CN102199399B - 对包含多晶硅、氧化硅和氮化硅的基片进行抛光的方法 - Google Patents

对包含多晶硅、氧化硅和氮化硅的基片进行抛光的方法 Download PDF

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Publication number
CN102199399B
CN102199399B CN201110072210.8A CN201110072210A CN102199399B CN 102199399 B CN102199399 B CN 102199399B CN 201110072210 A CN201110072210 A CN 201110072210A CN 102199399 B CN102199399 B CN 102199399B
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CN
China
Prior art keywords
mechanical polishing
polysilicon
substrate
chemical mechanical
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110072210.8A
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English (en)
Chinese (zh)
Other versions
CN102199399A (zh
Inventor
郭毅
刘振东
K-A·K·雷迪
G·张
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN102199399A publication Critical patent/CN102199399A/zh
Application granted granted Critical
Publication of CN102199399B publication Critical patent/CN102199399B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201110072210.8A 2010-03-16 2011-03-16 对包含多晶硅、氧化硅和氮化硅的基片进行抛光的方法 Expired - Fee Related CN102199399B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/724,685 2010-03-16
US12/724,685 US8491808B2 (en) 2010-03-16 2010-03-16 Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride

Publications (2)

Publication Number Publication Date
CN102199399A CN102199399A (zh) 2011-09-28
CN102199399B true CN102199399B (zh) 2014-04-02

Family

ID=44558416

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110072210.8A Expired - Fee Related CN102199399B (zh) 2010-03-16 2011-03-16 对包含多晶硅、氧化硅和氮化硅的基片进行抛光的方法

Country Status (7)

Country Link
US (1) US8491808B2 (https=)
JP (1) JP5957777B2 (https=)
KR (1) KR101672811B1 (https=)
CN (1) CN102199399B (https=)
DE (1) DE102011013981A1 (https=)
FR (1) FR2957548B1 (https=)
TW (1) TWI500750B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
US8496843B2 (en) * 2010-03-16 2013-07-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
EP2613910A4 (en) * 2010-09-08 2017-12-13 Basf Se Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films
KR101340551B1 (ko) * 2010-12-31 2013-12-11 제일모직주식회사 질화규소를 선택적으로 연마하는 ｃｍｐ 슬러리 조성물
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
CN107030583A (zh) * 2017-03-21 2017-08-11 天津华海清科机电科技有限公司 硅衬底片抛光方法和装置
US20190085205A1 (en) * 2017-09-15 2019-03-21 Cabot Microelectronics Corporation NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
CN109971356B (zh) 2017-12-27 2025-10-28 安集微电子（上海）有限公司 一种化学机械抛光液
JP7120846B2 (ja) * 2018-08-10 2022-08-17 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法
US10763119B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US10759970B2 (en) * 2018-12-19 2020-09-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
JP7803851B2 (ja) * 2019-09-04 2026-01-21 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー ポリシリコンｃｍｐ用組成物および方法
US11680186B2 (en) 2020-11-06 2023-06-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same

Family Cites Families (18)

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US3457107A (en) * 1965-07-20 1969-07-22 Diversey Corp Method and composition for chemically polishing metals
US4283321A (en) * 1979-10-03 1981-08-11 Gaf Corporation Alkyl aryl ethyleneoxy sulfonate surfactants for vinyl acetate polymerization
KR100378180B1 (ko) * 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
US6743683B2 (en) * 2001-12-04 2004-06-01 Intel Corporation Polysilicon opening polish
US7201647B2 (en) * 2002-06-07 2007-04-10 Praxair Technology, Inc. Subpad having robust, sealed edges
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
JP2005347737A (ja) * 2004-05-07 2005-12-15 Nissan Chem Ind Ltd シリコンウェハー用研磨組成物
KR100591719B1 (ko) * 2004-11-09 2006-06-22 삼성전자주식회사 에피텍셜 콘택 플러그 제조방법, 그 제조 방법을 이용한반도체 장치 제조 방법 및 그 제조 방법을 이용한 더블스택형 트랜지스터 제조 방법
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
JP5467804B2 (ja) * 2008-07-11 2014-04-09 富士フイルム株式会社 窒化ケイ素用研磨液及び研磨方法
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
US8496843B2 (en) * 2010-03-16 2013-07-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride

Also Published As

Publication number Publication date
US8491808B2 (en) 2013-07-23
KR101672811B1 (ko) 2016-11-04
DE102011013981A1 (de) 2014-02-13
FR2957548B1 (fr) 2015-07-03
FR2957548A1 (fr) 2011-09-23
JP5957777B2 (ja) 2016-07-27
JP2011205096A (ja) 2011-10-13
CN102199399A (zh) 2011-09-28
TWI500750B (zh) 2015-09-21
US20110230048A1 (en) 2011-09-22
KR20110104443A (ko) 2011-09-22
TW201139636A (en) 2011-11-16

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Granted publication date: 20140402

Termination date: 20200316