CN102231419B - LED construction method and the LED matrix utilizing the method structure to fill - Google Patents
LED construction method and the LED matrix utilizing the method structure to fill Download PDFInfo
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- CN102231419B CN102231419B CN201110176713.XA CN201110176713A CN102231419B CN 102231419 B CN102231419 B CN 102231419B CN 201110176713 A CN201110176713 A CN 201110176713A CN 102231419 B CN102231419 B CN 102231419B
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Abstract
The present invention relates to a kind of LED construction method, it comprises the steps: (1) is implanted in LED chip in overlay film synthesis of silica-base matter, and draws positive and negative the two poles of the earth from the bottom of LED chip; (2) metallic carrier adopts salient point/face printed panel pattern, protrudes positive and negative electrode region; (3) the overlay film synthesis of silica-base matter being implanted with LED chip of step (1) is placed on the metallic carrier of step (2), and makes the positive and negative electrode of LED chip relative with the territory, negative, positive polar region of the protrusion of metallic carrier respectively; The both positive and negative polarity of LED chip and the both positive and negative polarity region of the protrusion of metallic carrier adopt silver to starch bonding method to carry out polarity and be connected; (4) the luminous site place of described LED chip and described in the corresponding region be implanted with between the overlay film synthesis of silica-base matter of LED chip and described metallic carrier be covered with the silicone rubber cover of cup-shaped, the inwall of silicone rubber cover applies fluorescent material; Other parts between overlay film synthesis of silica-base matter and metallic carrier adopt resin-encapsulated.The present invention also relates to the LED matrix corresponding to above-mentioned construction method simultaneously.
Description
Technical field
The invention belongs to LED technology field, the LED matrix relating to a kind of LED construction method and utilize the method structure to fill, is particularly useful for superminiature LED.
Background technology
The LED component of prior art is planted on a sapphire substrate by LED chip, and Sapphire Substrate is fixed on substrate again, and the two poles of the earth of LED chip are drawn from the upper side, and LED chip realizes polarity with the two poles of the earth of substrate by spun gold by these the two poles of the earth up and is connected.
There is following shortcoming in prior art:
1, the Sapphire Substrate heat conductivility of chip is poor, thus affects luminous efficiency and the life-span of LED;
2, because LED chip and substrate adopt spun gold to be connected, therefore make the thickness requirement of LED must higher than certain standard thickness, this be unfavorable for that LED scale is integrated;
3, because spun gold is comparatively thin, anti-extrusion, stretch-proof protection problem is difficult to resolve certainly, and therefore product work environment, preparation technology are comparatively obvious on the electrical characteristics impact of LED component.
For this reason, the LED matrix a kind of LED construction method of improvement being provided and utilizing the method structure to fill is needed.
Summary of the invention
The object of the present invention is to provide a kind of LED construction method, it can make LED thickness less, thus meets the demand for development of semiconductor product using miniature; And the method does not adopt Sapphire Substrate, thus reduce cost, facilitate structure to fill; The method can also improve luminous efficiency and production efficiency simultaneously.
For achieving the above object, the present invention adopts following technical scheme:
1, a LED construction method, is characterized in that comprising the steps:
(1) will the LED chip of Sapphire Substrate do not had to be implanted in overlay film synthesis of silica-base matter, and draw positive and negative the two poles of the earth from the bottom of described LED chip, formal dress or upside-down mounting be on metallic carrier.Described LED chip very positive and negative: from being implanted with the top of overlay film synthesis of silica-base matter of LED chip to incision, the both positive and negative polarity running through overlay film synthesis of silica-base matter is set; Or positive and negative electrode does not run through this matrix, only both positive and negative polarity is set at the back side of matrix;
(2) metallic carrier adopts salient point/face printed panel pattern, protrudes positive and negative electrode region; Described metallic carrier has several unit carry out polarity with LED chip to be respectively connected, the concrete number of described unit is corresponding with the number of the LED chip that will connect;
(3) the overlay film synthesis of silica-base matter being implanted with LED chip of step (1) is placed on the metallic carrier of step (2), and makes the positive and negative electrode of described LED chip relative with the territory, negative, positive polar region of the protrusion of metallic carrier respectively; The both positive and negative polarity of described LED chip and the both positive and negative polarity region of the protrusion of described metallic carrier adopt silver to starch bonding method to carry out polarity and be connected;
(4) being describedly implanted with between the overlay film synthesis of silica-base matter of LED chip and described metallic carrier, the luminous site place of described LED chip is covered with the silicone rubber cover of cup-shaped, and the inwall of described silicone rubber cover applies fluorescent material; Described other parts be implanted with between the overlay film synthesis of silica-base matter of LED chip and described metallic carrier adopt resin-encapsulated.
Another object of the present invention is to provide a kind of LED matrix utilizing said method structure to fill, and its thickness is less, and luminous efficiency is high; Easily manufactured, thus make production efficiency high.
For reaching this object, the present invention adopts following technical scheme:
The LED matrix utilizing above-mentioned construction method structure to fill, is characterized in that: comprise the multiple LED chip and the metallic carrier that do not have Sapphire Substrate;
Described multiple LED chip is implanted in overlay film synthesis of silica-base matter, and draws positive and negative the two poles of the earth from the bottom of described LED chip; Described LED chip very positive and negative: from being implanted with the top of overlay film synthesis of silica-base matter of LED chip to incision, the both positive and negative polarity running through overlay film synthesis of silica-base matter is set; Or positive and negative electrode does not run through this matrix, only both positive and negative polarity is set at the back side of matrix;
Described metallic carrier adopts salient point (face) printed panel pattern, protrudes positive and negative electrode region; Described metallic carrier has several unit carry out polarity with LED chip to be respectively connected, the concrete number of described unit is corresponding with the number of the LED chip that will connect; The described overlay film synthesis of silica-base matter being implanted with multiple LED chip is arranged on facing down of on described metallic carrier and the both positive and negative polarity place of described LED chip, and the positive and negative electrode of described LED chip is relative with the negative pole of the protrusion of described metallic carrier, positive pole zone respectively and starch bonding method polarity by silver and connect;
Describedly be implanted with between the overlay film synthesis of silica-base matter of LED chip and described metallic carrier, the luminous site place of described LED chip is covered with the silicone rubber cover of cup-shaped, the inwall of described silicone rubber cover applies fluorescent material; Described other parts be implanted with between the overlay film synthesis of silica-base matter of LED chip and described metallic carrier adopt resin-encapsulated.
The beneficial effect of the LED matrix of construction method of the present invention and employing the method structure dress is: owing to adopting overlay film synthesis of silica-base matter, therefore " plantation " technique of chip is relatively simple, and the problem such as LED luminous efficiency Sapphire Substrate heat conductivility can avoided poor and bring is low, the life-span is short; Wherein, the both positive and negative polarity of LED chip, from drawing bottom it, metallic carrier protrudes both positive and negative polarity region, adopts silver to starch bonding method and carry out polarity and be connected between the both positive and negative polarity of LED chip and the both positive and negative polarity region of metallic carrier, make the thickness of LED matrix less like this, be adapted to microminiaturized encapsulation; Wherein, the luminous site of LED chip is covered with silicone rubber cover, the inner side of this silicone rubber cover is coated with fluorescent material, at this moment, silicone rubber cover can serve as secondary optical lens parts, makes more effectively to produce white light or the light needed for other, illumination effect is good and cost is low, other regions simultaneously wherein between LED chip and metallic carrier adopt potting resin of the prior art to encapsulate, and this is relative to adopting the mode stirring and have the silica gel of fluorescent material to encapsulate in prior art, better effects and if save cost.
Accompanying drawing explanation
Multiple LED chip is implanted in the schematic diagram after in overlay film synthesis of silica-base matter by Fig. 1 in the present invention.
Fig. 2 is that in the present invention, LED chip and metallic carrier carry out the schematic diagram that polarity is connected.
Embodiment
The preferred embodiments of the present invention are introduced in detail below in conjunction with accompanying drawing.
Embodiment one.
A construction method of LED, it comprises the steps:
(1) multiple LED chip to be implanted in overlay film synthesis of silica-base matter (as shown in Figure 1, it is for be implanted in the schematic diagram after in overlay film synthesis of silica-base matter by multiple LED chip, label 10 is depicted as one of them LED chip), and draw positive and negative the two poles of the earth from the bottom of LED chip.The mode of drawing positive and negative the two poles of the earth from the bottom of LED chip can for any appropriate ways of the prior art, such as: from being implanted with the top of overlay film synthesis of silica-base matter of LED chip to incision, arrange the both positive and negative polarity running through overlay film synthesis of silica-base matter; Or positive and negative electrode does not run through this matrix, only both positive and negative polarity is set at the back side of matrix.
This embodiment has abandoned the method from the Base top contact both positive and negative polarity of LED chip in prior art, then draws both positive and negative polarity from the bottom of LED chip; Like this, when the connection of LED chip and metallic carrier, operation can be more convenient, and due to need not from chip top connecting lead wire, thus make lower to some extent relative to the height of structure dress device prior art, the microminiaturized encapsulation of realization is had a very important role.
Moreover this embodiment has been abandoned by the chip practice on a sapphire substrate in prior art, and is implanted in by LED chip in overlay film synthesis of silica-base matter.Like this, avoid the problems such as the poor LED luminous efficiency brought of Sapphire Substrate heat-sinking capability is low, the life-span is short on the one hand, the thickness of another invention overlay film synthesis of silica-base matter is less, be conducive to microminiaturized encapsulation, and the material of overlay film synthesis of silica-base matter does not have Sapphire Substrate so hard, the thus setting of convenient LED chip and the extraction of both positive and negative polarity.
(2) metallic carrier adopts salient point (face) printed panel pattern, to protrude positive and negative electrode region.The unit being illustrated in figure 2 metallic carrier and a LED chip carry out the schematic diagram that polarity is connected, and wherein, label 20 indicates metallic carrier, and label 21 is the negative regions that metallic carrier protrudes; Label 22 is the positive pole zone that metallic carrier protrudes.The unit that a block of metal carrier has several such, the concrete number of such unit is corresponding with the number of the LED chip that will connect.
(3) metallic carrier overlay film synthesis of silica-base matter being implanted with LED chip of step (1) being placed on step (2) makes facing down of the positive and negative electrode place of LED chip, and the positive and negative electrode of LED chip is relative with the negative pole of the protrusion of metallic carrier, positive pole zone respectively and adopt silver to starch bonding method to carry out polarity connection.As shown in Figure 2, positive pole 11 and negative pole 12 are drawn in the bottom of LED chip 10, during connection positive pole 11 and negative pole 22 place facing to below, namely in the face of metallic carrier 20, metallic carrier 20 is correspondingly provided with negative pole 21 and the positive pole 22 of protrusion; Then, LED chip 10 is placed on metallic carrier 20, and makes the positive pole 11 of LED chip 10, negative pole 12 face toward negative pole 21, the positive pole 22 of the protrusion of metallic carrier respectively; Then, by silver slurry bonding technology, both positive and negative polarity polarity is each other connected.
In this embodiment, the both positive and negative polarity of LED chip can be starched by silver with the both positive and negative polarity on metallic carrier and directly be connected, spun gold need not be used to connect, more need not connect spun gold from the top of chip is connected to metallic carrier, thus make structure fill technique more to save time, convenient operation, the height that structure simultaneously can also be made to fill device decreases, and the scale being conducive to microminiaturized structure dress and LED is integrated.Moreover the method that the connection that silver slurry bonding method realizes connects than spun gold in prior art is more reliable, anti-extrusion, tensile resistance is strong, and product work environment, the electrical characteristics impact of preparation technology on LED component are less.
(4) be implanted with between the overlay film synthesis of silica-base matter of LED chip and metallic carrier, the luminous site place of LED chip is covered with the silicone rubber cover of cup-shaped, the inwall of this silicone rubber cover applies fluorescent material; Other parts be implanted with between the overlay film synthesis of silica-base matter of LED chip and metallic carrier adopt resin-encapsulated.
In the present embodiment, adopt ultraviolet leds, silicone rubber cover applies RGB three-wavelength phosphor powder, realize like this emitting white light; Can also blue-ray LED be adopted, silicone rubber cover applies yellow fluorescent powder, thus produce white light.Certainly in other embodiment of the present invention, also can adopt the LED of other wavelength, and adopt other fluorescent material corresponding with it to be coated on silicone rubber cover to realize emitting white light.Certainly, when being not used in illumination, also as required, other kinds of LED and fluorescent material can be set accordingly.
Under this structure, the requirement sending out required light can be met, turn avoid in prior art the phenomenon utilizing fluorescent material to carry out the fluorescent material waste that cure package LED component causes; Moreover the silicone rubber cover utilizing inwall to apply fluorescent material covers luminescent device, illumination effect is better than utilizing the illumination effect stirred when having the resin of fluorescent material to encapsulate in prior art.In addition, the silicone rubber cover in the present embodiment is arranged to cup-shaped, can also play the effect of reflector, and has certain disperse function to light, thus improves illumination effect.
Embodiment two.
The LED matrix that embodiment two fills for utilizing the LED construction method structure of embodiment one; It comprises multiple LED chip and metallic carrier.
Wherein, multiple LED chip is implanted in overlay film synthesis of silica-base matter, and draws positive and negative the two poles of the earth (see Fig. 1) from the bottom of LED chip; Metallic carrier adopts salient point (face) printed panel pattern, to protrude positive and negative electrode region (see marking 20 indications in Fig. 2).The overlay film synthesis of silica-base matter being implanted with multiple LED chip is arranged on facing down of on metallic carrier and the both positive and negative polarity place of LED chip, and the negative pole of the positive and negative electrode of LED chip and the protrusion of metallic carrier, positive pole zone are relative respectively and adopt silver to starch bonding method to carry out polarity connection.Be implanted with between the overlay film synthesis of silica-base matter of LED chip and metallic carrier, the luminous site place of LED chip is covered with the silicone rubber cover of cup-shaped, the inwall of silicone rubber cover applies fluorescent material; Other parts be implanted with between the overlay film synthesis of silica-base matter of LED chip and metallic carrier adopt resin-encapsulated.
What more than disclose is only the preferred embodiments of the present invention, certainly can not be used for limiting the scope of the invention.Any equivalents for technical scheme of the present invention and replacement, all in protection scope of the present invention.
Claims (2)
1. a LED construction method, is characterized in that comprising the steps:
(1) will not adopt the LED chip of Sapphire Substrate to be implanted in overlay film synthesis of silica-base matter, and draw positive and negative the two poles of the earth from the bottom of described LED chip; Described LED chip very positive and negative: from being implanted with the top of overlay film synthesis of silica-base matter of LED chip to incision, the both positive and negative polarity running through overlay film synthesis of silica-base matter is set; Or positive and negative electrode does not run through this matrix, only both positive and negative polarity is set at the back side of matrix;
(2) metallic carrier adopts salient point/face printed panel pattern, protrudes positive and negative electrode region; Described metallic carrier has several unit carry out polarity with LED chip to be respectively connected, the concrete number of described unit is corresponding with the number of the LED chip that will connect;
(3) the overlay film synthesis of silica-base matter being implanted with LED chip of step (1) is placed on the metallic carrier of step (2), and makes the positive and negative electrode of described LED chip relative with the territory, negative, positive polar region of the protrusion of metallic carrier respectively; The both positive and negative polarity of described LED chip and the both positive and negative polarity region of the protrusion of described metallic carrier adopt silver to starch bonding method to carry out polarity and be connected;
(4) being describedly implanted with between the overlay film synthesis of silica-base matter of LED chip and described metallic carrier, the luminous site place of described LED chip is covered with the silicone rubber cover of cup-shaped, and the inwall of described silicone rubber cover applies fluorescent material; Described other parts be implanted with between the overlay film synthesis of silica-base matter of LED chip and described metallic carrier adopt resin-encapsulated.
2. the LED matrix utilizing the construction method structure of claim 1 to fill, is characterized in that: comprise the multiple LED chip and the metallic carrier that do not adopt Sapphire Substrate;
Described multiple LED chip is implanted in overlay film synthesis of silica-base matter, and draws positive and negative the two poles of the earth from the bottom of described LED chip;
Described LED chip very positive and negative: from being implanted with the top of overlay film synthesis of silica-base matter of LED chip to incision, the both positive and negative polarity running through overlay film synthesis of silica-base matter is set; Or positive and negative electrode does not run through this matrix, only both positive and negative polarity is set at the back side of matrix;
Described metallic carrier adopts salient point (face) printed panel pattern, protrudes positive and negative electrode region; Described metallic carrier has several unit carry out polarity with LED chip to be respectively connected, the concrete number of described unit is corresponding with the number of the LED chip that will connect;
The described overlay film synthesis of silica-base matter being implanted with multiple LED chip is arranged on facing down of on described metallic carrier and the both positive and negative polarity place of described LED chip, and the positive and negative electrode of described LED chip is relative with the negative pole of the protrusion of described metallic carrier, positive pole zone respectively and starch bonding method polarity by silver and connect;
Describedly be implanted with between the overlay film synthesis of silica-base matter of LED chip and described metallic carrier, the luminous site place of described LED chip is covered with the silicone rubber cover of cup-shaped, the inwall of described silicone rubber cover applies fluorescent material; Described other parts be implanted with between the overlay film synthesis of silica-base matter of LED chip and described metallic carrier adopt resin-encapsulated.
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| CN201110176713.XA CN102231419B (en) | 2011-06-28 | 2011-06-28 | LED construction method and the LED matrix utilizing the method structure to fill |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859857A (en) * | 2010-03-04 | 2010-10-13 | 广州市海林电子科技发展有限公司 | LED device |
| CN102047451A (en) * | 2008-04-30 | 2011-05-04 | 莱登照明詹纳斯多夫股份公司 | LED element with a thin-layer semiconductor element made of gallium nitride |
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| TWI372478B (en) * | 2008-01-08 | 2012-09-11 | Epistar Corp | Light-emitting device |
| CN101532612A (en) * | 2009-03-10 | 2009-09-16 | 广州南科集成电子有限公司 | Method for manufacturing integrated LED chip light source |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102047451A (en) * | 2008-04-30 | 2011-05-04 | 莱登照明詹纳斯多夫股份公司 | LED element with a thin-layer semiconductor element made of gallium nitride |
| CN101859857A (en) * | 2010-03-04 | 2010-10-13 | 广州市海林电子科技发展有限公司 | LED device |
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Denomination of invention: LED (light-emitting diode) packaging method and LED device packaged by using same Effective date of registration: 20180724 Granted publication date: 20160113 Pledgee: China Co truction Bank Corp Guangzhou Yuexiu branch Pledgor: Guangzhou Hailin Electronic Technology Co., Ltd. Registration number: 2018440000214 |
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Denomination of invention: Led construction method and LED device constructed by the method Effective date of registration: 20200819 Granted publication date: 20160113 Pledgee: China Co. truction Bank Corp Guangzhou Yuexiu branch Pledgor: GUANGZHOU HAILIN ELECTRONIC TECHNOLOGY Co.,Ltd. Registration number: Y2020980005156 |
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