CN102264942B - 成膜装置和使用该成膜装置的基板的制造方法 - Google Patents

成膜装置和使用该成膜装置的基板的制造方法 Download PDF

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Publication number
CN102264942B
CN102264942B CN200980152358.3A CN200980152358A CN102264942B CN 102264942 B CN102264942 B CN 102264942B CN 200980152358 A CN200980152358 A CN 200980152358A CN 102264942 B CN102264942 B CN 102264942B
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China
Prior art keywords
substrate
rear portion
become
anterior
transport path
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CN200980152358.3A
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English (en)
Chinese (zh)
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CN102264942A (zh
Inventor
松村康晴
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Canon Anelva Corp
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Canon Anelva Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN200980152358.3A 2008-12-26 2009-12-24 成膜装置和使用该成膜装置的基板的制造方法 Active CN102264942B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008332853 2008-12-26
JP2008-332853 2008-12-26
PCT/JP2009/007193 WO2010073669A1 (ja) 2008-12-26 2009-12-24 成膜装置およびそれを用いた基板の製造方法

Publications (2)

Publication Number Publication Date
CN102264942A CN102264942A (zh) 2011-11-30
CN102264942B true CN102264942B (zh) 2014-03-19

Family

ID=42287310

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980152358.3A Active CN102264942B (zh) 2008-12-26 2009-12-24 成膜装置和使用该成膜装置的基板的制造方法

Country Status (4)

Country Link
US (1) US20110266139A1 (ja)
JP (1) JP5226809B2 (ja)
CN (1) CN102264942B (ja)
WO (1) WO2010073669A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9145602B2 (en) * 2011-11-01 2015-09-29 The Boeing Company Open air plasma deposition system
KR101819555B1 (ko) * 2016-06-15 2018-01-17 주식회사 에이치비테크놀러지 박막형성 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3331707A1 (de) * 1983-09-02 1985-03-21 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern
JPH0570951A (ja) * 1991-09-11 1993-03-23 Hitachi Ltd 連続スパツタ装置
JPH05132770A (ja) * 1991-11-11 1993-05-28 Canon Inc スパツタ装置
JP3354747B2 (ja) * 1995-05-22 2002-12-09 株式会社フジクラ Ｃｖｄ反応装置および酸化物超電導導体の製造方法
JPH11193458A (ja) * 1998-01-05 1999-07-21 Sony Corp スパッタ装置
JP2001053009A (ja) * 1999-08-05 2001-02-23 Canon Inc 機能性堆積膜の連続形成方法及び連続形成装置
JP2002020863A (ja) * 2000-05-01 2002-01-23 Canon Inc 堆積膜の形成方法及び形成装置、及び基板処理方法
EP1182272A1 (fr) * 2000-08-23 2002-02-27 Cold Plasma Applications C.P.A. Procédé et dispositif permettant le dépôt de couches métalliques en continu par plasma froid
JP4551290B2 (ja) * 2005-07-22 2010-09-22 積水化学工業株式会社 撥水化用常圧プラズマ処理装置
US7886688B2 (en) * 2004-09-29 2011-02-15 Sekisui Chemical Co., Ltd. Plasma processing apparatus

Also Published As

Publication number Publication date
WO2010073669A1 (ja) 2010-07-01
JP5226809B2 (ja) 2013-07-03
JPWO2010073669A1 (ja) 2012-06-07
CN102264942A (zh) 2011-11-30
US20110266139A1 (en) 2011-11-03

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