CN102254854A - 双沟槽隔离结构的形成方法 - Google Patents

双沟槽隔离结构的形成方法 Download PDF

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CN102254854A
CN102254854A CN2011102185916A CN201110218591A CN102254854A CN 102254854 A CN102254854 A CN 102254854A CN 2011102185916 A CN2011102185916 A CN 2011102185916A CN 201110218591 A CN201110218591 A CN 201110218591A CN 102254854 A CN102254854 A CN 102254854A
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CN102254854B (zh
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高超
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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CN102254854B CN102254854B (zh) 2016-06-01

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104183538A (zh) * 2013-05-21 2014-12-03 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN113572021A (zh) * 2021-07-22 2021-10-29 上海新微半导体有限公司 Dfb激光器正面电极窗口自对准制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020081807A1 (en) * 2000-12-21 2002-06-27 Daniel Xu Dual trench isolation for a phase-change memory cell and method of making same
CN1521826A (zh) * 2003-01-23 2004-08-18 ������������ʽ���� 双槽隔离的交叉存储器阵列及其制造方法
US20050106837A1 (en) * 2003-11-14 2005-05-19 Fujitsu Limited Method for manufacturing a semiconductor device
CN1862791A (zh) * 2005-05-13 2006-11-15 株式会社瑞萨科技 半导体器件制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020081807A1 (en) * 2000-12-21 2002-06-27 Daniel Xu Dual trench isolation for a phase-change memory cell and method of making same
CN1521826A (zh) * 2003-01-23 2004-08-18 ������������ʽ���� 双槽隔离的交叉存储器阵列及其制造方法
US20050106837A1 (en) * 2003-11-14 2005-05-19 Fujitsu Limited Method for manufacturing a semiconductor device
CN1862791A (zh) * 2005-05-13 2006-11-15 株式会社瑞萨科技 半导体器件制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104183538A (zh) * 2013-05-21 2014-12-03 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN104183538B (zh) * 2013-05-21 2018-03-30 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN113572021A (zh) * 2021-07-22 2021-10-29 上海新微半导体有限公司 Dfb激光器正面电极窗口自对准制备方法
CN113572021B (zh) * 2021-07-22 2022-06-21 上海新微半导体有限公司 Dfb激光器正面电极窗口自对准制备方法

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