CN102213857A - Color filtering base plate and manufacturing method thereof - Google Patents
Color filtering base plate and manufacturing method thereof Download PDFInfo
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- CN102213857A CN102213857A CN201010140583XA CN201010140583A CN102213857A CN 102213857 A CN102213857 A CN 102213857A CN 201010140583X A CN201010140583X A CN 201010140583XA CN 201010140583 A CN201010140583 A CN 201010140583A CN 102213857 A CN102213857 A CN 102213857A
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Abstract
The invention relates to a color filtering base plate and a manufacturing method thereof. In the color filtering base plate provided by the invention, a shading pattern layer, an opening, a color filtering layer, a public electrode, a main spacer and an auxiliary spacer are arranged in the display region of the color filtering base plate, wherein the main spacer and the auxiliary spacer are arranged in the corresponding position at the periphery of the opening; and the thickness of the shading pattern layer in the corresponding position of the auxiliary spacer is thinner than the that of the shading pattern layer in the corresponding position of the main spacer. Compared with the prior art, the elasticity recovery rates of the main spacer and the auxiliary spacer which are formed in the color filtering base plate provided by the invention are approximately same.
Description
Technical field
The present invention relates to adjust sept, this sept of thickness of liquid crystal box (Cell Gap) method for making, be provided with the method for making of colored optical filtering substrates and this colored optical filtering substrates of this sept.
Background technology
In recent years, liquid crystal indicator is not only in the information communication device field, and also popularizes apace in general electric equipment field.This type of liquid crystal indicator generally comprises: first transparency carrier is provided with rectangular a plurality of array of pixel electrodes substrates, and on second transparency carrier corresponding pixel electrodes and a plurality of optical filtering pixels of being provided with and be covered in the colored optical filtering substrates of the counter electrode on the pixel, fit with encapsulant around the pixel electrode of this array base palte and the counter electrode of colored optical filtering substrates, between two substrates, inject liquid crystal at last.
At interval consistent in order to guarantee pixel electrode and counter electrode, promptly in order to reach the interval unanimity of thickness of liquid crystal box (Cell Gap), be that gap (Spacer) that small silicon dioxide granule and polystyrene particle make is dispersed in the viewing area in early days.But the variation of thickness of liquid crystal box part can take place owing to its skewness in this method with the sub-adjustment in gap thickness of liquid crystal box, thus phenomenons such as generation light leak, to the performance generation baneful influence of image quality.The method that showed original distribution gap that uses in field in recent years, the column spacer of being made by photoresistance (PhotoResist) (Gap Spacer) replaces gradually.
This sept is arranged on the correspondence position of pixel electrode periphery, can with the height ripple disable of homogeneous be arranged on non-pixel region, so thickness of liquid crystal box has advantage and the effect that can ripple disable stably maintains the both full-pixel zone.But liquid-crystal apparatus is according to the difference of temperature, and the liquid crystal volume of injection can change, and therefore also will allow the corresponding intervals thing play the effect of spring.If can't be out of shape when low temperature, liquid crystal cell is inner can to produce bubble; And if when high temperature, extend and can't recover, thickness of liquid crystal box will be unstable and produce look inhomogeneous (be so-called Mura phenomenon, i.e. the inhomogeneous phenomenon that causes various vestiges of display brightness).But less with the sept elasticity that photoresistance is made, easy deformation, the distortion surplus can't be recovered, and wants to improve recovery rate on the contrary and need be not easy distortion, is difficult to realize satisfactory to both parties.
In order to address the above problem, begin in the industry to adopt secondary sept (Sub Spacer) method is set on the position of pixel electrode periphery, improve primary divider (Main Spacer) because of being out of shape the low phenomenon of surplus recovery rate.General secondary sept with respect to the low 0.2-0.8 μ m of primary divider significant height about.Concrete grammar has two kinds: (1) has the major-minor sept of same height and DE in colored optical filtering substrates (Color Filter is called for short CF) side setting, and the TFT substrate-side of primary divider correspondence position is provided with the protrusion member of height 0.2-0.8 μ m; (2) the colored optical filtering substrates side is provided with the secondary sept than the low 0.2-0.8 μ m of primary divider.Be that first method is a main flow at present, can make on the wires design and be restricted but the TFT substrate-side will be provided with unnecessary structure, so the universal use of second method becomes the trend of development.
TOHKEMY 2007-232839 communique discloses a kind of liquid crystal indicator that useful second method is provided with highly higher primary divider and highly lower secondary sept that contains.Have 2 kinds of highly different column spacers (Gap Spacer) at least, when between substrate, being subjected to loading, highly higher sept is played a supporting role, and guarantees that column spacer (Gap Spacer) can not drop to below the ratings, thereby guarantees column spacer (GapSpacer is stable); And the distortion of single spacer when supporting be difficult for transferring to adjacent other sept, so can guarantee column spacer (Gap Spacer) homogeneity in both full-pixel zone, is difficult for producing and shows Mura, is achieved the liquid-crystal apparatus of display quality excellence.
Yet said method can make that the elastic property of primary divider and secondary sept is different (elastic property is relevant with the sept height) owing to use identical materials to constitute the major and minor sept of differing heights.Therefore there is the problem that can not get balance of deflection and elastic restoration ratio in the first method of using now.And have the problem that to carry out 2 operations when being configured in the sept of 2 kinds of differing heights on the colored optical filtering substrates.
Summary of the invention
The objective of the invention is to above-mentioned situation is improved, a kind of method and structure is provided, just can on chromatic filter layer, form highly different primary divider and secondary sept simultaneously by an operation, and elastic restoration ratio is roughly the same.Display panels uses the colored optical filtering substrates that has disposed the major-minor sept, can keep the thickness of liquid crystal layer homogeneity when colored optical filtering substrates and subtend baseplate-laminating, does not have the Mura of demonstration, and helps controlling manufacturing cost.
In order to achieve the above object, the invention provides a kind of colored optical filtering substrates, shielding pattern layer, opening, chromatic filter layer, common electrode, primary divider and secondary sept are set in the viewing area of this colored optical filtering substrates, described primary divider and secondary sept are arranged on the correspondence position of described open circumferential, it is characterized in that the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness of the shielding pattern layer of described primary divider correspondence position.
In above-mentioned colored optical filtering substrates, the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness 0.2 μ m～1 μ m of the shielding pattern layer of described primary divider correspondence position.
In above-mentioned colored optical filtering substrates, the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness 0.4 μ m～0.8 μ m of the shielding pattern layer of the described primary divider correspondence position of correspondence.
In above-mentioned colored optical filtering substrates, the correspondence position that thin thickness on the shielding pattern layer of described secondary sept is set to the distance of adjacent apertures portion about equally.
The present invention also provides a kind of colored optical filtering substrates, have shielding pattern layer, opening, chromatic filter layer, common electrode, primary divider and secondary sept, described primary divider and secondary sept are arranged on the correspondence position of described open circumferential, the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness of the shielding pattern layer of described primary divider correspondence position, the elastic restoration ratio of described primary divider and described secondary sept differs ± 15% in.
Primary divider described in the above-mentioned colored optical filtering substrates and the elastic restoration ratio of secondary sept differ ± 10% in.
The present invention also provides a kind of method for making of colored optical filtering substrates, comprises:
Form shielding pattern layer on the washed glass substrate, the part that does not form shielding pattern layer forms opening;
When forming described shielding pattern layer, on the position of the secondary sept of described shielding pattern layer preparation configuration, form depression, make the thickness of described recess shielding pattern layer thinner than the part of the shielding pattern layer that disposes primary divider;
On the real estate that has formed described shielding pattern layer, form chromatic filter layer;
Form common electrode; And
Form primary divider and secondary sept, described secondary sept is formed on the described depression.
In above-mentioned method for making, the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness 0.2 μ m～1 μ m of the shielding pattern layer of described primary divider correspondence position.
In above-mentioned method for making, the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness 0.4 μ m～0.8 μ m of the shielding pattern layer of the described primary divider correspondence position of correspondence.
In above-mentioned method for making, the correspondence position that thin thickness on the shielding pattern layer of described secondary sept is set to the distance of adjacent apertures portion about equally.
In above-mentioned method for making, the method for described formation primary divider and secondary sept comprises:
With the transcription of solid-state photosensitive resin transfer film to described chromatic filter layer;
Adopt the light shield of assignment graph that described solid-state photosensitive resin transfer film is exposed;
The solid-state photosensitive resin transfer film that has exposed is developed, obtain described primary divider and described secondary sept figure;
At last, clean.
In the above method for making, solid-state photo-sensitive resin comprises solid-state photo-sensitive resin, thermoplastic resin layer and middle layer successively; Describedly the solid-state photosensitive resin transfer film that has exposed carried out step of developing comprise:
Described solid-state photosensitive resin transfer film is developed, to remove described thermoplastic resin layer and middle layer;
Described solid-state photosensitive resin transfer film is developed, to obtain described primary divider and described secondary sept figure.
Description of drawings
Figure 1A to Fig. 1 C shows the making flow process of colored optical filtering substrates of the present invention;
Fig. 2 is the structural drawing of the colored optical filtering substrates of prior art;
Fig. 3 is the partial top view of colored optical filtering substrates of the present invention;
Fig. 4 is the synoptic diagram of method for making of explaining the depression of colored optical filtering substrates of the present invention;
Fig. 5 shows the method that the present invention forms sept;
Fig. 6 shows the method that forms sept in the prior art.
Embodiment
Below, liquid crystal sept involved in the present invention is carried out the explanation of instantiation with reference to Fig. 1 C and Fig. 3.But, embodiment shown below just for technical conceive of the present invention is specialized for the example relevant with sept, be not to lift in order to refer in particular to the present invention, it does not break away from the technological thought shown in the patent request scope, and is suitable on an equal basis to the example of various variations yet.In addition, Fig. 1, Fig. 3 are for sept and the colored optical filtering substrates structural drawing among the embodiment is described, Fig. 2 is the cross-section structure when forming spacer in the prior art.
The sept that prior art is made as shown in Figure 2, shielding pattern layer 21 (Black Matrix) on the formation optical filtering substrate and chromatic filter layer 22 (Color Resist Layer) and common electrode (are also referred to as transparency conducting layer or ITO film, not shown) afterwards, according to the structure of the interval on the orientation TFT substrate, primary divider 23 and secondary sept 24 are set on the correspondence position of open circumferential.In the prior art of Fig. 2, primary divider 23 is different with the height of secondary sept 24.
Sept of the present invention such as Fig. 1 C and shown in Figure 3, primary divider 13 is in identical position with the primary divider 23 of prior art, though and the position of secondary sept 14 is with traditional identical, but before forming secondary sept 14, form elder generation's formation depression 15 on shielding pattern layer in the operation in shielding pattern layer, and then on this depression 15, form secondary sept 14.By adjusting the degree of depth of depression 15, control the elastic property and master space post 13 differences in height of secondary sept 14 like this, can accomplish that the height of secondary sept 14 is identical with the height of primary divider 13, perhaps both differences in height are littler than the prior art.
Please be simultaneously with reference to Fig. 1 C and shown in Figure 3, wherein, Fig. 1 C is the cut-open view along A-A ' line among Fig. 3.Colored optical filtering substrates of the present invention includes substrate 10 and the shielding pattern layer 11 that is positioned on the substrate 10, and the part of no shielding pattern layer 11 forms opening 16 on the substrate 10.On opening 16, be formed with chromatic filter layer 12, same, be formed with the transparency electrode (not shown).Usually in color monitor, each pixel is made of three sub-pixels, i.e. red sub-pixel, green sub-pixels and blue subpixels.Therefore, in the present embodiment, on opening 16R, be formed with red filter layer 12R, become red sub-pixel; On opening 16G, be formed with green filter layer 12G, become green sub-pixels; On opening 16B, be formed with blue color filter layer 12B, become blue subpixels.Three adjacent sub-pixels constitute a complete pixel.On the shielding pattern layer 11 of primary divider 13 and secondary sept 14 formation openings 16 peripheries (promptly being formed on the correspondence position of open circumferential).As mentioned above, principal character of the present invention is to be formed with depression 15 on the position of shielding pattern layer 11 secondary septs 14 to be configured, promptly makes the thickness of shielding pattern layer of secondary sept 14 correspondence positions than the thin thickness of the shielding pattern layer of primary divider 13 correspondence positions.Then, secondary sept 14 is arranged on this depression 15.
In one embodiment of the invention, the degree of depth of this depression 15 is at 0.2 μ m～1 μ m, and the thickness of the shielding pattern layer of promptly secondary sept 14 correspondence positions is than the thin thickness 0.2 μ m～1 μ m of the light-shielding pattern of primary divider 13 correspondence positions; In better embodiment, the degree of depth of this depression 15 is at 0.4 μ m～0.8 μ m, and the thickness of the shielding pattern layer of promptly secondary sept 14 correspondence positions is than the thin thickness 0.4 μ m～0.8 μ m of the shielding pattern layer of primary divider 13 correspondence positions.The correspondence position (promptly caving in 15) that thin thickness on the shielding pattern layer of secondary sept is set to the distance of adjacent apertures portion about equally.
In another embodiment of the present invention, the elastic restoration ratio of primary divider 13 and secondary sept 14 differ ± 15% in; Preferably, the elastic restoration ratio of primary divider 13 and secondary sept 14 differ ± 10% in.
Below the formation method of the sept among the present invention on substrate done specific description.
See also Figure 1A to Fig. 1 C, simultaneously referring to Fig. 3.At first, on washed glass substrate 10, form shielding pattern layer 11, shown in Figure 1A.The part that does not form shielding pattern layer 11 on the glass substrate 10 forms opening 16.When forming shielding pattern layer 11, prepare in shielding pattern layer 11 to form depression 15 on the position of the secondary sept 14 of configuration, make the thickness of depression 15 place's shielding pattern layer 11 thinner than the part of the shielding pattern layer 11 of configuration primary divider 13.In order to form depression 15 on the position of preparing the secondary sept 14 of configuration in shielding pattern layer 11, can utilize light shield 20 as shown in Figure 4, transmittance promptly is set light shield 20 is prepared the position of the secondary sept 14 of configuration corresponding to shielding pattern layer on is lower than 100% pattern 21 (for example 50%, the degree of depth of the depression 15 that can optionally form and decide), and other locational transmittance is 100%.After the exposure, develop.Be lower than 100% pattern owing on the position of light shield, have transmittance, therefore, on the position of the secondary sept 14 of shielding pattern layer preparation configuration, formed depression 15 during development corresponding to the secondary sept 14 of configuration.
Then, shown in Figure 1B, opening 16 places form chromatic filter layer 12.
Then, on the above-mentioned substrate that obtains, form common electrode (ITO, not shown).At last, form primary divider 13 and secondary sept 14, secondary sept 14 is formed on the above-mentioned depression 15, shown in Fig. 1 C.
Can notice, in example shown in Figure 3, near red sub-pixel, be provided with primary divider and secondary sept, and near green sub-pixels and blue subpixels, only be provided with secondary sept.But be to be understood that, the structure that is provided with of this major-minor sept is not unique, here only be an example of enumerating for explanation the present invention, the position that is provided with as for primary divider and secondary sept, according to the different multiple modes that needs, these different multiple modes are equally applicable to the present invention in the prior art.For example, also can near green sub-pixels and blue subpixels, primary divider be set; Primary divider and secondary sept perhaps only are set near red sub-pixel, primary divider and secondary sept are not set in green sub-pixels and blue subpixels annex.
Below with the form of example, provide a concrete example, but be to be understood that, this example only is to implement a method of the present invention, to help understanding and to implement, do not tackle scope of the present invention and provide any restriction, some numerical value that wherein relate to also only are examples, should not be considered as implementing the unique numerical value of the present invention.
-shielding pattern layer formation operation-
Shielding pattern layer is utilized slit coater with photosensitive compoistion (the Tokyo chemical industry is made BKSL-1), coating on washed glass substrate 10.By adjusting slit and substrate distance and coating volume, after the 120mm/ speed coating of second, forming thickness is the film (baking back) of 1 μ m.
-preceding baking engineering, the exposure engineering-
Next, utilize the heat dish, after heating 120 seconds (preceding baking processing) under 90 ℃, utilize the close induction type litho machine of having equipped high-pressure mercury-vapor lamp, with quartzy light shield, be that 60mJ/cm2, exposing clearance are to expose under the condition of 200 μ m in exposure with assignment graph.The light shield of assignment graph can be with reference to Fig. 4.On the shielding pattern layer between the adjacent opening 16,, and make depression for the secondary sept of configuration in subsequent handling.Make light shield is 50% in the transmitance with the corresponding position of recess for this reason.The light-shielding pattern layer thickness that can make this place after the development like this is than part is slightly thin usually.
-development engineering-
Then, in horizontal conveyance formula developing machine, develop.1.0% the developer solution CDK-1 that promptly utilizes potassium hydroxide system (Fujiphoto electron optics Materials Co., Ltd system) is (under 25 ℃, a CDK-1 is diluted the liquid that forms with 99 parts of pure water), dashing pouring pressure is under the 0.20MPa, carry out developing in 60 seconds the light-shielding pattern after promptly obtaining developing with pure water is clean again.
-baking engineering-
Next carry out 40 minutes baking processing in 220 ℃ cleaning oven, forming the opening with pixel field is that 90 μ m * 200 μ m, thickness are that 1.2 μ m, short brink wire spoke are that about 53 μ m, long side wire spoke are the substrate of the cancellate shielding pattern layer 11 of about 25 μ m.
Utilizing the optical concentration value (OD) of the light-shielding pattern that X-Rite 361T (V) (SAKATA INX ENG system) apparatus measures makes is 4.5.
The formation operation R-of-chromatic filter layer 12
Red (R) photosensitive color constituent coating fluid CR-1 (FujiFilm) is coated on the real estate that has formed above-mentioned light-shielding pattern.Concrete the same when forming light-shielding pattern, for the thickness that makes the photosensitive color constituent layer after the baking of back reaches about 2.1 μ m, by adjusting slit and substrate distance and be coated with volume, be coated with the speed of 120mm/ second.
Baking engineering before the-color layer, color layer exposure engineering-
Next, utilize the heat dish,, utilize the litho machine of the close induction type of having equipped high-pressure mercury-vapor lamp and light shield, under the condition of exposure 90mJ/cm2, exposing clearance 200 μ m, expose with assignment graph at 100 ℃ down after the heating 120 seconds (preceding baking processing).
-color layer development engineering, color layer baking engineering-
Then, in horizontal conveyance formula developing machine, develop.1.0% the developer solution CDK-1 that promptly utilizes potassium hydroxide system (Fujiphoto electron optics Materials Co., Ltd system) is (under 25 ℃, 1 part of CDK-1 is diluted the liquid that forms with 99 parts of pure water), dashing pouring pressure is under the 0.20Mpa, carries out developing in 45 seconds, cleans with pure water again.
Next in 220 ℃ cleaning oven, carry out 30 minutes baking processing, can form through heat treated red pixel.
The formation process B of-chromatic filter layer-
Blue (B) photosensitive color constituent coating fluid CB-1 (FujiFilm) is coated on the real estate that has formed above-mentioned light-shielding pattern.Concrete the same when forming BM, for the thickness that makes the photosensitive color constituent layer after the baking of back reaches about 2.1 μ m, by adjusting slit and substrate distance and be coated with volume, be coated with the speed of 120mm/ second.
Baking engineering before the-color layer, color layer exposure engineering-
Next, utilize the heat dish,, utilize the litho machine of the close induction type of having equipped high-pressure mercury-vapor lamp and light shield, under the condition of exposure 90mJ/cm2, exposing clearance 200 μ m, expose with assignment graph at 100 ℃ down after the heating 120 seconds (preceding baking processing).
-color layer development engineering, color layer baking engineering-
Then, in horizontal conveyance formula developing machine, develop.1.0% the developer solution CDK-1 that promptly utilizes potassium hydroxide system (Fujiphoto electron optics Materials Co., Ltd system) is (under 25 ℃, 1 part of CDK-1 is diluted the liquid that forms with 99 parts of pure water), dashing pouring pressure is under the 0.20Mpa, carries out developing in 45 seconds, cleans with pure water again.
Next in 220 ℃ cleaning oven, carry out 30 minutes baking processing, can form through heat treated blue pixel.
The formation operation G-of-chromatic filter layer
Green (G) photosensitive color constituent coating fluid CG-1 (FujiFilm) is coated on the real estate that has formed above-mentioned light-shielding pattern.Concrete the same when forming BM, for the thickness that makes the photosensitive color constituent layer after the baking of back reaches about 2.1 μ m, by adjusting slit and substrate distance and be coated with volume, be coated with the speed of 120mm/ second.
Baking engineering before the-color layer, color layer exposure engineering-
Next, utilize the heat dish,, utilize the litho machine of the close induction type of having equipped high-pressure mercury-vapor lamp and light shield, under the condition of exposure 90mJ/cm2, exposing clearance 200 μ m, expose with assignment graph at 100 ℃ down after the heating 120 seconds (preceding baking processing).
-color layer development engineering, color layer baking engineering-
Then, in horizontal conveyance formula developing machine, develop.1.0% the developer solution CDK-1 that promptly utilizes potassium hydroxide system (Fujiphoto electron optics Materials Co., Ltd system) is (under 25 ℃, 1 part of CDK-1 is diluted the liquid that forms with 99 parts of pure water), dashing pouring pressure is under the 0.20Mpa, carries out developing in 45 seconds, cleans with pure water again.
Next in 220 ℃ cleaning oven, carry out 30 minutes baking processing, can form through heat treated green pixel.
On the above-mentioned substrate that obtains, sputter has formed thickness 1400A, and the ITO of face impedance 10 Ω/ (IndiumTin Oxide) film is as transparency electrode.
The formation operation of-sept (Gap Spacer)-
See also shown in Figure 5ly, use solid-state photosensitive resin transfer film (Fuji-Film) to form sept.This solid-state photosensitive resin transfer film comprises solid-state successively photo-sensitive resin, thermoplastic resin layer and middle layer 22, under line pressure 100N/cm, 130 ℃ pressurized, heated condition, condition with conveyance speed 2m/min has been carried out transcription to aforesaid substrate with transfer printing, and solid-state photosensitive resin layer is attached on the substrate.Use the light shield 23 that has the close induction type exposure machine of high-pressure sodium lamp and have assignment graph then, with exposure 100mJ/cm
2, exposing clearance 150 μ m condition expose.Assignment graph on the light shield 23 is relevant with the position of primary divider to be formed and secondary sept.
Be that (Fujiphoto electron optics Materials Co., Ltd system) developer solution T-PD2 is (under 30 ℃ then with Tri-ethanolamine, the liquid that 1 part of T-PD1 is formed with the dilution of 9 parts of pure water) dash at fan type nozzle that to drench pressure be under the 0.40MPa, carry out developing in 50 seconds, remove thermoplastic resin layer and middle layer.
And then be that (Fujiphoto electron optics Materials Co., Ltd system) developer solution T-CD1 is under 29 ℃ with sodium carbonate, the liquid that 1 part of T-CD1 is formed with the dilution of 9 parts of pure water) dash at tapered nozzle that to drench pressure be under the 0.15MPa, carry out developing in 50 seconds, obtained the pattern of sept (Gap Spacer).
Use (Fujiphoto electron optics Materials Co., Ltd system) clean-out system T-SD3 then (under 30 ℃, the liquid that 1 part of T-SD3 is formed with the dilution of 9 parts of pure water) dash at tapered nozzle that to drench pressure be under the 0.02MPa, carry out developing in 20 seconds, remove the residue that forms the pattern periphery with brush, obtained the spacer patterns that requires.To carry out the colored optical filtering substrates of spacer patterns at last, under 230 ℃, carry out the 60min heat treated.Through above operation, obtained having the colored optical filtering substrates of expecting sept.
The spacer patterns that obtains such as Fig. 1 C and shown in Figure 3 are reference standard with blue filter pattern, and the difference of height of primary divider and secondary sept is 0.4 μ m.In addition, difference of height is resolved microscope (ZYGO system: New View 5022) measure with the three-D surface structure.And elastic restoration ratio uses micro-hardness tester (island Tianjin system HMV-1) to measure the elastic property basically identical of primary divider and secondary sept.
Comparative example
As comparative example of the present invention, made following colored optical filtering substrates.
About the formation operation exposure light shield difference of light-shielding pattern, except the transmitance with the mask pattern of the corresponding part of secondary sept allocation position is about 100%, other adopts and embodiment the same manner is made.
Make about chromatic filter layer formation operation (R, B, G) employing and embodiment the same manner.
On the above-mentioned substrate that obtains, sputter has formed thickness 1400 dusts, and the ITO of face impedance 20 Ω/ (Indium μ m Tin Oxide) film is as transparency electrode.
The formation of-sept-
Sept is formed the face side with the light-shielding pattern that photosensitive compoistion CSP (FujiFilm system) is applied to aforesaid base plate.Specifically, for the thickness that makes the photosensitive color constituent layer after the back baking reaches about 4.2 μ m, by adjusting slit with substrate distance be coated with volume, be coated with the speed of 120mm/ second.Use hot dish then, after 120 seconds, expose with close induction type litho machine that has high-pressure sodium lamp and the light shield 25 that has given pattern in heating under 100 ℃.But the transmitance of the mask pattern 26 of the corresponding part of allocation position of the secondary sept of this moment is about 30%.
Then, in horizontal conveyance formula developing machine, develop.Promptly utilize 1.0% developer solution of potassium hydroxide system, to drench pressure be under the 0.20MPa dashing, and carries out developing in 45 seconds, cleans with pure water, and use pure water rinsing.Last baking processing of carrying out 30 minutes in 220 ℃ cleaning oven can form primary divider and secondary sept.
The spacer patterns that obtains is resolved microscope (ZYGO system: NewView 5022) with the three-D surface structure and is measured as shown in Figure 6, and the difference of height of primary divider and secondary sept is 0.4 μ m.Measured elastic restoration ratio with micro-hardness tester (island Tianjin system HMV-1) equally, the result shows that the elastic property of secondary sept is littler than primary divider.
The making of＜liquid crystal indicator 〉
Use on the glass substrate and carry out the substrate of TFT as the subtend substrate.The transparency electrode face side of the colored optical filtering substrates that has sept that in the foregoing description and comparative example, obtains and the TFT of subtend substrate form the face side be coated with that thickness is the alignment film (JSR makes AL1254) of 0.5 μ m behind the sintering, in 180 ℃ baking oven sintering, and carried out the friction matching processing by the direction of TN pattern correspondence.Then, be applied to the TFT substrate-side with Dispencer mode resin-sealed dose after around the colored optical filtering substrates with infrared cure, is central standard with liquid crystal material (Chisso system) with Cell Gap 3.5 μ m with the TN pattern, fits in the level of its scope of-6%～+ 6% change amount of liquid crystal.And shone hermetic unit with ultraviolet ray, cooperate thermal treatment that sealant is fully hardened again.Pasted Polarizer (Sanritz makes HLC2-2518) (i.e. parallel state of the polarizing axis of 2 pieces of polarisation versions) on the liquid crystal cell two sides that obtains with normal black pattern.Then be the rear side that the backlight of light source is configured to the foregoing liquid crystal box, formed liquid crystal indicator the fluorescent light of 3 wavelength.
The effect of invention
The following describes effect of the present invention. Take blue filter pattern as reference standard, primary divider is than secondary interval object height 0.4 μ m (with respect to glass baseplate surface) in an embodiment of the present invention, and the elastic characteristic of primary divider and secondary sept (elastic restoration ratio) is basically identical after tested. On the other hand, primary divider is equally than secondary interval object height 0.4 μ m in the comparative example, but with regard to elastic characteristic, the recovery rate of secondary sept is lower than primary divider. Use these colored optical filtering substrates, made liquid crystal indicator with amount of liquid crystal-6%～+ 6% level, after placing 60 minutes under-20 ℃ the low temperature state, the backlight that use is lit a lamp is confirmed show state, after placing 60 minutes under 60 ℃ the condition of high temperature, confirm show state with the backlight of lighting a lamp again afterwards, measured the scope (liquid crystal Margin) of the amount of liquid crystal of no display abnormality. Measurement result shows that the amount of liquid crystal scope that colored optical filtering substrates described in the embodiment of the invention does not have display abnormality is-4%～+ 4%. And the amount of liquid crystal scope that colored optical filtering substrates does not have a display abnormality in the comparative example is-2%～+ 4%, less than the embodiment of the invention, namely can obviously increase liquid crystal Margin by the present invention.
Claims (12)
1. colored optical filtering substrates, shielding pattern layer, opening, chromatic filter layer, common electrode, primary divider and secondary sept are set in the viewing area of this colored optical filtering substrates, described primary divider and secondary sept are arranged on the correspondence position of described open circumferential, it is characterized in that the thickness of the shielding pattern layer of described secondary sept correspondence position is than the shielding pattern layer thin thickness of described primary divider correspondence position.
2. colored optical filtering substrates as claimed in claim 1 is characterized in that, the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness 0.2 μ m～1 μ m of the shielding pattern layer of described primary divider correspondence position.
3. colored optical filtering substrates as claimed in claim 2 is characterized in that, the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness 0.4 μ m～0.8 μ m of the shielding pattern layer of the described primary divider correspondence position of correspondence.
4. as claim 1,2 or 3 described colored optical filtering substrates, it is characterized in that the correspondence position that thin thickness on the shielding pattern layer of described secondary sept is set to the distance of adjacent apertures portion about equally.
5. colored optical filtering substrates, have shielding pattern layer, opening, chromatic filter layer, common electrode, primary divider and secondary sept, described primary divider and secondary sept are arranged on the correspondence position of described open circumferential, it is characterized in that, the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness of the shielding pattern layer of described primary divider correspondence position, the elastic restoration ratio of described primary divider and described secondary sept differs ± 15% in.
6. colored optical filtering substrates as claimed in claim 5, described primary divider and the elastic restoration ratio of secondary sept differ ± 10% in.
7. the method for making of a colored optical filtering substrates comprises:
Form shielding pattern layer on the washed glass substrate, the part that does not form shielding pattern layer forms opening;
When forming described shielding pattern layer, on the position of the secondary sept of described shielding pattern layer preparation configuration, form depression, make the thickness of described recess shielding pattern layer thinner than the part of the shielding pattern layer that disposes primary divider;
On the real estate that has formed described shielding pattern layer, form chromatic filter layer;
Form common electrode; And
Form primary divider and secondary sept, described secondary sept is formed on the described depression.
8. method for making as claimed in claim 7 is characterized in that, the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness 0.2 μ m～1 μ m of the shielding pattern layer of described primary divider correspondence position.
9. method for making as claimed in claim 8 is characterized in that, the thickness of the shielding pattern layer of described secondary sept correspondence position is than the thin thickness 0.4 μ m～0.8 μ m of the shielding pattern layer of the described primary divider correspondence position of correspondence.
10. as claim 7,8 or 9 described method for makings, it is characterized in that the correspondence position that thin thickness on the shielding pattern layer of described secondary sept is set to the distance of adjacent apertures portion about equally.
11. method for making as claimed in claim 7 is characterized in that, the method for described formation primary divider and secondary sept comprises:
With the transcription of solid-state photosensitive resin transfer film on described shielding pattern layer;
Adopt the light shield of assignment graph that described solid-state photosensitive resin transfer film is exposed;
The solid-state photosensitive resin transfer film that has exposed is developed, obtain described primary divider and described secondary sept figure;
At last, clean.
12. method for making as claimed in claim 11 is characterized in that, solid-state photo-sensitive resin comprises solid-state photo-sensitive resin, thermoplastic resin layer and middle layer successively; Describedly the solid-state photosensitive resin transfer film that has exposed carried out step of developing comprise:
Described solid-state photosensitive resin transfer film is developed, to remove described thermoplastic resin layer and middle layer;
Described solid-state photosensitive resin transfer film is developed, to obtain described primary divider and described secondary sept figure.
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