CN101123230A - 半导体器件的内引线结构 - Google Patents

半导体器件的内引线结构 Download PDF

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Publication number
CN101123230A
CN101123230A CNA2007100455469A CN200710045546A CN101123230A CN 101123230 A CN101123230 A CN 101123230A CN A2007100455469 A CNA2007100455469 A CN A2007100455469A CN 200710045546 A CN200710045546 A CN 200710045546A CN 101123230 A CN101123230 A CN 101123230A
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China
Prior art keywords
lead wire
chip
inner lead
lead
internal lead
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Pending
Application number
CNA2007100455469A
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English (en)
Inventor
褚卫兵
施震宇
曾小光
陈卫东
罗礼雄
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KUIHE PRECISION ELECTRONIC (SHANGHAI) CO Ltd
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KUIHE PRECISION ELECTRONIC (SHANGHAI) CO Ltd
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Application filed by KUIHE PRECISION ELECTRONIC (SHANGHAI) CO Ltd filed Critical KUIHE PRECISION ELECTRONIC (SHANGHAI) CO Ltd
Priority to CNA2007100455469A priority Critical patent/CN101123230A/zh
Priority to PCT/CN2007/003214 priority patent/WO2009030078A1/zh
Publication of CN101123230A publication Critical patent/CN101123230A/zh
Pending legal-status Critical Current

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Abstract

本发明涉及一种半导体器件的内引线结构，包括用来电连接引线框架与装载在所述引线框架上芯片的内引线，其特征在于，在所述芯片的表面对应与所述内引线连接处焊接有桥接结构，所述桥接结构为金属介质，具体的，为金球或金合金球。半导体器件的内引线结构通过所述的桥接结构使内引线与所述芯片形成电连接，彻底解决了完全使用其它金属材料如铜作为内引线的工艺上的缺陷，提高了生产效率及产品的可靠性，同时比使用金线作为半导体器件的内引线大大节省了成本。

Description

半导体器件的内引线结构
技术领域
本发明涉及一种半导体器件的内引线结构，更具体的，涉及半导体器件的内引线结构用桥接结构。
背景技术
内引线被广泛用于半导体集成电路、分立元器件和模块等半导体器件的封装中，以完成芯片与引线框架内引脚的连接，如图1所示，芯片1通过内引线3与引线脚的配线区21连接，形成半导体芯片1向外部交换传递电信号的路径。
目前的内引线主要有金线、铝线等材料并借助专用设备完成芯片和引线框架内引脚的连接。但随着国际市场黄金价格的持续走高，金线的成本也越来越高，而铝线的设备投资大且工艺上有很多局限性。于是，近些年来又开发了用铜线或合金线来替代金线和传统的铝线工艺。虽然铜线能明显降低成本和提高电性能，但在实际工艺中，凸现出铜线(≤直径2mil，1mil＝0.001英寸)在直接焊接的过程中存在很多工艺问题，使得发展直径4mil、5mil、6mil…铜线焊接技术更加困难和停滞不前。具体的，通过铜线经高压放电形成铜球，然后铜球和芯片表面在一定温度下，通过金线焊接机施以压力、超声波能量的作用，达到焊接目的。由于在铜球形成过程中，分子再结晶和铜球表面的氧化使得铜球变得很硬，坚硬的铜球31在焊接过程中极易发生脱焊(如图2A所示)，或者挤掉被焊接芯片1表面的金属层11诸如铝层(如图2B所示)，甚至将金属层11和芯片1打碎或打裂，随着线径变粗，这种问题更加突出。而发生上述问题的器件往往又不能在成品测试中被筛选出来，使得产品可能有潜在的可靠性问题。虽然目前依靠增加芯片表面金属厚度来减少发生可靠性问题的概率，这样又增加了晶元厂的成本、生产周期和效率等。由于上述铜线直接焊接的工艺应用存在的局限性，至今也没能达到大规模应用，无法替换金线。
因此，为了降低封装成本，既需要用其它金属代替金线作为半导体器件的内引线，同时又要克服利用其它金属作为内引线带来的工艺上的缺陷、提高生产效率及产品可靠性。
发明内容
为实现上述目的，本发明提供一种半导体器件的内引线结构，包括用来电连接引线框架与装载在所述引线框架上芯片的内引线，其特征在于：在所述芯片的表面对应与内引线连接的焊接区域焊接有桥接结构，所述内引线焊接在所述桥接结构上。
所述桥接结构为金属介质，具体的，为至少一个金球或金合金物形成的球状介质。
通过本发明所述的桥接结构，在铜材料等作为内引线时，铜引线焊接在所述金球上，这样，金球起到了很好的缓冲作用，避免了坚硬的铜球直接与芯片表面接触，既彻底解决有现有技术细铜线直接焊接在芯片表面的缺陷，也为更粗的铜线应用提供了很好的解决方案，同时利用铜线与桥接结构连接的内引线结构，可以代替金线作为内引线，大大降低了封装成本、提高了生产效率及产品可靠性。
以下将结合附图对本发明的构思、具体结构及产生的技术效果作进一步说明，以充分地了解本发明的目的、特征和效果。
附图说明
图1为现有技术的半导体器件的内引线结构图；
图2A、2B为现有的铜线焊接工艺的放大示意图；
图3为本发明的半导体器件的内引线结构示意图；
图4A、4B为本发明内引线结构中桥接结构的放大示意图；
图5为本发明的一个具体实施例的内引线结构的放大示意图；
图6为本发明内引线结构装配的俯视图。
具体实施方式
下面结合附图进一步说明本发明的实施例。
如图3所示为本发明的半导体器件的内引线结构，引线框架2的配线区域21通过内引线3与芯片1形成电连接。在对应连接内引线3的芯片1表面的焊接区域，设置有金球32，作为桥接结构，所述内引线3与金球32连接，实现引线框架2与芯片1的电连接。
在实施例中，铜线作为芯片1与引线框架2的配线区域21电连接的内引线3，如图4A、4B所示，在铜线3焊接到芯片上之前，利用金线焊接设备在芯片1表面焊接区域上对应将要焊上的铜线3的位置和数量，在相应位置上焊上金球32。然后，再利用现有的工艺，将铜线3的端部经高压放电形成铜球31，在一定温度下，通过金线焊接设备施以压力、超声波能量的作用，将铜球31焊接在金球32上，这样金球32作为铜线3和芯片1表面之间的桥介质，避免了坚硬的铜球31直接接触到芯片1表面，不会发生脱焊，更不会将金属层11打碎或打裂，金属层11保持完好。因此，通过金球32作为桥接结构的缓冲作用，彻底解决了将铜球31直接焊接到芯片1上的工艺缺陷。
具体的，如图5所示，焊接的金球32可以为一个或多个，以叠加或并列的方式焊接在芯片1的表面焊接区域内，内引线3的铜球31焊接在并列或叠加的金球32上，构成本发明的内引线结构。
图6为本发明内引线结构装配的俯视图，由图可见，在芯片1表面对应铜线3焊接的位置，焊接有金球32，金球32分布焊接在芯片1上，铜线3的铜球31焊接在所述金球32上，使芯片1与引线框架2形成电连接。
在具体实施例中，可以用其它金属诸如铝替代铜作为内引线。还可以用诸如金合金物焊接在芯片表面作为桥接结构。所述桥接结构不限于球状，还可为方形或不规则形状等任意形状。
所述的桥接结构可应用在半导体集成电路、半导体分立元器件和半导体集成电路模块的内引线键合面上，还可以用在MOSFET系列，JFET、SCR、IGBT、二极管、晶体管等功率器件上。
综上所述，本说明书中所述的只是本发明的较佳具体实施例，以上实施例仅用以说明本发明的技术方案而非限制。凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在本发明的权利要求保护范围之内。

Claims (4)

1.一种半导体器件的内引线结构，包括用来电连接引线框架与装载在所述引线框架上芯片的内引线，其特征在于：在所述芯片的表面对应与内引线连接的焊接区域焊接有桥接结构，所述内引线焊接在所述桥接结构上。
2.如权利要求1所述的半导体器件的内引线结构，其特征在于，所述桥接结构为金属介质。
3.如权利要求2所述的半导体器件的内引线结构，其特征在于，所述金属介质为金或金合金物形成。
4.如权利要求2所述的半导体器件的内引线结构，其特征在于，所述金属介质为球状。
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CN101800205B (zh) * 2009-02-09 2012-07-18 日月光半导体制造股份有限公司 半导体封装构造及其封装方法

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CN101800205B (zh) * 2009-02-09 2012-07-18 日月光半导体制造股份有限公司 半导体封装构造及其封装方法
TWI452640B (zh) * 2009-02-09 2014-09-11 Advanced Semiconductor Eng 半導體封裝構造及其封裝方法
CN102254879A (zh) * 2011-07-05 2011-11-23 启东市捷捷微电子有限公司 一种大尺寸硅芯片采用塑料实体封装的可控硅及其封装工艺

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