CN102253540B - 液晶显示装置 - Google Patents
液晶显示装置 Download PDFInfo
- Publication number
- CN102253540B CN102253540B CN201110149453.7A CN201110149453A CN102253540B CN 102253540 B CN102253540 B CN 102253540B CN 201110149453 A CN201110149453 A CN 201110149453A CN 102253540 B CN102253540 B CN 102253540B
- Authority
- CN
- China
- Prior art keywords
- liquid crystal
- wall
- layer
- dielectric film
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 419
- 239000000463 material Substances 0.000 claims abstract description 126
- 239000010408 film Substances 0.000 claims description 326
- 239000000758 substrate Substances 0.000 claims description 196
- 230000001939 inductive effect Effects 0.000 claims description 120
- 229920005989 resin Polymers 0.000 claims description 69
- 239000011347 resin Substances 0.000 claims description 69
- 239000010409 thin film Substances 0.000 claims description 51
- 239000012069 chiral reagent Substances 0.000 claims description 14
- 239000012212 insulator Substances 0.000 abstract description 18
- 230000001747 exhibiting effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 517
- 238000000034 method Methods 0.000 description 81
- 230000005684 electric field Effects 0.000 description 65
- 230000008569 process Effects 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 27
- 239000011229 interlayer Substances 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 20
- 239000008393 encapsulating agent Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 14
- 230000008859 change Effects 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 13
- 238000009413 insulation Methods 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 238000003475 lamination Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 239000011651 chromium Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000011368 organic material Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 239000004990 Smectic liquid crystal Substances 0.000 description 8
- -1 acryl Chemical group 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910003437 indium oxide Inorganic materials 0.000 description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 230000011218 segmentation Effects 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 230000009471 action Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000002322 conducting polymer Substances 0.000 description 7
- 229920001940 conductive polymer Polymers 0.000 description 7
- 238000011049 filling Methods 0.000 description 7
- 229910010272 inorganic material Inorganic materials 0.000 description 7
- 239000011147 inorganic material Substances 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 239000004408 titanium dioxide Substances 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229910003471 inorganic composite material Inorganic materials 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 241001062009 Indigofera Species 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000013039 cover film Substances 0.000 description 5
- 210000002858 crystal cell Anatomy 0.000 description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 241001597008 Nomeidae Species 0.000 description 4
- 230000003098 cholesteric effect Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 150000003431 steroids Chemical class 0.000 description 4
- 229920001218 Pullulan Polymers 0.000 description 3
- 239000004373 Pullulan Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000000739 chaotic effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- ZBAFFZBKCMWUHM-UHFFFAOYSA-N propiram Chemical compound C=1C=CC=NC=1N(C(=O)CC)C(C)CN1CCCCC1 ZBAFFZBKCMWUHM-UHFFFAOYSA-N 0.000 description 3
- 229950003779 propiram Drugs 0.000 description 3
- 235000019423 pullulan Nutrition 0.000 description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 208000007578 phototoxic dermatitis Diseases 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- YYPNJNDODFVZLE-UHFFFAOYSA-N 3-methylbut-2-enoic acid Chemical compound CC(C)=CC(O)=O YYPNJNDODFVZLE-UHFFFAOYSA-N 0.000 description 1
- RWHRFHQRVDUPIK-UHFFFAOYSA-N 50867-57-7 Chemical compound CC(=C)C(O)=O.CC(=C)C(O)=O RWHRFHQRVDUPIK-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 240000001439 Opuntia Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000549 coloured material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000005010 epoxy-amino resin Substances 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- AHJCYBLQMDWLOC-UHFFFAOYSA-N n-methyl-n-silylmethanamine Chemical compound CN(C)[SiH3] AHJCYBLQMDWLOC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000009182 swimming Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- UBKFNPJMWUJHGB-UHFFFAOYSA-N titanium(4+);tetraazide Chemical compound [Ti+4].[N-]=[N+]=[N-].[N-]=[N+]=[N-].[N-]=[N+]=[N-].[N-]=[N+]=[N-] UBKFNPJMWUJHGB-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K19/00—Liquid crystal materials
- C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
- C09K19/38—Polymers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13398—Spacer materials; Spacer properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/13793—Blue phases
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010116954 | 2010-05-21 | ||
| JP2010-116954 | 2010-05-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102253540A CN102253540A (zh) | 2011-11-23 |
| CN102253540B true CN102253540B (zh) | 2015-06-03 |
Family
ID=44972250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110149453.7A Expired - Fee Related CN102253540B (zh) | 2010-05-21 | 2011-05-23 | 液晶显示装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8928846B2 (enExample) |
| JP (1) | JP5808573B2 (enExample) |
| KR (1) | KR20110128238A (enExample) |
| CN (1) | CN102253540B (enExample) |
| TW (1) | TWI522708B (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010156960A (ja) * | 2008-12-03 | 2010-07-15 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP5840873B2 (ja) * | 2011-06-14 | 2016-01-06 | 株式会社ジャパンディスプレイ | マザー基板 |
| CN102645798B (zh) * | 2012-02-27 | 2014-10-15 | 京东方科技集团股份有限公司 | 一种显示装置及其制作方法 |
| JP5835051B2 (ja) * | 2012-03-27 | 2015-12-24 | Jsr株式会社 | アレイ基板、液晶表示素子およびアレイ基板の製造方法 |
| CN103365006B (zh) * | 2012-04-10 | 2016-05-11 | 群康科技(深圳)有限公司 | 阵列基板、具有其的液晶显示装置及其制造方法 |
| TW201341916A (zh) | 2012-04-12 | 2013-10-16 | Innocom Tech Shenzhen Co Ltd | 畫素結構及應用其之液晶顯示結構 |
| TWI485501B (zh) * | 2012-04-19 | 2015-05-21 | Innocom Tech Shenzhen Co Ltd | 顯示裝置及其製造方法 |
| JP5944752B2 (ja) * | 2012-06-12 | 2016-07-05 | 株式会社ジャパンディスプレイ | 液晶表示装置及びその製造方法 |
| CN103576358B (zh) * | 2012-07-31 | 2016-09-28 | 群康科技(深圳)有限公司 | 低色偏的液晶面板及显示器 |
| CN102830845B (zh) * | 2012-08-21 | 2015-07-01 | 深圳市立德通讯器材有限公司 | 一种触摸显示屏的制造方法 |
| CN102952551B (zh) * | 2012-10-24 | 2014-10-22 | 京东方科技集团股份有限公司 | 聚合物分散蓝相液晶材料及其制备方法、液晶显示装置 |
| CN102929046B (zh) * | 2012-11-05 | 2016-05-11 | 京东方科技集团股份有限公司 | 蓝相液晶面板、装置及其制造方法 |
| KR102091724B1 (ko) * | 2013-03-18 | 2020-03-20 | 삼성전자 주식회사 | 비휘발성 메모리 장치 및 그 제조 방법 |
| TWI472833B (zh) * | 2013-06-06 | 2015-02-11 | Innolux Corp | 顯示裝置 |
| CN103728796A (zh) | 2014-01-13 | 2014-04-16 | 京东方科技集团股份有限公司 | 一种显示基板和显示装置 |
| CN103792742A (zh) * | 2014-01-23 | 2014-05-14 | 京东方科技集团股份有限公司 | 液晶显示器件 |
| CN103792743B (zh) * | 2014-02-20 | 2016-06-08 | 河北工业大学 | 一种低驱动电压、视角连续可控的蓝相液晶显示器 |
| CN104516156A (zh) * | 2014-12-26 | 2015-04-15 | 南京中电熊猫液晶显示科技有限公司 | 一种液晶显示面板 |
| CN104714344A (zh) | 2015-03-31 | 2015-06-17 | 合肥京东方光电科技有限公司 | 蓝相液晶显示装置及其制作方法 |
| CN105137677A (zh) * | 2015-10-09 | 2015-12-09 | 河北工业大学 | 一种蓝相液晶显示器装置 |
| CN105223740B (zh) * | 2015-11-05 | 2019-01-22 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法、液晶显示面板 |
| CN106292037B (zh) * | 2016-10-10 | 2019-06-14 | 南京中电熊猫液晶显示科技有限公司 | 蓝相液晶阵列基板 |
| CN106353905A (zh) * | 2016-10-10 | 2017-01-25 | 南京中电熊猫液晶显示科技有限公司 | 蓝相液晶阵列基板的制造方法 |
| CN110741315A (zh) * | 2017-06-12 | 2020-01-31 | 三菱电机株式会社 | 液晶显示装置 |
| CN108663864B (zh) * | 2018-07-19 | 2021-01-26 | 京东方科技集团股份有限公司 | 一种显示面板及其制作方法、工作方法和显示装置 |
| CN110109295B (zh) * | 2019-04-08 | 2022-01-04 | Tcl华星光电技术有限公司 | 蓝相液晶显示面板 |
| EP3828625A1 (en) * | 2019-11-26 | 2021-06-02 | HighVisTec GmbH | Liquid crystal device |
| TWI811854B (zh) * | 2021-07-23 | 2023-08-11 | 友達光電股份有限公司 | 光學感測裝置 |
Family Cites Families (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
| DE69121782T2 (de) * | 1990-05-31 | 1997-01-30 | Canon Kk | Flüssigkristall-Farbanzeige und Verfahren zu seiner Herstellung |
| US5517344A (en) | 1994-05-20 | 1996-05-14 | Prime View Hk Limited | System for protection of drive circuits formed on a substrate of a liquid crystal display |
| JPH09105953A (ja) | 1995-10-12 | 1997-04-22 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| US6449024B1 (en) * | 1996-01-26 | 2002-09-10 | Semiconductor Energy Laboratory Co., Inc. | Liquid crystal electro-optical device utilizing a polymer with an anisotropic refractive index |
| JP3708620B2 (ja) | 1996-03-01 | 2005-10-19 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型液晶電気光学装置 |
| TW507091B (en) | 1997-10-30 | 2002-10-21 | Matsushita Electric Industrial Co Ltd | Method of manufacturing liquid crystal display devices |
| TW559679B (en) | 1997-11-17 | 2003-11-01 | Semiconductor Energy Lab | Picture display device and method of driving the same |
| JP3210619B2 (ja) * | 1997-12-17 | 2001-09-17 | 松下電器産業株式会社 | 液晶表示装置 |
| US6429914B1 (en) | 1997-12-17 | 2002-08-06 | Matsushita Electric Industrial Co., Ltd. | Polymer dispersion type liquid crystal display panel and its manufacturing method |
| JPH11264991A (ja) | 1998-01-13 | 1999-09-28 | Matsushita Electric Ind Co Ltd | 液晶表示素子の製造方法 |
| JPH11305266A (ja) * | 1998-04-24 | 1999-11-05 | Toshiba Corp | 液晶表示装置 |
| EP1031873A3 (en) | 1999-02-23 | 2005-02-23 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
| TW573190B (en) | 2000-08-14 | 2004-01-21 | Samsung Electronics Co Ltd | Liquid crystal display and fabricating method thereof |
| KR100345961B1 (en) | 2001-01-12 | 2002-08-01 | Samsung Electronics Co Ltd | Liquid crystal display with wide viewing angle |
| JP4037089B2 (ja) * | 2000-11-10 | 2008-01-23 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| KR100381862B1 (ko) | 2000-11-22 | 2003-05-01 | 삼성전자주식회사 | 액정 표시 장치 |
| JP2003216059A (ja) | 2002-01-24 | 2003-07-30 | Sharp Corp | 表示素子およびその製造方法 |
| US20040160566A1 (en) | 2003-02-17 | 2004-08-19 | Shinichi Kawabe | Liquid crystal display panel with fluid control wall |
| US20050122465A1 (en) | 2003-09-30 | 2005-06-09 | Citizen Watch Co., Ltd. | Method for manufacturing an apparatus using electro-optical modulating material |
| JP3789449B2 (ja) | 2003-10-09 | 2006-06-21 | Ｎｅｃ液晶テクノロジー株式会社 | 液晶パネルの製造方法 |
| JP4221270B2 (ja) | 2003-10-24 | 2009-02-12 | Ｎｅｃ液晶テクノロジー株式会社 | 液晶表示装置およびその製造方法 |
| JP4013892B2 (ja) * | 2003-11-28 | 2007-11-28 | 旭硝子株式会社 | 回折素子および光減衰器 |
| KR20060104994A (ko) | 2003-11-27 | 2006-10-09 | 아사히 가라스 가부시키가이샤 | 광학적 등방성을 갖는 액정을 사용한 광학 소자 |
| KR100687681B1 (ko) | 2003-12-18 | 2007-03-02 | 샤프 가부시키가이샤 | 표시 소자 및 표시 장치, 표시 소자의 구동 방법, 및프로그램 |
| KR100649039B1 (ko) | 2004-01-15 | 2006-11-27 | 샤프 가부시키가이샤 | 표시 소자 및 표시 장치, 및 표시 소자의 제조 방법 |
| JP4027941B2 (ja) | 2004-01-16 | 2007-12-26 | シャープ株式会社 | 表示素子および表示装置 |
| US7576829B2 (en) | 2004-03-19 | 2009-08-18 | Japan Science And Technology Agency | Liquid crystal display device |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP4476137B2 (ja) | 2005-02-28 | 2010-06-09 | セイコーエプソン株式会社 | 液晶装置および電子機器 |
| JP2006330470A (ja) * | 2005-05-27 | 2006-12-07 | Sharp Corp | 液晶表示装置及びその製造方法 |
| JP2007025148A (ja) * | 2005-07-14 | 2007-02-01 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| JP4560502B2 (ja) | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
| KR20070047569A (ko) | 2005-11-02 | 2007-05-07 | 삼성전자주식회사 | 실란트 디스펜싱 장치와 이를 이용하여 제작된 액정 표시패널 및 제조 방법 |
| JP2007171938A (ja) * | 2005-11-24 | 2007-07-05 | Seiko Epson Corp | 液晶装置、電子機器 |
| EP1793266B1 (en) | 2005-12-05 | 2017-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration |
| JP5019848B2 (ja) | 2006-10-31 | 2012-09-05 | ソニーモバイルディスプレイ株式会社 | 液晶装置及び電子機器 |
| JP5258277B2 (ja) | 2006-12-26 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US7728948B2 (en) | 2007-04-26 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method |
| KR20090063761A (ko) | 2007-12-14 | 2009-06-18 | 삼성전자주식회사 | 표시 장치 |
| KR20090092939A (ko) * | 2008-02-28 | 2009-09-02 | 삼성전자주식회사 | 표시 장치 및 그 제조 방법 |
| CN101576669B (zh) | 2008-05-07 | 2011-02-16 | 群康科技(深圳)有限公司 | 液晶显示装置 |
| JP5420989B2 (ja) | 2008-06-25 | 2014-02-19 | 富士フイルム株式会社 | 液晶表示装置 |
| CN101650496A (zh) | 2008-08-14 | 2010-02-17 | 北京京东方光电科技有限公司 | 封框胶涂布方法、装置和液晶显示面板 |
| JP4600547B2 (ja) | 2008-08-27 | 2010-12-15 | ソニー株式会社 | 液晶表示装置 |
| KR101499242B1 (ko) * | 2008-08-29 | 2015-03-06 | 삼성디스플레이 주식회사 | 액정 표시 장치의 제조 방법 |
| US20100165280A1 (en) | 2008-12-25 | 2010-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US8395740B2 (en) | 2009-01-30 | 2013-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having blue phase liquid crystal and particular electrode arrangement |
| KR101662998B1 (ko) | 2009-03-26 | 2016-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 액정 표시 장치의 제작 방법 |
| WO2010137537A1 (en) | 2009-05-29 | 2010-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| KR101755597B1 (ko) | 2009-05-29 | 2017-07-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 제작 방법 |
| US8355109B2 (en) | 2009-11-24 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device comprising a liquid crystal material exhibiting a blue phase and a structure body projecting into the liquid crystal layer |
| CN102640041A (zh) | 2009-11-27 | 2012-08-15 | 株式会社半导体能源研究所 | 液晶显示装置 |
| KR101840623B1 (ko) | 2009-12-04 | 2018-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이를 포함하는 전자 기기 |
-
2011
- 2011-05-10 US US13/104,221 patent/US8928846B2/en not_active Expired - Fee Related
- 2011-05-12 TW TW100116673A patent/TWI522708B/zh not_active IP Right Cessation
- 2011-05-17 KR KR1020110046267A patent/KR20110128238A/ko not_active Ceased
- 2011-05-17 JP JP2011110327A patent/JP5808573B2/ja not_active Expired - Fee Related
- 2011-05-23 CN CN201110149453.7A patent/CN102253540B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5808573B2 (ja) | 2015-11-10 |
| KR20110128238A (ko) | 2011-11-29 |
| TW201202811A (en) | 2012-01-16 |
| CN102253540A (zh) | 2011-11-23 |
| TWI522708B (zh) | 2016-02-21 |
| US20110285929A1 (en) | 2011-11-24 |
| JP2012008542A (ja) | 2012-01-12 |
| US8928846B2 (en) | 2015-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102253540B (zh) | 液晶显示装置 | |
| CN101794047B (zh) | 液晶显示装置 | |
| CN101762913B (zh) | 液晶显示器件 | |
| KR101701420B1 (ko) | 액정표시장치 | |
| JP5987083B2 (ja) | 液晶表示装置 | |
| KR101759111B1 (ko) | 액정 표시장치 및 그 제작 방법 | |
| KR101719350B1 (ko) | 반도체 장치 및 그 제작 방법 | |
| JP6124560B2 (ja) | 液晶表示装置 | |
| CN105137690A (zh) | 液晶显示器 | |
| KR101717453B1 (ko) | 반도체 장치 및 액정 표시 장치 | |
| TWI534252B (zh) | 液晶組成物及液晶顯示裝置 | |
| CN103160288B (zh) | 液晶组合物、液晶元件及液晶显示装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150603 |