CN102254934A - P-N junction diode structure of MOS (metal-oxide semiconductor) - Google Patents
P-N junction diode structure of MOS (metal-oxide semiconductor) Download PDFInfo
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- CN102254934A CN102254934A CN2011102217067A CN201110221706A CN102254934A CN 102254934 A CN102254934 A CN 102254934A CN 2011102217067 A CN2011102217067 A CN 2011102217067A CN 201110221706 A CN201110221706 A CN 201110221706A CN 102254934 A CN102254934 A CN 102254934A
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Abstract
The invention provides a P-N junction diode structure of an MOS (metal-oxide semiconductor), at least comprising a substrate, a channel structure which is formed above the substrate, a grid electrode structure which is formed in the channel structure and extrudes out of the surface of the channel structure, a side wall structure which extrudes out of the surface of the channel structure and is arranged at one side of the grid electrode structure, a metal layer which is formed on the surface of the channel structure, the surface of the grid electrode structure and the side wall structure, and an ion implantation area of single conductive materials, the ion implantation area is formed on the substrate in a form of multiple regions with different depths and adjacent to the grid electrode structure as well as forms an ohm junction with the metal layer. A diode component has quick response, a positive conduction pressure drop value is low and a back bias voltage leakage current is small.
Description
The present invention is one and divides an application that the applying date of original application is: on April 2nd, 2009; Original applying number is: 200910132565.4; Former invention and created name is: P-N junction diode structure of metal oxide semiconductor and preparation method thereof.
Technical field
The present invention relates to a kind of P-N junction diode structure of metal oxide semiconductor and preparation method thereof, relate in particular to and have than low-leakage current, than low forward conduction voltage drop value (V
F), a kind of P-N junction diode structure of metal oxide semiconductor of higher reverse proof voltage value and low reverse recovery time characteristic.
Background technology
Schottky diode is with the unipolarity element of electronics as charge carrier, and its characteristic is the fast and forward conduction voltage drop value (V of speed
F) low, but reverse biased leakage current then big (relevant with metal work function and Xiao Ji barrier value that doping content of semiconductor caused).And the P-N diode is a kind of double carriers element, and the conduct electricity flow is big.But the positive operation voltage drop value (V of element
F) generally than Schottky diode height, and because of the effect of holoe carrier makes P-N diode reaction speed slower, reverse recovery time is longer.
About the Xiao Ji barrier diode device of ditching type, its representative aforementioned application can be consulted United States Patent (USP) in 1994, and the component structure that the 5th, 365, No. 102 motion title SCHOTTKY BARRIER RECTIFIER WITH MOS TRENCH are disclosed is representative.See also Fig. 1～shown in Figure 6, its manufacture method mainly comprises step: at first, as shown in Figure 1, substrate 11 and long good N-type epitaxial loayer (epitaxial layer) 12 are provided, the pad oxide 13 of growing up thereon, to reduce the stress of subsequent silicon nitride mask layer deposition, the mask silicon nitride layer of then growing up (mask nitride) 15.Then as shown in Figure 2, after forming photoresist layer 17 on the mask silicon nitride layer 15, carry out photoetching process and etch process, to remove part mask silicon nitride layer 15, pad oxide 13 and N-epitaxial loayer 12, the structure 20 of formation irrigation canals and ditches.Afterwards, as shown in Figure 3, growth thermal oxide layer 16 is in the sidewall and the bottom of irrigation canals and ditches.As shown in Figure 4, remove mask silicon layer 15 and pad oxide 13.Then as shown in Figure 5, plate anode metal layer 18, then carry out the photoetching and the etch process of anode metal, metal level 18 is Xiao Jijie with the source electrode of platform 14.At last, carry out the technology of brilliant back-grinding and brilliant rear cathode metal electrode 19, as shown in Figure 6.Arrive this, promptly finish the technology of wafer part.
Ditching type Schottky diode (Trench MOS Barrier Schottky Rectifier by above-mentioned process making; TMBR), has extremely low forward conduction voltage drop value (V
F), but reverse leakage current then can improve relatively.If lower leakage current will be arranged, one of them method is to select the higher metal of work function.Can draw high the forward conduction voltage drop value (V of Schottky diode so, again
F).Therefore, for Schottky diode, the two is real to be fish and bear's paw, is difficult to get both.In addition, another kind of method is ended the length of passage for deepening the degree of depth of irrigation canals and ditches in the substrate to increase counter clamp, suppresses leakage current.But this mode is unfavorable for the making of high voltage devices, increases reverse voltage endurance capability because of it must use thicker N type epitaxial loayer.Therefore, when developing, seemingly there is certain bottleneck to exist toward high-tension Schottky diode element.The Schottky diode of high pressure is difficult to be made, and when when searching the Schottky diode element of present market volume production, the product of the high backward voltage of being seen is 600 volts.And its actual be that 2 300 volts ditching type Schottky diode is in series, and the forward conduction voltage drop value (V of element
F) also higher.How design element has higher reverse proof voltage (as more than 600 volts) to reach, lower forward conduction voltage drop value (V
F), lower reverse leakage current and lower reverse recovery time (Reverse Recovery Time; TRR), promptly refer to have reaction speed faster, real is a major challenge.At this, revert to plane formula P-N knot circuit elements design, reaching high withstand voltage characteristic, and the adjustment of collocation metal-oxide semiconductor (MOS) N type pass element and P-N knot position, reduce reverse recovery time, increase reaction speed and reduce forward conduction voltage drop value (V
F), make element that the advantage that has near Schottky diode is arranged whereby, and lower leakage current is arranged.
Summary of the invention
P-N junction diode structure of metal oxide semiconductor provided by the present invention and preparation method thereof, it is metal-oxide semiconductor (MOS) N type channel design and the common structure of P-N junction diode on the structural design of element.By this kind structural design,, has fast and forward conduction voltage drop value (V when forward bias is operated near the reaction speed of Schottky diode when element is that metal-oxide semiconductor (MOS) N type passage is in parallel with P-N face diode
F) low characteristic.And when reverse operation, P-N junction diode depletion region makes element have low-down leakage current to the behavior of the oppressive and N type pathway closure of electric leakage.Therefore, make element that advantage near Schottky diode be arranged.Be that to have reaction speed fast, forward conduction voltage drop value (V
F) value low, have the reverse biased leakage current little then again, etc. the diode element of characteristic.
For finishing said structure, manufacture method of the present invention comprises the following step at least: a substrate is provided; On this substrate, form one first mask layer; This substrate is carried out one first photoengraving carving technology, and then remove this first mask layer of part and on this substrate, form an irrigation canals and ditches structure; In this first irrigation canals and ditches structure, carry out one first ion implantation technology, and then on this substrate, form one first degree of depth injection zone; This substrate is carried out one second photoengraving carving technology, and then remove this first mask layer of part to form a side wall construction; On the bottom of this irrigation canals and ditches structure and this side wall construction, form one second mask layer; This substrate is carried out one the 3rd photoengraving carving technology, and then in this irrigation canals and ditches structure, form a grid structure; In this irrigation canals and ditches structure, carry out one second ion implantation technology, and then on this substrate, form one second degree of depth injection zone adjacent to this first degree of depth injection zone; After removing photoresist, in this irrigation canals and ditches structure, carry out one the 3rd ion implantation technology, and then on this substrate, form one the 3rd degree of depth injection zone adjacent to this second degree of depth injection zone; Carry out an etch process, and then remove this second mask layer of part; On the surface of the bottom of this irrigation canals and ditches structure, this grid structure and this side wall construction, form a metal level; And this substrate carried out one the 4th photoengraving carving technology, and then get rid of this metal level of part.
P-N junction diode structure of metal oxide semiconductor of the present invention comprises at least: a substrate; One irrigation canals and ditches structure is formed at this substrate top; One grid structure is formed in this irrigation canals and ditches structure and protrudes in the surface of this irrigation canals and ditches structure; One side wall construction protrudes in the surface of this irrigation canals and ditches structure and is positioned at the side of this grid structure; One metal level is formed on the surface and this side wall construction of surface, this grid structure of this irrigation canals and ditches structure; And an ion implanted region territory, be formed in this substrate with the different zone of a plurality of depths, and this ion implanted region territory is adjacent to this grid structure, and this ion implanted region territory and this metal level form one ohm of knot.
It is fast that diode element of the present invention has reaction speed, and the forward conduction voltage drop value is low, and characteristics such as the reverse biased leakage current is little are arranged again then.
Description of drawings
The present invention obtains a more deep understanding by following accompanying drawing and explanation:
Fig. 1～Fig. 6, it is a United States Patent (USP) the 5th, 365, the Xiao Ji barrier diode device manufacture method schematic diagram of the ditching type that is disclosed for No. 102.
Fig. 7, it improves the shortcoming of known technology means to develop the preferred embodiment schematic diagram that a P-N junction diode structure of metal oxide semiconductor for the present invention.
Fig. 8～Figure 24, it improves the shortcoming of known technology means to develop the P-N junction diode structure of metal oxide semiconductor that and make schematic flow sheet for the present invention.
Wherein, description of reference numerals is as follows:
11 substrate 12N-type epitaxial loayers
13 pad oxides, 14 platforms
15 mask silicon nitride layers, 16 thermal oxide layers
17 photoresist layers, 18 anode metal layer
19 cathodic metal electrodes, 20 irrigation canals and ditches structures
2 Schottky diodes, 21 substrates
22 irrigation canals and ditches structures, 23 grid structures
24 side wall constructions, 25 metal levels
26 ion implanted region territories
211 high-dopant concentration N type silicon substrates
212 low doping concentration N type epitaxial loayers, 2120 surfaces
251 the first metal layers, 252 second metal levels
261 first degree of depth injection zones, 262 second degree of depth injection zones
263 the 3rd degree of depth injection zones, 2620 surfaces
201 first mask layers, 202 second mask layers
2011,2012,2013 photoresist layers
2001,2002,2003 photoresist figures, 202 first oxide layers
2022 polymeric layers, 2,023 second oxide layers
Embodiment
See also Fig. 7, it improves the shortcoming of known technology means to develop the preferred embodiment schematic diagram that a P-N junction diode structure of metal oxide semiconductor for the present invention.We can find out clearly that this metal-oxide semiconductor (MOS) P-N junction diode 2 structures consist predominantly of a substrate 21 from figure, irrigation canals and ditches structure 22, one grid structure 23, one side wall construction 24, one metal level 25 and an ion implanted region territory 26, wherein this substrate 21 is by 212 formations of a high-dopant concentration N type silicon substrate (N+ silicon substrate) 211 and one low doping concentration N type epitaxial loayer (N-epitaxial loayer), this irrigation canals and ditches structure 22 is formed at the top of this substrate 21, this grid structure 23 is formed in this irrigation canals and ditches structure 22 and protrudes in the surface 2120 of this low doping concentration N type epitaxial loayer 212, this side wall construction 24 protrudes in the surface of this substrate 21 and is positioned at the side of this grid structure 23, this metal level 25 is formed at the surface of this irrigation canals and ditches structure 22, on the surface of this grid structure 23 and this side wall construction 24, with this ion implanted region territory 26, this metal level 25 then is ohm knot with surface 2620 joints in this ion implanted region territory 262, and it is to be formed in this substrate 21 with the different zone of a plurality of depths, and this ion implanted region territory 26 is adjacent to this grid structure 23.
Accept above-mentioned technical descriptioon, this side wall construction 24 that P-N junction diode structure of metal oxide semiconductor 2 of the present invention is comprised is finished by the monoxide material, this metal level 25 comprises a first metal layer 251 and one second metal level 252, wherein this first metal layer 251 is formed at the surface of this irrigation canals and ditches structure 22, on the surface of this grid structure 23 and this side wall construction 24, it is finished with a titanium (Ti) or titanium nitride (TiN), and this ion implanted region territory 26 is formed at a kind of P type conduction type material in this low doping concentration N type epitaxial loayer 212, and this ion implanted region territory 26 is made of one first degree of depth injection zone 261 and one second degree of depth injection zone 262, and by this first degree of depth injection zone 261, this second degree of depth injection zone 262 and one the 3rd degree of depth injection zone 263 constitute.
See also Fig. 8～Figure 24, it improves the shortcoming of known technology means to develop the P-N junction diode structure of metal oxide semiconductor that and make schematic flow sheet for the present invention.We can clearly find out from figure, at first, provide a substrate 21 (as shown in Figure 8), and this substrate 21 is constituted by a high-dopant concentration N type silicon substrate 211 (N+ silicon substrate) and a low doping concentration N type epitaxial loayer 212 (N-epitaxial loayer); As shown in Figure 9, on this substrate 21, form one first mask layer 201 (oxide layer) by an oxidation technology; On this first mask layer 201, form a photoresist layer 2011 (as shown in figure 10); On this photoresist layer 2011, define a photoresist figure 2001 (as shown in figure 11); Carry out etching and in this substrate 21, form an irrigation canals and ditches structure 22 (as shown in figure 12) according to 2001 pairs of these first mask layers 201 of this photoresist figure removing remaining these photoresist layer 2011 backs; In this irrigation canals and ditches structure 22, carry out one first ion implantation technology then, and then in this low doping concentration N type epitaxial loayer 212, form one first degree of depth injection zone 261 (as shown in figure 13); On this first mask layer 201, form a photoresist layer 2012 (as shown in figure 14); On this photoresist layer 2012, define a photoresist figure 2002 (as shown in figure 15); Carry out etching and remove remaining this photoresist layer 2012 afterwards on this substrate 21, forming a side wall construction 24 (as shown in figure 16) according to 2002 pairs of these substrates 21 of this photoresist figure; On the bottom of this irrigation canals and ditches structure 22 and this side wall construction 24, form one second mask layer 202 (as shown in figure 17); On this second mask layer 202, form a photoresist layer 2013 (as shown in figure 18); On this photoresist layer 2013, define a photoresist figure 2003 (as shown in figure 19); Carry out in this irrigation canals and ditches structure 22, forming after the etching grid structure 23 (as shown in figure 20) according to 2003 pairs of these substrates 21 of this photoresist figure; In this irrigation canals and ditches structure 22, carry out one second ion implantation technology, and then in this low doping concentration N type epitaxial loayer 212, form one second degree of depth injection zone 262 (as shown in figure 21) adjacent to this first degree of depth injection zone 261; In this irrigation canals and ditches structure 22, carry out one the 3rd ion implantation technology again after removing this photoresist layer 2013 of residue, and then in this this low doping concentration N type epitaxial loayer 212, form one the 3rd degree of depth injection zone 263 (as shown in figure 22) adjacent to this second degree of depth injection zone 262; This substrate 21 is carried out a dry etch process, and then this second mask layer 202 of part is removed (as shown in figure 23); On the surface of the bottom of this irrigation canals and ditches structure 22, this grid structure 23 and this side wall construction 24, form a metal level 25 (as shown in figure 24); This metal level 25 is carried out a photoengraving carving technology, removing this metal level 25 of part, and then finish P-N junction diode structure of metal oxide semiconductor 2 as shown in Figure 7.
Accept above-mentioned technical descriptioon, at Figure 13, Figure 21, formed this first degree of depth injection zone 261 in the step shown in Figure 22, this second degree of depth injection zone 262 is a P type conduction type semiconductor material with the 3rd injection zone 263, in addition, in this irrigation canals and ditches structure 22, carry out this first ion implantation technology the boron ion is injected into this low doping concentration N type epitaxial loayer 212, form this first degree of depth injection zone 261 after cooperating a thermal anneal process again, and this second ion implantation technology is in the mode that a deep layer ion injects the boron ion to be injected, it is that mode so that a shallow-layer ion injects is injected the boron ion that the 3rd ion injects, and forms this second degree of depth injection zone 262 and the 3rd degree of depth injection zone 263 after cooperating a rapid thermal anneal process at last again.In step shown in Figure 17, the generation type of this second mask layer 202 is: form one first oxide layer 2021 (being grid oxic horizon) on the bottom of this irrigation canals and ditches structure 22, this side wall construction 24; With a chemical vapour deposition technique (chemical vapor deposition, be called for short CVD) formation one polymeric layer 2022 on this first oxide layer 2021, carry out a polymer oxidation technology then, and then make part this polymeric layer oxidation and form one second oxide layer 2023.And in step shown in Figure 20, this etch process is for to carry out a Wet-type etching to this second oxide layer 2023, and this polymeric layer 2022 is carried out a dry-etching, and then finishes the configuration of this grid structure 23.In step shown in Figure 22,, and then expose this first degree of depth injection zone 261 and this second degree of depth injection zone 262 for this first oxide layer 2021 of part and this second oxide layer 2023 that this second mask layer 202 is comprised are removed.In step shown in Figure 24, this metal level 25 includes this first metal layer 251 and this second metal level 252, wherein this first metal layer 251 is formed at the bottom surface of this irrigation canals and ditches structure 22, carry out a quick nitriding process (Rapid Thermal Nitridation after on this side wall construction 24, be called for short RTN), and then make this first metal layer 251 to follow completely in the bottom surface of this irrigation canals and ditches structure 22, on this side wall construction 24, in addition, after forming this metal level 25 on the bottom of this irrigation canals and ditches structure 22 and this side wall construction 24, carry out a heat and merge technology (Sintering), so make this metal level 25 more driving fit in the bottom of this irrigation canals and ditches structure 22, on the face side wall construction 24 of this grid structure 23.
Comprehensive above technical descriptioon, we can clearly recognize, compared to known Schottky diode structure, the P-N junction diode structure of metal oxide semiconductor that utilizes manufacture method of the present invention to finish has low reverse voltage leakage current, low forward conduction voltage drop value (V
F), high oppositely proof voltage value, with low reverse recovery time characteristic, thus, P-N junction diode structure of metal oxide semiconductor of the present invention has effectively solved the shortcoming that is produced in the prior art, and then finishes development topmost purpose of the present invention.
And the present invention must can make various modifications by those of ordinary skills, yet does not all break away from the scope as appended claim institute desire protection.
Claims (7)
1. P-N junction diode structure of metal oxide semiconductor, it comprises at least:
One substrate;
One irrigation canals and ditches structure is formed at this substrate top;
One grid structure is formed in this irrigation canals and ditches structure and protrudes in the surface of this irrigation canals and ditches structure;
One side wall construction protrudes in the surface of this irrigation canals and ditches structure and is positioned at the side of this grid structure;
One metal level is formed on the surface and this side wall construction of surface, this grid structure of this irrigation canals and ditches structure; And
The ion implanted region territory of one single conduction type material, be to be formed in this substrate with the different zone of a plurality of depths, and the ion implanted region territory of this single conduction type material is adjacent to this grid structure, and the ion implanted region territory of this single conduction type material and one ohm of knot of this metal level formation.
2. P-N junction diode structure of metal oxide semiconductor as claimed in claim 1, wherein this substrate is made of a high-dopant concentration N type silicon substrate and a low doping concentration N type epitaxial loayer.
3. P-N junction diode structure of metal oxide semiconductor as claimed in claim 2, wherein the ion implanted region territory of this single conduction type material is that the ion implanted region territory of a P type conduction type material is formed in this low doping concentration N type epitaxial loayer.
4. P-N junction diode structure of metal oxide semiconductor as claimed in claim 1, wherein this grid structure comprises a grid oxic horizon and a polymeric layer.
5. P-N junction diode structure of metal oxide semiconductor as claimed in claim 1, wherein this side wall construction is finished by the monoxide material.
6. P-N junction diode structure of metal oxide semiconductor as claimed in claim 1, wherein this metal level comprises on the surface and this side wall construction of bottom that a first metal layer is formed at this irrigation canals and ditches structure, this grid structure; And one second metal level, be formed on this first metal layer.
7. P-N junction diode structure of metal oxide semiconductor as claimed in claim 1, wherein, this ion implanted region territory is made of one first degree of depth injection zone and one second degree of depth injection zone; Perhaps, this ion implanted region territory is made of one first degree of depth injection zone, one second degree of depth injection zone and one the 3rd degree of depth injection zone.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110221706.7A CN102254934B (en) | 2009-04-02 | 2009-04-02 | P-N junction diode structure of MOS (metal-oxide semiconductor) |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110221706.7A CN102254934B (en) | 2009-04-02 | 2009-04-02 | P-N junction diode structure of MOS (metal-oxide semiconductor) |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009101325654A Division CN101510528B (en) | 2009-04-02 | 2009-04-02 | P-N junction diode structure of metal oxide semiconductor and method for producing the same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872143A (en) * | 2012-12-17 | 2014-06-18 | 英属维京群岛商节能元件股份有限公司 | Metal oxide semiconductor diode element with terminal structure and manufacturing method for metal oxide semiconductor diode element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4823172A (en) * | 1986-06-17 | 1989-04-18 | Nissan Motor Company, Ltd. | Vertical MOSFET having Schottky diode for latch-up prevention |
| US6078090A (en) * | 1997-04-02 | 2000-06-20 | Siliconix Incorporated | Trench-gated Schottky diode with integral clamping diode |
-
2009
- 2009-04-02 CN CN201110221706.7A patent/CN102254934B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4823172A (en) * | 1986-06-17 | 1989-04-18 | Nissan Motor Company, Ltd. | Vertical MOSFET having Schottky diode for latch-up prevention |
| US6078090A (en) * | 1997-04-02 | 2000-06-20 | Siliconix Incorporated | Trench-gated Schottky diode with integral clamping diode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872143A (en) * | 2012-12-17 | 2014-06-18 | 英属维京群岛商节能元件股份有限公司 | Metal oxide semiconductor diode element with terminal structure and manufacturing method for metal oxide semiconductor diode element |
| CN103872143B (en) * | 2012-12-17 | 2016-09-21 | 节能元件控股有限公司 | There is golden oxygen half diode element and the preparation method thereof of terminal structure |
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| CN102254934B (en) | 2015-05-06 |
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