CN102237341A - 静电放电保护元件及其制作方法 - Google Patents
静电放电保护元件及其制作方法 Download PDFInfo
- Publication number
- CN102237341A CN102237341A CN2010101608783A CN201010160878A CN102237341A CN 102237341 A CN102237341 A CN 102237341A CN 2010101608783 A CN2010101608783 A CN 2010101608783A CN 201010160878 A CN201010160878 A CN 201010160878A CN 102237341 A CN102237341 A CN 102237341A
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- doped region
- static discharge
- drain electrode
- electrically connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010160878 CN102237341B (zh) | 2010-04-29 | 2010-04-29 | 静电放电保护元件及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201010160878 CN102237341B (zh) | 2010-04-29 | 2010-04-29 | 静电放电保护元件及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN102237341A true CN102237341A (zh) | 2011-11-09 |
CN102237341B CN102237341B (zh) | 2013-06-05 |
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CN 201010160878 Expired - Fee Related CN102237341B (zh) | 2010-04-29 | 2010-04-29 | 静电放电保护元件及其制作方法 |
Country Status (1)
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CN (1) | CN102237341B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102779819A (zh) * | 2012-08-17 | 2012-11-14 | 中国电子科技集团公司第五十八研究所 | 一种基于部分耗尽型soi工艺的esd保护结构 |
CN105990319A (zh) * | 2014-12-30 | 2016-10-05 | 杰力科技股份有限公司 | 功率开关元件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020105368A1 (en) * | 2000-08-02 | 2002-08-08 | Yasuyuki Morishita | Semiconductor device |
CN101283452A (zh) * | 2005-10-06 | 2008-10-08 | Nxp股份有限公司 | 静电放电保护器件 |
CN201174588Y (zh) * | 2008-03-28 | 2008-12-31 | 普诚科技股份有限公司 | 静电放电电路 |
CN101494377A (zh) * | 2008-01-24 | 2009-07-29 | 普诚科技股份有限公司 | 包含栅极电压提升的静电放电防护电路 |
-
2010
- 2010-04-29 CN CN 201010160878 patent/CN102237341B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020105368A1 (en) * | 2000-08-02 | 2002-08-08 | Yasuyuki Morishita | Semiconductor device |
CN101283452A (zh) * | 2005-10-06 | 2008-10-08 | Nxp股份有限公司 | 静电放电保护器件 |
CN101494377A (zh) * | 2008-01-24 | 2009-07-29 | 普诚科技股份有限公司 | 包含栅极电压提升的静电放电防护电路 |
CN201174588Y (zh) * | 2008-03-28 | 2008-12-31 | 普诚科技股份有限公司 | 静电放电电路 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102779819A (zh) * | 2012-08-17 | 2012-11-14 | 中国电子科技集团公司第五十八研究所 | 一种基于部分耗尽型soi工艺的esd保护结构 |
CN102779819B (zh) * | 2012-08-17 | 2014-12-03 | 中国电子科技集团公司第五十八研究所 | 一种基于部分耗尽型soi工艺的esd保护结构 |
CN105990319A (zh) * | 2014-12-30 | 2016-10-05 | 杰力科技股份有限公司 | 功率开关元件 |
CN105990319B (zh) * | 2014-12-30 | 2018-10-19 | 杰力科技股份有限公司 | 功率开关元件 |
Also Published As
Publication number | Publication date |
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CN102237341B (zh) | 2013-06-05 |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20111109 Assignee: PRINCETON TECHNOLOGY (SHENZHEN) CO.,LTD. Assignor: PRINCETON TECHNOLOGY CORP. Contract record no.: 2013990000901 Denomination of invention: Vertical mosfet electrostatic discharge device Granted publication date: 20130605 License type: Exclusive License Record date: 20131231 |
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LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20111109 Assignee: PRINCETON TECHNOLOGY (SHENZHEN) CO.,LTD. Assignor: PRINCETON TECHNOLOGY CORP. Contract record no.: 2013990000901 Denomination of invention: Vertical mosfet electrostatic discharge device Granted publication date: 20130605 License type: Exclusive License Record date: 20131231 |
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LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130605 |
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CF01 | Termination of patent right due to non-payment of annual fee |