CN102225598A - Solar silicon wafer wire cutting guide roller and manufacturing method and special film coating machine and electroplating machine - Google Patents
Solar silicon wafer wire cutting guide roller and manufacturing method and special film coating machine and electroplating machine Download PDFInfo
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- CN102225598A CN102225598A CN2011101125797A CN201110112579A CN102225598A CN 102225598 A CN102225598 A CN 102225598A CN 2011101125797 A CN2011101125797 A CN 2011101125797A CN 201110112579 A CN201110112579 A CN 201110112579A CN 102225598 A CN102225598 A CN 102225598A
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- 238000009713 electroplating Methods 0.000 title claims abstract description 60
- 238000005520 cutting process Methods 0.000 title claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 239000007888 film coating Substances 0.000 title abstract 2
- 238000009501 film coating Methods 0.000 title abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 112
- 239000002131 composite material Substances 0.000 claims abstract description 57
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 56
- 239000002245 particle Substances 0.000 claims abstract description 33
- 239000002905 metal composite material Substances 0.000 claims abstract description 25
- 238000007747 plating Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- 229920002635 polyurethane Polymers 0.000 claims abstract description 14
- 239000004814 polyurethane Substances 0.000 claims abstract description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010936 titanium Substances 0.000 claims abstract description 12
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 10
- 239000011651 chromium Substances 0.000 claims abstract description 10
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims description 90
- 239000007788 liquid Substances 0.000 claims description 48
- 235000012431 wafers Nutrition 0.000 claims description 33
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 239000010432 diamond Substances 0.000 claims description 12
- 229920006361 Polyflon Polymers 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 238000006263 metalation reaction Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 5
- 239000002352 surface water Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 235000011194 food seasoning agent Nutrition 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- 238000009461 vacuum packaging Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 229910000831 Steel Inorganic materials 0.000 description 9
- 239000010959 steel Substances 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 239000004570 mortar (masonry) Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physical Vapour Deposition (AREA)
- Electroplating Methods And Accessories (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a solar silicon wafer wire cutting guide roller and a manufacturing method and a special film coating machine and an electroplating machine. the method comprises the following steps of: making a V-shaped guide roller base body made from composite polyurethane, plating a metal composite layer on the surface of the V-shaped guide roller base body, and plating a wear-resistant composite layer on the surface of the metal composite layer,wherein the metal composite layer is compounded by one or more then one of nickel, titanium, copper and chromium, the wear-resistant composite layer is a antiseize polymer in which wear-resistant particles are contained. According to the invention, under the condition of not changing the existing cutting technique, the service life of the V-shaped guide roller manufactured by the invention is prolonged, the replacement frequency can be reduced, the cutting yield is stabilized, the equipment utilization ratio is improved, and the overall cutting cost is lowered.
Description
Technical field
The present invention relates to solar power silicon sheet cutting equipment technical field, especially a kind of solar silicon wafers line cutting deflector roll and preparation method and special-purpose coating machine and electroplating machine.
Background technology
The development in nearly 5 years of China's photovoltaic generation industry is swift and violent, solar power silicon sheet cutting equipment input is in recent years with tens times put into operation, wherein cutting is with steel wire winding displacement V-type Wire guide roller, with the section board expand production and consume in a large number, wherein the surface abrasion of V-type Wire guide roller and antiwear characteristic directly influence section quality and usage ratio of equipment and comprehensive line and are cut into originally.
In solar silicon wafers line cutting process, whole mechanism is to utilize the rigid characteristic of silicon-carbide particle and sharp water caltrop that silicon rod is blocked, during cutting the cutting steel wire on V-type steel wire deflector roll equally spaced, winding displacement drives the steel wire surface of mortar in high-speed motion equably, the silicon-carbide particles that make of uniform and stable cut the silicon rod surface, Wire guide roller is a CCP of control slice thickness. guide roller surface is is also worn and torn by the carborundum in the high-speed motion simultaneously indirectly in cutting process, and the V-type separation changes and influences line and cut quality.
Development along with whole solar energy industry, a large amount of composite polyurethane elastomer deflector rolls that use in the cutting of solar silicon wafers line, because its surperficial wearability is influenced by polymeric material structure, cycle actual life has been caused section quality instability between 150-200 hour.Changing deflector roll in process of production is a very complicated job; needing professional operating personnel to spend 5-8 hour just can finish changing; mean that also enterprise need shut down 5-8 hour; cause the waste of other board device resources; also needing to clean other after finishing changing establishes; carry out the surface and repair the increase entreprise cost again; increase labor strength, whole industry are being how to improve V-type steel wire guide roller surface wearability and improve service life and the new approach of manufacture craft searching of raising board utilization rate, reduction cutting cost and don't the existing cutting of change deflector roll all.
Summary of the invention
The technical problem to be solved in the present invention is: in order to solve above-mentioned deficiency of the prior art, it is wear-resistant composite bed to the invention provides a kind of solar silicon wafers line cutting deflector roll plating one deck on the V-type deflector roll matrix that existing composite polyurethane is made, promote the antiwear characteristic between V-type deflector roll matrix surface and the mortar steel wire, increase the service life of V-type deflector roll matrix, reduce to change number of times, stable section yield and reducing production costs.
The invention provides a kind of solar silicon wafers line cutting deflector roll preparation method and be implemented in V-type deflector roll matrix surface and plate wear-resistant composite bedly, before the plating wearing layer, must make the metallization of composite polyurethane matrix surface.
The invention provides a kind of special-purpose coating machine, adopt magnetron sputtering technique to realize composite polyurethane matrix surface metalized.
The invention provides a kind of special-purpose electroplating machine, adopt electroplating technology to realize wear-resistant composite bed plating.
The technical solution adopted for the present invention to solve the technical problems is: a kind of solar silicon wafers line cutting deflector roll, has the V-type deflector roll matrix that composite polyurethane is made, be coated with metal composite layer on the V-type deflector roll matrix surface, be coated with wear-resistant composite bed at the metal composite laminar surface, described metal composite layer is the metal composite layer of one or more compositions in nickel, titanium, copper and the chromium, described wear-resistant composite bed be antiseized condensate, wear-resisting particulate is arranged in the antiseized condensate.
The thickness of described metal composite layer is 0.10um-0.38um.
Described antiseized condensate in wear-resistant composite bed is a polyflon.
Carborundum and/or diamond particle that described wear-resisting particulate is particle diameter 0.2um-2.0um, described wear-resistant composite bed thickness is 2um-15um.
A kind of preparation method of making solar silicon wafers line cutting deflector roll has following steps:
(a) make the V-type deflector roll matrix that the V-type groove is with on the surface;
(b) particulate and the stain of removal V-type deflector roll matrix surface;
(c) remove V-type deflector roll matrix surface water mark;
(d) V-type deflector roll matrix surface is carried out Ar/N
2/ O
2The little processing of ion surface;
(e) the plating composite bed is carried out on the surface of finishing the V-type deflector roll matrix after surperficial little processing in the step (d), use magnetron sputtering technique to make the composite polyurethane surface metalation;
(f) carry out drying after plating V-type deflector roll matrix cooling cooling behind the metal composite layer, for future use;
(g) dried V-type deflector roll matrix is electroplated wear-resistant composite bedly, and V-type deflector roll matrix is placed in the electroplating bath, and the electroplate liquid in the electroplating bath is for containing wear-resisting particulate and antiseized polymeric higher suspension electroplate liquid;
(h) will finish the V-type deflector roll matrix of electroplating after wear-resistant composite bed 1 and carry out water and clean, and clean and carry out high speed after finishing and rotate and use hot-air seasoning;
(i) finish the shipment of V-type deflector roll matrix check final vacuum packing.
The metallic target that adopts in the described magnetron sputtering technique of step (e) is one or more combinations in nickel, titanium, copper and the chromium, and the thickness of coating of metal composite layer is 0.10um-0.38um.
The described antiseized condensate of step (g) is a polyflon, the carborundum of wear-resisting diameter of particle 0.2um-2.0um and/or diamond particle, and wear-resistant composite bed thickness of coating is 2um-15um.
A kind of special-purpose coating machine of producing solar silicon wafers line cutting deflector roll, be used for the V-type deflector roll matrix surface metallization that composite polyurethane is made, comprise vacuum chamber and vacuumize unit, the deflector roll that is provided with a pair of installation V-type deflector roll matrix in the vacuum chamber is from revolving round the sun frame, deflector roll is the corresponding anchor clamps that at least one group of installation V-type deflector roll matrix is set on the frame that revolves round the sun, be equipped with in the vacuum chamber at least one magnetic control target position and with the metal target position of the corresponding setting of magnetic control target position, vacuum chamber is provided with the magnetic control power cabinet of control magnetic control target position work outward.
For increasing work efficiency, described deflector roll is provided with four groups of anchor clamps that V-type deflector roll matrix is installed from the frame that revolves round the sun, and can process 1 to 4 group of V-type deflector roll simultaneously, and operating efficiency is higher.
For realizing the magnetron sputtering of four kinds of metals, described magnetic control target bit quantity is four, four magnetic control target position evenly be centered around deflector roll from the frame that revolves round the sun circumferentially, the metal of one or more combinations in the configurable nickel target of metal target position, titanium target, copper target, the chromium target can dispose different metallic combinations by arts demand.
A kind of special-purpose electroplating machine of producing solar silicon wafers line cutting deflector roll, be used for electroplating wear-resistant composite bed at the V-type deflector roll matrix surface of surface metalation, comprise electroplating bath, electroplating power supply, be arranged on the nickel electrode in the electroplating bath, support the electrode suppor and the electroplate liquid circulating pump of nickel electrode, nickel electrode has the cavity that V-type deflector roll matrix is installed, the two ends of nickel electrode are provided with to be supported V-type deflector roll matrix and drives the deflector roll support that V-type deflector roll matrix rotates, has separation net in the cavity between nickel electrode and the V-type deflector roll matrix, has electroplate liquid in the described electroplating bath, the two ends of nickel electrode are respectively the inlet and the liquid outlet of electroplate liquid, liquid outlet is communicated with electroplating bath, inlet is communicated with formation electroplate liquid closed circuit with electroplating bath by the electroplate liquid circulating pump, the positive pole of described electroplating power supply is electrically connected with V-type deflector roll matrix, and the negative pole of electroplating power supply is electrically connected with nickel electrode.
Preferred electroplate liquid, described electroplate liquid is the compound nickel plating solution of nickel, contains carborundum and/or diamond particle and polyflon in the electroplate liquid.
For realizing not shutting down automatic interpolation particulate; enhance productivity and realize the uniformity consistency of coating; the particulate adding set that also has in the control nickel electrode carborundum in the electroplate liquid and/or diamond particle concentration; described particulate adding set comprises particulate reservoir and the controller of fraction of particle detection in real time; described particulate reservoir is communicated with the cavity of nickel electrode, described real-time fraction of particle survey that controller is arranged in the electroplate liquid in the nickel electrode cavity and with particulate reservoir control connection.
For monitoring the quality of electroplate liquid in real time, described electroplating bath is provided with pH meter and the thermometer of measuring electroplate liquid.
The invention has the beneficial effects as follows, a kind of solar silicon wafers line cutting deflector roll of the present invention and preparation method and special-purpose coating machine and electroplating machine, adopt the Vacuum Coating method and the composite electroplated wearing layer method of magnetron sputtering to make wearing layer at V-type deflector roll matrix surface, the V-type deflector roll matrix of making is not changing under the existing cutting technique condition, improves the service life and the minimizing of V-type deflector roll matrix and changes number of times, stable section yield and improve utilization rate of equipment and installations, reduction cutting integrated cost.The antiwear characteristic that uses the wear-resistant composite bed of different structural materials and axially do not wait thickness coating to promote between V-type deflector roll matrix surface and the mortar steel wire mates the service life that increases V-type deflector roll matrix, adopt axial not equal thickness coating can fall of the wearing and tearing of end steel wire effectively at V-type deflector roll matrix leading-out terminal, and can improve silicon chip TTV, reduce the generation of stria.
Obtained contain particulate wear-resistant composite bed mortar had viscosity easy cleaning characteristics not, can help the operator easily to observe damage wear-resistant composite bed behind each cutter and destroyed area situation in time prevent the to cut into slices fluctuation tendency and the wear-resisting effect of quality.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the structural scheme of mechanism and the partial enlarged drawing thereof of solar silicon wafers line cutting deflector roll most preferred embodiment of the present invention;
Fig. 2 is the schematic flow sheet of the preparation method of solar silicon wafers line cutting deflector roll of the present invention;
Fig. 3 is the semi-transparent view of most preferred embodiment of the special-purpose coating machine of production solar silicon wafers line of the present invention cutting deflector roll;
Fig. 4 is the structural representation of most preferred embodiment of the special-purpose coating machine of production solar silicon wafers line of the present invention cutting deflector roll;
Fig. 5 is the structural representation of most preferred embodiment of the special-purpose electroplating machine of production solar silicon wafers line of the present invention cutting deflector roll.
Among the figure: 1.V type deflector roll matrix, the 1-1. metal composite layer, 1-2. is wear-resistant composite bed, 2. vacuum chamber, 21. magnetic control target position, 22. metal target position, 23. the magnetic control power cabinet 3. vacuumizes unit, 4. deflector roll is from revolving round the sun frame, 41. anchor clamps, 5. electroplating bath, 51. nickel electrodes, 51-1. separation net, 51-2. inlet, 51-3. liquid outlet, 52. electrode suppor, 53. electroplate liquid circulating pump, 6. electroplating power supplies.
The specific embodiment
In conjunction with the accompanying drawings, the present invention is further detailed explanation.These accompanying drawings are the schematic diagram of simplification, basic structure of the present invention only is described in a schematic way, so it only show the formation relevant with the present invention.
The most preferred embodiment of solar silicon wafers line cutting deflector roll of the present invention as shown in Figure 1, has the V-type deflector roll matrix 1 that composite polyurethane is made, V-type deflector roll matrix is coated with metal composite layer 1-1 on 1 surface, be coated with wear-resistant composite bed 1-2 on metal composite layer 1-1 surface, metal composite layer 1-1 is the metal composite layer of one or more compositions in nickel, titanium, copper and the chromium, wear-resistant composite bed 1-2 is antiseized condensate, and mixing in the antiseized condensate has wear-resisting particulate.The thickness of metal composite layer 1-1 is 0.10um-0.38um.Antiseized condensate among the wear-resistant composite bed 1-1 is a polyflon, and wear-resisting particulate is carborundum and/or the diamond particle of particle diameter 0.2um-2.0um, and the thickness among the wear-resistant composite bed 1-2 is 2um-15um.
The schematic flow sheet of the preparation method of making solar silicon wafers line cutting deflector roll of the present invention as shown in Figure 2 has following steps:
(a) make the V-type deflector roll matrix 1 that the V-type groove is with on the surface;
(b) particulate and the stain on removal V-type deflector roll matrix 1 surface;
(c) remove V-type deflector roll matrix 1 surface water mark;
(d) Ar/N is carried out on V-type deflector roll matrix 1 surface
2/ O
2The little processing of ion surface;
(e) plating composite bed 1-1 is carried out on the surface of finishing the V-type deflector roll matrix 1 after surperficial little processing in the step (d), use magnetron sputtering technique to make the composite polyurethane surface metalation;
(f) carry out drying after plating V-type deflector roll matrix 1 cooling cooling behind the metal composite layer 1-1, for future use;
(g) dried V-type deflector roll matrix 1 is electroplated wear-resistant composite bed 1-2, and V-type deflector roll matrix 1 is placed in the electroplating bath, and the electroplate liquid in the electroplating bath is for containing wear-resisting particulate and antiseized polymeric higher suspension electroplate liquid;
(h) will finish the V-type deflector roll matrix of electroplating behind the wear-resistant composite bed 1-2 1 and carry out water and clean, and clean and carry out high speed after finishing and rotate and use hot-air seasoning;
(i) finish the 1 check final vacuum packing shipment of V-type deflector roll matrix.
The metallic target that adopts in the described magnetron sputtering technique of step (e) is one or more combinations in nickel, titanium, copper and the chromium, and the thickness of coating of metal composite layer 1-1 is 0.10um-0.38um.
The described antiseized condensate of step (g) is a polyflon, the carborundum of wear-resisting diameter of particle 0.2um-2.0um and/or diamond particle, and the thickness of coating of wear-resistant composite bed 1-2 is 2um-15um.
Cut the most preferred embodiment of the special-purpose coating machine of deflector roll as Fig. 3 production solar silicon wafers line of the present invention shown in Figure 4, be used for V-type deflector roll matrix 1 surface metalation that composite polyurethane is made, comprise vacuum chamber 2 and vacuumize unit 3, the deflector roll that is provided with a pair of installation V-type deflector roll matrix 1 in the vacuum chamber 2 is from revolving round the sun frame 4, deflector roll is the corresponding anchor clamps 41 that four groups of installation V-type deflector roll matrixes 1 are set on the frame 4 that revolves round the sun, be equipped with in the vacuum chamber 2 four magnetic control target position 21 and with the metal target position 22 of magnetic control target position 21 corresponding settings, the vacuum chamber 2 outer magnetic control power cabinets 23 that are provided with 21 work of control magnetic control target position.
Magnetic control target position 21 quantity are four, four magnetic control target position 21 evenly be centered around deflector roll from the frame 4 that revolves round the sun circumferentially, the metal of one or more combinations in metal target position 22 configurable nickel targets, titanium target, copper target, the chromium target.
The most preferred embodiment of the special-purpose electroplating machine of production solar silicon wafers line cutting deflector roll of the present invention as shown in Figure 5, be used at the wear-resistant composite bed 1-2 of V-type deflector roll matrix 1 electroplating surface of surface metalation, comprise electroplating bath 5, electroplating power supply 6, be arranged on the nickel electrode 51 in the electroplating bath 5, support the electrode suppor 52 and the electroplate liquid circulating pump 53 of nickel electrode 51, nickel electrode 51 has the cavity that V-type deflector roll matrix 1 is installed, the two ends of nickel electrode 51 are provided with to be supported V-type deflector roll matrix 1 and drives the deflector roll support 54 that V-type deflector roll matrix 1 rotates, has separation net 51-1 in the cavity between nickel electrode 51 and the V-type deflector roll matrix 1, has electroplate liquid in the electroplating bath 5, the two ends of nickel electrode 51 are respectively the inlet 51-2 and the liquid outlet 51-3 of electroplate liquid, liquid outlet 51-3 is communicated with electroplating bath 5, inlet 51-2 is communicated with formation electroplate liquid closed circuit with electroplating bath 5 by electroplate liquid circulating pump 53, the positive pole of electroplating power supply 6 is electrically connected with V-type deflector roll matrix 1, and the negative pole of electroplating power supply 6 is electrically connected with nickel electrode 51.The particulate adding set that also has in the control nickel electrode 51 carborundum in the electroplate liquids and/or diamond particle concentration, the particulate adding set comprises particulate reservoir and the controller of fraction of particle detection in real time, the particulate reservoir is communicated with the cavity of nickel electrode 51, in real time fraction of particle survey that controller is arranged in the electroplate liquid in nickel electrode 51 cavitys and with particulate reservoir control connection.Electroplating bath 5 is provided with pH meter 7 and the thermometer 8 of measuring electroplate liquid.
Electroplate liquid is the compound nickel plating solution of nickel, contains carborundum and/or diamond particle and polyflon in the electroplate liquid.
Below contain the wear-resistant composite bed 1-2 of silicon-carbide particles of particle diameter D50=1.0um and the complex metal layer 1-1 of composite polyurethane V-type deflector roll matrix 1 surface metalation thickness 0.15um magnetron sputtering 98% nickel and 2% titanium by processing NTC442V type deflector roll matrix 1 surface plating 4um thickness, specifically set forth whole operating process of the present invention:
The first step, prepare V-type deflector roll matrix 1: get 1 to 4 of the deflector roll that NTC442 has finished out the V-type groove, use supersonic wave cleaning machine to remove the particulate and the stain point on V-type deflector roll matrix 1 surface; Use the cryogenic vacuum dryer to remove V-type deflector roll matrix 1 surface water mark point.
Second step, vacuum coating: V-type deflector roll matrix 1 is loaded into deflector roll in the special-purpose coating machine from revolving round the sun on the frame 4, disposes the target on four metal target position 22: get three nickel metallic targets and a titanium metal target; The 1 surperficial little processing of V-type deflector roll matrix, the plasma purge gas is 80% argon gas+20% oxygen, the base vacuum degree need reach 2.0x10-3Pa; By magnetron sputtering technique V-type deflector roll matrix 1 surface metalation coating film thickness is between the 0.150um-0.160um, and whole metallization processes is controlled by automated procedures, and all finishing needs 3 hours consuming time.
The 3rd step, electroplate wearing layer: with one the V-type deflector roll matrix 1 of surface metalation be installed in the cavity of the nickel electrode 51 in the special-purpose electroplating machine, V-type deflector roll matrix 1 is installed on the deflector roll support 54, deflector roll support 54 can drive V-type deflector roll matrix 1 and rotate (rotating speed is from 0-15rpm), get 500kg nickel composite plating solution and regulate pH value and temperature, from electroplating bath 5, be driven into the nickel composite plating solution in the nickel electrode 51 and electroplate liquid be full of and begin with electroplate liquid circulating pump 53 and reflux, and guarantee that new nickel composite plating enters into the nickel electrode 51 inner closed circuits that form, V-type deflector roll matrix 1 surface is connected electroplating power supply 6, the silicon-carbide particles and the particle diameter that add 500g particle diameter D50=1um in nickel electrode 51 are the polyflon of 80nm, when V-type deflector roll matrix 1 is electroplated the wear-resistant composite bed thickness 4um that becomes to contain 96% silicon-carbide particles and 4% polyflon, electroplate liquid pH value: 3.2, temperature of electroplating solution: 45 ℃, electroplating time: 20 minutes, clear water washing time 5 minutes, air-dry time 2 minutes.
Can make the solar silicon wafers line cutting deflector roll that wearing layer thickness is 4um by above-mentioned three big steps, alternative conventional steel wire deflector roll uses and does not change the technology of original wire cutting machine, deflector roll can increase 30%-40%, minimizing deflector roll replacing number of times service life, save manpower, improve utilization rate of equipment and installations, reduce production costs.
Claims (14)
1. a solar silicon wafers line cuts deflector roll, has the V-type deflector roll matrix (1) that composite polyurethane is made, it is characterized in that: V-type deflector roll matrix (1) is coated with metal composite layer (1-1) on the surface, be coated with wear-resistant composite bed (1-2) on metal composite layer (1-1) surface, described metal composite layer (1-1) is the metal composite layer of one or more compositions in nickel, titanium, copper and the chromium, described wear-resistant composite bed (1-2) is antiseized condensate, and wear-resisting particulate is arranged in the antiseized condensate.
2. solar silicon wafers line cutting deflector roll as claimed in claim 1, it is characterized in that: the thickness of described metal composite layer (1-1) is 0.10um-0.38um.
3. solar silicon wafers line cutting deflector roll as claimed in claim 1, it is characterized in that: the antiseized condensate in described wear-resistant composite bed (1-1) is a polyflon.
4. solar silicon wafers line cutting deflector roll as claimed in claim 1, it is characterized in that: carborundum and/or diamond particle that described wear-resisting particulate is particle diameter 0.2um-2.0um, the thickness of described wear-resistant composite bed (1-2) are 2um-15um.
5. the preparation method of the described solar silicon wafers line cutting of making such as claim 1～4 deflector roll is characterized in that having following steps:
(a) make the V-type deflector roll matrix (1) that the V-type groove is with on the surface;
(b) remove V-type deflector roll matrix (1) surperficial particulate and stain;
(c) remove V-type deflector roll matrix (1) surface water mark;
(d) Ar/N is carried out on V-type deflector roll matrix (1) surface
2/ O
2The little processing of ion surface;
(e) plating composite bed (1-1) is carried out on the surface of finishing the V-type deflector roll matrix (1) after surperficial little processing in the step (d), use magnetron sputtering technique to make the composite polyurethane surface metalation;
(f) carry out drying after plating V-type deflector roll matrix (1) cooling cooling behind the metal composite layer (1-1), for future use;
(g) dried V-type deflector roll matrix (1) is electroplated wear-resistant composite bed (1-2), and V-type deflector roll matrix (1) is placed in the electroplating bath, and the electroplate liquid in the electroplating bath is for containing wear-resisting particulate and antiseized polymeric higher suspension electroplate liquid;
(h) will finish the V-type deflector roll matrix of electroplating after wear-resistant composite bed (1-2) (1) and carry out water and clean, and clean and carry out high speed after finishing and rotate and use hot-air seasoning;
(i) finish the shipment of V-type deflector roll matrix (1) check final vacuum packing.
6. the preparation method of solar silicon wafers line cutting deflector roll as claimed in claim 5, it is characterized in that: the metallic target that adopts in the described magnetron sputtering technique of step (e) is one or more combinations in nickel, titanium, copper and the chromium, and the thickness of coating of metal composite layer (1-1) is 0.10um-0.38um.
7. the preparation method of solar silicon wafers line cutting deflector roll as claimed in claim 5, it is characterized in that: the described antiseized condensate of step (g) is a polyflon, the carborundum of wear-resisting diameter of particle 0.2um-2.Oum and/or diamond particle, the thickness of coating of wear-resistant composite bed (1-2) are 2um-15um.
8. produce the special-purpose coating machine that the described solar silicon wafers line of claim 1～4 cuts deflector roll for one kind, be used for V-type deflector roll matrix (1) surface metalation that composite polyurethane is made, it is characterized in that: comprise vacuum chamber (2) and vacuumize unit (3), the deflector roll that is provided with a pair of installation V-type deflector roll matrix (1) in the vacuum chamber (2) is from revolving round the sun frame (4), deflector roll is gone up correspondence from the frame (4) that revolves round the sun at least one group of anchor clamps (41) that V-type deflector roll matrix (1) is installed is set, be equipped with in the vacuum chamber (2) at least one magnetic control target position (21) and with the metal target position (22) of the corresponding setting of magnetic control target position (21), the outer magnetic control power cabinet (23) that is provided with control magnetic control target position (21) work of vacuum chamber (2).
9. special-purpose coating machine as claimed in claim 8 is characterized in that: described deflector roll is provided with four groups of anchor clamps (41) that V-type deflector roll matrix (1) is installed from the frame (4) that revolves round the sun.
10. special-purpose as claimed in claim 8 or 9 coating machine, it is characterized in that: described magnetic control target position (21) quantity is four, four magnetic control target position (21) evenly be centered around deflector roll from the frame (4) that revolves round the sun circumferentially, the metal of one or more combinations in the configurable nickel target of metal target position (22), titanium target, copper target, the chromium target.
11. special-purpose electroplating machine of producing the described solar silicon wafers line cutting of claim 1～4 deflector roll, be used at V-type deflector roll matrix (1) electroplating surface wear-resistant composite bed (1-2) of surface metalation, it is characterized in that: comprise electroplating bath (5), electroplating power supply (6), be arranged on the nickel electrode (51) in the electroplating bath (5), support the electrode suppor (52) and the electroplate liquid circulating pump (53) of nickel electrode (51), nickel electrode (51) has the cavity that V-type deflector roll matrix (1) is installed, the two ends of nickel electrode (51) are provided with to be supported V-type deflector roll matrix (1) and drives the deflector roll support (54) that V-type deflector roll matrix (1) rotates, has separation net (51-1) in the cavity between nickel electrode (51) and the V-type deflector roll matrix (1), described electroplating bath has electroplate liquid in (5), the two ends of nickel electrode (51) are respectively the inlet (51-2) and the liquid outlet (51-3) of electroplate liquid, liquid outlet (51-3) is communicated with electroplating bath (5), inlet (51-2) is communicated with by electroplate liquid circulating pump (53) with electroplating bath (5), the positive pole of described electroplating power supply (6) is electrically connected with V-type deflector roll matrix (1), and the negative pole of electroplating power supply (6) is electrically connected with nickel electrode (51).
12. the special-purpose electroplating machine of solar silicon wafers line cutting deflector roll as claimed in claim 11, it is characterized in that: described electroplate liquid is the compound nickel plating solution of nickel, contains carborundum and/or diamond particle and polyflon in the electroplate liquid.
13. the special-purpose electroplating machine of solar silicon wafers line cutting deflector roll as claimed in claim 12, it is characterized in that: the particulate adding set that also has carborundum in the interior electroplate liquid of control nickel electrode (51) and/or diamond particle concentration, described particulate adding set comprises particulate reservoir and the controller of fraction of particle detection in real time, described particulate reservoir is communicated with the cavity of nickel electrode (51), described real-time fraction of particle survey that controller is arranged in the electroplate liquid in nickel electrode (51) cavity and with particulate reservoir control connection.
14. the special-purpose electroplating machine of solar silicon wafers line cutting deflector roll as claimed in claim 11, it is characterized in that: described electroplating bath (5) is provided with pH meter (7) and the thermometer (8) of measuring electroplate liquid.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110112579.7A CN102225598B (en) | 2011-05-03 | 2011-05-03 | Solar silicon wafer wire cutting guide roller and manufacturing method and special film coating machine and electroplating machine |
| CN201410098697.0A CN103882398B (en) | 2011-05-03 | 2011-05-03 | Solar silicon wafers Linear cut deflector roll special coating system and electroplating machine |
| CN201410139617.1A CN103956401B (en) | 2011-05-03 | 2014-04-08 | A kind of efficient interconnected band for photovoltaic module and preparation method thereof |
| CN201410204596.7A CN104009108B (en) | 2011-05-03 | 2014-05-14 | A kind of high solderable High-efficiency photovoltaic solder strip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110112579.7A CN102225598B (en) | 2011-05-03 | 2011-05-03 | Solar silicon wafer wire cutting guide roller and manufacturing method and special film coating machine and electroplating machine |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410098697.0A Division CN103882398B (en) | 2011-05-03 | 2011-05-03 | Solar silicon wafers Linear cut deflector roll special coating system and electroplating machine |
| CN201410139617.1A Division CN103956401B (en) | 2011-05-03 | 2014-04-08 | A kind of efficient interconnected band for photovoltaic module and preparation method thereof |
| CN201410204596.7A Division CN104009108B (en) | 2011-05-03 | 2014-05-14 | A kind of high solderable High-efficiency photovoltaic solder strip |
| CN201410236303.3A Division CN103985775B (en) | 2014-05-29 | 2014-05-29 | A kind of high-efficiency photovoltaic isomery welding |
Publications (2)
| Publication Number | Publication Date |
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| CN102225598A true CN102225598A (en) | 2011-10-26 |
| CN102225598B CN102225598B (en) | 2014-04-30 |
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|---|---|---|---|
| CN201410098697.0A Expired - Fee Related CN103882398B (en) | 2011-05-03 | 2011-05-03 | Solar silicon wafers Linear cut deflector roll special coating system and electroplating machine |
| CN201110112579.7A Expired - Fee Related CN102225598B (en) | 2011-05-03 | 2011-05-03 | Solar silicon wafer wire cutting guide roller and manufacturing method and special film coating machine and electroplating machine |
| CN201410139617.1A Active CN103956401B (en) | 2011-05-03 | 2014-04-08 | A kind of efficient interconnected band for photovoltaic module and preparation method thereof |
| CN201410204596.7A Active CN104009108B (en) | 2011-05-03 | 2014-05-14 | A kind of high solderable High-efficiency photovoltaic solder strip |
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| CN201410098697.0A Expired - Fee Related CN103882398B (en) | 2011-05-03 | 2011-05-03 | Solar silicon wafers Linear cut deflector roll special coating system and electroplating machine |
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| CN201410139617.1A Active CN103956401B (en) | 2011-05-03 | 2014-04-08 | A kind of efficient interconnected band for photovoltaic module and preparation method thereof |
| CN201410204596.7A Active CN104009108B (en) | 2011-05-03 | 2014-05-14 | A kind of high solderable High-efficiency photovoltaic solder strip |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN103956401A (en) | 2014-07-30 |
| CN104009108A (en) | 2014-08-27 |
| CN103882398A (en) | 2014-06-25 |
| CN103956401B (en) | 2016-03-02 |
| CN102225598B (en) | 2014-04-30 |
| CN103882398B (en) | 2016-04-06 |
| CN104009108B (en) | 2017-03-15 |
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Denomination of invention: Solar silicon wafer wire cutting guide roller and manufacturing method and special film coating machine and electroplating machine Effective date of registration: 20150203 Granted publication date: 20140430 Pledgee: East Co. Ltd. Pledgor: Monte group (Hongkong) Limited Registration number: 2015990000090 |
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