CN105202393A - LED bulb lamp and manufacturing method thereof - Google Patents
LED bulb lamp and manufacturing method thereof Download PDFInfo
- Publication number
- CN105202393A CN105202393A CN201510690637.2A CN201510690637A CN105202393A CN 105202393 A CN105202393 A CN 105202393A CN 201510690637 A CN201510690637 A CN 201510690637A CN 105202393 A CN105202393 A CN 105202393A
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- CN
- China
- Prior art keywords
- cooling base
- described cooling
- wafer
- preparation
- line layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/10—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings
- F21V3/12—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings the coatings comprising photoluminescent substances
Abstract
The invention discloses an LED bulb lamp. The LED bulb lamp comprises a heat dissipation base, a plurality of wafers, a hemisphere structure, a power supply, a burner and a lamp shade, wherein the heat dissipation base comprises a circuit structure; the wafers are connected to the heat dissipation base; the hemisphere structure is used for coating the wafers; the power supply is placed in the heat dissipation base; the burner is located at the bottom of the heat dissipation base and is in electric connection with the heat dissipation base through a wire; the lamp shade is arranged at the top of the heat dissipation base. Correspondingly, the invention further provides a manufacturing method of the LED bulb lamp. According to the LED bulb lamp and the manufacturing method thereof, as the light source and the structural parts are integrated, quick thermal balance can be realized to improve the consistency, the assembly process is simplified, the manufacturing cost is lowered and the production efficiency is improved.
Description
Technical field
The invention belongs to field of illuminating lamps, relate in particular to a kind of LEDbulb lamp and preparation method thereof.
Background technology
Because LED has the advantages such as long service life, energy consumption are low, economize energy, therefore LED has been widely used in daily life as light source, as LEDbulb lamp.
LED illumination lamp is primarily of structural member, and power supply, light source forms.Wherein light source mainly by lamp bead weld in the circuit board or COB (ChipOnBoard, chip on board) integration packaging form the light source heat-conducting silicone grease of light fixture and paste the thermal balance structure formed on a heat sink.Existing LED lamp bulb structure causes heat transfer difference because of packaging technology and component tolerances thus affects the uniformity of LED lamp optical attenuation; And wiring board or COB are large in conjunction with thermal resistance with radiator, cause properties of product to decline; In addition, along with the increase of LED quantity in LEDbulb lamp and the raising of power and brightness, the heat produced when also making LED work is unprecedented soaring.
Although existing LEDbulb lamp itself has heat abstractor, between light source and structural member, assembling is complicated, and radiating effect is poor, and its production cost is high, and efficiency is low.
Summary of the invention
In order to solve in prior art, LEDbulb lamp assembling is complicated, production cost is high, efficiency is low, the problem of light source poor performance, the invention provides a kind of LEDbulb lamp and preparation method thereof.
According to an aspect of the present invention, provide a kind of LEDbulb lamp, described LEDbulb lamp comprises: cooling base, multiple wafer, hemisphere structure, power supply, lamp holder and lampshade;
Described cooling base includes line construction;
Described wafer is connected on described cooling base;
Described hemisphere structure, for coated described wafer;
It is inner that described power supply is placed in described cooling base;
Described lamp holder is positioned at bottom described cooling base, and described lamp holder and described cooling base are electrically connected by wire;
Described lampshade is arranged at described cooling base top.
According to a specific embodiment of the present invention, described hemisphere structure adopts the glue material being mixed with fluorescent material to form.
According to another detailed description of the invention of the present invention, described wafer is welded by eutectic or binding mode is connected on described cooling base.
According to another detailed description of the invention of the present invention, described cooling base adopts pottery or metal material to be prepared from.
According to another aspect of the present invention, provide a kind of preparation method of LEDbulb lamp, it is characterized in that, described preparation method comprises step:
A) one cooling base is provided;
B) on described cooling base, line layer is formed;
C) described wafer eutectic welded or be bound on the line layer of cooling base;
D) square one-tenth hemisphere structure on the wafer;
E) in described cooling base inside, power supply is installed;
F) in the bottom of described cooling base, lamp holder is installed;
G) in described hemisphere structural outer, lampshade is installed.
According to a specific embodiment of the present invention, described cooling base is formed as follows:
The cavity body structure of described cooling base demand is formed by punching block;
Utilize extruder extrusion molding;
Be positioned in high temperature tunnel furnace and carry out high temperature sintering formation cooling base.
According to another detailed description of the invention of the present invention, the material of described cooling base comprises ceramic material or heat dissipation metal material.
According to another detailed description of the invention of the present invention, described step b) comprise further:
B11) polishing grinding is carried out to described cooling base, and carry out cleaning and drying and processing;
B12) line layer is formed by printed wire technology print electrocondution slurry;
B13) high temperature furnace is utilized to sinter circuit.
According to another detailed description of the invention of the present invention, described electrocondution slurry comprises: silver, copper, tin and/or nickel.
According to another detailed description of the invention of the present invention, described step b) comprise further:
B21) polishing grinding is carried out to described cooling base, and carry out cleaning and drying and processing;
B22) sputter copper metal composite layer on described cooling base;
B23) with the coating exposure of the photoresistance of yellow light lithography, development, etching, striping;
B24) to electroplate and/or electroless deposition mode increases the thickness of circuit;
B25) described photoresistance is removed.
According to another detailed description of the invention of the present invention, described step b) comprise further:
B31) be covered with copper metal on described cooling base surface, and carry out high-temperature heating formation composite metal substrate;
B32) etching mode is adopted to prepare circuit.
According to another detailed description of the invention of the present invention, described step b31) in, the temperature of high-temperature heating is 1065 DEG C ~ 1085 DEG C.
According to another detailed description of the invention of the present invention, described step c) be further, bonder is adopted to be arranged on by described wafer on the line layer of described cooling base, form tin cream in described bottom of wafer simultaneously, by high temperature furnace, described wafer eutectic is welded on the line layer of described cooling base.
According to another detailed description of the invention of the present invention, described step c) be that direct die bond carries out high temperature sintering on described line layer further, described wafer eutectic is welded on the line layer of described cooling base.
According to another detailed description of the invention of the present invention, described hemisphere structure adopts silica gel or silicone material to be formed.
LEDbulb lamp provided by the invention, by light source and structural member integrated design, changes the structure of LED illumination lamp in the past.Due to packaged light source direct on structural member, achieve thermal balance fast and promote uniformity, decrease wiring board, support, heat-conducting silicone grease, paster ... Deng material and assembling procedure, thus improving product characteristic, reduce production cost, improve production efficiency.
Present invention decreases the light splitting braid link in lamp pearl production technology, reduce SMT (SurfaceMountTechnology, surface mounting technology) and paste lamp pearl link; Simplify circuit board and mounting circuit boards to heat dispersion substrate link; Reduce each packed and transported link simultaneously, incorporate light source production and supply chain; Social resources are saved; Energy-conserving and environment-protective are really accomplished.
Accompanying drawing explanation
By reading the detailed description done non-limiting example done with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Figure 1 shows that the structural representation of a detailed description of the invention according to a kind of LEDbulb lamp provided by the invention;
Figure 2 shows that the schematic flow sheet of a detailed description of the invention of the preparation method according to a kind of LEDbulb lamp provided by the invention.
In accompanying drawing, same or analogous Reference numeral represents same or analogous parts.
Detailed description of the invention
Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts of specific examples and setting are described.In addition, the present invention can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.It should be noted that parts illustrated in the accompanying drawings are not necessarily drawn in proportion.Present invention omits the description of known assemblies and treatment technology and process to avoid unnecessarily limiting the present invention.
See Fig. 1, LEDbulb lamp provided by the invention comprises: cooling base 50, multiple wafer 20, fluorescent colloid structure 30, power supply 10, lamp holder 40 and lampshade 70.Described cooling base can adopt Al
2o
3, the ceramic material such as AlN or the metal material such as aluminium, copper be prepared from.Described cooling base 50 includes line construction.Described wafer 20 is connected on described cooling base 50.Wherein, described wafer 20 is welded by eutectic or binding mode is connected on described cooling base 50.Preferably, described wafer 20 is connected on described cooling base 50 by the mode that eutectic welds.
Described fluorescent colloid structure 30 is hemisphere structure, for coated described wafer 20.Wherein, preferably, described fluorescent colloid structure adopts the glue material being mixed with fluorescent material to form.
It is inner that described power supply 10 is placed in described cooling base 50.Described power supply 10 is made up of components and parts such as integrated circuit (integratedcircuit, IC), a plurality of resistance, electric capacity, inductance, bridge heaps.
Described lamp holder 40 is positioned at bottom described cooling base 50, and described lamp holder 40 is electrically connected by wire with described cooling base 50.Described lampshade 70 is arranged at the top of described cooling base 50, preferably, is combined by adhesive and cooling base 50.
See Fig. 2, Figure 2 shows that the schematic flow sheet of a detailed description of the invention of the preparation method according to a kind of LEDbulb lamp provided by the invention.
Step S101, provides a cooling base 50.The material of described cooling base 50 comprises ceramic material or heat dissipation metal material.Preferably, described pottery can be Al
2o
3, AlN etc.; Described metal can be aluminium, copper etc.Further, described cooling base 50 is formed as follows: the cavity body structure first being formed described cooling base demand by punching block; Then extruder extrusion molding is utilized; Finally be positioned in high temperature tunnel furnace and carry out high temperature sintering formation cooling base 50.The cooling base 50 of preparation like this can reach good thermal balance.
Step S102, described cooling base 50 forms line layer.The formation of line layer by various ways, can select optimal mode as required.Below the formation of line layer is described in detail.
Method one:
First, polishing grinding is carried out, to ensure the flatness on line layer surface to described cooling base 50; And carry out cleaning and drying and processing;
Secondly, line layer is formed by printed wire technology print electrocondution slurry;
Finally, utilize high temperature furnace to sinter circuit, conductive paste is fully combined with cooling base 50.Preferably, the above-mentioned conductive paste material conductive material such as silver, copper, tin, nickel.
Method two:
First, polishing grinding is carried out, to ensure the flatness on line layer surface to described cooling base 50; And carry out cleaning and drying and processing;
Secondly, sputter copper metal composite layer on described cooling base 50.Preferably, film specialized fabrication technology-vacuum coating mode sputter copper metal composite layer on cooling base 50 is utilized.Preferably, described copper metal composite layer is: CuAlO
2and CuAl
2o
4.
Again, with the coating exposure of the photoresistance of yellow light lithography, development, etching, striping;
Afterwards, to electroplate and/or electroless deposition mode increases the thickness of circuit;
Finally, described photoresistance is removed.
Method three:
First, be covered with copper metal on described cooling base 50 surface, and carry out high-temperature heating formation composite metal substrate.Preferably, the temperature of described high-temperature heating is 1065 DEG C ~ 1085 DEG C, such as: 1065 DEG C, 1075 DEG C or 1085 DEG C.More preferred, the temperature of described high-temperature heating is 1070 DEG C ~ 1080 DEG C, such as: 1070 DEG C, 1075 DEG C or 1080 DEG C.It is most important that the temperature of high-temperature heating meets metal substrate for formation, only could form best composite metal substrate in suitable temperature.
Afterwards, etching mode is adopted to prepare circuit.
Further, perform step S103, described wafer 20 eutectic is welded or is bound on the line layer of cooling base 50.
Preferably, wafer is planarized structure or inverted structure, after the line layer high temperature sintering of cooling base 50, bonder is adopted to be arranged on by described wafer 20 on the line layer of described cooling base 50, bottom described wafer 20, form tin cream simultaneously, by high temperature furnace, described wafer 20 eutectic is welded on the line layer of described cooling base 50.
Preferably, can also before the line layer high temperature sintering of cooling base 50, direct die bond carries out high temperature sintering on described line layer, is welded on the line layer of described cooling base 50 by described wafer 20 eutectic.
Step S104, forms hemisphere structure above described wafer 20, and described hemisphere structure is fluorescent colloid structure 30.Preferably, described hemisphere structure adopts the glue material being mixed with fluorescent material to form.More preferred, described glue material is silica gel or silicone material.
Step S105, installs power supply 10 in described cooling base 50 inside.
Step S106, installs lamp holder 40 in the bottom of described cooling base 50.
Step S107, installs lampshade 70 in described hemisphere structure 30 outside.
Line layer and wafer are all directly formed on cooling base by the present invention, avoid, as prior art, lamp pearl (wafer) is welded in circuit board, again circuit board is attached to the complex operations on radiator (heat dispersion substrate), improves production efficiency, reduce production cost.
Although describe in detail about example embodiment and advantage thereof, being to be understood that when not departing from the protection domain of spirit of the present invention and claims restriction, various change, substitutions and modifications can being carried out to these embodiments.For other examples, those of ordinary skill in the art should easy understand maintenance scope in while, the order of processing step can change.
In addition, range of application of the present invention is not limited to the technique of the specific embodiment described in description, mechanism, manufacture, material composition, means, method and step.From disclosure of the present invention, to easily understand as those of ordinary skill in the art, for the technique existed at present or be about to develop, mechanism, manufacture, material composition, means, method or step later, wherein their perform the identical function of the corresponding embodiment cardinal principle that describes with the present invention or obtain the identical result of cardinal principle, can apply according to the present invention to them.Therefore, claims of the present invention are intended to these technique, mechanism, manufacture, material composition, means, method or step to be included in its protection domain.
Claims (15)
1. a LEDbulb lamp, is characterized in that, described LEDbulb lamp comprises: cooling base, multiple wafer, hemisphere structure, power supply, lamp holder and lampshade;
Described cooling base includes line construction;
Described wafer is connected on described cooling base;
Described hemisphere structure, for coated described wafer;
It is inner that described power supply is placed in described cooling base;
Described lamp holder is positioned at bottom described cooling base, and described lamp holder and described cooling base are electrically connected by wire;
Described lampshade is arranged at described cooling base top.
2. LEDbulb lamp according to claim 1, is characterized in that, described hemisphere structure adopts the glue material being mixed with fluorescent material to form.
3. LEDbulb lamp according to claim 1, is characterized in that, described wafer is welded by eutectic or binding mode is connected on described cooling base.
4. LEDbulb lamp according to claim 1, is characterized in that, described cooling base adopts pottery or metal material to be prepared from.
5. a preparation method for LEDbulb lamp, is characterized in that, described preparation method comprises step:
A) one cooling base is provided;
B) on described cooling base, line layer is formed;
C) described wafer eutectic welded or be bound on the line layer of cooling base;
D) square one-tenth hemisphere structure on the wafer;
E) in described cooling base inside, power supply is installed;
F) in the bottom of described cooling base, lamp holder is installed;
G) in described hemisphere structural outer, lampshade is installed.
6. preparation method according to claim 5, is characterized in that, described cooling base is formed as follows:
The cavity body structure of described cooling base demand is formed by punching block;
Utilize extruder extrusion molding;
Be positioned in high temperature tunnel furnace and carry out high temperature sintering formation cooling base.
7. the preparation method according to claim 5 or 6, is characterized in that, the material of described cooling base comprises ceramic material or heat dissipation metal material.
8. preparation method according to claim 5, is characterized in that, described step b) comprise further:
B11) polishing grinding is carried out to described cooling base, and carry out cleaning and drying and processing;
B12) line layer is formed by printed wire technology print electrocondution slurry;
B13) high temperature furnace is utilized to sinter circuit.
9. preparation method according to claim 8, is characterized in that, described electrocondution slurry comprises: silver, copper, tin and/or nickel.
10. preparation method according to claim 5, is characterized in that, described step b) comprise further:
B21) polishing grinding is carried out to described cooling base, and carry out cleaning and drying and processing;
B22) sputter copper metal composite layer on described cooling base;
B23) with the coating exposure of the photoresistance of yellow light lithography, development, etching, striping;
B24) to electroplate and/or electroless deposition mode increases the thickness of circuit;
B25) described photoresistance is removed.
11. preparation methods according to claim 5, is characterized in that, described step b) comprise further:
B31) be covered with copper metal on described cooling base surface, and carry out high-temperature heating formation composite metal substrate;
B32) etching mode is adopted to prepare circuit.
12. preparation methods according to claim 11, is characterized in that, described step b31) in, the temperature of high-temperature heating is 1065 DEG C ~ 1085 DEG C.
13. preparation methods according to claim 25, it is characterized in that, described step c) be further, bonder is adopted to be arranged on by described wafer on the line layer of described cooling base, form tin cream in described bottom of wafer simultaneously, by high temperature furnace, described wafer eutectic is welded on the line layer of described cooling base.
14. preparation methods according to claim 5, is characterized in that, described step c) be that direct die bond carries out high temperature sintering on described line layer further, described wafer eutectic is welded on the line layer of described cooling base.
15. preparation methods according to claim 5, is characterized in that, described hemisphere structure adopts silica gel or silicone material to be formed.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510690637.2A CN105202393A (en) | 2015-10-22 | 2015-10-22 | LED bulb lamp and manufacturing method thereof |
| PCT/CN2016/081509 WO2017067149A1 (en) | 2015-10-22 | 2016-05-10 | Led bulb and method for manufacturing same |
| CN201610473239.XA CN106122804A (en) | 2015-10-22 | 2016-06-24 | A kind of LEDbulb lamp and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510690637.2A CN105202393A (en) | 2015-10-22 | 2015-10-22 | LED bulb lamp and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105202393A true CN105202393A (en) | 2015-12-30 |
Family
ID=54950225
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510690637.2A Pending CN105202393A (en) | 2015-10-22 | 2015-10-22 | LED bulb lamp and manufacturing method thereof |
| CN201610473239.XA Pending CN106122804A (en) | 2015-10-22 | 2016-06-24 | A kind of LEDbulb lamp and preparation method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610473239.XA Pending CN106122804A (en) | 2015-10-22 | 2016-06-24 | A kind of LEDbulb lamp and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN105202393A (en) |
| WO (1) | WO2017067149A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017067149A1 (en) * | 2015-10-22 | 2017-04-27 | 亚浦耳照明股份有限公司 | Led bulb and method for manufacturing same |
| CN112020227A (en) * | 2020-09-16 | 2020-12-01 | 浙江常山德讯达电子科技有限公司 | Production process of circuit heat dissipation integrated LED lamp |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106764561A (en) * | 2016-12-27 | 2017-05-31 | 江苏稳润光电科技有限公司 | A kind of integrated lamp and preparation method based on flip LED chips Vacuum Package |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011014515A (en) * | 2009-07-02 | 2011-01-20 | Aidou:Kk | Lighting fixture excellent on illuminance and light-distribution nature |
| CN102777776A (en) * | 2011-05-12 | 2012-11-14 | 深圳市华思科技股份有限公司 | Aluminum oxide ceramic LED (light emitting diode) bulb lamp and manufacture method thereof |
| CN102287788B (en) * | 2011-06-03 | 2014-08-27 | 厦门汇耕电子工业有限公司 | Manufacture method of fully integrated radiating structure with circuit function |
| CN103322437B (en) * | 2012-03-22 | 2016-12-14 | 赵依军 | There is LED ball lamp and the manufacture method thereof of strong heat-sinking capability |
| CN102767725A (en) * | 2012-07-30 | 2012-11-07 | 轻工业部南京电光源材料科学研究所 | Bulb lamp based on remote fluorescent light source module |
| CN203757406U (en) * | 2013-12-31 | 2014-08-06 | 福建省万邦光电科技有限公司 | LED (Light Emitting Diode) bulb lamp convenient for assembly |
| CN104896320A (en) * | 2014-03-06 | 2015-09-09 | 苏州同拓光电科技有限公司 | LED (light-emitting diode) lamp |
| CN204647931U (en) * | 2015-05-26 | 2015-09-16 | 中山市鼎立德光电科技有限公司 | A kind of LED disjunctor filament lamp |
| CN105202393A (en) * | 2015-10-22 | 2015-12-30 | 上海亚浦耳照明电器有限公司 | LED bulb lamp and manufacturing method thereof |
-
2015
- 2015-10-22 CN CN201510690637.2A patent/CN105202393A/en active Pending
-
2016
- 2016-05-10 WO PCT/CN2016/081509 patent/WO2017067149A1/en active Application Filing
- 2016-06-24 CN CN201610473239.XA patent/CN106122804A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017067149A1 (en) * | 2015-10-22 | 2017-04-27 | 亚浦耳照明股份有限公司 | Led bulb and method for manufacturing same |
| CN112020227A (en) * | 2020-09-16 | 2020-12-01 | 浙江常山德讯达电子科技有限公司 | Production process of circuit heat dissipation integrated LED lamp |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106122804A (en) | 2016-11-16 |
| WO2017067149A1 (en) | 2017-04-27 |
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Effective date of registration: 20160328 Address after: 201201 Shanghai, Pudong New Area East Road, No. 9, building 1, building 6101 Applicant after: Ayura Terua Limited by Share Ltd Address before: 201201, room 1, building 6111, 133 East Dragon Road, Shanghai, Pudong New Area Applicant before: Shanghai Oppel Lighting Co., Ltd. |
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Application publication date: 20151230 |