CN102332511A - Light-emitting diode (LED) radiating substrate based on micro heat pipe device and method for manufacturing LED radiating substrate - Google Patents
Light-emitting diode (LED) radiating substrate based on micro heat pipe device and method for manufacturing LED radiating substrate Download PDFInfo
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- CN102332511A CN102332511A CN2011103040350A CN201110304035A CN102332511A CN 102332511 A CN102332511 A CN 102332511A CN 2011103040350 A CN2011103040350 A CN 2011103040350A CN 201110304035 A CN201110304035 A CN 201110304035A CN 102332511 A CN102332511 A CN 102332511A
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Abstract
A micro heat pipe base material is manufactured by a micro-electro-mechanical process and assembled together with various light-emitting diode (LED) radiating substrates, or embedded into an LED radiating substrate in an integrated forming mode in the process of manufacturing a substrate, so that LED light attenuation can be reduced, and the radiating cost of an LED lamp is reduced. The invention provides a method for manufacturing an LED radiating substrate based on a micro heat pipe device, which comprises the following steps of: manufacturing a metallic shield; manufacturing the LED radiating substrate; manufacturing the micro heat pipe device made from the micro heat pipe base material; and connecting the LED radiating substrate and the micro heat pipe device made from the micro heat pipe base material. The invention has the advantages that: the LED radiating substrate has a reasonable design, a compact structure and a good radiating effect and is easy to manufacture; and heat generated when an ultrahigh-power LED works can be quickly transferred, and the radiating requirement of a high-power LED lamp can be effectively met.
Description
Technical field
The present invention relates generally to LED heat-radiating substrate field, more specifically, relates to a kind of LED heat-radiating substrate and manufacturing approach thereof based on miniature heat pipe device.
Background technology
Light-emitting diode is a kind of injection electroluminescence device, is processed by the mZV compounds of group.Under the extra electric field effect, the radiation recombination in electronics and hole and the electricity that takes place cause effect 10% one 15% of energy are converted into luminous energy, and the vibration of the lattice of radiationless compound generation is a heat energy with all the other Conversion of energy of 85% one 90%.Different with traditional illuminating device, do not comprise infrared part in the luminescent spectrum of white light LEDs, so its heat can not rely on radiation to discharge.
For single led, if concentrating in the small-sized chip, heat can not effectively shed, then can cause chip temperature to raise, the non-uniform Distribution, chip light emitting efficient and the fluorescent material that cause thermal stress swash penetrates decrease in efficiency.Research shows, when temperature surpasses certain value, the failure rate of device will be index law and rise 2 ℃ of the every risings of component temperature, reliability decrease 10%.
In order to guarantee the life-span of device, generally require pn knot junction temperature below 110 ℃.Along with the temperature rise of Pn knot, red shift will take place in the emission wavelength of white light LED part.Statistics shows, under 100 ℃ temperature, wavelength can red shift 4-9nm, thereby causes YAG fluorescent material absorptivity to descend, and total luminous intensity can reduce, white light colourity variation.Near room temperature, 1 ℃ of the every rising of temperature, the luminous intensity of LED can correspondingly reduce about 1%.
When a plurality of LED dense arrangement were formed white lumination system, the dissipation problem of heat was more serious.Therefore solve heat dissipation problem and become the prerequisite that power-type LED is used.
Summary of the invention
For overcoming above-mentioned defective of the prior art; Technology that the present invention utilizes micro electronmechanical (MEMS) is made miniature heat pipe base material (Micro heat pipe), and with various LED heat-radiating substrate (like metal, pottery; Macromolecule etc.) assemble; Or in the substrate manufacture process, adopt one-body molded mode and be embedded in the LED heat-radiating substrate, so can reduce the LED light decay, and reduce the heat radiation cost of LED light fixture.
At first, the present invention provides a kind of LED heat-radiating substrate manufacturing approach based on miniature heat pipe device on the one hand, and this method may further comprise the steps: step 1: make metallic shield; Step 2: make the LED heat-radiating substrate; Step 3: the miniature heat pipe device of making miniature heat pipe base material; Step 4: the LED heat-radiating substrate is engaged with the miniature heat pipe device of miniature heat pipe base material; In said step 3, may further comprise the steps: the plasma etching processing procedure is carried out with the base material of miniature heat pipe device in (31); (32) negative photoresist is printed to the base material of miniature heat pipe device through metallic shield; (33) make public, develop afterwards; (34) carry out reactive ion etching again and carry out etching respectively the base material of miniature heat pipe device is two-sided; (35) afterwards, carry out the stripping processing procedure; (36) carry out the plasma etching processing procedure.
The present invention provides a kind of manufacturing approach of miniature heat pipe device on the other hand, said method comprising the steps of: the plasma etching processing procedure is carried out with the base material of miniature heat pipe device in (1); (2) negative photoresist is printed to the base material of miniature heat pipe device through metallic shield; (3) make public, develop afterwards; (4) carry out reactive ion etching again and carry out etching respectively the base material of miniature heat pipe device is two-sided; (5) afterwards, carry out the stripping processing procedure; (6) carry out the plasma etching processing procedure.
The present invention also provides a kind of LED heat-radiating substrate based on miniature heat pipe device; Adopt the miniature heat pipe of the manufacturing approach manufacturing of miniature heat pipe device recited above to have bilateral structure; Its one side structure is miniature radiating fin, and the another side structure is miniature heat pipe.
That beneficial effect of the present invention is is reasonable in design, compact conformation, be easy to make, good heat dissipation effect; The heat that sends in the time of can migrating out super-high-power LED work rapidly can satisfy the needs that high-power LED lamp dispels the heat effectively, can make ultra-high power LED street lamp realize large-scale industrialization production; Simultaneously, can effectively reduce the LED light decay, and reduce the heat radiation cost of LED light fixture.
Description of drawings
Fig. 1 is a LED heat-radiating substrate sketch map;
Fig. 2 is miniature heat pipe device sketch map;
Fig. 3 is based on the Facad structure figure of the LED heat-radiating substrate of miniature heat pipe device.
Fig. 4 a-Fig. 4 g is the relevant processing procedure sketch map of metallic shield (Metal mask);
Fig. 5 is that the metallic composite coiled material of LED heat-radiating substrate nanosized copper aluminium or gold and silver is eliminated internal stress processing procedure sketch map;
Fig. 6 is the little erosion processing procedure of the metallic composite coiled material sketch map of LED heat-radiating substrate nanosized copper aluminium or gold and silver;
Fig. 7 a-Fig. 7 d is the processing procedure sketch map of the heat-radiating substrate of high thermal conductivity coefficient;
Fig. 8 is that the base material of miniature heat pipe device is eliminated internal stress processing procedure sketch map;
Fig. 9 a-Fig. 9 f is the little erosion processing procedure of the miniature radiator structure sketch map of the base material of miniature heat pipe device;
Figure 10 is that miniature radiating fin (Micro heat sink) attaches polypropylene diaphragm processing procedure sketch map;
Figure 11 is miniature heat pipe filling radiator liquid processing procedure sketch map;
Figure 12 a-Figure 12 c is that miniature heat pipe device ultrasonic waves eutectic engages (Ultrasonic eutectic bonding) processing procedure sketch map;
Embodiment
Below in conjunction with accompanying drawing and specific embodiment a kind of LED heat-radiating substrate and manufacturing approach thereof based on miniature heat pipe provided by the invention is described in detail.Here do simultaneously is that more detailed in order to make embodiment, following embodiment be the best, preferred embodiment, also can adopt other alternative and implements for some known technology those skilled in the art with explanation.
At first; According to the first embodiment of the present invention a kind of LED heat-radiating substrate based on miniature heat pipe device is provided; This heat-radiating substrate adopts the method for following second embodiment to make miniature heat pipe with nano-electromechanical (MEMS), and assembles with the LED heat-radiating substrate, and its structure comprises: as shown in Figure 1: the LED heat-radiating substrate is (like metal; Pottery, macromolecule etc.): this heat-radiating substrate back side is carried out the coat of metal and is handled.As shown in Figure 2: miniature heat pipe device: this miniature heat pipe device has bilateral structure, and its one side structure is miniature radiating fin (Micro heats ink), and the another side structure is miniature heat pipe (Micro heat pipe).This Facad structure figure based on the LED heat-radiating substrate of miniature heat pipe device is as shown in Figure 3; The LED heat-radiating substrate that the back side is carried out coat of metal processing places on the tape handler; Carry out the precision optics contraposition with the miniature heat pipe device of miniature heat pipe base material; Afterwards, cut and seal (Laser cutting and fusion) again with pulse laser.Afterwards; Carry out hot ultrasonic waves eutectic processing procedure (Heat ultrasonic eutectic process) again; The LED heat-radiating substrate is carried out the ultrasonic waves eutectic with the miniature heat pipe device of miniature heat pipe base material engage, relevant process parameter is following: temperature: 180-270 ℃; Time: 1-240 second; Power supply supply output: 20-50MHz.So can accomplish miniature heat pipe device in the combination of LED heat-radiating substrate.
The second embodiment of the present invention provides a kind of manufacturing approach of the LED heat-radiating substrate based on miniature heat pipe device, and this method may further comprise the steps: at first make metallic shield; Make the LED heat-radiating substrate then; Then make the miniature heat pipe device of miniature heat pipe base material; At last the LED heat-radiating substrate is engaged with the miniature heat pipe device of miniature heat pipe base material; Wherein in the miniature heat pipe device of making miniature heat pipe base material, may further comprise the steps: the base material of miniature heat pipe device is carried out the plasma etching processing procedure; Negative photoresist is printed to the base material of miniature heat pipe device through metallic shield; Make public, develop afterwards; Carry out reactive ion etching again and carry out etching respectively the base material of miniature heat pipe device is two-sided; Afterwards, carry out the stripping processing procedure; Carry out the plasma etching processing procedure at last.
Can preferably adopt following method to carry out the manufacturing of metallic shield in a second embodiment.Shown in Fig. 4 a-Fig. 4 g; At first (1) uses electron-beam direct writing (Electron Beam direct writing) mode to carry out pattern (Pattern) making in the chromium layer (Chromium layer) of quartzy (Quartz) mask blank (Photo mask), and the chromium metal layer thickness is the 10-30 nanometer; (2) mask blank (Photo mask) is placed DUV exposure system (Deep Ultraviolet Exposure System), and to being coated with negative photoresist (Negative photo resist) SU-8; Thickness is the 0.6-2.0 micron, uses vacuum rotary coating mode, and its rotating speed is 5000-10000rpm; Preceding roasting temperature is 70-120 ℃; Time is that 20-50 minute optical grade corrosion resistant plate carries out the DUV exposure manufacture process, and its exposure energy is 500-1000KJ, and the time for exposure is 0.1-0.8m s; Developing manufacture process is carried out in (3) afterwards, its naoh concentration: 3-8%, developing time: 10-30 second, temperature: 25-50 ℃; (4) carry out reactive ion etching again the optical grade corrosion resistant plate is carried out etching, its time is 10-50 second; (5) (the ferronickel ratio is 7-9: 3-1) carry out the electroforming processing procedure, its temperature is 45-70 ℃ with nickel-iron alloy plating liquid afterwards; The stripping processing procedure is carried out in (6) afterwards, its naoh concentration: 5-10%, developing time: 50-80 second, temperature: 50-80 ℃; (7) make the relevant processing procedure of metallic shield (Metal mask) to turn over the mould mode again.
Simultaneously, can preferably adopt following method to carry out the manufacturing of LED heat-radiating substrate in a second embodiment.As shown in Figure 5; With the metallic composite of nanosized copper aluminium or gold and silver with powder metallurgy and after calendering made coiled material place on the tape handler, the tape handler transporting velocity is the 1-20 cel, and conveyer belt all fronts its vacuum degree of vacuum is the 0.001-0.000001 Bristol; Coiled material is adsorbed on the antistatic conveyer belt fully; And conveyer belt has a plurality of subregions, is preferable over the original internal stress that coiled material is eliminated in five to eight zone heating of branch, and is preferred; When being 8 when regional, each regional temperature and time parameter are following: first district's temperature is 200-300 ℃; Time is 5-20 minute; Second district's temperature is 300 ℃; Time is 5-20 minute; The 3rd district's temperature is 300-400 ℃; Time is 10-20 minute; The 4th district's temperature is 400 ℃; Time is 10-20 minute; The 5th district's temperature is 400-300 ℃; Time is 10-120 second; The 6th district's temperature is 300 ℃; Time is 10-20 minute; The SECTOR-SEVEN temperature is 300-150 ℃; Time is 10-30 minute; The Section Eight temperature is 150-50 ℃; Time is 10-50 minute.
As shown in Figure 6, the coiled material of eliminating original internal stress is placed on another tape handler, the tape handler transporting velocity is the 1-20 cel, and conveyer belt all fronts vacuum, its vacuum degree is that the 0.001-0.000001 Bristol is adsorbed in coiled material on the antistatic conveyer belt fully.With coiled material, its thickness: 0.1-0.8mm places little erosion groove (Micro etching tank), and it uses the mixed liquor of micro-etching agent as aqueous sulfuric acid and aqueous hydrogen peroxide solution, and its percentage by weight is a micro-etching agent: aqueous sulfuric acid H
2SO
4(aq): aqueous hydrogen peroxide solution H
2O
2(aq)=(1: 4)-(4: 1), little erosion groove temperature is controlled in 20-60 ℃, and little erosion time is controlled at 50-120 within second, and the conveyer belt speed control gets into the pure water groove afterwards at 10-60cm/sec, and temperature is 20-60 ℃; Time is 50-120 second, carries out the drying processing procedure (Dehydration process) that dewaters afterwards, and temperature is 100-200 ℃; Time is 10-120 minute.Above step is for removing impurity and increase tacknesss such as the surperficial grease of coiled material, oxide, impurity, in order to successive process.
Shown in Fig. 7 a-7d, (1) uses roller coating (Roll coating) mode that photo-sensistive polyimide (Photosensitive polyimide) is coated on the coiled material afterwards, and wheel speeds is 100-200rpm; Its thickness of photo-sensistive polyimide is the 1-20 micron; Preferred afterwards, carry out the DUV exposure manufacture process with the DUV exposure system, its exposure energy is 500-1000KJ, the time for exposure is 0.1-0.8ms; Preferred afterwards; Carry out developing manufacture process, its naoh concentration: 3-8%, developing time: 10-30 second; Temperature: 25-50 ℃, (2) to carry out nanometer electro-coppering processing procedure (Nanometer Copper electroplating) process parameter following: pH value: 1-7 afterwards; Temperature: the 20-100 ℃ time: 10-120 minute, afterwards can be preferred, clean processing procedure, its time: 1-20 minute through pure water; Temperature: 10-80 ℃; (3) for eliminating the internal stress (Internal stress) that nanometer electro-coppering processing procedure is produced, need to place through the coiled material behind the electro-coppering processing procedure to heat-treat on the winding base, concrete parameter is following: first section intensification is warming up to 50-120 ℃ by room temperature; Heating rate: 5-30 ℃/minute, second section constant temperature keep 50-120 ℃ lasting 5-20 minute, the 3rd section intensification is warming up to 200-250 ℃ by 50-120 ℃; Heating rate: 5-30 ℃/minute, the 4th section constant temperature keep 200-250 ℃ lasting 5-20 minute, the 5th section cooling is cooled to 150-200 ℃ by 200-250 ℃; Rate of temperature fall: 5-30 ℃/minute, the 6th section constant temperature keep 150-200 ℃ lasting 5-20 minute, the 7th section cooling is cooled to 100-150 ℃ by 150-200 ℃; Rate of temperature fall: 5-30 ℃/minute, the 8th section constant temperature keep 100-150 ℃ lasting 5-20 minute, the 9th section cooling is cooled to 50-100 ℃ by 100-150 ℃; Rate of temperature fall: 5-30 ℃/minute, the tenth section constant temperature keep 50-100 ℃ lasting 5-20 minute, naturally cool to room temperature afterwards, (4) are carried out electrogilding processing procedure (Gold electroplating) more afterwards, process parameter is following: pH value: 1-7; Temperature: the 20-100 ℃ time: 10-120 minute, preferred afterwards, clean processing procedure, its time: 1-20 minute through pure water; Temperature: 10-80 ℃, so can accomplish the making of the LED heat-radiating substrate of high thermal conductivity coefficient.
The relevant processing procedure of miniature heat pipe device
Before making miniature heat pipe device, can preferably select for use method heating as shown in Figure 8 to eliminate the original internal stress of coiled material, at first, with the nanosized copper aluminium composite material; The nanoscale class is bored material with carbon element; The nanoscale diamond material; The nano level metal graphite composite material; Associated metal composite materials such as nano level metal ceramic composite with powder metallurgy and after rolling made coiled material place on the tape handler; The tape handler transporting velocity is the 1-20 cel; And conveyer belt all fronts vacuum, its vacuum degree is that the 0.001-0.000001 Bristol is adsorbed in coiled material on the antistatic conveyer belt fully, and conveyer belt has a plurality of subregions; Be preferable over five to eight zone heating of branch and eliminate the original internal stress of coiled material; Preferred, when being 8 when regional, each regional temperature and time parameter are following: first district's temperature is 200-300 ℃; Time is 5-20 minute; Second district's temperature is 300 ℃; Time is 5-20 minute; The 3rd district's temperature is 300-400 ℃; Time is 10-20 minute; The 4th district's temperature is 400 ℃; Time is 10-20 minute; The 5th district's temperature is 400-300 ℃; Time is 10-120 second; The 6th district's temperature is 300 ℃; Time is 10-20 minute; The SECTOR-SEVEN temperature is 300-150 ℃; Time is 10-30 minute; The Section Eight temperature is 150-50 ℃; Time is 10-50 minute.
The concrete steps of miniature heat pipe device of making miniature heat pipe base material are following; Shown in Fig. 9 a-9f; (1) base material (metal, pottery, macromolecule) with uncut miniature heat pipe device carries out two-sided (Double sided) plasma etching (Plasma etching) processing procedure, and relevant parameter is following: vacuum degree is the 0.001-0.000001 Bristol; Time is 10-240 second; Gas is argon gas (purity is 99.999%), carries out the processing procedure of little erosion and increase tackness with the base material of accomplishing miniature heat pipe device; (2) with negative photoresist (Negative photo resist), its model is SU-8; Thickness is the 0.6-2.0 micron, and preceding roasting temperature is 70-120 ℃, and the time is 20-50 minute, pour in the metallic shield, and with on high-precision automatic press (making the printing machine that the flip chip projection is used) printing to the base material of miniature heat pipe device.And the process parameter of printing machine is following: the scraper down force pressure is every square centimeter of 0.01-100g, and vacuum degree is the 0.001-0.000001 Bristol, and the scraper feed velocity is the 0.01-1 cel, and it is the 0.01-1 cel that scraper advances back cutter speed; Preferred afterwards, (3) through two metallic shields are to the two-sided DUV exposure manufacture process that carries out respectively of the base material of miniature heat pipe device up and down, exposure energy is 500-1000KJ, and the time for exposure is 0.1-0.8ms; Preferred afterwards, developing manufacture process is carried out in (4), its naoh concentration: 3-8%, developing time: 10-30 second, temperature: 25-50 ℃; (5) carry out reactive ion etching again and carry out etching respectively, its time: 10-50 second the base material of miniature heat pipe device is two-sided; The stripping processing procedure is carried out in (6) afterwards, its naoh concentration: 5-10%, developing time: 50-80 second, temperature: 50-80 ℃; The pure water processing procedure is carried out in (7) afterwards, and the base material of miniature heat pipe device is cleaned, and its temperature is 20-80 ℃; Time is 2-10 minute; The plasma etching processing procedure is carried out in (8) afterwards, and relevant parameter is following: vacuum degree is the 0.001-0.000001 Bristol; Time is 10-240 second; Gas is argon gas (purity is 99.999%), to accomplish the processing procedure that the miniature radiator structure of miniature heat pipe device substrate is carried out little erosion and increase tackness.
Shown in figure 10; The base material that will have the miniature heat pipe device of bilateral structure places on the tape handler; Wherein miniature radiating fin (Micro heat sink) is partly with polypropylene (Polypropylene) coating, and the tape handler transporting velocity is the 1-20 cel, and conveyer belt all fronts vacuum; Its vacuum degree is the 0.001-0.000001 Bristol, and coiled material is adsorbed on the antistatic conveyer belt fully.Afterwards, shown in figure 11, the base material that will have the miniature heat pipe device of bilateral structure again places on the tape handler, wherein miniature heat pipe (Micro heat pipe) partly with fillings such as pure water, zeolite, phase-change constant-temperature materials among miniature heat pipe.
At last; Shown in Figure 12 a-12c, the LED heat-radiating substrate that the coat of metal handles is carried out at the back side place on the tape handler, carry out the precision optics contraposition with the miniature heat pipe device of miniature heat pipe base material; Afterwards; Cut and seal (Laser cutting and fusion) again with pulse laser, concrete parameter is following: Nd:YAG pulse laser, pulse duration 10ns; Optical maser wavelength is 266-1064nm; Energy is 0.1-1.0J/pulse.Afterwards; Carry out hot ultrasonic waves eutectic processing procedure (Heat ultrasonic eutectic process) again; The LED heat-radiating substrate and the miniature heat pipe device of miniature heat pipe base material are carried out the ultrasonic waves eutectic engage (Ultrasonic eutectic bonding), relevant process parameter is following: temperature: 180-270 ℃; Time: 1-240 second; Power supply supply output: 20-50MHz.So can accomplish miniature heat pipe device in the application of LED heat-radiating substrate.
The structure that need to prove miniature heat pipe device and LED heat-radiating substrate in above-mentioned every width of cloth accompanying drawing is only as schematically, and is slightly different.Simultaneously, comprise in the step of each in specific embodiment some preferably, more detailed implementation step.But be not steps necessary.
What should explain at last is; Above embodiment is only in order to describe technical scheme of the present invention rather than the present technique method is limited; The present invention can extend to other modification, variation, application and embodiment on using, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (17)
1. LED heat-radiating substrate manufacturing approach based on miniature heat pipe device comprises:
Step 1 is made metallic shield;
Step 2 is made the LED heat-radiating substrate;
Step 3 is made miniature heat pipe device;
Step 4 engages the LED heat-radiating substrate with miniature heat pipe device;
It is characterized in that, in said step 3, may further comprise the steps:
(31) base material with miniature heat pipe device carries out plasma etching;
(32) offset printing is brushed to base material;
(33) make public, develop;
(34) carry out reactive ion etching again;
(35) afterwards, carry out the stripping processing procedure;
(36) carry out the plasma etching processing procedure.
2. the method for claim 1 is characterized in that, also comprises in the said step 3: when making the base material of miniature heat pipe device, the coiled material that metallic composite is made places on the tape handler, and conveyer belt has a plurality of subregions.
3. according to claim 1 or claim 2 method; It is characterized in that; Also comprise in the said step 3: after the plasma etching processing procedure was carried out in said (36), the miniature heat pipe device substrate that will have bilateral structure placed on the tape handler, and wherein miniature radiating fin is partly with the polypropylene coating.
4. method as claimed in claim 3 is characterized in that, also comprises in the said step 3: with pure water, zeolite or phase-change constant-temperature material filling among miniature heat pipe.
5. the method for claim 1 is characterized in that, said glue is negative photoresist.
6. the method for claim 1 is characterized in that, may further comprise the steps in the said step 1:
(11) the chromium layer in quartzy mask blank carries out the pattern making;
(12) to optical grade stainless steel board to explosure;
(13) carry out developing manufacture process;
(14) the optical grade corrosion resistant plate is carried out etching;
(15) carry out the electroforming processing procedure;
(16) carry out the stripping processing procedure;
(17) make metallic shield to turn over the mould mode again.
7. like claim 1 or 6 described methods, it is characterized in that, may further comprise the steps in the said step 2:
(21) photo-sensistive polyimide is coated on the coiled material of heat-radiating substrate;
(22) make public;
(23) develop;
(24) carry out the nanometer electro-coppering;
(25) heat-treat;
(26) carry out the electrogilding processing procedure again.
8. like claim 1 or 6 described methods, it is characterized in that, in said step 4, may further comprise the steps:
(41) LED heat-radiating substrate and miniature heat pipe device are carried out optical registration;
(42) cut and seal;
(43) the LED heat-radiating substrate being carried out the ultrasonic waves eutectic with miniature heat pipe device engages.
9. the manufacturing approach of a miniature heat pipe device comprises:
(1) base material with miniature heat pipe device carries out the plasma etching processing procedure;
(2) offset printing is brushed to the base material of miniature heat pipe device;
(3) make public, develop;
(4) carry out reactive ion etching again;
(5) afterwards, carry out the stripping processing procedure;
(6) carry out the plasma etching processing procedure.
10. method as claimed in claim 9 is characterized in that: also be included in the said step 3 when making miniature heat pipe device substrate, the coiled material that metallic composite is made places on the tape handler, and conveyer belt has a plurality of subregions.
11. like claim 9 or 10 described methods; It is characterized in that: also be included in said (6) in the said step 3 and carry out after the plasma etching processing procedure; The miniature heat pipe device substrate that will have bilateral structure places on the tape handler, and wherein miniature radiating fin is partly with the polypropylene coating.
12. method as claimed in claim 11 is characterized in that, said method also comprises with pure water, zeolite, phase-change constant-temperature material filling among miniature heat pipe.
13. LED heat-radiating substrate based on miniature heat pipe device; It is characterized in that; The miniature heat pipe that the said arbitrary method of employing such as claim 9-12 is made has bilateral structure, and its one side structure is miniature radiating fin, and the another side structure is miniature heat pipe; Through ultrasonic waves the LED heat-radiating substrate is engaged with miniature heat pipe device eutectic.
14. LED heat-radiating substrate as claimed in claim 13 is characterized in that, this heat-radiating substrate back side is carried out the coat of metal and is handled.
15., it is characterized in that said miniature radiating fin is partly with the polypropylene coating like claim 13 or 14 described LED heat-radiating substrates.
16. LED heat-radiating substrate as claimed in claim 15 is characterized in that, wherein miniature heat pipe partly with pure water, zeolite, phase-change constant-temperature material filling among miniature heat pipe.
17. LED heat-radiating substrate as claimed in claim 15 is characterized in that the base material of said miniature heat pipe device is selected the nanosized copper aluminium composite material for use; The nanoscale class is bored material with carbon element; The nanoscale diamond material; Nano level metal graphite composite material or nano level metal ceramic composite.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103040350A CN102332511A (en) | 2010-10-15 | 2011-09-30 | Light-emitting diode (LED) radiating substrate based on micro heat pipe device and method for manufacturing LED radiating substrate |
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| CN201010509132.9 | 2010-10-15 | ||
| CN2010105091329A CN101975384A (en) | 2010-10-15 | 2010-10-15 | Manufacturing method of radiating structure of LED (Light Emitting Diode) lamp |
| CN2011103040350A CN102332511A (en) | 2010-10-15 | 2011-09-30 | Light-emitting diode (LED) radiating substrate based on micro heat pipe device and method for manufacturing LED radiating substrate |
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| CN2010105091329A Pending CN101975384A (en) | 2010-10-15 | 2010-10-15 | Manufacturing method of radiating structure of LED (Light Emitting Diode) lamp |
| CN2011103040350A Pending CN102332511A (en) | 2010-10-15 | 2011-09-30 | Light-emitting diode (LED) radiating substrate based on micro heat pipe device and method for manufacturing LED radiating substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102969436A (en) * | 2012-11-30 | 2013-03-13 | 绍兴上鼎智控电子科技有限公司 | Phase transition constant temperature heat radiation heat conduction LED (Light Emitting Diode) packaging module |
| TWI588405B (en) * | 2014-09-18 | 2017-06-21 | Wei-Jia Huang | LED cooling substrate process and its structure |
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| CN103540902A (en) * | 2012-07-16 | 2014-01-29 | 上海华虹Nec电子有限公司 | Method for improving quality of physical-sputtering film forming |
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| CN1309341A (en) * | 2000-02-08 | 2001-08-22 | 山洋电气株式会社 | Cooling device provided with radiator |
| CN201068272Y (en) * | 2007-05-11 | 2008-06-04 | 讯凯国际股份有限公司 | Positioning and packing structure for radiator |
| CN101408302A (en) * | 2007-10-11 | 2009-04-15 | 富士迈半导体精密工业（上海）有限公司 | Light source module group with good heat radiating performance |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969436A (en) * | 2012-11-30 | 2013-03-13 | 绍兴上鼎智控电子科技有限公司 | Phase transition constant temperature heat radiation heat conduction LED (Light Emitting Diode) packaging module |
| TWI588405B (en) * | 2014-09-18 | 2017-06-21 | Wei-Jia Huang | LED cooling substrate process and its structure |
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