CN102291924B - Novel plasma treatment device - Google Patents
Novel plasma treatment device Download PDFInfo
- Publication number
- CN102291924B CN102291924B CN 201110227844 CN201110227844A CN102291924B CN 102291924 B CN102291924 B CN 102291924B CN 201110227844 CN201110227844 CN 201110227844 CN 201110227844 A CN201110227844 A CN 201110227844A CN 102291924 B CN102291924 B CN 102291924B
- Authority
- CN
- China
- Prior art keywords
- tube
- plasma
- processing unit
- inner tube
- outer tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009832 plasma treatment Methods 0.000 title abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000002245 particle Substances 0.000 claims abstract description 18
- 230000005281 excited state Effects 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 4
- 238000004381 surface treatment Methods 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 4
- 230000008030 elimination Effects 0.000 claims description 3
- 238000003379 elimination reaction Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 150000002500 ions Chemical class 0.000 abstract description 9
- 238000007086 side reaction Methods 0.000 abstract description 5
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 206010010774 Constipation Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000010559 graft polymerization reaction Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
Images
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a novel plasma treatment device. The device is wholly in the negative pressure environment and comprises an inner tube, an insulating tube and an outer tube which are nested with each other from inside to outside, wherein the inner tube is connected with a high-frequency power supply; the outer tube is earthed; the inner tube and the outer tube are metal tubes and are insulated by the intermediate insulating tube; one end of the three-layer sleeve structure of the device is provided with a gas source interface and the other end is closed; the device is provided with at least a row hole penetrating through the inner tube, the insulating tube and the outer tube; and the distances between the row holes and the material to be treated satisfy the condition that the electrons or ions in the plasma are eliminated per se and only particles in the excited state are remained. The device has the following prominent effects: under the same discharge power, the plasma particles jetted by the structure have high energy and high concentration and are more suitable for the materials which are more difficult to treat; because of the remote advantage, the structure has less side reactions and purer treatment aim, reduces the damage to the material surface, simultaneously has lower thermal stress and can be used for treating the sensitive materials.
Description
Technical field
The present invention relates to a kind of device for material being carried out the Surface Physical Chemistry processing, relate in particular to a kind of spray gun device that is applied to the dry type gas-phase reaction, high energy high-density plasma air-flow is provided.
Background technology
The low temperature plasma process of surface treatment refers to (be generally tens handkerchiefs) under negative pressure, and the gas exerts high-frequency electric field to certain makes it be excited into plasmoid.Plasma is as the 4th attitude of material, wherein comprise a large amount of electronics, ion and free radical isoreactivity particle, these active particles collide the surface of processed object, corresponding physics or chemical reaction can occur, the character of material surface is changed or give new function, to reach its processing intent, satisfy the needs of practical application.
Compare traditional material surface treatment method, plasma treatment has following advantage: 1. the plasma treatment material surface belongs to dry process, is different from conventional liquid phase processing method, not to environment, and clean environment firendly; 2. plasma reaction speed, treatment effeciency is higher, so the energy consumption less, processing cost is lower; 3. plasma treatment only relates to material surface, does not affect the performance of processed material itself; 4. the plasma treatment application scenario is comparatively extensive, because its distinctive gas phase reaction process, low temperature plasma is widely applied the field of surface treatment in precision components.
Present domestic low temperature plasma application also lags behind developed countries significantly, but market prospects are comparatively considerable.Yet in traditional plasma treatment, because the diversity of plasma content, so its surface treatment reaction to the processing object is not single.For example the excited state particle in the plasma is because contained energy is higher, it collides and can interrupt some covalent bond after material or the monomer gas and make it produce free radical, and then a series of grafting, polymerization reaction occur, make material surface form required functional group.And other particles (such as electronics, ion etc.) that are present in equally in the plasma are also constantly bombarding material surface, make it to degrade, and the side effects such as etching have destroyed material surface, have affected treatment effect.
Summary of the invention
Defective in view of above-mentioned prior art existence, the objective of the invention is to propose a kind of Novel plasma processing device, expand plasma for the range of application of some sensitive material or large tracts of land material, the side reactions such as electronics or ion are saved cost to the impact for the treatment of effect in the optimization plasma.
Purpose of the present invention will be achieved by the following technical programs:
A kind of Novel plasma processing device, it is characterized in that: described processing unit integral body is in subnormal ambient, it comprises inner tube, insulated tube and outer tube that from-inner-to-outer is nested, wherein inner tube connects high frequency electric source, outer tube ground connection, both are metal tube for this, and both separate insulation by the insulated tube of centre; Three layers of sleeve structure one end of described processing unit are made as gas source interface, other end sealing, and processing unit penetrates inner tube, insulated tube and outer tube and is provided with at least one round, the distance of the relatively pending material of described round satisfies electronics or ion oneself elimination in the plasma, only keeps excited state particle.
Further, described round is that relative inner and outer pipe aperture, insulated tube aperture is contraction-like fluidic architecture.
Further, extend axially on three of described processing unit layers of sleeve structure to arrange and be provided with two above rounds; Perhaps on three of described processing unit layers of sleeve structure axially Heterogeneous Permutation be provided with two above rounds; Or be provided with two above rounds along the arrangement of same sagittal plane on three layers of sleeve structure of described processing unit.
Further, described processing unit is provided with for driving and self moves radially, the pending material of large tracts of land is carried out plasma surface treatment.
Compare to conventional plasma processing apparatus, the application implementation of plasma processing apparatus of the present invention, its outstanding effect is:
Under identical discharge power, the plasma particle energy that this structure ejects is high, and particle concentration is large, is more suitable for some more unmanageable materials; Owing to possess long-range advantage, the side reaction of this structure processing material is less, and processing intent is purer, has reduced the damage that material is shown, thermal stress is lower simultaneously, and this structure can be processed sensitive material.
Following constipation closes the embodiment accompanying drawing, the specific embodiment of the present invention is described in further detail, so that technical solution of the present invention is easier to understand, grasp.
Description of drawings
Fig. 1 is the radially cutaway sectional view of plasma processing apparatus of the present invention;
Fig. 2 is the enlarged diagram of round shown in Figure 1.
Embodiment
In the face of the surface treatment drawback that plasma described in the background technology exists, usually select the remote plasma process of surface treatment.So-called long-range, refer to the direct generation zone of object being treated away from plasma.Because its life-span of each material contained in the plasma is not identical, electronics wherein, the rate of disappearance of ion is 10
-7Cm
3/ s, and the rate of disappearance of the excited state particle that plays a key effect is 10
-33Cm
3/ s is so the excited state particle life-span of high energy is longer.Plasma is suitably drawn generation zone (being region of discharge) can be good at getting rid of short electronics of life-span, ion etc., and long high energy particle of reservation life-span, so just, the adverse effect of electronics, ion etc. is dropped to minimum, thereby make reaction pure more smoothly.
The present invention is a kind of structure of Low Temperature Plasma Treating material surface, claims again the hollow cathode structure.It is large that the plasma that this structure inspires has a particle energy, and particle concentration is high, and without the existence of the side reactions such as etching, be desirable low temperature plasma surface processing device.
As depicted in figs. 1 and 2, this plasma processing unit integral body is in subnormal ambient, and totally three tubes form from inside to outside, and its middle external tube 1 and inner tube 3 are metal tube, and intermediate insulation pipe 2 separates inner tube 3 and outer tube 1, and each pipe box nests together.These three layers of sleeve structure one ends are made as gas source interface, other end sealing, and processing unit penetrates inner tube, insulated tube and outer tube and is provided with at least one round 6, and the distance of the relatively pending material of described round satisfies electronics or ion oneself elimination in the plasma, only keeps excited state particle.By reference to the accompanying drawings, pending material 5 is positioned on the objective table 4, and above-mentioned distance is the distance of the relatively pending material 5 of round 6.Reacting gas 7 enters from inner tube 3 rear sides, and front seal makes gas from the round ejection of pipe lower end.
Further, round (being spout) is designed to fluidic architecture, makes its jeting effect best.Outer tube ground connection is served as anode, inner tube connects high frequency electric source and serves as negative electrode, because stopping of intermediate insulation pipe, electric field more is distributed in the round place that naked intercepts, reacting gas flows through and namely becomes high-octane plasma herein, pending material is positioned under the round, and the plasma of ejection carries out surface treatment to it.Because processing region is away from region of discharge, so this structure possesses the advantage of remote plasma simultaneously.
Carry out under the technological requirement of graft polymerization at logical monomer gas, the monomer pipe can be placed under the plasma spray round, effectively avoided the direct effect of high frequency electric source to the monomer pipe, can improve the quality of aggregation deposition, monomer gas can not pollute erosion electrode simultaneously.
Except above-mentioned illustrated embodiment, this structure updating space is larger, by position, size, the quantity of appropriate change round, makes it be applicable to the occasion of some special material.Specifically feasible scheme comprises extending axially on three layers of sleeve structure of this processing unit to arrange and is provided with two above rounds; Perhaps on three of this processing unit layers of sleeve structure axially Heterogeneous Permutation be provided with two above rounds; Or be provided with two above rounds along the arrangement of same sagittal plane on three layers of sleeve structure of this processing unit.For example some material only has certain part or certain several part to need to process, and other parts should not accepted processing, so spout can be able to be realized in alignment with the need treatment sites.Simultaneously, this structure tube suitably lengthens, and moves radially simultaneously, can carry out the plasma surface treatment of large tracts of land material, so that industrial applications.
Compare to conventional plasma processing apparatus, the application implementation of plasma processing apparatus of the present invention, its outstanding effect is: under identical discharge power, the plasma particle energy that this structure ejects is high, particle concentration is large, is more suitable for some more unmanageable materials; Owing to possess long-range advantage, the side reaction of this structure processing material is less, and processing intent is purer, has reduced the damage that material is shown, thermal stress is lower simultaneously, and this structure can be processed sensitive material.
Claims (4)
1. Novel plasma processing device, it is characterized in that: described processing unit integral body is in subnormal ambient, it comprises inner tube, insulated tube and outer tube that from-inner-to-outer is nested, wherein inner tube connects high frequency electric source, outer tube ground connection, described inner and outer tubes are metal tube, and both separate insulation by the insulated tube of centre; Three layers of sleeve structure one end of described processing unit are made as gas source interface, other end sealing, and processing unit penetrates inner tube, insulated tube and outer tube and is provided with at least one round, described round is that the insulated tube aperture is contraction-like fluidic architecture with respect to inner tube aperture, outer tube aperture, and wherein contraction-like is aperture ratio inner tube aperture, all little state in outer tube aperture of insulated tube; And described processing unit is provided with the driver module that self moves radially, the pending material of large tracts of land is carried out plasma surface treatment for driving, satisfy electronics or ion oneself elimination in the plasma with the distance of guaranteeing the relatively pending material of described round, only keep excited state particle.
2. a kind of Novel plasma processing device according to claim 1 is characterized in that: extend axially arrangement on three layers of sleeve structure of described processing unit and be provided with two above rounds.
3. a kind of Novel plasma processing device according to claim 1 is characterized in that: on three layers of sleeve structure of described processing unit axially Heterogeneous Permutation be provided with two above rounds.
4. a kind of Novel plasma processing device according to claim 1 is characterized in that: be provided with two above rounds along the arrangement of same sagittal plane on three layers of sleeve structure of described processing unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110227844 CN102291924B (en) | 2011-08-10 | 2011-08-10 | Novel plasma treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110227844 CN102291924B (en) | 2011-08-10 | 2011-08-10 | Novel plasma treatment device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102291924A CN102291924A (en) | 2011-12-21 |
| CN102291924B true CN102291924B (en) | 2013-03-20 |
Family
ID=45337951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110227844 Expired - Fee Related CN102291924B (en) | 2011-08-10 | 2011-08-10 | Novel plasma treatment device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102291924B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035464A (en) * | 2012-12-26 | 2013-04-10 | 苏州工业职业技术学院 | Hollow cathode tube with water-cooling effect |
| CN115568081B (en) * | 2022-09-26 | 2023-06-30 | 四川大学 | Broad-width jet plasma torch and jet method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6214249B1 (en) * | 1996-04-15 | 2001-04-10 | The Boeing Company | Surface modification using an atmospheric pressure glow discharge plasma source |
| CN2604846Y (en) * | 2003-02-26 | 2004-02-25 | 王守国 | Atmospheric radio-frequency cylinder external emission cold plasma generator |
| CN1489426A (en) * | 2002-10-11 | 2004-04-14 | 杨易正 | Constant-pressure radio frequency cold plasma system and spray gun thereof |
| CN1525803A (en) * | 2003-02-27 | 2004-09-01 | 王守国 | Normal pressure radio frequency and DC mixed type cold plasma system and spray gun thereof |
| CN101583233A (en) * | 2009-03-24 | 2009-11-18 | 新奥光伏能源有限公司 | Normal-pressure plasma device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5961772A (en) * | 1997-01-23 | 1999-10-05 | The Regents Of The University Of California | Atmospheric-pressure plasma jet |
| US7025856B2 (en) * | 2001-02-02 | 2006-04-11 | The Regents Of The University Of California | Processing materials inside an atmospheric-pressure radiofrequency nonthermal plasma discharge |
-
2011
- 2011-08-10 CN CN 201110227844 patent/CN102291924B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6214249B1 (en) * | 1996-04-15 | 2001-04-10 | The Boeing Company | Surface modification using an atmospheric pressure glow discharge plasma source |
| CN1489426A (en) * | 2002-10-11 | 2004-04-14 | 杨易正 | Constant-pressure radio frequency cold plasma system and spray gun thereof |
| CN2604846Y (en) * | 2003-02-26 | 2004-02-25 | 王守国 | Atmospheric radio-frequency cylinder external emission cold plasma generator |
| CN1525803A (en) * | 2003-02-27 | 2004-09-01 | 王守国 | Normal pressure radio frequency and DC mixed type cold plasma system and spray gun thereof |
| CN101583233A (en) * | 2009-03-24 | 2009-11-18 | 新奥光伏能源有限公司 | Normal-pressure plasma device |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2004-527071A 2004.09.02 |
| 王辉等.管状电极介质阻挡放电和介质阻挡电晕放电的研究.《高压电器》.2006,第42卷(第2期), * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102291924A (en) | 2011-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI427669B (en) | Apparatus for treating large area substrate using hollow cathode plasma | |
| CN109538432B (en) | Spiral wave plasma propulsion device without neutralizer | |
| CN102291924B (en) | Novel plasma treatment device | |
| CN106856644A (en) | Plasma jet device | |
| CN103426706A (en) | Microwave ion source | |
| CN102477547B (en) | Plasma processing apparatus | |
| CN202183908U (en) | Novel plasma processing device | |
| CN202111925U (en) | Multi-stage DC arc discharge plasma generating device with three cathodes | |
| CN105854759A (en) | Material surface low-temperature plasma modification method and device | |
| CN111867226A (en) | Plasma jet generating system capable of recycling gas | |
| CN101307437B (en) | Radio frequency electrode and film preparing device | |
| CN103274501B (en) | A kind of method of atmosphere pressure plasma jet flow liquid phase algae removal and device | |
| CN112543543A (en) | Plasma discharge device | |
| CN202183907U (en) | Plasma spray gun | |
| CN103035464A (en) | Hollow cathode tube with water-cooling effect | |
| CN103794462A (en) | Ultrasonic atomization plasma processing device | |
| CN109119322B (en) | Magnetic enhanced plasma source | |
| CN103037610B (en) | Launching device for single electrode producing low-temperature plasma flow under the atmospheric pressure condition | |
| CN102291923A (en) | Plasma gun | |
| CN102796987A (en) | Gas ion source device | |
| CN204325472U (en) | A kind of vacuum tank for target spraying | |
| CN203233588U (en) | Emitting device with single electrode generation of low temperature plasma flow under atmospheric pressure condition | |
| CN203588973U (en) | Liquid material plasma processing device | |
| CN103596349A (en) | Jet plasma water-cooling spraying gun | |
| CN105792496A (en) | Atmospheric pressure plasma spraying gun |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211022 Address after: Room 1108-1, floor 11, No. 28, Dongwu North Road, Wuzhong District, Suzhou, Jiangsu 215000 Patentee after: Suzhou deruiyuan Material Technology Co.,Ltd. Address before: No. 1168, Wuzhong Avenue, Wuzhong District, Suzhou, Jiangsu 215104 Patentee before: Suzhou Vocational Institute of Industrial Technology |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130320 |