CN102214775A - 发光元件搭载基板及使用了该基板的发光装置 - Google Patents

发光元件搭载基板及使用了该基板的发光装置 Download PDF

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Publication number
CN102214775A
CN102214775A CN2011100868985A CN201110086898A CN102214775A CN 102214775 A CN102214775 A CN 102214775A CN 2011100868985 A CN2011100868985 A CN 2011100868985A CN 201110086898 A CN201110086898 A CN 201110086898A CN 102214775 A CN102214775 A CN 102214775A
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CN
China
Prior art keywords
light
emitting component
glass
insulating barrier
nature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011100868985A
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English (en)
Chinese (zh)
Inventor
谷田正道
冈田利久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of CN102214775A publication Critical patent/CN102214775A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
CN2011100868985A 2010-04-02 2011-03-31 发光元件搭载基板及使用了该基板的发光装置 Pending CN102214775A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010086084 2010-04-02
JP2010-086084 2010-04-02

Publications (1)

Publication Number Publication Date
CN102214775A true CN102214775A (zh) 2011-10-12

Family

ID=44263055

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100868985A Pending CN102214775A (zh) 2010-04-02 2011-03-31 发光元件搭载基板及使用了该基板的发光装置

Country Status (6)

Country Link
US (1) US20110241049A1 (ko)
EP (1) EP2381496A1 (ko)
JP (1) JP2011228672A (ko)
KR (1) KR20110111243A (ko)
CN (1) CN102214775A (ko)
TW (1) TW201143168A (ko)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103145336A (zh) * 2013-04-23 2013-06-12 蚌埠玻璃工业设计研究院 一种硼硅酸盐玻璃及球形氧化铝低温共烧陶瓷生瓷带及其制备方法
CN104247055A (zh) * 2011-12-01 2014-12-24 克利公司 具有优良化学耐性的发光器件和元件及相关的方法
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
CN108870119A (zh) * 2017-05-12 2018-11-23 深圳市光峰光电技术有限公司 波长转换装置及其制备方法、激光荧光转换型光源
US10490712B2 (en) 2011-07-21 2019-11-26 Cree, Inc. Light emitter device packages, components, and methods for improved chemical resistance and related methods
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
CN111883630A (zh) * 2014-05-21 2020-11-03 日亚化学工业株式会社 发光装置
CN113004028A (zh) * 2021-03-02 2021-06-22 华中科技大学温州先进制造技术研究院 一种硅基低介微波介质陶瓷及其制备方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009128354A1 (ja) * 2008-04-18 2009-10-22 旭硝子株式会社 発光ダイオードパッケージ
JP5742844B2 (ja) 2010-07-07 2015-07-01 旭硝子株式会社 発光素子用反射枠体、発光素子用基板、および発光装置
EP2786429A4 (en) * 2011-12-01 2015-07-29 Cree Inc LIGHT EMITTING DEVICES AND COMPONENTS HAVING ENHANCED CHEMICAL RESISTANCE AND RELATED METHODS
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
US9240530B2 (en) 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
JP2013254820A (ja) * 2012-06-06 2013-12-19 Stanley Electric Co Ltd 発光素子搭載用基板および発光装置
JP6007733B2 (ja) * 2012-11-07 2016-10-12 旭硝子株式会社 ガラスペースト、およびガラス被覆基板の製造方法
TWI550920B (zh) * 2012-12-13 2016-09-21 鴻海精密工業股份有限公司 發光二極體
JP6171921B2 (ja) 2013-12-24 2017-08-02 日亜化学工業株式会社 配線基板及び発光装置
CN105830241B (zh) * 2013-12-27 2019-10-18 夏普株式会社 发光装置用基板、发光装置及发光装置用基板的制造方法
JP2017126714A (ja) * 2016-01-15 2017-07-20 東芝ライテック株式会社 発光装置
KR102473668B1 (ko) 2016-03-02 2022-12-01 삼성전자주식회사 발광 소자 실장 기판 및 이를 이용한 발광 패키지

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445743A (en) * 1987-08-13 1989-02-20 Asahi Glass Co Ltd Glass ceramic composition
JP2800176B2 (ja) * 1987-08-18 1998-09-21 旭硝子株式会社 ガラスセラミックス組成物
JPH01252548A (ja) * 1987-12-28 1989-10-09 Asahi Glass Co Ltd ガラスセラミックス組成物
JPH01179741A (ja) * 1988-01-12 1989-07-17 Asahi Glass Co Ltd ガラスセラミックス組成物
JP4114437B2 (ja) * 2002-08-27 2008-07-09 松下電工株式会社 Ｌｅｄチップ取付部材の製造方法及びそのｌｅｄチップ取付部材を用いたｌｅｄ実装基板
JP2007067116A (ja) 2005-08-30 2007-03-15 Toshiba Lighting & Technology Corp 発光装置
JP4948841B2 (ja) * 2006-01-30 2012-06-06 京セラ株式会社 発光装置および照明装置
JP4984609B2 (ja) * 2006-04-05 2012-07-25 日亜化学工業株式会社 半導体素子搭載用の支持体及び半導体装置
WO2008111504A1 (ja) * 2007-03-12 2008-09-18 Nichia Corporation 高出力発光装置及びそれに用いるパッケージ
JP2009231440A (ja) 2008-03-21 2009-10-08 Nippon Carbide Ind Co Inc 発光素子搭載用配線基板及び発光装置
JP5345363B2 (ja) * 2008-06-24 2013-11-20 シャープ株式会社 発光装置
CN102047455A (zh) * 2008-08-21 2011-05-04 旭硝子株式会社 发光装置
JP4983764B2 (ja) 2008-09-29 2012-07-25 ブラザー工業株式会社 印刷プログラム、及び、印刷システム
JP5640632B2 (ja) * 2010-03-12 2014-12-17 旭硝子株式会社 発光装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
US10490712B2 (en) 2011-07-21 2019-11-26 Cree, Inc. Light emitter device packages, components, and methods for improved chemical resistance and related methods
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
US11563156B2 (en) 2011-07-21 2023-01-24 Creeled, Inc. Light emitting devices and components having improved chemical resistance and related methods
CN104247055A (zh) * 2011-12-01 2014-12-24 克利公司 具有优良化学耐性的发光器件和元件及相关的方法
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
CN103145336A (zh) * 2013-04-23 2013-06-12 蚌埠玻璃工业设计研究院 一种硼硅酸盐玻璃及球形氧化铝低温共烧陶瓷生瓷带及其制备方法
CN103145336B (zh) * 2013-04-23 2015-08-12 蚌埠玻璃工业设计研究院 一种硼硅酸盐玻璃及球形氧化铝低温共烧陶瓷生瓷带及其制备方法
CN111883630A (zh) * 2014-05-21 2020-11-03 日亚化学工业株式会社 发光装置
CN108870119A (zh) * 2017-05-12 2018-11-23 深圳市光峰光电技术有限公司 波长转换装置及其制备方法、激光荧光转换型光源
CN113004028A (zh) * 2021-03-02 2021-06-22 华中科技大学温州先进制造技术研究院 一种硅基低介微波介质陶瓷及其制备方法
CN113004028B (zh) * 2021-03-02 2023-03-14 华中科技大学温州先进制造技术研究院 一种硅基低介微波介质陶瓷及其制备方法

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Publication number Publication date
KR20110111243A (ko) 2011-10-10
EP2381496A1 (en) 2011-10-26
JP2011228672A (ja) 2011-11-10
US20110241049A1 (en) 2011-10-06
TW201143168A (en) 2011-12-01

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Application publication date: 20111012