CN102282759A - 采用共模电压调节的可调谐lc振荡器 - Google Patents

采用共模电压调节的可调谐lc振荡器 Download PDF

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CN102282759A
CN102282759A CN2008801158335A CN200880115833A CN102282759A CN 102282759 A CN102282759 A CN 102282759A CN 2008801158335 A CN2008801158335 A CN 2008801158335A CN 200880115833 A CN200880115833 A CN 200880115833A CN 102282759 A CN102282759 A CN 102282759A
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capacitance circuit
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CN102282759B (zh
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大卫·迪佩雷
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Koninklijke Philips NV
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
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    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
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    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
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    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
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    • H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
    • H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
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    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1275—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency
    • H03B5/1278—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency the parameter being an amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range
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    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1275—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency
    • H03B5/129—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency the parameter being a bias voltage or a power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/03—Varying beside the frequency also another parameter of the oscillator in dependence on the frequency
    • H03B2201/038—Varying beside the frequency also another parameter of the oscillator in dependence on the frequency the parameter being a bias voltage or a power supply

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Abstract

本发明提供了一种LC振荡器，该LC振荡器实现了改进的相位噪声性能。一种可变频振荡器包括：可变电源(I)、振荡器储能电路(T)、包括MOS开关在内的可变电容电路(VC1)、以及振荡器储能电路电压共模调节电路(R)。当改变可变电容电路的电容以改变可变频振荡器的输出频率时，调节共模电压以减小在一个振荡周期中输出信号的偏移期间MOS在反型状态与耗尽状态之间的转变。

Description

采用共模电压调节的可调谐LC振荡器
背景技术
典型的无线收发机使用至少一个高频振荡器在发射时产生调制载波或在接收时对输入的调制信号进行下变频。
对于许多无线标准(例如，GSM、WCDMA、蓝牙、WLAN等)来说，在无线电收发机中使用的振荡器的类型是LC型振荡器。出于成本原因，CMOS成为了设计无线收发机中的优选工艺。使用LC振荡器使得可以实现对于许多蜂窝、WPAN和WLAN系统来说可接受的相位噪声。然而，可能经常随输入功率的变化而观察到相位噪声性能的劣化。
发明内容
本发明提供了一种实现改善的相位噪声性能的LC振荡器。可变频振荡器包括可变电源、振荡器储能电路、包括MOS开关在内的可变电容电路、以及振荡器储能电路电压共模调节电路。当改变可变电容电路的电容以改变可变频振荡器的输出频率时，调节共模电压以减小在一个振荡周期中输出信号的偏移期间MOS开关在反型状态(inversionstate)与耗尽状态之间的转变。
通过结合参考附图来阅读和理解以下所述示例实施例的详细描述，将理解其他特征和优点，以下提供了附图的简要描述。
附图说明
图1是第一LC振荡器的图。
图2是另一LC振荡器的图。
图3是另一LC振荡器的图。
具体实施方式
以下给出了本发明的更详细描述。本领域技术人员将认识到，以下详细描述仅仅是说明性的，并不旨在以任何方式进行限制。得益于本公开的技术人员将容易想到本发明的其他实施例。现在将详细参考附图所示的本发明实施例。在所有附图以及下面的详细描述中将使用相同的参考指示符来表示相同或相似的部件。
参考图1，示出了具有改善的相位噪声性能的LC振荡器的图示。稳流源I耦合至电源电压Vdd，并向振荡器提供必要的电流以产生振荡条件并确保充分的振荡幅度。使用控制信号CTLI来设置规定的(regulated)电流。稳流源I耦合至图1中被示为中心抽头电感器的电感器L。第一可变电容电路VC1和第二可变电容电路VC2与电感器L并联。电感器L、第一可变电容电路VC1和第二可变电容电路VC2共同构成谐振储能电路T。第一可变电容电路VC1可以基于被作为开关来控制的MOS晶体管，并且可以用于粗略地控制振荡器频率以执行频带调谐。
更具体地，在第一可变电容电路中，提供了n对MOS晶体管MT1，MT1’，MT2，MT2’，...，MTn，MTn’。所有的MOS晶体管的漏极和源极都连接在一起。MT1，MT2，...，MTn的栅极连接至储能电路T一侧的电路节点N1。MT1’，MT2’，...，MTn’的栅极连接至储能电路T相对侧的电路节点N2。成对的MOS晶体管的漏极和源极连接在一起并且连接至由n个缓冲器电路B1-Bn中相应的一个所产生的控制信号。响应于数字控制字BT，缓冲器电路导通或截止MOS晶体管对，以改变可变电容电路VC1的电容。
第二可变电容电路VC2可以是用于精确控制振荡器频率的模拟调谐电路。在所示的实施例中，变容二极管D1通过电容器C来AC耦合至振荡器储能电路的节点N1，变容二极管D1’通过电容器C’来AC耦合至振荡器储能电路的节点N2。结变容二极管(junction varicap)D1和D1’的控制电极连接在一起并连接至模拟调谐信号AT。
交叉耦合的晶体管对M、M’用于驱动储能电路并维持振荡。分别在节点N1和N2处得到输出信号OUTa和OUTb。
使用可变电阻器R来提供振荡器储能电路电压共模调节。使用控制信号CTLR来设置可变电阻器R的电阻。使用可变电阻器R，可以针对限定的(规定的)电流来控制储能电路共模电压。通过执行该操作，可以最优地调节共模电压，使得MT1-MTn和MT1’-MTn’中的MOS调谐开关并不因振荡幅度而改变状态(从反型到耗尽，或反之亦然)。通过使MOS开关保持在对于振荡幅度不敏感的一个状态(反型或耗尽)，振荡器的相位噪声不会(由于MOS开关中的反型/耗尽变化)而变差，从而使振荡器相位噪声最小化。
换言之，根据频率来适配共模电压，以使频带开关VC1的AM至FM转换最小化。对于低频率，大多数MOS晶体管处于反型状态，从而增大了共模电压。对于高频，大多数MOS晶体管处于耗尽状态，从而减小了共模电压。可以通过经验或者通过仿真来得到针对不同频率的共模电压的具体所需设置，并将这些设置存储在用于控制共模电压的查找表中。在示例实施例中，得到以下值：
Figure GPA00001137423500031
控制电路CTL提供控制信号BT、AT、CTLI和CTLR。
参考图2，示出了LC振荡器的另一实施例。在该实施例中，使用MOS开关，采用与可变电容电路VC1相类似的方式来构造用于执行精细调谐的可变电容电路VC2。使用数字字FT来控制该可变电容电路VC2。
参考图3，示出了LC振荡器的另一实施例。在该实施例中，针对交叉耦合的晶体管对M1、M1’使用PMOS晶体管。
尽管详细描述了本发明的实施例，然而应理解，在不脱离所附权利要求所限定的本发明的精神和范围的前提下，可以进行各种改变、替换和修改。

Claims (20)

1.一种可调频振荡器，包括：
电源(I)；
储能电路(T)，耦合至可变电源，所述储能电路包括：
电感；以及
第一可变电容电路(VC1)，包括MOS开关，被控制用于改变可调频振荡器的频率；
交叉耦合的晶体管对(M，M’)，耦合至储能电路；
共模电压调节电路(R)，耦合至交叉耦合的晶体管对以及基准电压；以及
控制电路(CTL)，用于当频率改变时调节共模电压以减小MOS开关的状态改变，从而减小相位噪声。
2.根据权利要求1所述的设备，其中，调节共模电压以减小在一个振荡周期中输出信号的偏移期间MOS开关在反型状态与耗尽状态之间的转变。
3.根据权利要求2所述的设备，其中，交叉耦合的晶体管对包括限定第一电流路径的第一MOS晶体管和限定第二电流路径的第二MOS晶体管，第一MOS晶体管和第二MOS晶体管的源极耦合至基准电压，第一MOS晶体管的栅极耦合至第二MOS晶体管的漏极，第二MOS晶体管的栅极耦合至第一MOS晶体管的漏极。
4.根据权利要求3所述的设备，其中，第一MOS晶体管和第二MOS晶体管都是NMOS晶体管。
5.根据权利要求3所述的设备，其中，第一MOS晶体管和第二MOS晶体管都是PMOS晶体管。
6.根据权利要求3所述的设备，其中，所述电源是稳流源。
7.根据权利要求3所述的设备，其中，第一可变电容电路包括至少一对MOS晶体管，该对MOS晶体管中两个晶体管的漏极和源极都耦合至控制节点，该对MOS晶体管中一个晶体管的栅极耦合至第一电流路径，该对MOS晶体管中另一个晶体管的栅极耦合至第二电流路径。
8.根据权利要求7所述的设备，包括：缓冲器电路，接收数字控制信号并响应于所述数字控制信号来驱动控制节点以控制第一可变电容电路的电容。
9.根据权利要求7所述的设备，其中，第一可变电容电路包括多对MOS晶体管，每一对MOS晶体管中的两个晶体管的漏极和源极都耦合至多个控制节点中的相应控制节点，每一对MOS晶体管中一个晶体管的栅极耦合至第一电流路径，所述每一对MOS晶体管中另一晶体管的栅极耦合至第二电流路径。
10.根据权利要求7所述的设备，包括多个缓冲器电路，每个缓冲器电路接收数字控制信号并响应于所述数字控制信号来驱动相应的一个控制节点以控制第一可变电容电路的电容。
11.根据权利要求10所述的设备，其中，第一可变电容电路被布置为实现可调频振荡器的粗略频率控制。
12.根据权利要求3所述的设备，包括第二可变电容电路，所述第二可变电容电路包括至少一对MOS晶体管，该对MOS晶体管中两个晶体管的漏极和源极耦合至控制节点，该对MOS晶体管中一个晶体管的栅极耦合至第一电流路径，该对MOS晶体管中另一晶体管的栅极耦合至第二电流路径。
13.根据权利要求12所述的设备，包括：缓冲器电路，接收数字控制信号并响应于所述数字控制信号来驱动控制节点以控制第二可变电容电路的电容。
14.根据权利要求12所述的设备，其中，第二可变电容电路包括多对MOS晶体管，每一对MOS晶体管中的两个晶体管的漏极和源极耦合至多个控制节点中相应的控制节点，每一对MOS晶体管中一个晶体管的栅极耦合至第一电流路径，所述每一对MOS晶体管中另一晶体管的栅极耦合至第二电流路径。
15.根据权利要求14所述的设备，包括多个缓冲器电路，每一个缓冲器电路接收数字控制信号并响应于所述数字控制信号来驱动相应的一个控制节点以控制第二可变电容电路的电容。
16.根据权利要求15所述的设备，其中，第二可变电容电路被布置为实现可调频振荡器的精细频率控制。
17.根据权利要求3所述的设备，包括第二可变电容电路，所述第二可变电容电路包括至少一对变容二极管，该对变容二极管中两个变容二极管的阴极耦合至控制节点，该对变容二极管中一个变容二极管的阳极耦合至第一电流路径，该对变容二极管中另一变容二极管的阳极耦合至第二电流路径。
18.根据权利要求15所述的设备，其中，第二可变电容电路具有施加到该第二可变电容电路的模拟调谐信号，并且被布置为实现可调频振荡器的精细频率控制。
19.一种控制可变频振荡器的方法，所述可变频振荡器具有电源(I)、振荡器储能电路(T)、可变电容电路(VC1)以及振荡器储能电路电压共模调节电路(R)，所述可变电容电路(VC1)包括控制用于改变可调频振荡器的频率的MOS开关，所述方法包括：
改变可变频振荡器的频率；以及
调节共模电压，以便减小在一个振荡周期中输出信号的偏移期间MOS开关在反型状态与耗尽状态之间的转变。
20.根据权利要求19所述的方法，包括：当频率减小时增大共模电压，以及当频率增大时减小共模电压。
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