CN102210032B - 用于制造发射辐射的薄膜器件的方法和发射辐射的薄膜器件 - Google Patents

用于制造发射辐射的薄膜器件的方法和发射辐射的薄膜器件 Download PDF

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Publication number
CN102210032B
CN102210032B CN200980144647.9A CN200980144647A CN102210032B CN 102210032 B CN102210032 B CN 102210032B CN 200980144647 A CN200980144647 A CN 200980144647A CN 102210032 B CN102210032 B CN 102210032B
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China
Prior art keywords
substrate
semiconductor layer
nanometer rods
layer sequence
nanorods
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Expired - Fee Related
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CN200980144647.9A
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English (en)
Chinese (zh)
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CN102210032A (zh
Inventor
汉斯-于尔根·卢高尔
克劳斯·施特罗伊贝尔
马丁·斯特拉斯伯格
赖纳·温迪施
卡尔·恩格尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN102210032A publication Critical patent/CN102210032A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN200980144647.9A 2008-11-06 2009-10-19 用于制造发射辐射的薄膜器件的方法和发射辐射的薄膜器件 Expired - Fee Related CN102210032B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008056175A DE102008056175A1 (de) 2008-11-06 2008-11-06 Verfahren zur Herstellung eines Strahlung emittierenden Dünnschichtbauelements und Strahlung emittierendes Dünnschichtbauelement
DE102008056175.4 2008-11-06
PCT/DE2009/001449 WO2010051790A1 (de) 2008-11-06 2009-10-19 Verfahren zur herstellung eines strahlung emittierenden dünnschichtbauelements und strahlung emittierendes dünnschichtbauelement

Publications (2)

Publication Number Publication Date
CN102210032A CN102210032A (zh) 2011-10-05
CN102210032B true CN102210032B (zh) 2014-07-16

Family

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CN200980144647.9A Expired - Fee Related CN102210032B (zh) 2008-11-06 2009-10-19 用于制造发射辐射的薄膜器件的方法和发射辐射的薄膜器件

Country Status (8)

Country Link
US (1) US8420439B2 (enExample)
EP (1) EP2342764B1 (enExample)
JP (1) JP5740309B2 (enExample)
KR (1) KR101678236B1 (enExample)
CN (1) CN102210032B (enExample)
DE (1) DE102008056175A1 (enExample)
TW (1) TWI425657B (enExample)
WO (1) WO2010051790A1 (enExample)

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DE102010008905B3 (de) * 2010-02-23 2011-06-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Bestimmung einer Struktur eines Halbleitermaterials mit vordefinierten elektrooptischen Eigenschaften sowie Verfahren zu dessen Herstellung
JP5620724B2 (ja) * 2010-06-22 2014-11-05 スタンレー電気株式会社 半導体素子の製造方法、積層構造体の製造方法、半導体ウエハおよび積層構造体。
DE102010046792A1 (de) 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
TWI478378B (zh) * 2010-10-25 2015-03-21 Advanced Optoelectronic Tech 發光二極體及其製造方法
GB2485346A (en) * 2010-11-08 2012-05-16 Nanogan Ltd High quality devices growth on pixelated patent templates
KR101202731B1 (ko) 2011-04-27 2012-11-20 영남대학교 산학협력단 수직형 발광 다이오드의 제조 방법
DE102011117381A1 (de) 2011-10-28 2013-05-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP2016535436A (ja) * 2013-10-21 2016-11-10 センサー エレクトロニック テクノロジー インコーポレイテッド 複合半導体層を含むヘテロ構造
CN104681688B (zh) * 2013-11-27 2018-09-11 清华大学 一种微结构层及发光二极管
JP2016194697A (ja) * 2016-05-10 2016-11-17 ウシオ電機株式会社 蛍光光源装置
JP7090861B2 (ja) * 2017-02-28 2022-06-27 学校法人上智学院 光デバイスおよび光デバイスの製造方法
JP7333666B2 (ja) * 2017-02-28 2023-08-25 学校法人上智学院 光デバイスおよび光デバイスの製造方法
FR3074960B1 (fr) * 2017-12-07 2019-12-06 Soitec Procede de transfert d'une couche utilisant une structure demontable
KR20210155693A (ko) 2020-06-16 2021-12-23 삼성전자주식회사 플랫 탑을 갖는 나노로드 반도체층과 이를 이용한 마이크로 led와 이를 포함하는 화소 플레이트와 이를 포함하는 디스플레이 장치와 전자장치들
CN112993103B (zh) * 2021-02-08 2022-06-03 广东省科学院半导体研究所 可剥离氮化物结构及其剥离方法
KR20220170662A (ko) 2021-06-23 2022-12-30 삼성전자주식회사 나노 막대 발광 소자 및 그 제조 방법, 및 나노 막대 발광 소자를 포함하는 디스플레이 장치
DE102022129759A1 (de) * 2022-11-10 2024-05-16 Ams-Osram International Gmbh Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement

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US6596377B1 (en) * 2000-03-27 2003-07-22 Science & Technology Corporation @ Unm Thin film product and method of forming

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DE10056645B4 (de) 2000-11-09 2007-03-08 Azzurro Semiconductors Ag Verfahren zur Herstellung von rißfreien, planaren Gruppe-III-N,Gruppe III-V-N und Metall-Stickstoff Bauelementestrukturen auf Si-Substraten mittels epitaktischer Methoden
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Also Published As

Publication number Publication date
DE102008056175A1 (de) 2010-05-12
EP2342764B1 (de) 2016-01-13
WO2010051790A1 (de) 2010-05-14
JP5740309B2 (ja) 2015-06-24
KR20110084170A (ko) 2011-07-21
EP2342764A1 (de) 2011-07-13
JP2012507840A (ja) 2012-03-29
KR101678236B1 (ko) 2016-11-21
TW201027805A (en) 2010-07-16
US8420439B2 (en) 2013-04-16
CN102210032A (zh) 2011-10-05
US20110215295A1 (en) 2011-09-08
TWI425657B (zh) 2014-02-01

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Granted publication date: 20140716

Termination date: 20191019