CN102254879B - 一种大尺寸硅芯片采用塑料实体封装的可控硅及其封装工艺 - Google Patents

一种大尺寸硅芯片采用塑料实体封装的可控硅及其封装工艺 Download PDF

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CN102254879B
CN102254879B CN2011101861697A CN201110186169A CN102254879B CN 102254879 B CN102254879 B CN 102254879B CN 2011101861697 A CN2011101861697 A CN 2011101861697A CN 201110186169 A CN201110186169 A CN 201110186169A CN 102254879 B CN102254879 B CN 102254879B
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silicon
chip
sintering
welded
adopts
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CN102254879A (zh
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王琳
吴家健
李攀
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JIANGSU JIEJIE MICROELECTRONICS CO Ltd
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JIANGSU JIEJIE MICROELECTRONICS CO Ltd
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Abstract

本发明涉及一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板和引脚，铜底板上通过铅锡焊料焊接有硅芯片，硅芯片上焊接有铝丝内引线，铝丝内引线外通过塑封料塑封，引脚之间开有塑料沟槽。本发明还涉及一种大尺寸硅芯片采用塑料实体封装的可控硅的封装工艺，包括烧结步骤、清洗步骤、焊线步骤、包封步骤、切筋步骤和测试步骤。本发明优点：工艺简单，具有热阻小、通态压降小的优点，提高了产品的可靠性。

Description

一种大尺寸硅芯片采用塑料实体封装的可控硅及其封装工艺
技术领域
本发明涉及一种大尺寸硅芯片采用塑料实体封装的可控硅。
本发明还涉及一种大尺寸硅芯片采用塑料实体封装的可控硅的封装工艺，属于半导体器件的封装技术领域。
背景技术
目前可控硅用塑料实体封装的芯片尺寸一般不会超过7×7mm，限制塑料实体封装芯片尺寸的主要因素是由于芯片、铜底板、塑封料这三种材料的膨胀系数差异较大，致使包封成产品的硅芯片会存在较大的塑料固化应力和热应力，对产品的可靠性存在极大的不利，所以该类产品的封装合格率和可靠性都比较低。但是因为塑料实体封装的产品在使用中因安装和电极连接都比较方便，所以行业内一直有人在追求较大芯片的实体封装，为了能够包封较大尺寸的芯片，有人在硅芯片的两面，增加了与单晶硅膨胀系数相近的钼片，这对减少硅芯片与铜底板以及塑封料的膨胀系数差异造成的应力是有利的，但是由于增加了两层导热系数偏小、电阻率偏大的金属片和两层焊料层，使器件的通态压降和热阻都会比较明显的增加，使器件产品在使用功率上受到一定的限制。
发明内容
本发明的目的是提供一种大尺寸硅芯片采用塑料实体封装的可控硅。
本发明的另一个目的是提供一种大尺寸硅芯片采用塑料实体封装的可控硅的封装工艺。
本发明解决其技术问题所采用的技术方案是：
一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板和引脚，所述铜底板上通过铅锡焊料焊接有硅芯片，所述硅芯片上焊接有铝丝内引线，所述铝丝内引线外通过塑封料塑封，所述引脚之间开有塑料沟槽。
所述铜底板上开有引流槽。
所述引流槽为方形、圆形、椭圆形或方形加对角线形状，所述引流槽断面为V型形状。
所述硅芯片上均匀焊接有多根铝丝内引线，所述每根铝丝内引线在硅芯片上压有两个焊点。
所述硅芯片上均匀焊接有5根铝丝内引线，所述硅芯片上表面覆有加厚的Al层，所述硅芯片下表面覆有加厚的Ag层。
所述Al层厚度为18─22μm，所述Ag层厚度为8─12μm。
所述塑封料为低应力塑封料。
一种大尺寸硅芯片采用塑料实体封装的可控硅的封装工艺，包括烧结步骤、清洗步骤、焊线步骤、包封步骤、切筋步骤和测试步骤，所述烧结步骤：
（1）、将框架上用对应芯片的点胶头点上焊膏，再将芯片装到焊膏上；
（2）、将装配好芯片的框架送入恒温状态并通有保护氮气的烧结轨道，烧结轨道内的烧结温度设定：A段设定控温220-270℃；B段设定控温2800-3200℃；C段设定控温330-380℃，控制氮气流量为40-80L，待焊料融化后进行芯片的揉动，将芯片沿底板的平面延伸方向进行焊料的摩擦，让助焊剂充分溢出、使焊料在芯片底部充分润湿；
（3）、将完成上述糅片的框架按每秒2-4℃的速率进行冷却，然后进入后续工序。
本发明的有益效果是：
1、该产品采取的产品结构比使用低膨胀系数过渡层的结构，简洁、紧凑，且具有热阻小、通态压降小的优点。
2、由于产品的结构比较简单，所以该产品的工艺路线比较简单。
3、产品的焊料的空洞率比较低，可以做到空洞率为4%以下。
4、产品采用了多根铝丝、多焊点分布的结构，使硅芯片的电流分布比较均匀，明显减少了产品在工作中产生热斑的几率，提高了产品的可靠性。
5、该产品采取了两面引线膜增厚和适当增厚硅芯片底面焊料层厚度的结构，可以减少封装应力和热应力对芯片造成的横向剪切力，提高了产品的可靠性。
6、产品的通态压降比较小，用200A 测试压降值一般都会小于1.5V。 
附图说明
下面结合附图和具体实施方式对本发明作进一步说明。
图1为本发明的结构示意图。
图2为铜底板的结构示意图。
图3为图2中沿A-A方向的剖视图。
图4为图3中B处的局部放大示意图。
图5为铝丝内引线排布示意图。
图6为本发明的外形图。
其中：1、塑封料，2、铝丝内引线，3、硅芯片，4、铅锡焊料，5、铜底板，6、引脚，7、塑料沟槽，8、引流槽，9、焊点。
具体实施方式
以下实施例仅是用来说明本发明，但不限定本发明的保护范围。
实施例1
如图1至6所示，本发明的一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板5和引脚6，铜底板5上通过铅锡焊料4焊接有硅芯片3，硅芯片3上焊接有铝丝内引线2，铝丝内引线2外通过塑封料1塑封，塑封料1采用低应力塑封料，引脚6之间开有塑料沟槽7，铜底板5上开有引流槽8，引流槽8为方形，引流槽8断面为V型形状，硅芯片3上焊接有5根铝丝内引线2，每根铝丝内引线2在硅芯片3上压有两个焊点9，硅芯片3上表面覆有加厚的Al层，Al层厚度为18μm，硅芯片3下表面覆有加厚的Ag层，Ag层厚度为8μm。
实施例2
如图1至6所示，本发明的一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板5和引脚6，铜底板5上通过铅锡焊料4焊接有硅芯片3，硅芯片3上焊接有铝丝内引线2，铝丝内引线2外通过塑封料1塑封，塑封料1采用低应力塑封料，引脚6之间开有塑料沟槽7，铜底板5上开有引流槽8，引流槽8为圆形，引流槽8断面为V型形状，硅芯片3上焊接有5根铝丝内引线2，每根铝丝内引线2在硅芯片3上压有两个焊点9，硅芯片3上表面覆有加厚的Al层，Al层厚度为20μm，硅芯片3下表面覆有加厚的Ag层，Ag层厚度为10μm。
实施例3
如图1至6所示，本发明的一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板5和引脚6，铜底板5上通过铅锡焊料4焊接有硅芯片3，硅芯片3上焊接有铝丝内引线2，铝丝内引线2外通过塑封料1塑封，塑封料1采用低应力塑封料，引脚6之间开有塑料沟槽7，铜底板5上开有引流槽8，引流槽8为方形加对角线形状，引流槽8断面为V型形状，硅芯片3上焊接有5根铝丝内引线2，每根铝丝内引线2在硅芯片3上压有两个焊点9，硅芯片3上表面覆有加厚的Al层，Al层厚度为22μm，硅芯片3下表面覆有加厚的Ag层，Ag层厚度为12μm。
实施例4
此为本发明一种大尺寸硅芯片采用塑料实体封装的可控硅的封装工艺的具体实施例：
一种大尺寸硅芯片采用塑料实体封装的可控硅的封装工艺，包括烧结步骤、清洗步骤、焊线步骤、包封步骤、切筋步骤和测试步骤，具体步骤如下：
一、烧结步骤
（1）、将框架上用对应芯片的点胶头点上焊膏，再将芯片装到焊膏上；
（2）、将装配好芯片的框架送入恒温状态并通有保护氮气的烧结轨道，烧结轨道内的烧结温度设定：A段设定控温220-270℃；B段设定控温2800-3200℃；C段设定控温330-380℃，控制氮气流量为40-80L，待焊料融化后进行芯片的揉动，将芯片沿底板的平面延伸方向进行焊料的摩擦，让助焊剂充分溢出、使焊料在芯片底部充分润湿；
（3）、将完成上述糅片的框架按每秒2-4℃的速率进行冷却。
二、清洗步骤
（1）、将待洗的框架用不锈钢提篮放入多槽超声波清洗机中的一槽进行超声清洗7-9分钟，清洗溶剂为三氯乙烯，控制一槽温度为25±20℃；
（2）、结束一槽清洗后，将框架移入二槽继续超声清洗7-9分钟，控制二槽温度为25±20℃；
（3）、最后将清洗好的框架在移入三槽，控制三槽温度为75±10℃进行三氯乙烯的蒸汽浴净化烘干。 
三、焊线步骤
（1）、将待焊线框架放到焊线机的夹具上固定好，并完成焊点模板的编辑制作；
（2）、启动焊线机完成铝丝内引线的焊接，焊线机的超声功率为8 W，超声压力为4.6 Pa，超声时间为4-6秒。
四、包封步骤
（1）、首先将待包封框架置预热台上进行预热，预热温度为170-200℃；
（2）、预热好的框架放入包封模具中，依次合模、注料、前固化、开模、取料，合模的模温为160-200℃，合模压力为160-185吨，注料压力为4-6吨，前固化时间为180-220秒；
（3）、一批产品完成包封后，放入烘箱进行后固化，后固化温度为160-180℃，后固化时间为10-14个小时。
五、切筋步骤
（1）、将待切筋的框架置于切筋模上，确认定位准确；
（2）、启动切筋机，控制油压为4-6MPa，分离产品并装入塑料管中。
六、测试步骤
 (1)、调用对应产品的测试程序，启动自动测试机进行测试；
(2)、首检测出的合格品，确认测试结果无误后确认测试程序，继续完成产品的测试。
实施例5
一种大尺寸硅芯片采用塑料实体封装的可控硅的封装工艺，包括烧结步骤、清洗步骤、焊线步骤、包封步骤、切筋步骤和测试步骤，所述烧结步骤：
（1）、将框架上用对应芯片的点胶头点上焊膏，再将芯片装到焊膏上；
（2）、将装配好芯片的框架送入恒温状态并通有保护氮气的烧结轨道，烧结轨道内的烧结温度设定：A段设定控温220℃；B段设定控温2800℃；C段设定控温330℃，控制氮气流量为40L，待焊料融化后进行芯片的揉动，将芯片沿底板的平面延伸方向进行焊料的摩擦，让助焊剂充分溢出、使焊料在芯片底部充分润湿；
（3）、将完成上述糅片的框架按每秒2℃的速率进行冷却，其它步骤同实施例4。
实施例6
一种大尺寸硅芯片采用塑料实体封装的可控硅的封装工艺，包括烧结步骤、清洗步骤、焊线步骤、包封步骤、切筋步骤和测试步骤，所述烧结步骤：
（1）、将框架上用对应芯片的点胶头点上焊膏，再将芯片装到焊膏上；
（2）、将装配好芯片的框架送入恒温状态并通有保护氮气的烧结轨道，烧结轨道内的烧结温度设定：A段设定控温250℃；B段设定控温3000℃；C段设定控温350℃，控制氮气流量为60L，待焊料融化后进行芯片的揉动，将芯片沿底板的平面延伸方向进行焊料的摩擦，让助焊剂充分溢出、使焊料在芯片底部充分润湿；
（3）、将完成上述糅片的框架按每秒3℃的速率进行冷却，其它步骤同实施例4。
实施例7
一种大尺寸硅芯片采用塑料实体封装的可控硅的封装工艺，包括烧结步骤、清洗步骤、焊线步骤、包封步骤、切筋步骤和测试步骤，所述烧结步骤：
（1）、将框架上用对应芯片的点胶头点上焊膏，再将芯片装到焊膏上；
（2）、将装配好芯片的框架送入恒温状态并通有保护氮气的烧结轨道，烧结轨道内的烧结温度设定：A段设定控温270℃；B段设定控温3200℃；C段设定控温380℃，控制氮气流量为80L，待焊料融化后进行芯片的揉动，将芯片沿底板的平面延伸方向进行焊料的摩擦，让助焊剂充分溢出、使焊料在芯片底部充分润湿；
（3）、将完成上述糅片的框架按每秒4℃的速率进行冷却，其它步骤同实施例4。
采用硅芯片直接用软焊料烧结到铜底板上，硅芯片上面焊接铝丝内引线的产品结构形式（如图1），使产品的结构简洁、通态压降小、热阻比较小。我们之所以采用以上结构的原因是：如果为减小包封应力而采用硅芯片两面用钼片作为过渡层的结构，会使产品增加两层钼片和两层焊料层结构，钼和铅锡焊料的导热率和电阻率都远比铜和铝要大得多（见下表），
                               铜        铝        钼         铅
电阻率：（10-8Ωm）  1.75       2.83      5.6        20.68
导热系数（W/MK）   401       237        138        34.8
为了避免钼片和焊料层对产品造成的通态压降和热阻的增大，我们避开了使用钼片的结构，而采用了硅芯片直接烧结到铜底板上的产品结构。
为了满足产品结构的需要，我们加厚了芯片两面的金属化电极的厚度，上表面的Al增加到20μm、下表面的Ag增加到10μm，从而减少了电流沿芯片表面流动的电阻，降低了芯片在工作中的发热，同时也减少了由于硅芯片和塑封料及铜底板因为膨胀系数差异而作用到硅芯片上的的剪切力，这样处理的硅芯片的可靠性会大大的提高。 
适当加厚芯片底面焊料层的厚度（50-80微米），用软焊料来吸收铜底板和硅芯片之间的热膨胀应力。我们采用压有特殊引流槽的铜底板（如图2至4），可以使芯片底下的焊料层向外铺展的面积减少，从而保证了焊料层的厚度；另外，我们经过多家焊料的对比，优选了适合于大尺寸芯片使用的焊膏（北京达博专配的295焊膏），满足了既使芯片底部的焊料没有空洞，又保持了足够的焊料层厚度。
为了使芯片底部的焊料层的空洞减到最少，我们还采取在烧结过程中使用手工揉片的办法（在焊料熔融的状态下，使用合适的夹具，将硅芯片沿底板的平面延伸方向进行焊料的摩擦），通过手工揉片可以使焊料和工件之间做到良好的润湿，烧成的产品焊料层的空洞率一般可以控制在4%以下，完成烧结的框架要认真进行缓慢冷却。
采用铝丝作为内引线，对内引线的排布给出了明确的要求：每个芯片上要压5根500μm直径的铝丝，每根铝丝在芯片上要压两个焊点，铝引线以及压点的位置排布要求均匀分布（如图5）。这样连接的内引线可以使芯片上的电流做到均匀分布，以减少产生热斑的机会。
采用低应力塑封料和合理的注塑条件（注进压力为5.8吨、注进时间为35秒、最终注进速度为每秒10mm），以保正产品的合格率和可靠性。

Claims (5)

1.一种大尺寸硅芯片采用塑料实体封装的可控硅，包括铜底板和引脚，其特征在于：所述铜底板上通过铅锡焊料焊接有硅芯片，所述硅芯片上焊接有铝丝内引线，所述铝丝内引线外通过塑封料塑封，所述引脚之间开有塑料沟槽；所述铜底板上开有引流槽；所述硅芯片上均匀焊接有多根铝丝内引线，所述每根铝丝内引线在硅芯片上压有两个焊点；所述硅芯片上均匀焊接有5根铝丝内引线，所述硅芯片上表面覆有加厚的Al层，所述硅芯片下表面覆有加厚的Ag层。
2.根据权利要求1所述的一种大尺寸硅芯片采用塑料实体封装的可控硅，其特征在于：所述引流槽为方形、圆形、椭圆形或方形加对角线形状，所述引流槽断面为V型形状。
3.根据权利要求1所述的一种大尺寸硅芯片采用塑料实体封装的可控硅，其特征在于：所述Al层厚度为18─22μm，所述Ag层厚度为8─12μm。
4.根据权利要求1所述的一种大尺寸硅芯片采用塑料实体封装的可控硅，其特征在于：所述塑封料为低应力塑封料。
5.一种大尺寸硅芯片采用塑料实体封装的可控硅的封装工艺，包括烧结步骤、清洗步骤、焊线步骤、包封步骤、切筋步骤和测试步骤，其特征在于：所述烧结步骤：
（1）、将框架上用对应芯片的点胶头点上焊膏，再将芯片装到焊膏上；
（2）、将装配好芯片的框架送入恒温状态并通有保护氮气的烧结轨道，烧结轨道内的烧结温度设定：A段设定控温220-270℃；B段设定控温2800-3200℃；C段设定控温330-380℃，控制氮气流量为40-80L，待焊料融化后进行芯片的揉动，将芯片沿底板的平面延伸方向进行焊料的摩擦，让助焊剂充分溢出、使焊料在芯片底部充分润湿；
（3）、将完成上述糅片的框架按每秒2-4℃的速率进行冷却，然后进入后续工序。
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