JP2017512445A - トランスコンダクタンス(gm)デジェネレーションを使用する低雑音および低電力電圧制御発振器(VCO) - Google Patents
トランスコンダクタンス(gm)デジェネレーションを使用する低雑音および低電力電圧制御発振器(VCO) Download PDFInfo
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- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
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- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
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- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
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Abstract
Description
[35U.S.C.§119に基づく優先権の主張]
[0015]幾つかの態様により、共振タンク回路は、インダクタ−コンデンサ(LC)タンク回路を含む。
[0016]幾つかの態様により、基準電圧は、電気的グランドである。
[0017]本開示の幾つかの態様は、VCOを提供する。VCOは、概して、共振タンク回路と、共振タンク回路と接続されおよび可変トランスコンダクタンスを有する能動負トランスコンダクタンス回路と、発振信号を生成するために共振タンク回路および能動負トランスコンダクタンス回路を通じてバイアス電流をソースまたはシンクするためのバイアス電流回路と、を含む。
無線システム例
[0042]図1は、アクセスポイントおよびユーザ端末を有する無線通信システム100を示す。簡単のため、図1では1つのアクセスポイント110のみが示される。アクセスポイント(AP)は、概して、ユーザ端末と通信する固定局であり、基地局(BS)、発展型ノードB(eNB)、または何らかの他の用語でも呼ばれ得る。ユーザ端末(UT)は、固定型または移動型であり得、移動局(MS)、アクセス端末、ユーザ機器(UE)、局(STA)、クライアント、無線デバイス、または何らかの他の用語でも呼ばれ得る。ユーザ端末は、携帯電話、携帯情報端末(PDA)、ハンドヘルドデバイス、無線モデム、ラップトップコンピュータ、タブレット、パーソナルコンピュータ、等、のような無線デバイスであり得る。
電圧制御発振器例
[0053]典型的には、ミキサを使用して異なる周波数に対象となる信号を変換するために利用される信号を生成するために無線周波数フロントエンド(RFFE)内に局部発振器(LO)が含められる。ヘテロダイニングとして知られるこの周波数変換プロセスは、LO周波数および対象となる信号の周波数の和(sum)および差周波数(difference frequency)を生成する。和および差周波数は、ビート周波数と呼ばれる。LOの出力は周波数が安定し続けることが望ましい一方で、異なる周波数に同調することは、可変周波数発振器を使用することを示し、それは、安定性と同調性との間での妥協を含む。現代のシステムは、特定の同調範囲を有する安定した、同調可能なLOを生成するために電圧制御発振器(VCO)を有する周波数シンセサイザを使用する。
[0069]例えば、送信するための手段は、送信機(例えば、図2において描かれるユーザ端末120のトランシーバフロントエンド254または図2において示されるアクセスポイント110のトランシーバフロントエンド222)および/またはアンテナ(例えば、図2において描かれるユーザ端末120mのアンテナ252ma乃至252muまたは図2において示されるアクセスポイント110のアンテナ224a乃至224ap)を備え得る。受信するための手段は、受信機(例えば、図2において描かれるユーザ端末120のトランシーバフロントエンド254または図2において示されるアクセスポイント110のトランシーバフロントエンド222)および/またはアンテナ(例えば、図2において描かれるユーザ端末120mのアンテナ252ma乃至252muまたは図2において示されるアクセスポイント110のアンテナ224a乃至224ap)を備え得る。処理するための手段または決定するための手段は、処理システムを備え、それは、RXデータプロセッサ270、TXデータプロセッサ288、および/または図2において示されるユーザ端末120のコントローラ280のような1つまたは複数のプロセッサを含み得る。
Claims (30)
- 電圧制御発振器(VCO)であって、
共振タンク回路と、
クロス結合されたトランジスタと、
前記クロス結合されたトランジスタと基準電圧との間に接続されたインピーダンスと、を備える、
前記共振タンク回路と接続された能動負トランスコンダクタンス回路と、
発振信号を生成するために前記共振タンク回路および前記能動負トランスコンダクタンス回路を通じてバイアス電流をソースまたはシンクするためのバイアス電流回路と、を備える、電圧制御発振器(VCO)。 - 前記インピーダンスをプログラミング可能な形で分岐させるように構成されたスイッチをさらに備える、
請求項1に記載のVCO。 - 前記クロス結合されたトランジスタは、nチャネル金属酸化膜半導体(NMOS)電界効果トランジスタを備える、
請求項1に記載のVCO。 - 前記クロス結合されたトランジスタの各々のボディは、前記基準電圧と接続される、
請求項1に記載のVCO。 - 前記インピーダンスは、可変インピーダンスを備える、
請求項1に記載のVCO。 - 前記インピーダンスは、抵抗器である、
請求項1に記載のVCO。 - 前記インピーダンスは、インダクタを備える、
請求項1に記載のVCO。 - 前記能動負トランスコンダクタンス回路は、可変トランスコンダクタンスを有する、
請求項1に記載のVCO。 - 前記可変トランスコンダクタンスは、前記能動負トランスコンダクタンス回路内のトランジスタの前記実効サイズを変えることによって調整される、
請求項8に記載のVCO。 - 前記クロス結合されたトランジスタは、クロス結合されたpチャネル金属酸化膜半導体(PMOS)電界効果トランジスタと、クロス結合されたnチャネル金属酸化膜半導体(NMOS)電界効果トランジスタと、を備える、
請求項1に記載のVCO。 - 前記インピーダンスは、前記NMOSトランジスタと前記基準電圧との間に接続される、
請求項10に記載のVCO。 - 別のインピーダンスが、前記PMOSトランジスタと前記バイアス電流回路との間に接続される、
請求項11に記載のVCO。 - 前記インピーダンスまたは前記別のインピーダンスのうちの少なくとも1つをプログラミング可能な形で分岐させるように構成された少なくとも1個のスイッチをさらに備える、請求項12に記載のVCO。
- 前記バイアス電流回路は、カレントミラーを備える、
請求項1に記載のVCO。 - 前記共振タンク回路は、インダクタ−コンデンサ(LC)タンク回路を備える、
請求項1に記載のVCO。 - 前記基準電圧は、電気的グランドである、
請求項1に記載のVCO。 - 電圧制御発振器(VCO)であって、
共振タンク回路と、
前記共振タンク回路と接続されおよび可変トランスコンダクタンスを有する能動負トランスコンダクタンス回路と、
発振信号を生成するために前記共振タンク回路および前記能動負トランスコンダクタンス回路を通じてバイアス電流をソースまたはシンクするためのバイアス電流回路と、を備える、電圧制御発振器(VCO)。 - 前記可変トランスコンダクタンスは、前記能動負トランスコンダクタンス回路内のトランジスタの前記実効サイズを変えることによって調整される、
請求項17に記載のVCO。 - 前記能動負トランスコンダクタンス回路は、クロス結合されたトランジスタを備える、
請求項17に記載のVCO。 - 前記トランジスタは、nチャネル金属酸化膜半導体(NMOS)電界効果トランジスタを備える、
請求項19に記載のVCO。 - 前記トランジスタの各々のボディまたはソースのうちの少なくとも1つは、基準電圧と接続される、
請求項19に記載のVCO。 - 前記クロス結合されたトランジスタは、クロス結合されたpチャネル金属酸化膜半導体(PMOS)電界効果トランジスタと、クロス結合されたnチャネル金属酸化膜半導体(NMOS)電界効果トランジスタと、を備える、
請求項19に記載のVCO。 - 前記バイアス電流回路は、カレントミラーを備える、
請求項17に記載のVCO。 - 前記共振タンク回路は、インダクタ−コンデンサ(LC)タンク回路を備える、
請求項17に記載のVCO。 - 無線通信のための装置であって、
少なくとも1本のアンテナと、
前記少なくとも1本のアンテナを介して無線周波数(RF)信号を受信するように構成された受信機、または、前記少なくとも1本のアンテナを介して無線周波数(RF)信号を送信するように構成された送信機のうちの少なくとも1つと、を備え、前記受信機または前記送信機のうちの少なくとも1つは、
共振タンク回路と、
クロス結合されたトランジスタと、
前記クロス結合されたトランジスタと基準電圧との間に接続されたインピーダンスと、を備える、
前記共振タンク回路と接続された能動負トランスコンダクタンス回路と、
発振信号を生成するために前記共振タンク回路および前記能動負トランスコンダクタンス回路を通じてバイアス電流をソースまたはシンクするためのバイアス電流回路と、を備える、無線通信のための装置。 - 前記VCOは、前記インピーダンスをプログラミング可能な形で分岐させるように構成されたスイッチをさらに備える、
請求項25に記載の装置。 - 前記能動負トランスコンダクタンス回路は、前記能動負トランスコンダクタンス回路内のトランジスタの前記実効サイズを変えることによって調整される可変トランスコンダクタンスを有する、
請求項25に記載の装置。 - 前記クロス結合されたトランジスタの各々のボディは、前記基準電圧と接続される、
請求項25に記載の装置。 - 無線通信のための装置であって、
少なくとも1本のアンテナと、
前記少なくとも1本のアンテナを介して無線周波数(RF)信号を受信するように構成された受信機、または、前記少なくとも1本のアンテナを介して無線周波数(RF)信号を送信するように構成された送信機のうちの少なくとも1つと、を備え、前記受信機または前記送信機のうちの少なくとも1つは、
共振タンク回路と、
前記共振タンク回路と接続されおよび可変トランスコンダクタンスを有する能動負トランスコンダクタンス回路と、
発振信号を生成するために前記共振タンク回路および前記能動負トランスコンダクタンス回路を通じてバイアス電流をソースまたはシンクするためのバイアス電流回路と、を備える、無線通信のための装置。 - 前記可変トランスコンダクタンスは、前記能動負トランスコンダクタンス回路内のトランジスタの前記実効サイズを変えることによって調整される、
請求項29に記載の装置。
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PCT/US2015/016900 WO2015138105A1 (en) | 2014-03-11 | 2015-02-20 | LOW NOISE AND LOW POWER VOLTAGE-CONTROLLED OSCILLATOR (VCO) USING TRANSCONDUCTANCE (gm) DEGENERATION |
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