CN102292803A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN102292803A
CN102292803A CN2010800055659A CN201080005565A CN102292803A CN 102292803 A CN102292803 A CN 102292803A CN 2010800055659 A CN2010800055659 A CN 2010800055659A CN 201080005565 A CN201080005565 A CN 201080005565A CN 102292803 A CN102292803 A CN 102292803A
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CN
China
Prior art keywords
metal
scolder
semiconductor element
semiconductor device
treatment
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Pending
Application number
CN2010800055659A
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English (en)
Inventor
中村太一
古泽彰男
酒谷茂昭
北浦秀敏
松尾隆广
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN102292803A publication Critical patent/CN102292803A/zh
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract

本发明的目的在于提供一种既确保半导体元件与支承板之间有足够的接合强度、又提高来自半导体元件的发热向支承板的散热性的半导体装置。本发明所涉及的半导体装置包括：支承板；形成于所述支承板上的电极表面处理层；半导体元件；以及焊料，该焊料在以Bi为主成分的第一金属的内部含有熔点高于所述第一金属的第二金属的粒子，并将所述电极表面处理层和所述半导体元件进行接合，在所述焊料的与所述半导体元件的中央部相对应的区域，所述第二金属的组分比率高于所述第一金属，在与所述中央部相对应的区域的外侧的区域，所述第一金属的组分比率高于所述第二金属，在与所述中央部相对应的区域内，所述第二金属的组分比率为83.8原子％以上。

Description

半导体装置
技术领域
本发明涉及半导体装置，特别涉及利用焊料来将半导体元件和支承板进行接合的技术。
背景技术
由于世界各国对环境保护的意识增强，因此作为用于将电子元器件装载于基板的焊料，主要普及有Sn-Ag-Cu系列的无Pb焊料。
但是，对于例如功率用IGBT(Insulated Gate Bipolar Transistor：绝缘栅双极型晶体管)模块的内部接合材料，仍然在使用Pb焊料。这是因为：对于在用以将半导体元件固定于支承板的装载部的内部接合中使用的焊料，要求在将模块和母板进行接合时的回流安装温度下不会熔融。若用于内部接合的焊料因回流安装温度而再熔融，则产生模块短路的问题。回流安装温度一般为240℃～260℃。回流安装也被称为二次安装。
因此，寻求在回流安装温度下不会熔融的无Pb焊料，例如在专利文献1中，作为以满足该要求为目的的焊料，记载有以Bi为主成分的高温无Pb焊料。该高温无Pb焊料含有约2wt％～约18wt％的量的Ag、约98wt％～约82wt％的量的Bi、以及到约1000ppm的量的锌、镍、锗或它们的组合中的至少一种。此外，该高温无Pb焊料具有约262.5℃以上的固相线和约400℃以下的液相线。
另一方面，作为用于内部接合的其他接合材料，例如在专利文献2中，记载有导电性粘接剂。该导电性粘接剂是使Ag填料和粒子状树脂成分混合分散、并利用挥发性溶剂来形成糊状。Ag填料含有率最大为90％，热导率最大为60W/(m·K)。
专利文献1：日本国专利特表2005-503926号公报
专利文献2：日本国专利特开2001-351929号公报
发明内容
然而，上述专利文献1所记载的焊料以Bi为主成分。因此，热导率为9W/(m·K)左右，比仍在市场上使用的Pb焊料的热导率(35W/(m·K)左右)要低。例如，在半导体元件的发热源的下部放置有热导率为9W/(m·K)左右的焊料，该半导体元件装载于嵌入到电源电路中的功率用IGBT模块，在此情况下，散热性变差。由此，上述专利文献1所记载的焊料具有不得不提高散热性的问题。
另一方面，上述专利文献2所记载的导电性粘接剂是通过使Ag填料的调配比最大增加到90％、以使热导率最大上升到60W/(m·K)。另外，一般的含有Ag填料的导电性粘接剂的热导率为1.0W/(m·K)～1.3W/(m·K)。但是，随着电子设备的高性能化，例如对于装载于功率用IGBT模块的半导体元件，要求控制目前以上的大电流。随着该大电流化，半导体元件的发热量增加2～3倍左右。因此，对于用于内部接合的接合材料，要求热导率为70W/(m·K)～100W/(m·K)。由此，上述专利文献2所记载的导电性粘接剂具有不得不提高散热性的问题。
本发明的目的在于解决上述问题。即，本发明的目的在于提供一种半导体装置，能既确保半导体元件与引线框等支承板之间有足够的接合强度，又提高来自半导体元件的发热向支承板的散热性，并能提高产品合格率。
为了达到上述目的，本发明的半导体装置的特征在于，包括：支承板；形成于所述支承板上的电极表面处理层；半导体元件；以及焊料，该焊料在以Bi为主成分的第一金属的内部含有熔点高于所述第一金属的第二金属的粒子，并将所述电极表面处理层和所述半导体元件进行接合，在所述焊料的与所述半导体元件的中央部相对应的区域，所述第二金属的组分比率高于所述第一金属，在与所述中央部相对应的区域的外侧的区域，所述第一金属的组分比率高于所述第二金属，在与所述中央部相对应的区域内，所述第二金属的组分比率为83.8原子％以上。
根据本发明，在半导体元件的中央部的下部配置有高热导率的金属，能使来自半导体元件的发热有效地从接合材料即焊料散热。因此，能既确保半导体元件与支承板之间有足够的接合强度，又提高来自半导体元件的发热向支承板的散热性，并能提高产品合格率。
附图说明
图1是表示本发明的实施方式所涉及的半导体装置的制造工序的流程图，详细而言，图1(a)～图1(e)是分别表示本发明的实施方式所涉及的半导体装置的制造工序中的一道工序的剖视示意图，图1(f)是与本发明的实施方式所涉及的半导体装置的制造工序相对应的流程图。
图2是表示本发明的实施方式所涉及的半导体装置的制造工序中的焊料的状态变化的剖视示意图，详细而言，图2(a)～图2(c)是分别表示本发明的实施方式所涉及的半导体装置的制造工序中的焊料的状态变化中的一个状态的剖视示意图。
图3是本发明的实施方式所涉及的半导体装置的示意图，详细而言，图3(a)是本发明的实施方式所涉及的半导体装置的俯视示意图，图3(b)是沿图3(a)所示的X-X’线的剖视示意图。
图4是表示本发明的实施方式所涉及的半导体装置的制造工序中、氧浓度与焊接不良发生率的关系的图。
图5是表示本发明的实施方式所涉及的半导体装置的制造工序中、焊料的放置载荷与第一金属的熔出量的关系的图。
图6是表示本发明的实施方式所涉及的半导体装置的制造工序中、从电极表面处理层到轧制工具的距离与轧制率的关系的图。
图7是本发明的实施方式所涉及的半导体装置中的焊料的组分说明图，详细而言，图7(a)是从横向观察本发明的实施方式所涉及的半导体装置的横向剖视示意图，图7(b)是沿图7(a)所示的S-S’线的纵向剖视示意图。
具体实施方式
下面，参照附图，具体说明本发明的实施方式。在本实施方式中，对利用以Bi为主成分的焊料来将半导体元件和支承板进行了接合的半导体装置进行说明。
首先，对本实施方式所涉及的半导体装置的制造工序进行说明。图1(a)～图1(f)是表示本实施方式所涉及的半导体装置的制造工序的流程图。具体而言，图1(a)～图1(e)表示各制造工序中的剖视示意图，图1(f)表示与各制造工序相对应而由步骤001～步骤005示出的流程图。该制造工序是用于制造具有热传导性优良的裸芯片焊接(die bond)接合部的半导体装置的工序。
首先，利用图1(a)来说明步骤001。在步骤001中，准备引线框101，作为支承板。引线框101是Cu合金制的。由于Cu合金与熔融状态的Bi的浸润性较差，因此，在引线框101上，需要由与熔融状态的Bi的浸润性较好的材料形成的电极表面处理层。因而，在步骤001中，准备在电极部分形成有与Bi的浸润性较好的电极表面处理层102的引线框101。
接下来，利用图1(b)来说明步骤002。在步骤002中，在引线框101的形成于电极部分的电极表面处理层102的上表面的重心部，放置有以Bi为主成分的焊料103。
此处，对放置焊料103的方法进行说明。首先，为了使Bi稳定并熔融，将引线框101在比Bi的熔点271℃要高30℃以上的温度下进行保温。接下来，通过使吸附有一个焊料103的焊料吸附工具106移动，来将其所吸附的焊料103放置于电极表面处理层102的上表面的重心部。之后，解除焊料吸附工具106的吸附，撤除焊料吸附工具106。焊料103在以Bi为主成分的第一金属104的外周部，分散有熔点高于该第一金属104且高热导率的第二金属105的粒子，从而形成双层结构。
此处，利用图2，对在将焊料103放置在电极表面处理层102上时的焊料103的状态变化进行说明。图2是表示本实施方式所涉及的半导体装置的制造工序中的焊料的状态变化的剖视示意图。
若如图2(a)所示，将焊料103放置在加热后的引线框101的电极表面处理层102上，则如图2(b)所示，焊料103的第一金属104开始熔融。熔融后的第一金属104从存在于焊料103的外周部的第二金属105的粒子的粒子边界间隙处熔出，并在电极表面处理层102上浸润。若再经过一段时间，则如图2(c)所示，焊料103的第一金属104在电极表面处理层102上浸润扩散，比重比第一金属104要小的第二金属105悬浮在焊料103的表面。此时，第一金属104以电极表面处理层102的上表面的重心部为中心而浸润扩散。因而，浸润扩散后的第一金属104的表面的中心与电极表面处理层102的上表面的重心部相对应。这样，最终，浸润扩散后的第一金属104的表面的中央部的第二金属105的粒子数、比该中央部周围的第二金属105的粒子数要多。
另外，也可以在第一金属中添加不对熔点带来影响的程度的、Bi以外的金属。例如，也可以对Bi添加0.06重量％的量的Ge。
接下来，利用图1(c)来说明步骤003。在步骤003中，在引线框101的电极表面处理层102上对焊料103进行轧制。此时，以电极表面处理层102的上表面的重心部为中心，对焊料103进行轧制。因而，轧制后的焊料103的中心与电极表面处理层102的上表面的重心部相对应。在该实施方式中，通过使轧制工具107下降，从而在电极表面处理层102上对焊料103进行轧制。
接下来，利用图1(d)来说明步骤004。在步骤004中，在轧制后的焊料103上放置半导体元件109。此时，放置半导体元件109，使得半导体元件109的下表面(与电极表面处理层102相对的面)的中心位于电极表面处理层102的上表面的重心部。在本实施方式中，通过使吸附有半导体元件109的半导体元件吸附工具108移动，来将其所吸附的半导体元件109放置于在电极表面处理层102上进行了轧制的焊料103上。在放置了半导体元件109之后，解除半导体元件吸附工具108的吸附，撤除半导体元件吸附工具108。
接下来，利用图1(e)来说明步骤005。在步骤005中，通过使焊料103冷却凝固，将引线框101上的表面电极处理层102和半导体元件109进行接合。
接下来，说明本实施方式的半导体装置。图3(a)及图3(b)是本实施方式所涉及的半导体装置的示意图。具体而言，图3(a)是半导体装置的俯视示意图，图3(b)是沿图3(a)所示的X-X’线的剖视示意图。如图3(b)所示，在将半导体元件109和引线框101进行接合的裸芯片焊接接合部(焊料接合部)的中央部，第二金属105的比例大于第一金属104，相反，在该中央部的外侧，第一金属104的比例大于第二金属105。裸芯片焊接接合部的中央部是与半导体元件109的中央部相对应的区域。
接下来，按照上述步骤的顺序来说明本实施方式的一个实施例。另外，在本实施例中，制造了装载有Si制半导体元件的功率用IGBT模块。
首先，利用图1(a)来说明步骤001。在本实施例中，在引线框101上的顶面尺寸为4.5mm×5.5mm的电极部分(未图示)，通过电镀法将Ag以3μm的厚度成膜，作为电极表面处理层102。另外，在本实施例中，虽然是将Ag以3μm的厚度成膜作为电极表面处理层102，但也可以利用作为与熔融状态的Bi的浸润性较好的金属的Au、Ni、Co、Zn，对于厚度，考虑到1μm的成膜厚度偏差，在1μm以上即可。
接下来，利用图1(b)来说明步骤002。此处利用的焊料103是直径为1mm的球状，在球状的第一金属104的外周部分散有作为第二金属105的平均粒子直径为3μm的Cu粒子。第一金属104的主成分是Bi。将该焊料103放置于电极表面处理层102的上表面的重心部。另外，根据由光学系统粒子直径测定机所测定的粒子直径和正圆度，来计算出Cu粒子的平均粒子直径。
作为球状焊料的制造方法，一般已知有油中造粒法。油中造粒法例如记载于日本专利特开2000-328112号公报中。在本实施例中，也利用了油中造粒法。具体而言，首先，将组分均匀分散的铸块(ingot)状态的Bi-8重量％Cu的合金1kg放入到坩埚(pot)中，利用加热单元将整个坩埚加热到500℃。由于Cu、Bi的熔点分别是1083℃、271℃，因此，在坩埚内仅有Bi熔融。接下来，利用坩埚前端的浸渍于油内的、具有直径为0.5mm的开口部的喷嘴来喷射仅有Bi熔融后的合金，在油内使合金以250℃/min的冷却速度凝固。在该油内的凝固过程中，Cu分散、偏析于熔融状态的Bi的外周部，同时，Bi发生凝固。这是因为：由于Cu的熔点高于Bi，因此，Cu从所喷射的合金的内部被推出到合金的外周部，Bi在合金的内部凝固。
如图1(b)所示，通过上述方法所制造的焊料103成为在球状的第一金属104的外周部分散有作为第二金属105的平均粒子直径为3μm的Cu粒子的状态。此外，焊料103的直径为1mm(允许误差在±50μm以内、工序能力指数Cpk＝3.77)。
在表1中示出通过油中造粒法所制造的焊料的实施例1～6和比较例1～6的各自的焊料组分、第一金属的种类、第二金属的种类、能否利用喷嘴来喷射焊料、焊料直径、以及第二金属的平均粒子直径。另外，本实施例是表1的实施例1。
通过观察焊料的剖面来测量焊料直径的数值。但是，对于实施例1～6及比较例5～6，利用具有直径为0.5mm的开口部的喷嘴，对于比较例1～4，利用具有直径为0.7mm的开口部的喷嘴。
[表1]
  焊料组分   第一金属   第二金属   可否喷射   焊料直径   第二金属平均粒子直径
  实施例1   Bi-8重量％Cu   Bi   Cu   ○   1mm   3μm
  实施例2   Bi-2重量％Cu   Bi   Cu   ○   1mm   2.8μm
  实施例3   Bi-8重量％Ag   Bi   Ag   ○   1mm   2.7μm
  实施例4   Bi-4重量％Cu-4重量％Ag   Bi   Cu，Ag   ○   1.01mm   3.1μm
  实施例5   Bi-8重量％Zn   Bi   Zn   ○   1.02mm   2.5μm
  实施例6   Bi-4重量％Cu-4重量％Zn   Bi   Cu，Zn   ○   1.01mm   2.3μm
  比较例1   Bi-10重量％Cu   Bi   Cu   ×   (1.21mm)   -
  比较例2   Bi-9重量％Cu   Bi   Cu   ×   (1.19mm)   -
  比较例3   Bi-10重量％Ag   Bi   Ag   ×   (1.22mm)   -
  比较例4   Bi-5重量％Cu-5重量％Ag   Bi   Cu，Ag   ×   (1.23mm)
  比较例5   Bi-8重量％Sn   Bi   Sn   ○   0.9mm   ×未分散在外周
  比较例6   Bi-8重量％In   Bi   In   ○   1.03mm   ×未分散在外周
像表1的实施例1～6那样，从Cu、Ag、Zn中选择一种或两种作为第二金属105，使第二金属105的添加量(在选择了两种的情况下，对它们的量进行总计后得到的量)为2重量％以上且为8重量％以下，在此情况下，能利用具有直径为0.5mm的开口部的喷嘴来进行喷射。此外，在以Bi为主成分的第一金属104的外周部，分散有平均粒子直径为2.3μm～3μm的第二金属105的粒子。
另一方面，像表1的比较例1～4那样，从Cu、Ag中选择一种或两种作为第二金属105，使第二金属105的添加量(在选择了两种的情况下，对它们的量进行总计后得到的量)为9重量％以上，在此情况下，在具有直径为0.5mm的开口部的喷嘴中发生堵塞，不能进行喷射。在此情况下，虽然只要利用具有直径为0.7mm的开口部的喷嘴，就能进行喷射，但焊料的直径变为1.19mm以上且为1.23mm以下，从而大于实施例。这样，在利用了具有直径为0.7mm的开口部的喷嘴的情况下，提供的焊料量变多。若提供的焊料量变多，则在步骤003中，焊料103从电极表面处理层102溢出，该溢出的焊料迂回到引线框101的背面，有可能使后续的工序中断。据此，第二金属105的添加量优选为8重量％以下。
此外，像表1的比较例5～6那样，选择Sn或In作为第二金属105，使第二金属105的添加量为8重量％，在此情况下，第二金属105不仅分散在第一金属104的外周部，还分散在整个内部。这是因为：Bi的熔点为271℃，与此不同的是，Sn、In的熔点分别为232℃、157℃，低于Bi的熔点。详细而言，是因为：在焊球制造的凝固过程中，高熔点的Bi先凝固，Sn或In接着凝固，从而Sn或In的粒子分散在第一金属104的Bi的整个内部。据此，第二金属105的熔点需要高于Bi。
此外，一般的半导体元器件内部的接合材料即Pb焊料(例如，Pb-3重量％Sn)的热导率为35W/(m·K)。因而，对于本实施方式的焊料103，要求热导率为35W/(m·K)以上。
根据以上内容，需要第二金属105的热导率为Pb-3重量％Sn的35W/(m·K)以上，且熔点高于Bi。作为满足该条件的金属，可举出Ag、Cu、Au、Al、Zn。因此，作为第二金属105，从Ag、Cu、Au、Al、Zn中选择一种或两种即可。在上述实施例1～6中，虽然利用了Ag、Cu、Zn，但由于Au及Al的熔点分别为1064℃、660℃，高于Bi的271℃，且Au及Al的热导率分别为317W/(m·K)、237W/(m·K)，高于Pb的35W/(m·K)，因此，可认为Au、Al也适合作为第二金属105。
此外，由于在Ag、Cu、Au、Al、Zn中，特别是Ag、Cu为热导率较大的金属，因此，在从Ag、Cu中选择一种或两种作为第二金属的情况下，可期望提高来自半导体元件109的发热向引线框101的散热性。
但是，若对Bi添加Ag，则共晶温度成为262℃，比Bi的熔点低9℃以上。因此，在回流安装时的温度下，焊料有可能再熔融。回流安装温度一般为240～260℃。与此不同的是，由于在对Bi添加Cu时的共晶温度为270℃，因此，焊料在回流安装时再熔融的可能性较小。
根据以上内容，焊料103的第二金属105特别优选是Cu。此外，第二金属105的添加量需要为8重量％以下。因此，焊料103优选是以Bi为主成分并添加了8重量％的量的Cu的组分(Bi-8重量％Cu)，是直径为1mm的球状。
此外，在将焊料103放置于电极表面处理层102的上表面的重心部的步骤002中，需要降低空间的氧浓度，以抑制引线框101上的电极表面处理层102的氧化及焊料103的氧化。之所以像这样降低氧浓度，是由于焊料103没有助焊剂成分。通过降低氧浓度，能将焊料103与保温的引线框101上的电极表面处理层102进行良好的接合(焊接)。
图4表示在将引线框101保温于320℃、利用不锈钢制的开口直径为0.5mm的焊料吸附工具106将焊料103以30gf的载荷放置于电极表面处理层102的情况下的氧浓度与焊接不良发生率的关系。图4的表的横轴表示氧浓度(ppm)，其纵轴表示焊接不良发生率(％)。此处，所谓焊接不良，是指因电极表面处理层102的表面与焊料103的表面难以接合而导致的焊料飞散、不浸润之类的问题。此外，设各自的样品数为10，以计算出各氧浓度下的焊接不良发生率。
从图4可知，在氧浓度为1、10、30、50、100ppm时，未发生焊接不良，可得到良好的焊接性。在氧浓度为500ppm、1000ppm时，焊接不良发生率高达80％以上。这是因为：引线框101上的电极表面处理层102的表面及焊料103的表面的氧化膜变厚，从而引线框101与焊料103变得难以接合。此外，虽然优选氧浓度较低，但考虑到设备的控制性能，难以使氧浓度低于1ppm。据此，氧浓度优选从焊接不良发生率成为10％以下的、1ppm以上且为300ppm以下的范围内选择。在本实施例中，使氧浓度为50ppm。另外，即使在步骤003、步骤004中，也使氧浓度为50ppm。
此外，引线框101需要在第一金属104熔融且第二金属105不熔融的温度下进行保温。由于以Bi为主成分的第一金属104的熔点为271℃，因此，引线框101的保温温度的下限值必须为比Bi的熔点要高30℃以上的温度，以使Bi稳定熔融。优选使下限值还具有安全区域。具体而言，下限值优选为310℃以上。另一方面，引线框101的保温温度的上限值优选为比第二金属105的熔点要低30℃以上的温度，以可靠地使第二金属105不熔融。优选使上限值也具有安全区域。具体而言，由于在Ag、Cu、Au、Al、Zn中熔点最低的金属为Zn，Zn的熔点为420℃，因此，引线框101的保温温度的上限值优选为380℃以下。在该实施例中，使引线框101的保温温度为比Bi的熔点要高约50℃的320℃。这是为了提高Bi的浸润性，并考虑了加热源的温度调整的不稳定性。另外，即使在步骤003、步骤004中，也使引线框101的保温温度为320℃。
此外，焊料103的放置载荷需要的量为使得以Bi为主成分的第一金属104从作为第二金属105的平均粒子直径为3μm的Cu粒子的粒子边界间隙熔出的载荷。图5表示焊料103的放置载荷与在电极表面处理层102上熔出的第一金属的熔出量的关系。详细而言，图5表示在将引线框101保温于320℃、空间的氧浓度为50ppm、利用了组分为Bi-8重量％Cu且直径为1mm的球状的焊料103的情况下的焊料103的放置载荷与第一金属104的熔出量的关系。图5的表的横轴表示焊料的放置载荷(gf)，其纵轴表示第一金属的熔出量(cm3)。
从图5可知，在放置载荷为10gf以上时，第一金属104的熔出量成为0.1414×10-4cm3以上，以Bi为主成分的第一金属104从作为第二金属105的平均粒子直径为3μm的Cu粒子的粒子边界间隙处熔出，在电极表面处理层102上浸润扩散。但是，可知，在放置载荷为200gf、500gf时，所熔出的第一金属104在焊料吸附工具106的开口部堵塞。据此，放置载荷优选为10gf以上且为150gf以下。在本实施例中，使放置载荷为30gf。
接下来，利用图1(c)来说明步骤003。在本实施例中，通过使长方体状的轧制工具107相对于放置在引线框101上的电极表面处理层102上的焊料103垂直地下降，从而在电极表面处理层102上对焊料103进行轧制。使引线框101保温于320℃，空间的氧浓度为50ppm。对于轧制工具107，利用顶面尺寸为3.5mm×4.5mm、高度为30mm的超硬合金(cemented carbide)制工具。轧制工具的材料优选不会溶解于焊料103、在310℃以上且在380℃以下的范围内的温度下不会熔融的金属材料。作为满足该条件的材质，例如可举出SUS304、SUS316等SUS系列的材质。使焊料103在轧制后的面积为之后装载的半导体元件109的下表面的表面积以上且为电极表面处理层102的上表面的表面积以下。因此，也需要使轧制工具107的下表面的表面积为之后装载的半导体元件109的下表面的表面积以上且为电极表面处理层102的上表面的表面积以下。
在图6中表示电极表面处理层102的上表面和下降后的轧制工具107的下表面之间的距离、与焊料103的轧制率的关系。图6的表的横轴表示电极表面处理层102的上表面和下降后的轧制工具107的下表面之间的距离(μm)，其纵轴表示轧制率(％)。焊料103的轧制率的计算公式如下所述。
轧制率＝((浸润扩散后的焊料103的表面积)÷(电极表面处理层102的上表面的表面积))×100(％)
此处，电极表面处理层102的上表面的表面积为4.5×5.5＝24.75mm2。此外，之后装载的半导体元件109的下表面的表面积为3.5×4.5＝15.75mm2。因此，为了使焊料103在轧制后的面积为半导体元件109的下表面的表面积以上且为电极表面处理层102的上表面的表面积以下，需要使轧制率为63.6％(15.75÷24.75×100)以上且为100％以下。当轧制率为63.6％时，焊料103被轧制成与半导体元件109的下表面的表面积相等的面积，当轧制率为100％时，焊料103被轧制成与电极表面处理层102的上表面的表面积相等的面积。
从图6可知，在电极表面处理层102的上表面和下降后的轧制工具107的下表面之间的距离为100μm以下时，轧制率成为63.6％以上。此外，可以知道，在距离为1μm和5μm的情况下，轧制率成为100％以上。在轧制率为100％以上的情况下，焊料103浸润扩散成电极表面处理层102的上表面的表面积以上。因而，在此情况下，从电极表面处理层102溢出的焊料迂回到引线框101的背面，有可能使后续的工序中断。由此，电极表面处理层102的上表面和下降后的轧制工具107的下表面之间的距离优选为10μm以上且为100μm以下。在本实施例中，使电极表面处理层102的上表面和下降后的轧制工具107的下表面之间的距离为20μm。
此外，在引线框101的保温温度为320℃时，由于Cu、Bi的熔点分别为1083℃、271℃，因此，仅Bi成为熔融状态。因而，通过使轧制工具107相对于电极表面处理层102垂直地下降，能对焊料103中的以Bi为主成分的第一金属104进行轧制，并将作为第二金属105的平均粒子直径为3μm的Cu粒子留在放置焊料103的位置。
接下来，利用图1(d)来说明步骤004。在本实施例中，通过使吸附有半导体元件109的半导体元件吸附工具108移动，来将其所吸附的半导体元件109无载荷地放置于在电极表面处理层102上进行了轧制的焊料103上。在半导体元件109的与焊料103相对的表面(下表面)，利用蒸镀法将扩散防止层和Ag层分别以1μm、1.5μm的厚度依次成膜。对于半导体元件吸附工具108，使用了SUS304制的工具。但是，也可以使用SUS316等其他SUS系列的材质的工具。此外，对于半导体元件109，使用了从Si制且直径为6英寸、厚度为0.3mm的晶片以3.5mm×4.5mm的大小进行切割而得到的元件。
接下来，利用图1(e)来说明步骤005。在本实施例中，通过将引线框101冷却至室温，从而使焊料103凝固，将引线框101上的表面电极处理层102和半导体元件109进行接合。空间的氧浓度优选为1ppm以上且为300ppm以下。在本实施例中，使空间的氧浓度为50ppm。
接下来，利用图7及表2说明本实施方式的半导体装置的特征。表2的实施例1～6的制造方法与上述实施例相同，实施例1～6仅焊料的组分不同。另外，上述实施例是表2的实施例1。此外，实施例1～6和比较例7～12的制造方法仅步骤002的焊料的放置方法不同，焊料的提供量及其他步骤相同。使实施例1～6和比较例7～12的焊料的组分具有相同条件。
图7是本实施方式所涉及的半导体装置中的焊料的组分说明图，详细而言，图7(a)表示从横向观察本实施方式所涉及的半导体装置的横向剖视结构，图7(b)表示沿图7(a)所示的S-S’线的纵向剖视结构。表2表示将半导体元件接合于引线框上之后的焊料的组成物的分布状态、焊料的热导率、及半导体装置的产品合格率。利用将引线框和半导体元件进行接合的裸芯片焊接接合部(焊料接合部)的中央部和外周部的各自的组分比率，来表示焊料的组成物的分布状态。将半导体元件接合于引线框上之后，进行到最后的工序以组装功率用IGBT模块，执行动作试验，从而计算出半导体装置的产品合格率。
[表2]
如图7(a)及图7(b)所示，半导体元件109的与电极表面处理层102相对的面(下表面)的外形为四边形。设其外形中的一方相对的两边(长边)的长度为2A、另一方相对的两边(短边)的长度为2B，设连接长度为2B的短边的中点彼此之间的直线为X轴、连接长度为2A的长边的中点彼此之间的直线为Y轴，将X轴与Y轴的交点作为原点O(X＝0、Y＝0)，以设定X-Y坐标面，在该X-Y坐标面中，将由X＝±7A/10的直线和Y＝±7B/10的直线围住的区域、和该区域外侧的区域分别设定作为中央部、外周部，对分别与该设定的中央部、外周部相对应的焊料103的各区域中的第一金属104和第二金属105的比率进行了调查，其结果是，如表2所示，在实施例1～6中，在与中央部相对应的区域(裸芯片焊接接合部的中央部)，第二金属105的比率高于第一金属104，在与外周部相对应的区域(裸芯片焊接接合部的外周部)，第一金属104的比率高于第二金属105。
比较例的焊料的放置方法是一般的裸芯片焊接工艺即灌注工艺。在灌注工艺中，利用分配器将熔融状态的焊料103放置在引线框101上的电极表面处理层102上。
从表2可知，尽管是相同的焊料组分，对于组装后的产品合格率，实施例为85％～100％，与此不同的是，比较例为20％～30％，比实施例要低55％～80％。
之所以实施例的产品合格率较高，可认为是因为：在实施例的制造方法中，由于使用了在以Bi为主成分的第一金属104的外周部、分散有热导率为121W/(m·K)～427W/(m·K)的第二金属105的粒子的焊料103，因此，在将焊料103放置在保温的引线框101上时，第一金属104浸润扩散，并且，在该浸润扩散后的第一金属104的表面的中央部的、高热导率的第二金属105的粒子数多于在该中央部的周围的第二金属105的粒子数，通过对这种状态的焊料103进行轧制，如表2所示，在半导体元件109的中央部的下部配置83.8原子％～89.8原子％的第二金属105，裸芯片焊接接合部的原点O部的热导率成为103W/(m·K)～158W/(m·K)，在IGBT进行动作时从半导体元件109产生的热量有效地向引线框101散热。另外，121W/(m·K)是Zn的热导率，427W/(m·K)是Ag的热导率。
另一方面，之所以比较例的产品合格率较低，可认为是因为：在比较例的制造方法中，由于提供熔融状态的焊料，因此，对121W/(m·K)～427W/(m·K)的高热导率的第二金属105的粒子均匀分散在第一金属104中的焊料进行轧制，其结果是，如表2所示，在半导体元件109的中央部的下部仅配置2.4原子％～5原子％的第二金属105，当在IGBT的动作中从半导体元件109产生的热量向引线框散热时，焊料103的主成分即热导率为9.15W/(m·K)的Bi的散热特性产生显著影响，裸芯片焊接接合部的最高热导率成为比用作为现有的裸芯片焊接接合用的焊料的Pb-3重量％Sn的热导率35W/(m·K)要低的9.7W/(m·K)～11W/(m·K)，由半导体元件109产生的热量没有充分散热，半导体元件109的温度变得高于动作临界温度。
另外，在实施例中，虽然从Ag、Cu、Zn中选择一种或两种作为第二金属105，但也可以从Au、Al中选择一种或两种作为第二金属105。这是因为：Au及Al的熔点分别为1064℃、660℃，任一熔点都高于Bi的271℃，且Au及Al的热导率分别为317W/(m·K)、237W/(m·K)，任一热导率都高于Pb的35W/(m·K)。
此外，在实施例中，虽然为了调查第一金属104和第二金属105的比率，将裸芯片焊接接合部的中央部的外形设定为四边形，但也可以将具有裸芯片焊接接合部与半导体元件109的界面的面积的约一半面积、以放置球状的焊料103的位置为中心的区域设定为中央部，中央部的外形并不限定于四边形。
此外，在实施例中，虽然制造了作为在电源部中使用的一种功率用半导体装置的功率用IGBT模块，但本发明并不仅仅适用于功率用IGBT模块。此外，在实施例中，虽然使用了Si制的半导体元件，但本发明并不仅仅适用于使用Si制的半导体元件的情况，也能适用于例如使用GaN制的半导体元件或SiC制的半导体元件等的情况。
此外，在以上说明的实施方式中，虽然举出在支承板上装载一个半导体元件的半导体装置为例进行了说明，但本发明也能适用于在支承板上装载例如内置有多个功能块(CPU部、RAM部、ROM部、IO部、电源部等)的LSI作为半导体元件109的半导体装置。在装载LSI的情况下，由于散布有多个发热源，因此，在各发热源的下部分别配置焊料103。但是，在此情况下，使用直径比上述实施方式的焊料要小的焊料。
工业上的实用性
本发明所涉及的半导体装置能既确保半导体元件与支承板之间有足够的接合强度，又提高来自半导体元件的发热向支承板的散热性，并能提高产品合格率，可期待用于功率用半导体装置或小功率晶体管等的半导体封装。

Claims (6)

1.一种半导体装置，其特征在于，包括：
支承板；
形成于所述支承板上的电极表面处理层；
半导体元件；以及
焊料，该焊料在以Bi为主成分的第一金属的内部含有熔点高于所述第一金属的第二金属的粒子，并将所述电极表面处理层和所述半导体元件进行接合，
在所述焊料的与所述半导体元件的中央部相对应的区域，所述第二金属的组分比率高于所述第一金属，在与所述中央部相对应的区域的外侧的区域，所述第一金属的组分比率高于所述第二金属，在与所述中央部相对应的区域内，所述第二金属的组分比率为83.8原子％以上。
2.如权利要求1所述的半导体装置，其特征在于，
所述半导体元件的与所述电极表面处理层相对的面的外形是四边形，
设其外形中的一方相对的两边的长度为2A、另一方相对的两边的长度为2B，
设连接长度为2B的两边的中点彼此之间的直线为X轴、连接长度为2A的两边的中点彼此之间的直线为Y轴，
将X轴与Y轴的交点作为原点，以设定X-Y坐标面，在这种情况下，
在所述X-Y坐标面中，由-7A/10≤X≤7A/10、-7B/10≤Y≤7B/10来规定所述半导体元件的中央部。
3.如权利要求1或2所述的半导体装置，其特征在于，
所述第二金属是热导率处于35W/(m·K)以上且为427W/(m·K)以下的范围内、熔点处于420℃以上且为1083℃以下的范围内的金属。
4.如权利要求1至3的任一项所述的半导体装置，其特征在于，
所述第二金属是从Ag、Cu、Au、Al、Zn中选择的至少一种金属。
5.如权利要求4所述的半导体装置，其特征在于，
选择Cu作为所述第二金属，在与所述中央部相对应的区域内，所述第二金属的组分比率为84.1原子％以上。
6.如权利要求4所述的半导体装置，其特征在于，
选择Cu和Ag作为所述第二金属，在与所述中央部相对应的区域内，所述第二金属的组分比率为84.7原子％以上。
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JP2007313526A (ja) * 2006-05-24 2007-12-06 Matsushita Electric Ind Co Ltd 接合材料、電子部品および接合構造体

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105448744A (zh) * 2015-11-17 2016-03-30 南通富士通微电子股份有限公司 无助焊剂式凸块回流成球率控制方法
CN105448744B (zh) * 2015-11-17 2017-11-07 通富微电子股份有限公司 无助焊剂式凸块回流成球率控制方法

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