CN102194973A - Ultraviolet LED packaging structure and wafer-grade packaging method thereof - Google Patents
Ultraviolet LED packaging structure and wafer-grade packaging method thereof Download PDFInfo
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- CN102194973A CN102194973A CN201019050029XA CN201019050029A CN102194973A CN 102194973 A CN102194973 A CN 102194973A CN 201019050029X A CN201019050029X A CN 201019050029XA CN 201019050029 A CN201019050029 A CN 201019050029A CN 102194973 A CN102194973 A CN 102194973A
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Abstract
The invention discloses an ultraviolet LED packaging structure comprising a packaging substrate, an LED chip arranged on the upper surface of the packaging substrate and a packaging lens packaged on the LED chip, wherein the upper surface of the packaging substrate is provided with a concave cup for accommodating the LED chip, electric-conducting through holes are arranged at the bottom of the concave cup and are filled with through hole electrodes connected with the LED chip, the number of the through hole electrodes is same as that of the electric-conducting through holes, the wall of the concave cup is further provided with a bonding structure for bonding the packaging lens, and the bonding structure comprises a local heating loop and a hermetic bonding substance covering outside the local heating loop. The LED packaging structure disclosed by the invention realizes hermetic packaging by the bonding structure and is particularly suitable for working under severe environments with high humidity and the like, and the local heating loop is electrified for local heating to prevent damage to the chip due to heating, so that the hermetic reliability of a device is realized. The invention simultaneously provides a wafer-grade packaging method of the ultraviolet LED packaging structure, the wafer-grade manufacturing method has a simple technological process, can be used for effectively increasing the production efficiency of devices and is beneficial to complete cost reduction.
Description
Technical field
The present invention relates to the LED encapsulation field, relate in particular to a kind of ultraviolet LED encapsulating structure and wafer-level packaging method thereof.
Background technology
Packaging technology is a most important later stage technology in the semiconductor device manufacturing process, and the quality of method for packing directly produces great influence for the performance of semiconductor device.With respect to light source commonly used, light-emitting diode (LED) is the solid luminescent light source (solid-state lighting) that has application potential at present most.Yet for the performance of LED device, the encapsulating structure of led chip and technology thereof have but restricted LED device luminous efficiency and the life-span in use to a great extent.
Traditional is in the LED packaging technology of base plate for packaging with the Silicon Wafer, earlier the monoblock wafer is cut into individual devices, then to each independently chip carry out packaging and testing, be called modular encapsulation (componentlevel packaging) mode.Owing to adopt this mode of led chip being carried out individual packages and debugging, not only existing production process repeats numerous and diverse, technology takes length, be not easy to the problem of mass industrialized production, and the encapsulation condition between each sheet individual chips is difficult to realize impartial, causes the consistency of device parameters relatively poor.
LED wafer-level packaging technology is on the monoblock wafer, all led chip unit are carried out unified packaging and testing after, just cut into the encapsulation technology of independent finished products device.Use this encapsulation technology, the encapsulation and the manufacturing of chip can be combined together.The process reasonable structural design can reach with the micro-processing technology of standard makes raising industrial production efficient and device parameters benefits on uniformity in batches.
Another key factor that influences LED device luminous efficiency and life-span is the employed material of encapsulation.At present common LED encapsulation all is to use organic resin material (as epoxy resin) to come independent chip is carried out the interstitial type encapsulation.In long-term use, the effect of light, heat, electricity, power etc. often makes organic material serious aging phenomenon occur, and this has greatly influenced the task performance of LED device.Especially under short wavelengths' such as near ultraviolet, ultraviolet, deep ultraviolet the LED illumination, the organic material quick aging.Therefore this material system is difficult to use in the encapsulation of ultraviolet LED chip, can not satisfy and use the ultraviolet LED chip to excite RGB fluorescent material to obtain the encapsulation trend of white light source.Though report has been arranged to be pointed out: insert the ultraviolet light and aging problem that inorganic nano material can delay organic material to a certain extent.But this does not fundamentally solve the problem that exists on the material system.Even more noteworthy, from the angle of encapsulating material sealing, the encapsulation of organic compound material is not an air-tightness (hermetic).This greatest problem that causes is that extraneous steam invades chip surface easily, can directly cause the reduction of device performance or the reliability of device is seriously descended.This is for using in the particularly significant of the LED of high humidity environment or underwater operation device.
Therefore, select suitable stablely to heat, power effect, especially having good encapsulating material of strong ageing resistance by ultraviolet light and air-tightness and the corresponding encapsulating structure of design is the important topic that following LED uses.
Summary of the invention
At the shortcoming of prior art, the purpose of this invention is to provide a kind of novel ultraviolet LED encapsulating structure with good hermetic properties, realize the airtight reliability of device, the present invention provides the technical process that realizes above-mentioned encapsulating structure simultaneously.
Further aim of the present invention provides a kind of ultraviolet LED encapsulating structure of anti-ultraviolet ageing.And improve LED device production efficient by the mode of wafer-level packaging.
For achieving the above object, technical scheme of the present invention is:
A kind of ultraviolet LED encapsulating structure, comprise base plate for packaging, place the led chip of base plate for packaging upper surface, and be packaged in package lens on the led chip, described base plate for packaging upper surface is provided with the recessed cup that is used to hold led chip, be provided with conductive through hole in described recessed cup bottom, in conductive through hole, be filled with and through hole electrode that quantity with it identical that link to each other with the led chip electrode, also be provided with the structure of cohering that is used to cohere package lens on described recessed wall of cup, the described structure of cohering comprises the localized heating loop and is wrapped in its outside airproof and coheres material.Utilize the structure of this recessed cup, led chip is packaged between base plate for packaging and the package lens airtightly, realizes that by the designed structure of cohering the localized heating of airproof being cohered material is used for encapsulation, in the time of can preventing whole heating process like this, to the infringement of chip, and improve reliability.The airtight concrete application that contacts the air-tight packaging that realizes being used for the ultraviolet LED chip that utilizes package lens and base plate for packaging also is adapted to work under the adverse circumstances such as high humility simultaneously.
Described base plate for packaging and the corresponding position of local heating circuit also are provided with insulating barrier, and described package lens is a quartz glass.Between localized heating loop and base plate for packaging, be provided with insulating barrier, after avoiding localized heating loop making current, to the influence of base plate for packaging generation.
Described through hole electrode material is Au, and Ag, Al, Ti, Ni, Cu, Pt, Cr, any metal or alloy among the W, described conductive through hole are the rounded or square vertical stratification of cross section that anisotropic etching becomes.
Described recessed cup is the double-deck recessed cup that recessed cup of individual layer or wall of cup are provided with step, and described localized heating loop material is polysilicon or W, and it is SixNy or SiC that described airproof coheres material.Here,, carry out localized heating, avoided the damage of heat chip by making current in the localized heating loop.Be provided with ledge structure in the double-deck recessed cup, like this,, have more good air-tightness energy by being arranged on the structure of cohering on the step.
Described led chip is an inverted structure, and its chip electrode is welded on respectively on the described through hole electrode.
Described led chip is a horizontal structure, and it is fixed in the non-electrode position in described recessed cup bottom, and the chip electrode on the led chip is connected on the described through hole electrode by gold thread.
The chip electrode of described led chip is a up-down structure, and led chip is fixed on the through hole electrode, and another led chip electrode links to each other with another through hole electrode by gold thread.
According to the structure of different types of led chip, and the difference of the position of chip electrode, design different and connected mode through hole electrode.
A kind of wafer scale manufacture method of ultraviolet LED encapsulating structure may further comprise the steps:
A, base plate for packaging is carried out thermal oxidation technology handle, generate SiO in the base plate for packaging upper and lower surface
2Layer;
B, wet etching SiO
2Form mask, etching forms recessed cup array, and etching forms conductive through hole in recessed cup bottom;
C, cohere material at recessed wall of cup depositing insulating layer successively, localized heating loop and airproof;
D, in conductive through hole, form through hole electrode;
E, welding led chip are finished the gold thread bonding;
F, place package lens on the structure cohering, switch on to the localized heating loop;
G, with the section of each led chip unit group.
Among the step B, adopt the method for the anisotropic wet etch of silicon to form recessed cup array, adopt wet method anisotropy or dry isotropic etch to form conductive through hole; Among the step C, described deposition process is a vapour deposition process; Among the step D, adopt the method for physical vapour deposition (PVD) metal or plating or chemical plating or solder reflow to form through hole electrode.
Between step C and D, further comprising the steps of:
H, the method for utilizing vapour deposition cover dielectric isolation layer at recessed cup inwall, conductive through hole inwall and base plate for packaging lower surface;
I, on the dielectric isolation layer of recessed cup inwall, the zone outside led chip and the chip electrode thereof utilizes the method for electroplating Ag to form optical reflecting layer.Such design is in order to strengthen the reflection characteristic of recessed cup inwall.
Compared with prior art, the present invention has following beneficial effect: the ultraviolet LED encapsulating structure with good hermetic properties provided by the invention, the structure of cohering that utilization is arranged between base plate for packaging and the package lens realizes the airproof encapsulation, this encapsulating structure especially is adapted to work under the adverse circumstances such as high humility, described airproof encapsulating structure comprises the localized heating loop and is wrapped in its outside airproof and coheres material, thereby by localized heating that local heating circuit is switched on, avoided the damage of heat to chip, also making airproof cohere material plays a role and plays the effect of sticking to package lens, realize the airtight reliability of device, secondly, employing thoroughly the material of ultraviolet light as package lens, as quartz glass, solve the ultraviolet light and aging problem of encapsulating material, the present invention provides the process route of realizing above-mentioned encapsulating structure simultaneously, adopt wafer-level packaging method to realize that airproof combines between silicon base plate for packaging and the package lens, technical process is simple, can effectively improve device production efficient, fully reduce cost.
Description of drawings
Fig. 1 is the ultraviolet LED encapsulating structure schematic diagram of the recessed cup of individual layer;
Fig. 2 is the ultraviolet LED encapsulating structure schematic diagram of double-deck recessed cup;
Fig. 3 is the ultraviolet LED encapsulating structure schematic diagram that has the box dam structure;
Fig. 4 is the process chart of the wafer scale manufacture method of ultraviolet LED encapsulating structure;
Fig. 5 is localized heating loop circuit figure;
Fig. 6 is the test circuit circuit diagram of base plate for packaging lower surface.
1, base plate for packaging; 2, insulating barrier; 3, airproof coheres material; 4, localized heating loop; 5, through hole electrode; 6, led chip; 7, package lens; 8, recessed cup; 9, conductive through hole; 10, cohere structure; 11, SiO
2The box dam structure.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail, should be appreciated that embodiment described herein only is in order to explaining example of the present invention, and be not used in qualification the present invention.The present invention adopts the SixNy of vapour deposition as binding material, has realized that with wafer-level packaging method airproof combines between silicon base plate for packaging and the package lens.Secondly, employing thoroughly the material of ultraviolet light as package lens, as quartz glass, the ultraviolet light and aging problem of solution encapsulating material, and a kind of encapsulating structure of following ultraviolet LED excited white light is provided.And in realizing the process that silicon base plate for packaging and package lens are cohered,, carry out localized heating by galvanization in the localized heating loop, avoided the damage of heat to chip.
Embodiment one
As shown in Figure 1, be the recessed cup of the individual layer in present embodiment wafer scale ultraviolet LED encapsulating structure, comprise base plate for packaging 1, place the led chip 6 of base plate for packaging 1 upper surface, and be packaged in package lens 7 on the led chip 6, base plate for packaging 1 upper surface is provided with the recessed cup 8 that is used to hold led chip 6, be provided with two conductive through holes 9 in described recessed cup 8 bottoms, in conductive through hole 9, be filled with two through hole electrodes 5 that link to each other with led chip 6 electrodes, on described recessed cup 8 walls, also be provided be used to cohere package lens cohere structure 10, the described structure 10 of cohering comprises localized heating loop 4 and is wrapped in its outside airproof and coheres material 3, in addition, also be provided with insulating barrier 2 in localized heating loop 4 and base plate for packaging 1 corresponding position, the package lens 7 here is a quartz glass, in the present embodiment, led chip is an inverted structure, and two chip electrode is welded on respectively on two through hole electrodes 5.In the actual package process, only need be by localized heating loop 4 galvanizations in cohering structure 10, and then airproof is cohered material 3 carry out localized heating, can realize that package lens 7 is connected with the airproof of base plate for packaging 1.
Here base plate for packaging 1 is (100) monocrystalline silicon disk, and the material of through hole electrode 5 is Au, Ag, and Al, Ti, Ni, Cu, Pt, Cr, any metal or alloy among the W is perhaps directly used solder reflow (reflow) to fill and is formed through hole electrode.
And the rounded or square vertical stratification of cross section that conductive through hole 9 becomes for anisotropic etching.The material in localized heating loop 4 is polysilicon or W, and insulating barrier 2 is fine and close thermal oxidation SiO
2Film, the perhaps SixNy insulation film of chemical vapor deposition (CVD), airproof cohere material 3 and are SixNy or SiC.
As shown in Figure 2, be the ultraviolet LED encapsulating structure of the recessed cup structure of bilayer, promptly be etched into the structure of step-like wall of cup on the basis of the recessed cup of original individual layer, cohere structure and be arranged on the step place this moment.
As shown in Figure 3, on the basis of Fig. 1, place for the ease of the aligning of package lens 7, at the enough thick SiO of rim deposit one deck of each basic encapsulation unit
2 Box dam structure 11 is beneficial to actual operation.
Embodiment two
Present embodiment and embodiment 1 are similar, and difference is that led chip 6 is a horizontal structure, and it is fixed in the non-electrode position of described recessed cup 8 bottoms, and two chip 6 electrodes on the led chip 6 are connected on described two through hole electrodes 5 by gold thread.
Embodiment three
Present embodiment is similar with embodiment 2, and difference is that two chip electrodes of led chip are up-down structure, and led chip is fixed on the through hole electrode, and another chip electrode links to each other with another through hole electrode by gold thread.
Embodiment four
Below in conjunction with accompanying drawing, the wafer scale manufacture method of a kind of wafer scale ultraviolet LED encapsulating structure of the present invention is described in detail, be that example illustrates only here, as shown in Figure 4 with single led chip unit.
A, shown in Fig. 4 (a), used thickness is that (100) P type twin polishing monocrystalline silicon disk of 400-600 micron is as base plate for packaging 1.Adopt the technology of dried oxygen thermal oxidation in smelting furnace, generating thickness on two surfaces about silicon wafer is the SiO of the densification of 53-80 nanometer
2Oxide layer.
B, shown in Fig. 4 (b), use eurymeric photoresist mask technique, use to contain BOE (BufferedOxide Etch) solution of HF acid to SiO
2Oxide layer is done graphical treatment.And with patterned SiO
2Make mask, utilize KOH solution, anisotropic wet etch silicon wafer, the array of structures of the recessed cup 8 of formation wafer-level packaging, the degree of depth of recessed cup 8 is about the 240-360 micron, and then adopts wet etching (anisotropy/isotropic) or DRIE etching to form conductive through hole 9.
C, shown in Fig. 4 (c), (d), utilize the mask wet etching make the part SiO
2Film is etched up to the upper epidermis of base plate for packaging, remaining SiO
2The insulating barrier 2 in the structure is cohered in formation.Then, utilize the localized heating loop 4 of pecvd process deposit thickness, after the energising, can produce a large amount of heats for the polysilicon or the metal W of 30-40 micron.
Shown in Fig. 4 (e), (f), utilize the binding material of the method for chemical vapour deposition (CVD) at 4 both sides, localized heating loop deposition SixNy or SiC, promptly utilize pecvd process deposition airproof to cohere material 3, after this in order to realize the insulation between through hole electrode 5 and the base plate for packaging 1, guarantee the insulation isolation of recessed cup 8 inwalls, base plate for packaging 1 lower surface test circuit, utilize pecvd process on conductive through hole 9 surfaces, recessed cup 8 inwalls deposition SiO
2Insulating barrier (figure slightly).In addition, also to form aligning and place the used SiO of capping medium at the silicon wafer upper surface
2 Box dam structure 11.
In order to strengthen the reflection characteristic of recessed cup 8 inwalls, adopt the lift-off technology (liftoff) of eurymeric photoresist, utilize electric plating method on the insulating barrier of recessed cup 8 inwalls, the thin Ag optical reflecting layer of one deck is electroplated in the zone outside led chip and the electrode thereof.
D, shown in Fig. 4 (g), utilize the SixNy material of pecvd process deposit thickness for the 30-40 micron, form through hole electrode 5 or adopt the method for physical vapour deposition (PVD) metal or plating or chemical plating or solder reflow to form through hole electrode 5.
E, utilize electric plating method to electroplate the face packaging and testing circuit (figure slightly) of Cu at the base plate for packaging lower surface; Shown in Fig. 4 (g), at the inner utilization lead-free solder or the eutectic solder of recessed cup that led chip 6 is solid brilliant in recessed cup 8 bottoms, carry out the gold thread bonding then.Specifically, for the led chip of upper/lower electrode, led chip 6 is solid brilliant on a through hole electrode, and another electrode of led chip is connected on another through hole electrode of recessed cup bottom surface by gold thread.For the led chip of horizontal structure, chip is solid brilliant in the non-electrode position in recessed cup bottom, and two electrodes on the chip are connected on two through hole electrodes of recessed cup 8 bottoms with gold thread respectively.For the led chip of inverted structure, two electrodes of chip are welded on respectively on two through hole electrodes of recessed cup 8 bottoms.
F, shown in Fig. 4 (h), do package lens 7 with the quartz glass of ultraviolet light thoroughly, quartz glass is positioned over coheres on the structure 10, to local heating circuit 4 energisings, make package lens 7 and base plate for packaging 1 cohere material 3 and carry out air-tightness and cohere by airproof.
G, be sliced into each chip unit group as required, the conduction of improving chip connects and concrete test performance.
More than a kind of ultraviolet LED encapsulating structure provided by the present invention and wafer-level packaging method are described in detail, for one of ordinary skill in the art, thought according to the embodiment of the invention, the part that all can change in specific embodiments and applications, this description should not be construed as limitation of the present invention.
Claims (10)
1. ultraviolet LED encapsulating structure, comprise base plate for packaging, place the led chip of base plate for packaging upper surface, and be packaged in package lens on the led chip, it is characterized in that: described base plate for packaging upper surface is provided with the recessed cup that is used to hold led chip, be provided with conductive through hole in described recessed cup bottom, in conductive through hole, be filled with and through hole electrode that quantity with it identical that link to each other with the led chip electrode, also be provided with the structure of cohering that is used to cohere package lens on described recessed wall of cup, the described structure of cohering comprises the localized heating loop and is wrapped in its outside airproof and coheres material.
2. ultraviolet LED encapsulating structure according to claim 1 is characterized in that: on the described base plate for packaging and the corresponding position of local heating circuit also is provided with insulating barrier, and described package lens is a quartz glass.
3. ultraviolet LED encapsulating structure according to claim 1 is characterized in that: described through hole electrode material is Au, Ag, Al, Ti, Ni, Cu, Pt, Cr, any metal or alloy among the W, described conductive through hole are the rounded or square vertical stratification of cross section that anisotropic etching becomes.
4. ultraviolet LED encapsulating structure according to claim 1 is characterized in that: described recessed cup is the double-deck recessed cup that recessed cup of individual layer or wall of cup are provided with step, and described localized heating loop material is polysilicon or W, and it is Si that described airproof coheres material
xN
yOr SiC.
5. according to each described ultraviolet LED encapsulating structure of claim 1 to 4, it is characterized in that: described led chip is an inverted structure, and its chip electrode is welded on respectively on the described through hole electrode.
6. according to each described ultraviolet LED encapsulating structure of claim 1 to 4, it is characterized in that: described led chip is a horizontal structure, it is fixed in the non-electrode position in described recessed cup bottom, and the chip electrode on the led chip is connected on the described through hole electrode by gold thread.
7. according to each described ultraviolet LED encapsulating structure of claim 1 to 4, it is characterized in that: the chip electrode of described led chip is a up-down structure, led chip is fixed on the through hole electrode, and another led chip electrode links to each other with another through hole electrode by gold thread.
8. the wafer scale manufacture method of an a kind of ultraviolet LED encapsulating structure as claimed in claim 2 is characterized in that: may further comprise the steps:
A, base plate for packaging is carried out thermal oxidation technology handle, generate SiO in the base plate for packaging upper and lower surface
2Layer;
B, wet etching SiO
2Form mask, etching forms recessed cup array, and etching forms conductive through hole in recessed cup bottom;
C, cohere material at recessed wall of cup depositing insulating layer successively, localized heating loop and airproof;
D, in conductive through hole, form through hole electrode;
E, welding led chip are finished the gold thread bonding;
F, cohere at airproof and to place package lens on the structure, switch on to the localized heating loop;
G, with the section of each led chip unit group.
9. the wafer scale manufacture method of ultraviolet LED encapsulating structure according to claim 8, it is characterized in that: among the step B, adopt the method for the anisotropic wet etch of Si to form recessed cup array, adopt wet method anisotropy or dry isotropic etch to form conductive through hole; Among the step C, described deposition process is a vapour deposition process; Among the step D, adopt the method for physical vapour deposition (PVD) metal or plating or chemical plating or solder reflow to form through hole electrode.
10. the wafer scale manufacture method of ultraviolet LED encapsulating structure according to claim 8 is characterized in that: between step C and D, further comprising the steps of:
H, the method for utilizing vapour deposition cover dielectric isolation layer at recessed cup inwall, conductive through hole inwall and base plate for packaging lower surface;
I, on the dielectric isolation layer of recessed cup inwall, the zone outside led chip and the chip electrode thereof utilizes the method for electroplating Ag to form optical reflecting layer.
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| CN201019050029.XA CN102194973B (en) | 2010-02-02 | 2010-02-02 | Wafer-grade packaging method of ultraviolet LED packaging structure |
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|---|---|---|---|
| CN201019050029.XA CN102194973B (en) | 2010-02-02 | 2010-02-02 | Wafer-grade packaging method of ultraviolet LED packaging structure |
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| CN103187508A (en) * | 2011-12-31 | 2013-07-03 | 刘胜 | Size encapsulation structure and encapsulation technology of light-emitting diode (LED) wafer level chip |
| CN103489995A (en) * | 2013-10-16 | 2014-01-01 | 福州圆点光电技术有限公司 | Flexible LED (light-emitting diode) light source filament |
| CN103681619A (en) * | 2013-12-18 | 2014-03-26 | 中国电子科技集团公司第五十八研究所 | Silicon substrate air-impermeability sealing structure and manufacturing method thereof |
| CN105565248A (en) * | 2016-02-23 | 2016-05-11 | 美新半导体（无锡）有限公司 | Airtight package structure with cavity device and manufacturing method thereof |
| CN106571418A (en) * | 2015-10-08 | 2017-04-19 | 世迈克琉明有限公司 | Semiconductor light emitting device |
| CN106684227A (en) * | 2016-12-30 | 2017-05-17 | 江苏稳润光电有限公司 | Ultraviolet LED package method |
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