CN101533804B - A metal oxide semiconductor P-N junction schootky diode structure and the production method thereof - Google Patents
A metal oxide semiconductor P-N junction schootky diode structure and the production method thereof Download PDFInfo
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Abstract
The invention provides a metal oxide semiconductor P-N junction schootky diode structure and the production method thereof, and the method comprises the following steps: providing a base plate; forming a first mask layer on the base plate; carrying out the first photoetching process to from a ditch structure; carrying out the first ion injection in the first ditch structure; carrying out the second photoetching process to form a side wall structure; forming a second mask layer on the bottom of the ditch structure and the side wall structure; carrying out the third photoetching process on the base plate to form a gate structure in the ditch structure; carrying out the second ion injection process in the ditch structure; after eliminating photoresist, carrying out the third ion injection process in the ditch structure; carrying out the fourth photoetching process; forming a metal layer on the gate surface of the obtained structure; carrying out the fifth photoetching process, and eliminating part of the metal layer. The invention has the advantages of both P-N junction and schootky diode.
Description
Technical field
The present invention is a kind of metal oxide semiconductor P-N junction schootky diode structure and preparation method thereof, refers to especially have than low-leakage current, than low forward conduction voltage drop value (V
F), higher reverse proof voltage value is with a kind of metal oxide semiconductor P-N junction schootky diode structure of low reverse recovery time characteristic.
Background technology
Schottky diode is with the unipolarity element of electronics as charge carrier, and its characteristic is the fast and forward conduction voltage drop value (V of speed
F) low, but reverse biased leakage current then big (relevant with metal work function and Xiao Ji barrier value that doping content of semiconductor caused).And the P-N diode is a kind of double carriers element, and the conduct electricity flow is big.But the positive operation voltage drop value (V of element
F) generally than Schottky diode height, and because of the effect of holoe carrier makes P-N diode reaction speed slower, reverse recovery time is longer.
About the Xiao Ji barrier diode device of ditching type, its representative aforementioned application can be consulted United States Patent (USP) in 1994, and the component structure that the 5th, 365, No. 102 motion title SCHOTTKY BARRIER RECTIFIER WITH MOS TRENCH are disclosed is representative.See also shown in Fig. 1 (a)～Fig. 1 (f), its manufacture method mainly comprises step: at first, shown in Fig. 1 (a), substrate 11 and long good N-type epitaxial loayer (epitaxial layer) 12 are provided, the pad oxide 13 of growing up thereon, to reduce the stress of subsequent silicon nitride mask layer deposition, the mask silicon nitride layer of then growing up (mask nitride) 15.Then shown in Fig. 1 (b), after forming photoresist layer 17 on the mask silicon nitride layer 15, carry out photoetching process and etch process, to remove part mask silicon nitride layer 15, pad oxide 13 and N-epitaxial loayer 12, the structure 22 of formation irrigation canals and ditches.Afterwards, shown in Fig. 1 (c), growth thermal oxide layer 16 is in the sidewall and the bottom of irrigation canals and ditches.Shown in Fig. 1 (d), remove mask silicon layer 15 and pad oxide 13.Then shown in Fig. 1 (e), plate anode metal layer 18, then carry out the photoetching and the etch process of anode metal, metal level 18 is Xiao Jijie with the source electrode of platform 14.At last, carry out the technology of brilliant back-grinding and brilliant rear cathode metal electrode 20, shown in Fig. 1 (f).Arrive this, promptly finish the technology of wafer part.
Ditching type Schottky diode (Trench MOS Barrier Schottky Rectifier by above-mentioned process making; TMBR), has extremely low forward conduction voltage drop value (V
F), but reverse leakage current then can improve relatively.If lower leakage current will be arranged, one of them method is to select the higher metal of work function.Can draw high the forward conduction voltage drop value (V of Schottky diode so, again
F).Therefore, for Schottky diode, the two is real to be fish and bear's paw, is difficult to get both.In addition, another kind of method is ended the length of passage for deepening the degree of depth of irrigation canals and ditches in the substrate to increase counter clamp, suppresses leakage current.But this mode is unfavorable for the making of high voltage devices, increases reverse voltage endurance capability because of it must use thicker N type epitaxial loayer.Therefore, when developing toward high-tension Schottky diode element, revert to the plane formula circuit elements design, select in technology and material, spent cost is comparatively cheap, also more easily reaches high withstand voltage design.Make because the Schottky diode of high pressure is difficult, when searching the Schottky diode element of present market volume production, the product of the high backward voltage of being seen is 600 volts.And its actual be that 2 300 volts ditching type Schottky diode is in series, and the forward conduction voltage drop value (V of element
F) also higher.How design element has higher reverse proof voltage (as more than 600 volts) to reach, lower forward conduction voltage drop value (V
F), lower reverse leakage current and lower reverse recovery time (Reverse Recovery Time; t
RR), promptly refer to have reaction speed faster, real is a major challenge.
Summary of the invention
Metal oxide semiconductor P-N junction schootky diode structure provided by the present invention and preparation method thereof, it has Schottky diode simultaneously on the structural design of element, the characteristic of metal-oxide semiconductor (MOS) N type channel design and P-N junction diode.By this kind structural design, when element is a Schottky diode when forward bias is operated, metal-oxide semiconductor (MOS) N type passage is in parallel with P-N face diode, has the fast and forward conduction voltage drop value (V as the reaction speed of Schottky diode
F) low characteristic.And when reverse operation, end behavior with N type pathway closure by the folder of both sides P-N junction diode depletion region, make element have low-down leakage current.Therefore, merge the advantage of P-N junction diode and Schottky diode simultaneously.Be that to have reaction speed fast, forward conduction voltage drop value (V
F) value is low, and the reverse biased leakage current is little, etc. the diode element of characteristic.
For finishing said structure, manufacture method of the present invention comprises the following step at least: a substrate is provided; On this substrate, form one first mask layer; This substrate is carried out one first photoengraving carving technology, and then remove this first mask layer of part and on this substrate, form an irrigation canals and ditches structure; In this irrigation canals and ditches structure, carry out one first ion implantation technology, and then on this substrate, form one first degree of depth injection zone; This substrate is carried out one second photoengraving carving technology, and then remove this first mask layer of part to form a side wall construction; On the bottom of this irrigation canals and ditches structure and this side wall construction, form one second mask layer; This substrate is carried out one the 3rd photoengraving carving technology, and then in this irrigation canals and ditches structure, form a grid structure; In this irrigation canals and ditches structure, carry out one second ion implantation technology, and then on this substrate, form one second degree of depth injection zone adjacent to this first degree of depth injection zone; After removing photoresist, in this irrigation canals and ditches structure, carry out one the 3rd ion implantation technology, and then on this substrate, form one the 3rd degree of depth injection zone adjacent to this second degree of depth injection zone; This substrate is carried out one the 4th photoengraving carving technology, and then remove the bottom of this grid structure of part and this irrigation canals and ditches structure of exposed portions serve; On the surface of the bottom of this irrigation canals and ditches structure, this grid structure and this side wall construction, form a metal level; And this substrate carried out one the 5th photoengraving carving technology, and then get rid of this metal level of part.
Metal oxide semiconductor P-N junction schootky diode structure of the present invention, it comprises at least: a substrate has a surface; One irrigation canals and ditches structure is formed at this substrate top; One grid structure is formed in this irrigation canals and ditches structure and protrudes in the surface of this substrate; One side wall construction is formed at the surface of this substrate and is positioned at the side of this grid structure; One ion implanted region territory is to be formed in this substrate with the different zone of a plurality of depths, make the surface of this substrate form this ion implanted region territory of one first type zone and one second type, and this ion implanted region territory is adjacent to this grid structure; And a metal level, being formed on surface, this grid structure and this side wall construction of this substrate, this metal level also forms Xiao Ji knot with first type zone on the surface of this substrate, and the one ohm of knot in this ion implanted region territory of second type and the formation of this metal level.
The advantage of P-N junction diode and Schottky diode is merged in the present invention simultaneously.Be that to have reaction speed fast, the forward conduction voltage drop value is low, and the reverse biased leakage current is little, etc. the diode element of characteristic.
Description of drawings
The present invention obtains a more deep understanding by following accompanying drawing and explanation:
Fig. 1 (a)～Fig. 1 (f), it is a United States Patent (USP) the 5th, 365, the Xiao Ji barrier diode device manufacture method schematic diagram of the ditching type that is disclosed for No. 102.
Fig. 2, it improves the shortcoming of known technology means to develop the preferred embodiment schematic diagram that a metal oxide semiconductor P-N junction schootky diode structure for the present invention.
Fig. 3 (a)～Fig. 3 (s), it improves the shortcoming of known technology means to develop the metal oxide semiconductor P-N junction schootky diode structure fabrication schematic flow sheet that for the present invention.
Wherein, description of reference numerals is as follows:
11 substrate 12N-type epitaxial loayers
13 pad oxides, 14 platforms
15 mask silicon nitride layers, 16 thermal oxide layers
17 photoresist layers, 18 anode metal layer
19 cathodic metal electrodes, 20 irrigation canals and ditches structures
2 Schottky diodes, 21 substrates
22 irrigation canals and ditches structures, 23 grid structures
24 side wall constructions, 25 metal levels
26 ion implanted region territories
211 high-dopant concentration N type silicon substrates
212 low doping concentration N type epitaxial loayers
2120 surfaces
251 the first metal layers, 252 second metal levels
261 first degree of depth injection zones, 262 second degree of depth injection zones
263 the 3rd degree of depth injection zones, 2620 surfaces
201 first mask layers, 202 second mask layers
2011,2012,2013 photoresist layers
2001,2002,2003 photoresist figures
2,021 first oxide layers, 2022 polymeric layers
2,023 second oxide layers
Embodiment
See also Fig. 2, it improves the shortcoming of known technology means to develop the preferred embodiment schematic diagram that a metal oxide semiconductor P-N junction schootky diode structure for the present invention.We can find out clearly that these metal oxide semiconductor P-N junction schootky diode 2 structures consist predominantly of a substrate 21 from figure, irrigation canals and ditches structure 22, one grid structure 23, one side wall construction 24, one metal level 25 and an ion implanted region territory 26, wherein this substrate 21 is by 212 formations of a high-dopant concentration N type silicon substrate (N+ silicon substrate) 211 and one low doping concentration N type epitaxial loayer (N-epitaxial loayer), this irrigation canals and ditches structure 22 is formed at the top of this substrate 21, this grid structure 23 is formed in this irrigation canals and ditches structure 22 and protrudes in the surface 2120 of this low doping concentration N type epitaxial loayer 212, this side wall construction 24 is formed at the surface of this substrate 21 and is positioned at the side of this grid structure 23, this metal level 25 is formed at the surface 2120 of this low doping concentration N type epitaxial loayer 212, on this grid structure 23 and this side wall construction 24, and when this metal level 25 engages with the surface 2120 of this low doping concentration N type epitaxial loayer 212, just can become Xiao Ji knot, this metal level 25 then is ohm knot with surface 2620 joints in this ion implanted region territory 262, and it is to be formed in this substrate 21 with the different zone of a plurality of depths, and this ion implanted region territory 26 is adjacent to this grid structure 23.
Hold above-mentioned technical descriptioon, this side wall construction 24 that metal oxide semiconductor P-N junction schootky diode structure 2 of the present invention is comprised is finished by the monoxide material, this metal level 25 comprises a first metal layer 251 and one second metal level 252, wherein this first metal layer 251 is formed at the surface 2120 of this low doping concentration N type epitaxial loayer 212, on this grid structure 23 and this side wall construction 24, this the first metal layer 251 is finished with a titanium (Ti) or titanium nitride (TiN), this second metal level 252 is formed on this first genus layer 251, this second metal level we can use aluminum metal or other metals to finish, and this ion implanted region territory 26 is formed at a kind of P type conduction type material in this low doping concentration N type epitaxial loayer 212 that this substrate 21 comprised, and this ion implanted region territory 26 is made of one first degree of depth injection zone 261 and one second degree of depth injection zone 262, and by this first degree of depth injection zone 261, this second degree of depth injection zone 262 and one the 3rd degree of depth injection zone 263 constitute.
See also Fig. 3 (a)～Fig. 3 (s), it improves the shortcoming of known technology means to develop the metal oxide semiconductor P-N junction schootky diode structure fabrication schematic flow sheet that for the present invention.We can clearly find out from figure, at first, provide a substrate 21 (shown in Fig. 3 (a)), and this substrate 21 is constituted by a high-dopant concentration N type silicon substrate 211 (N+ silicon substrate) and a low doping concentration N type epitaxial loayer 212 (N-epitaxial loayer); Shown in Fig. 3 (b), on this substrate 21, form one first mask layer 201 (oxide layer) by an oxidation technology; On this first mask layer 201, form a photoresist layer 2011 (shown in Fig. 3 (c)); On this photoresist layer 2011, define a photoresist figure 2001 (shown in Fig. 3 (d)); According to 2001 pairs of these first mask layers 201 of this photoresist figure carry out etching and removing remaining these photoresist layer 2011 backs in forming an irrigation canals and ditches structure 22 (shown in Fig. 3 (e)) in this substrate 21; In this irrigation canals and ditches structure 22, carry out one first ion implantation technology then, and then in this low doping concentration N type epitaxial loayer 212, form one first degree of depth injection zone 261 (shown in Fig. 3 (f)); On this first mask layer 201, form a photoresist layer 2012 (shown in Fig. 3 (g)); On this photoresist layer 2012, define a photoresist figure 2002 (shown in Fig. 3 (h)); Carry out etching and remove remaining this photoresist layer 2012 afterwards on this substrate 21, forming a side wall construction 24 (shown in Fig. 3 (i)) according to 2002 pairs of these substrates 21 of this photoresist figure; On the surface 2120 of this low doping concentration N type epitaxial loayer 212 and this side wall construction 24, form one second mask layer 202 (shown in Fig. 3 (j)); On this second mask layer 202, form a photoresist layer 2013 (shown in Fig. 3 (k)); On this photoresist layer 2013, define a photoresist figure 2003 (shown in Fig. 3 (l)); Carry out after the etching and in forming a grid structure 23 (shown in Fig. 3 (m)) in this irrigation canals and ditches structure 22 according to 2003 pairs of these substrates 21 of this photoresist figure; In this irrigation canals and ditches structure 22, carry out one second ion implantation technology, and then in this low doping concentration N type epitaxial loayer 212, form one second degree of depth injection zone 262 (shown in Fig. 3 (n)) adjacent to this first degree of depth injection zone 261; In this irrigation canals and ditches structure 22, carry out one the 3rd ion implantation technology again after removing this photoresist layer 2013 of residue, and then in this low doping concentration N type epitaxial loayer 212, form one the 3rd degree of depth injection zone 263 (shown in Fig. 3 (o)) adjacent to this second degree of depth injection zone 262; On surface 2120, this side wall construction 24 and this grid structure 23 of this low doping concentration N type epitaxial loayer 212, form a photoresist layer 2014 (shown in Fig. 3 (p)); On this photoresist layer 2014, define a photoresist figure 2004 (shown in Fig. 3 (q)); After carrying out etching and remove this photoresist layer 2014 of residue according to 2004 pairs of these grid structures 23 of this photoresist figure, and then go to remove the surface 2120 (shown in Fig. 3 (r)) of this grid structure 23 of part and exposed portions serve low doping concentration N type epitaxial loayer 212; On surface 2120, this grid structure 23 and this side wall construction 24 of this low doping concentration N type epitaxial loayer 212, form a metal level 25 (shown in Fig. 3 (s)) at last; This metal level 25 is carried out a photoengraving carving technology, removing this metal level 25 of part, and then finish metal oxide semiconductor P-N junction schootky diode structure 2 as shown in Figure 2.
Accept above-mentioned technical descriptioon, at Fig. 3 (f), Fig. 3 (n), formed this first degree of depth injection zone 261 in the step shown in Fig. 3 (o), this second degree of depth injection zone 262 is a P type conduction type semiconductor material with the 3rd injection zone 263, in addition, in this irrigation canals and ditches structure 22, carry out this first ion implantation technology the boron ion is injected into this low doping concentration N type epitaxial loayer 212, form this first degree of depth injection zone 261 after cooperating a thermal anneal process again, and this second ion implantation technology is in the mode that a deep layer ion injects the boron ion to be injected, it is that mode so that a shallow-layer ion injects is injected the boron ion that the 3rd ion injects, and forms this second degree of depth injection zone 262 and the 3rd degree of depth injection zone 263 after cooperating a rapid thermal anneal process at last again.In the step shown in Fig. 3 (j), the generation type of this second mask layer 202 is: form one first oxide layer 2021 (being grid oxic horizon) on the surface 2120 of this low doping concentration N type epitaxial loayer 212; With a chemical vapour deposition technique (chemical vapor deposition, be called for short CVD) formation one polymeric layer 2022 on this first oxide layer 2021, carry out a polymer oxidation technology then, and then make part this polymeric layer oxidation and form one second oxide layer 2023.And in the step shown in Fig. 3 (m), this etch process is for to carry out a Wet-type etching to this second oxide layer 2023, and this polymeric layer 2022 is carried out a dry-etching, and then finishes the configuration of this grid structure 23.In the step shown in Fig. 3 (r), being etched to of carrying out of this grid structure 23 carried out Wet-type etching to this second oxide layer 2023, and then with this second oxide layer removal, again this polymeric layer 2022 is carried out dry-etching, and then this polymeric layer 2022 of removal part, at last this first oxide layer 2021 is carried out Wet-type etching, and then removing this first oxide layer 2021 of part.In the step shown in Fig. 3 (s), this metal level 25 includes this first metal layer 251 and this second metal level 252, wherein this first metal layer 251 is formed at the surface 2120 of this low doping concentration N type epitaxial loayer 212, carry out a quick nitriding process (Rapid Thermal Nitridation after on this side wall construction 24, be called for short RTN), and then make this first metal layer 251 can follow completely in the surface 2120 of this low doping concentration N type epitaxial loayer 212, on this side wall construction 24, in addition, after forming this metal level 25 on the bottom of this irrigation canals and ditches structure 22 and this side wall construction 24, carry out a heat and merge technology (Sintering), so make this metal level 25 more driving fit in the surface 2120 of this low doping concentration N type epitaxial loayer 212, on the face side wall construction 24 of this grid structure 23.
Comprehensive above technical descriptioon, we can clearly recognize, compared to known Schottky diode structure, the metal oxide semiconductor P-N junction schootky diode structure of utilizing manufacture method of the present invention to finish has low reverse voltage leakage current, low forward conduction voltage drop value (V
F), high oppositely proof voltage value is with low reverse recovery time characteristic, thus, metal oxide semiconductor P-N junction schootky diode structure of the present invention has effectively solved the shortcoming that is produced in the prior art, and then finishes development topmost purpose of the present invention.
Claims (10)
1. metal oxide semiconductor P-N junction schootky diode manufacture method, this method comprises the following step at least:
One substrate is provided;
On this substrate, form one first mask layer;
This substrate is carried out one first photoengraving carving technology, and then remove this first mask layer of part and on this substrate, form an irrigation canals and ditches structure;
In this irrigation canals and ditches structure, carry out one first ion implantation technology, and then in this substrate, form one first degree of depth injection zone;
This substrate is carried out one second photoengraving carving technology, and then remove this first mask layer of part to form a side wall construction;
On the surface of this substrate and this side wall construction, form one second mask layer;
This substrate is carried out one the 3rd photoengraving carving technology, and then in this irrigation canals and ditches structure, form a grid structure;
In this irrigation canals and ditches structure, carry out one second ion implantation technology, and then in this substrate, form one second degree of depth injection zone adjacent to this first degree of depth injection zone;
After photoresist is removed, in this irrigation canals and ditches structure, carry out one the 3rd ion implantation technology, and then in this substrate, form one the 3rd degree of depth injection zone adjacent to this second degree of depth injection zone;
This substrate is carried out one the 4th photoengraving carving technology, and then remove the surface of this grid structure of part and this substrate of exposed portions serve;
On surface, this grid structure and this side wall construction of this substrate, form a metal level; And
This substrate is carried out one the 5th photoengraving carving technology, and then get rid of this metal level of part.
2. metal oxide semiconductor P-N junction schootky diode manufacture method as claimed in claim 1, wherein this substrate is constituted by a high-dopant concentration N type silicon substrate and a low doping concentration N type epitaxial loayer, and this first ion implantation technology of being carried out in this irrigation canals and ditches structure can form this first degree of depth injection zone of P type conduction type in this low doping concentration N type epitaxial loayer that this substrate comprised, and this first ion implantation technology is utilized the boron ion to inject and is cooperated and carries out forming this first degree of depth injection zone behind the thermal anneal process, this second ion injection is in the mode that a deep layer ion injects the boron ion to be injected, and the injection of the 3rd ion is in the mode that a shallow-layer ion injects the boron ion to be injected, and forms this second degree of depth injection zone and the 3rd degree of depth injection zone after cooperating a rapid thermal anneal process; The oxide layer of this first mask layer wherein, and this second mask layer includes one first oxide layer, a polymeric layer and one second oxide layer for finishing by an oxidation technology, and the method that forms this second mask layer comprises the following step:
On the surface of this substrate, form this first oxide layer;
On this first oxide layer and this side wall construction, form this polymeric layer with a chemical vapour deposition technique; And
Carry out a polymer oxidation technology, and then make part this polymeric layer oxidation and form this second oxide layer; Wherein this metal level comprises: a first metal layer, be formed on surface, this grid structure and this side wall construction of this substrate, and it is finished with a titanium or titanium nitride; And one second metal level, be formed on this first metal layer, it is finished with an aluminum metal or other metals, and this first metal layer carries out a quick nitriding process after being formed on surface, this grid structure and this side wall construction of this substrate, and then makes this first metal layer can follow completely on surface, this grid structure and this side wall construction in this substrate.
3. metal oxide semiconductor P-N junction schootky diode manufacture method as claimed in claim 2, wherein this first photoengraving carving technology comprises the following step:
On this first mask layer, form a photoresist layer;
On this photoresist layer, define a photoresist figure;
According to this photoresist figure this first mask layer is carried out etching and form this irrigation canals and ditches structure; And remove this photoresist layer; Wherein this second photoengraving carving technology comprises the following step:
Form a photoresist layer in the surface of this first mask layer and this substrate;
On this photoresist layer, define a photoresist figure;
According to this photoresist figure this first mask layer is carried out etching, and then remove this first mask layer of part to form this side wall construction; And
Remove this photoresist layer; Wherein the 3rd photoengraving carving technology comprises the following step:
On this second oxide layer, form a photoresist layer;
On this photoresist layer, define a photoresist figure;
According to this photoresist figure to this second oxide layer with carry out a Wet-type etching, and then this second oxide layer of part is removed;
According to this photoresist figure this polymeric layer is carried out a dry-etching, and then this polymeric layer removal of part is formed this grid structure in this irrigation canals and ditches structure; And
Remove this photoresist layer; Wherein the 4th photoengraving carving technology comprises the following step:
On surface, this side wall construction and this grid structure of this substrate, form a photoresist layer;
On this photoresist layer, define a photoresist figure;
According to this photoresist figure this second oxide layer is carried out one first Wet-type etching, and then this second oxide layer is removed;
According to this photoresist figure this polymeric layer is carried out a dry-etching, and then this polymeric layer of part is removed;
According to this photoresist figure first oxide layer is carried out one second Wet-type etching, and then this first oxide layer of part is removed the also surface of this substrate of exposed portions serve; And
Remove this photoresist layer; Wherein the 5th photoengraving carving technology comprises the following step:
On this metal level, form a photoresist layer;
On this photoresist layer, define a photoresist figure;
According to this photoresist figure this metal level is carried out etching, and then remove this metal level of part; And
Remove this photoresist layer.
4. metal oxide semiconductor P-N junction schootky diode manufacture method as claimed in claim 1 comprises the following step:
This substrate is carried out a heat merges technology, so make this metal level more driving fit on surface, this grid structure and the side wall construction of this substrate.
5. metal oxide semiconductor P-N junction schootky diode structure, it comprises at least:
One substrate has a surface;
One irrigation canals and ditches structure is formed at this substrate top;
One grid structure is formed in this irrigation canals and ditches structure and protrudes in the surface of this substrate;
One side wall construction is formed at the surface of this substrate and is positioned at the side of this grid structure;
One ion implanted region territory is to be formed in this substrate with the different zone of a plurality of depths, make the surface of this substrate form this ion implanted region territory of one first type zone and one second type, and this ion implanted region territory is adjacent to this grid structure; And
One metal level is formed on surface, this grid structure and this side wall construction of this substrate, and this metal level also forms Xiao Ji knot with first type zone on the surface of this substrate, and the one ohm of knot in this ion implanted region territory of second type and the formation of this metal level.
6. metal oxide semiconductor P-N junction schootky diode structure as claimed in claim 5, wherein this substrate is by a high-dopant concentration N type silicon substrate, i.e. N+ silicon substrate, with a low doping concentration N type epitaxial loayer, i.e. N-epitaxial loayer, constitute,
Wherein this ion implanted region territory is formed at the P type conduction type material in this low doping concentration N type epitaxial loayer.
7. metal oxide semiconductor P-N junction schootky diode structure as claimed in claim 5, wherein this side wall construction is finished by the monoxide material, and this grid structure comprises a grid oxic horizon and a polymeric layer.
8. metal oxide semiconductor P-N junction schootky diode structure as claimed in claim 5, wherein this metal level comprises:
One the first metal layer is formed on surface, this grid structure and this side wall construction of this substrate, and it is finished with a titanium or titanium nitride; And one second metal level, being formed on this first metal layer, it is finished with an aluminum metal or other metals.
9. metal oxide semiconductor P-N junction schootky diode structure as claimed in claim 5, wherein this ion implanted region territory can be this ion implanted region territory that is made of one first degree of depth injection zone and one second degree of depth injection zone.
10. metal oxide semiconductor P-N junction schootky diode structure as claimed in claim 5, wherein this ion implanted region territory can be this ion implanted region territory that is made of one first degree of depth injection zone, one second degree of depth injection zone and one the 3rd degree of depth injection zone.
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| US6404033B1 (en) * | 1999-04-01 | 2002-06-11 | Apd Semiconductor, Inc. | Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication |
| CN1366710A (en) * | 2000-04-06 | 2002-08-28 | Apd半导体公司 | Method of fabricating power rectifier device to vary operating parameters and resulting device |
| CN1669145A (en) * | 2002-05-16 | 2005-09-14 | 斯平内克半导体股份有限公司 | Schottky barrier CMOS device and method |
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