.001 millimeter; The thin heat radiation substrate is a polyether-ether-ketone, binds with the aluminium base with nano carbon microsphere.
5. the preparation method of the heat radiation module of a great power LED comprises:
Step 1, place the microetch groove to carry out microetch slim aluminium base, grind afterwards and polish;
Step 2, the eurymeric photoresist is printed slim aluminium base surface to the grinding and polishing, the mask blank by quartzy chromium plating places the ultraviolet photoetching system to carry out the exposure-processed process;
Step 3, the development treatment of carrying out are carried out plasma etching to slim aluminium base surface, and etch processes is intact carries out the stripping processing procedure, slim aluminium base is inserted in the high temperature furnace anneal afterwards;
Step 4 is taked purifying with the distillation machine to nano carbon microsphere, and the nano carbon microsphere that purifying is good is deposited on the surface of slim aluminium base by evaporation or vacuum splashing and plating.
6. preparation method according to claim 5, wherein, in the step 1, the thickness of slim aluminium base is 0.1-0.8mm; Employed micro-etching agent is the mixed liquor of aqueous sulfuric acid and aqueous hydrogen peroxide solution.
7. preparation method according to claim 5, wherein, in the step 2, in steel mesh wire mark mode the eurymeric photoresist is printed slim aluminium base surface to the grinding and polishing, the thickness of eurymeric photoresist is the 0.001-0.01 millimeter, and the time of exposure-processed is 1-80 second, and energy is thousand joule of 100-200.
8. preparation method according to claim 5 wherein, in the step 4, takes purifying with the distillation machine to nano carbon microsphere, and temperature is 700-1000 ℃, and the time is 30-100 minute; The nano carbon microsphere that purifying is good is inserted the indoor evaporation that carries out of crucible of vacuum evaporation plating machine, time 1-10 minute; Nano carbon microsphere thickness is the 0.000015-0.001 millimeter, and vacuum degree is the 0.001-0.000001 millimetres of mercury, temperature: 100-1200 ℃.
9. preparation method according to claim 5, wherein, in the step 4, carry out the vacuum splashing and plating processing after will putting into low temperature level magnetic control sputtering plating machine through the aluminium base of gentle plasma surface treatment, target is a nano carbon microsphere, and vacuum degree is the 0.001-0.000001 millimetres of mercury, time is 1-10 minute, using gases is an argon gas, with the momentum branch mode with the nano carbon microsphere molecule deposition on the surface of aluminium base, nano carbon microsphere thickness is the 0.00001-0.001 millimeter.
10. preparation method according to claim 5, wherein, this method also comprises: step 5, slim aluminium base inserted carry out cycle of annealing in the high temperature furnace, thin heat radiation substrate and the slim aluminium base with miniature radiator structure are binded.
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| CN102447052A (en) * | 2010-10-15 | 2012-05-09 | 广东昭信灯具有限公司 | LED heat-dissipation substrate and a manufacturing method thereof |
| CN107240594A (en) * | 2016-03-28 | 2017-10-10 | 三星电子株式会社 | Light emitting diode device and its manufacture method |
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| CN107240594B (en) * | 2016-03-28 | 2023-07-04 | 三星电子株式会社 | Light emitting diode device and method of manufacturing the same |
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Application publication date: 20111228 |