CN102291924A - Novel plasma treatment device - Google Patents
Novel plasma treatment device Download PDFInfo
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- CN102291924A CN102291924A CN 201110227844 CN201110227844A CN102291924A CN 102291924 A CN102291924 A CN 102291924A CN 201110227844 CN201110227844 CN 201110227844 CN 201110227844 A CN201110227844 A CN 201110227844A CN 102291924 A CN102291924 A CN 102291924A
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Abstract
The invention discloses a novel plasma treatment device. The device is wholly in the negative pressure environment and comprises an inner tube, an insulating tube and an outer tube which are nested with each other from inside to outside, wherein the inner tube is connected with a high-frequency power supply; the outer tube is earthed; the inner tube and the outer tube are metal tubes and are insulated by the intermediate insulating tube; one end of the three-layer sleeve structure of the device is provided with a gas source interface and the other end is closed; the device is provided with at least a row hole penetrating through the inner tube, the insulating tube and the outer tube; and the distances between the row holes and the material to be treated satisfy the condition that the electrons or ions in the plasma are eliminated per se and only particles in the excited state are remained. The device has the following prominent effects: under the same discharge power, the plasma particles jetted by the structure have high energy and high concentration and are more suitable for the materials which are more difficult to treat; because of the remote advantage, the structure has less side reactions and purer treatment aim, reduces the damage to the material surface, simultaneously has lower thermal stress and can be used for treating the sensitive materials.
Description
Technical field
The present invention relates to a kind of device that is used for material is carried out the Surface Physical Chemistry processing, relate in particular to a kind of spray gun device that is applied to the dry type gas-phase reaction, high energy high-density plasma air-flow is provided.
Background technology
The low temperature plasma process of surface treatment is meant under negative pressure and (is generally tens handkerchiefs), and certain gas is applied high-frequency electric field, makes it be excited into plasmoid.Plasma is as the 4th attitude of material, wherein comprise a large amount of electronics, ion and free radical isoreactivity particle, these active particles collide the surface of processed object, corresponding physics or chemical reaction can take place, the character of material surface is changed or give new function,, satisfy the needs of practical application to reach its processing intent.
Compare traditional material surface treatment method, plasma treatment has following advantage: 1. the plasma treatment material surface belongs to dry process, is different from conventional liquid phase processing method, environment is not polluted clean environment firendly; 2. plasma reaction speed is very fast, and treatment effeciency is higher, so energy consumption is less relatively, processing cost is lower; 3. plasma treatment only relates to material surface, does not influence the performance of processed material itself; 4. the plasma treatment application scenario is comparatively extensive, because its distinctive gas phase reaction process, low temperature plasma is widely applied the field of surface treatment in precision components.
Present domestic low temperature plasma is used and is also lagged behind developed countries significantly, but market prospects are comparatively considerable.Yet in traditional plasma treatment, because the diversity of plasma content, so its surface treatment reaction to process object is not single.For example the excited state particle in the plasma is because contained energy is higher, it collides and can interrupt some covalent bond after material or the monomer gas and make it produce free radical, and then a series of grafting, polymerization reaction take place, make material surface form required functional group.And other particles (as electronics, ion etc.) that are present in equally in the plasma are also constantly bombarding material surface, make it to degrade, and side effects such as etching have destroyed material surface, have influenced treatment effect.
Summary of the invention
Defective in view of above-mentioned prior art existence, the objective of the invention is to propose a kind of novel plasma processing unit, expand the range of application of plasma at some sensitive material or large tracts of land material, side reactions such as electronics or ion are saved cost to the influence of treatment effect in the optimization plasma.
Purpose of the present invention will be achieved by the following technical programs:
A kind of novel plasma processing unit, it is characterized in that: described processing unit integral body is in subnormal ambient, it comprises interior pipe, insulated tube and outer tube that from-inner-to-outer is nested, wherein interior pipe connects high frequency electric source, outer tube ground connection, both are metal tube for this, and both separate insulation by the insulated tube of centre; Three layers of sleeve structure one end of described processing unit are made as gas source interface, other end sealing, and processing unit penetrates interior pipe, insulated tube and outer tube and is provided with at least one round, the distance of the pending relatively material of described round satisfies electronics or ion oneself elimination in the plasma, only keeps excited state particle.
Further, described round is that relative inner and outer pipe aperture, insulated tube aperture is contraction-like fluidic architecture.
Further, extend axially on three of described processing unit layers of sleeve structure to arrange and be provided with two above rounds; Perhaps on three of described processing unit layers of sleeve structure axially dislocation arrange and be provided with two above rounds; Or the same sagittal plane arrangement of three layers of sleeve structure upper edge of described processing unit is provided with two above rounds.
Further, described processing unit is provided with to be used to drive and self moves radially, large tracts of land pending material is carried out plasma surface treatment.
Compare to conventional plasma processing apparatus, the application implementation of plasma processing apparatus of the present invention, its outstanding effect is:
Under identical discharge power, the plasma particle energy height that this structure ejects, particle concentration is big, is more suitable for some more unmanageable materials; Owing to possess long-range advantage, the side reaction of this structure treatment material is less, and processing intent is purer, has reduced the damage that material is shown, thermal stress is lower simultaneously, and this structure can be handled sensitive material.
Following constipation closes the embodiment accompanying drawing, the specific embodiment of the present invention is described in further detail, so that technical solution of the present invention is easier to understand, grasp.
Description of drawings
Fig. 1 is the radially cutaway sectional view of plasma processing apparatus of the present invention;
Fig. 2 is the enlarged diagram of round shown in Figure 1.
Embodiment
In the face of the surface treatment drawback that plasma described in the background technology exists, select the remote plasma process of surface treatment usually.So-called long-range, be meant the direct generation zone of object being treated away from plasma.Because contained its life-span of each material and inequality in the plasma, electronics wherein, the rate of disappearance of ion is 10
-7Cm
3/ s, and the rate of disappearance of the excited state particle that plays a key effect is 10
-33Cm
3/ s is so the excited state particle life-span of high energy is longer.Plasma is suitably drawn generation zone (being region of discharge) can be good at getting rid of short electronics of life-span, ion etc., and long high energy particle of reservation life-span, so just, the adverse effect of electronics, ion etc. is dropped to minimum, thereby make reaction pure more smoothly.
The present invention is a kind of structure of Low Temperature Plasma Treating material surface, claims the hollow cathode structure again.It is big that the plasma that this structure inspires has a particle energy, the particle concentration height, and do not have the existence of side reactions such as etching, be desirable low temperature plasma surface processing device.
As depicted in figs. 1 and 2, this plasma processing unit integral body is in subnormal ambient, and totally three tubes are formed from inside to outside, and its middle external tube 1 and interior pipe 3 are metal tube, and intermediate insulation pipe 2 separates interior pipe 3 with outer tube 1, and each pipe box nests together.These three layers of sleeve structure one ends are made as gas source interface, other end sealing, and processing unit penetrates interior pipe, insulated tube and outer tube and is provided with at least one round 6, and the distance of the pending relatively material of described round satisfies electronics or ion oneself elimination in the plasma, only keeps excited state particle.In conjunction with the accompanying drawings, pending material 5 is positioned on the objective table 4, and above-mentioned distance is the distance of the pending relatively material 5 of round 6.Reacting gas 7 enters from interior pipe 3 rear sides, and front seal makes the round ejection of gas from the pipe lower end.
Further, round (being spout) is designed to fluidic architecture, makes its jeting effect the best.Outer tube ground connection is served as anode, interior pipe connects high frequency electric source and serves as negative electrode, because stopping of intermediate insulation pipe, electric field more is distributed in the round place that naked intercepts, reacting gas flows through and promptly becomes high-octane plasma herein, pending material is positioned under the round, and the plasma of ejection carries out surface treatment to it.Because processing region is away from region of discharge, so this structure possesses the advantage of remote plasma simultaneously.
Carry out under the technological requirement of graft polymerization at logical monomer gas, the monomer pipe can be placed under the plasma spray round, effectively avoided the direct effect of high frequency electric source to the monomer pipe, can improve the quality of polymerization deposition, monomer gas can not pollute erosion electrode simultaneously.
Except that above-mentioned illustrated embodiment, this structure updating space is bigger, by position, size, the quantity of appropriate change round, makes it be applicable to the occasion of some special material.Specifically feasible scheme comprises extending axially on three layers of sleeve structure of this processing unit to arrange and is provided with two above rounds; Perhaps on three of this processing unit layers of sleeve structure axially dislocation arrange and be provided with two above rounds; Or the same sagittal plane arrangement of three layers of sleeve structure upper edge of this processing unit is provided with two above rounds.For example some material has only certain part or certain several part to need to handle, and other parts should not accepted processing, so spout can be able to be realized in alignment with the need into treatment sites.Simultaneously, this structure tube suitably extends, and moves radially simultaneously, can carry out the plasma surface treatment of large tracts of land material, so that industrial applications.
Compare to conventional plasma processing apparatus, the application implementation of plasma processing apparatus of the present invention, its outstanding effect is: under identical discharge power, the plasma particle energy height that this structure ejects, particle concentration is big, is more suitable for some more unmanageable materials; Owing to possess long-range advantage, the side reaction of this structure treatment material is less, and processing intent is purer, has reduced the damage that material is shown, thermal stress is lower simultaneously, and this structure can be handled sensitive material.
Claims (6)
1. novel plasma processing unit, it is characterized in that: described processing unit integral body is in subnormal ambient, it comprises interior pipe, insulated tube and outer tube that from-inner-to-outer is nested, wherein interior pipe connects high frequency electric source, outer tube ground connection, both are metal tube for this, and both separate insulation by the insulated tube of centre; Three layers of sleeve structure one end of described processing unit are made as gas source interface, other end sealing, and processing unit penetrates interior pipe, insulated tube and outer tube and is provided with at least one round, the distance of the pending relatively material of described round satisfies electronics or ion oneself elimination in the plasma, only keeps excited state particle.
2. a kind of novel plasma processing unit according to claim 1 is characterized in that: described round is that relative inner and outer pipe aperture, insulated tube aperture is contraction-like fluidic architecture.
3. a kind of novel plasma processing unit according to claim 1 is characterized in that: extend axially arrangement on three layers of sleeve structure of described processing unit and be provided with two above rounds.
4. a kind of novel plasma processing unit according to claim 1 is characterized in that: axially misplacing to arrange on three layers of sleeve structure of described processing unit is provided with two above rounds.
5. a kind of novel plasma processing unit according to claim 1 is characterized in that: same sagittal plane, three layers of sleeve structure upper edge of described processing unit is arranged and is provided with two above rounds.
6. a kind of novel plasma processing unit according to claim 1 is characterized in that: described processing unit is provided with and is used to drive the driver module that self moves radially, the pending material of large tracts of land is carried out plasma surface treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110227844 CN102291924B (en) | 2011-08-10 | 2011-08-10 | Novel plasma treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110227844 CN102291924B (en) | 2011-08-10 | 2011-08-10 | Novel plasma treatment device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102291924A true CN102291924A (en) | 2011-12-21 |
| CN102291924B CN102291924B (en) | 2013-03-20 |
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ID=45337951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110227844 Active CN102291924B (en) | 2011-08-10 | 2011-08-10 | Novel plasma treatment device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035464A (en) * | 2012-12-26 | 2013-04-10 | 苏州工业职业技术学院 | Hollow cathode tube with water-cooling effect |
| CN115568081A (en) * | 2022-09-26 | 2023-01-03 | 四川大学 | Wide-width jet plasma torch and jet method thereof |
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| WO1998035379A1 (en) * | 1997-01-23 | 1998-08-13 | The Regents Of The University Of California | Atmospheric-pressure plasma jet |
| US6214249B1 (en) * | 1996-04-15 | 2001-04-10 | The Boeing Company | Surface modification using an atmospheric pressure glow discharge plasma source |
| CN2604846Y (en) * | 2003-02-26 | 2004-02-25 | 王守国 | Atmospheric radio-frequency cylinder external emission cold plasma generator |
| CN1489426A (en) * | 2002-10-11 | 2004-04-14 | 杨易正 | Constant-pressure radio frequency cold plasma system and spray gun thereof |
| CN1525803A (en) * | 2003-02-27 | 2004-09-01 | 王守国 | Normal pressure radio frequency and DC mixed type cold plasma system and spray gun thereof |
| JP2004527071A (en) * | 2001-02-02 | 2004-09-02 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Material processing in atmospheric pressure radio frequency non-thermal plasma discharge |
| CN101583233A (en) * | 2009-03-24 | 2009-11-18 | 新奥光伏能源有限公司 | Normal-pressure plasma device |
-
2011
- 2011-08-10 CN CN 201110227844 patent/CN102291924B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6214249B1 (en) * | 1996-04-15 | 2001-04-10 | The Boeing Company | Surface modification using an atmospheric pressure glow discharge plasma source |
| WO1998035379A1 (en) * | 1997-01-23 | 1998-08-13 | The Regents Of The University Of California | Atmospheric-pressure plasma jet |
| JP2004527071A (en) * | 2001-02-02 | 2004-09-02 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Material processing in atmospheric pressure radio frequency non-thermal plasma discharge |
| CN1489426A (en) * | 2002-10-11 | 2004-04-14 | 杨易正 | Constant-pressure radio frequency cold plasma system and spray gun thereof |
| CN2604846Y (en) * | 2003-02-26 | 2004-02-25 | 王守国 | Atmospheric radio-frequency cylinder external emission cold plasma generator |
| CN1525803A (en) * | 2003-02-27 | 2004-09-01 | 王守国 | Normal pressure radio frequency and DC mixed type cold plasma system and spray gun thereof |
| CN101583233A (en) * | 2009-03-24 | 2009-11-18 | 新奥光伏能源有限公司 | Normal-pressure plasma device |
Non-Patent Citations (1)
| Title |
|---|
| 《高压电器》 20060430 王辉等 管状电极介质阻挡放电和介质阻挡电晕放电的研究 第42卷, 第2期 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035464A (en) * | 2012-12-26 | 2013-04-10 | 苏州工业职业技术学院 | Hollow cathode tube with water-cooling effect |
| CN115568081A (en) * | 2022-09-26 | 2023-01-03 | 四川大学 | Wide-width jet plasma torch and jet method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102291924B (en) | 2013-03-20 |
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Effective date of registration: 20211022 Address after: Room 1108-1, floor 11, No. 28, Dongwu North Road, Wuzhong District, Suzhou, Jiangsu 215000 Patentee after: Suzhou deruiyuan Material Technology Co.,Ltd. Address before: No. 1168, Wuzhong Avenue, Wuzhong District, Suzhou, Jiangsu 215104 Patentee before: Suzhou Vocational Institute of Industrial Technology |
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