CN102193303B - 光学邻近修正方法 - Google Patents
光学邻近修正方法 Download PDFInfo
- Publication number
- CN102193303B CN102193303B CN2010101188414A CN201010118841A CN102193303B CN 102193303 B CN102193303 B CN 102193303B CN 2010101188414 A CN2010101188414 A CN 2010101188414A CN 201010118841 A CN201010118841 A CN 201010118841A CN 102193303 B CN102193303 B CN 102193303B
- Authority
- CN
- China
- Prior art keywords
- correction
- exposed
- district
- weakness
- optical proximity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (6)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101188414A CN102193303B (zh) | 2010-03-05 | 2010-03-05 | 光学邻近修正方法 |
US13/035,900 US8541147B2 (en) | 2010-03-05 | 2011-02-25 | System and method of selective optical pattern enhancement for semiconductor manufacturing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101188414A CN102193303B (zh) | 2010-03-05 | 2010-03-05 | 光学邻近修正方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102193303A CN102193303A (zh) | 2011-09-21 |
CN102193303B true CN102193303B (zh) | 2013-07-17 |
Family
ID=44531655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101188414A Active CN102193303B (zh) | 2010-03-05 | 2010-03-05 | 光学邻近修正方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8541147B2 (zh) |
CN (1) | CN102193303B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103186032B (zh) * | 2011-12-31 | 2016-01-13 | 无锡华润上华科技有限公司 | 光学邻近效应修正方法及相应的掩膜图形形成方法 |
CN104183513B (zh) * | 2013-05-21 | 2018-05-04 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的检测方法 |
CN104714362A (zh) * | 2013-12-17 | 2015-06-17 | 中芯国际集成电路制造(北京)有限公司 | 一种光学临近修正的方法 |
CN104752169B (zh) * | 2013-12-30 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | 掩膜图形的形成方法 |
CN103901714A (zh) * | 2014-03-24 | 2014-07-02 | 上海华力微电子有限公司 | 提高光刻工艺窗口的光学临近修正处理方法 |
CN106033172B (zh) * | 2015-03-19 | 2019-12-17 | 中芯国际集成电路制造(上海)有限公司 | 用于光学邻近修正修复的方法 |
CN106933028B (zh) * | 2015-12-31 | 2020-06-09 | 中芯国际集成电路制造(上海)有限公司 | 掩膜版图形的修正方法 |
JP2018107235A (ja) | 2016-12-26 | 2018-07-05 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
CN109426083B (zh) | 2017-08-24 | 2020-11-27 | 中芯国际集成电路制造(上海)有限公司 | 光刻工艺的优化方法及其优化系统和光刻方法 |
CN107505811B (zh) * | 2017-09-11 | 2020-05-05 | 深圳市华星光电技术有限公司 | 光罩 |
US10481487B2 (en) | 2017-09-11 | 2019-11-19 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Mask |
CN113109991A (zh) * | 2020-01-09 | 2021-07-13 | 中芯国际集成电路制造(上海)有限公司 | 目标版图的修正方法及掩膜版版图的形成方法 |
CN113848678B (zh) * | 2021-09-23 | 2024-02-27 | 武汉新芯集成电路制造有限公司 | 掩膜版及其制造方法、半导体器件的制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005073807A1 (en) * | 2004-01-29 | 2005-08-11 | Kla-Tencor Technologies Corporation | Computer-implemented methods for detecting defects in reticle design data |
CN1770008A (zh) * | 2004-11-03 | 2006-05-10 | 国际商业机器公司 | 修正光刻掩膜中缺陷的方法和装置 |
WO2008078213A1 (en) * | 2006-12-21 | 2008-07-03 | Nxp B.V. | A method and system for identifying weak points in an integrated circuit design |
CN101452204A (zh) * | 2007-11-28 | 2009-06-10 | 上海华虹Nec电子有限公司 | 权重式测距的规则光学临近修正的方法 |
CN101458446A (zh) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | 光学临近修正、光掩模版制作及图形化方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6613485B2 (en) * | 1999-11-18 | 2003-09-02 | United Microelectronics Crop. | Optical proximity correction of pattern on photoresist through spacing of sub patterns |
DE10042929A1 (de) * | 2000-08-31 | 2002-03-21 | Infineon Technologies Ag | OPC-Verfahren zum Erzeugen von korrigierten Mustern für eine Phasensprungmaske und deren Trimmmaske sowie zugehörige Vorrichtung und integrierte Schaltungsstruktur |
US6711732B1 (en) * | 2002-07-26 | 2004-03-23 | Taiwan Semiconductor Manufacturing Company | Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era |
KR100877105B1 (ko) * | 2007-06-27 | 2009-01-07 | 주식회사 하이닉스반도체 | 반도체소자의 패턴 검증 방법 |
CN101625521B (zh) | 2008-07-08 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | 光学邻近修正方法 |
-
2010
- 2010-03-05 CN CN2010101188414A patent/CN102193303B/zh active Active
-
2011
- 2011-02-25 US US13/035,900 patent/US8541147B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005073807A1 (en) * | 2004-01-29 | 2005-08-11 | Kla-Tencor Technologies Corporation | Computer-implemented methods for detecting defects in reticle design data |
CN1770008A (zh) * | 2004-11-03 | 2006-05-10 | 国际商业机器公司 | 修正光刻掩膜中缺陷的方法和装置 |
WO2008078213A1 (en) * | 2006-12-21 | 2008-07-03 | Nxp B.V. | A method and system for identifying weak points in an integrated circuit design |
CN101452204A (zh) * | 2007-11-28 | 2009-06-10 | 上海华虹Nec电子有限公司 | 权重式测距的规则光学临近修正的方法 |
CN101458446A (zh) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | 光学临近修正、光掩模版制作及图形化方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110217660A1 (en) | 2011-09-08 |
CN102193303A (zh) | 2011-09-21 |
US8541147B2 (en) | 2013-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102193303B (zh) | 光学邻近修正方法 | |
TWI463246B (zh) | 半導體裝置及其製造方法,暨半導體製造用遮罩及光近接處理方法 | |
CN101295129B (zh) | 光学近距修正的方法 | |
US20090146259A1 (en) | Sub-Resolution Assist Feature To Improve Symmetry for Contact Hole Lithography | |
CN103186030B (zh) | 光学邻近修正方法 | |
US8975195B2 (en) | Methods for optical proximity correction in the design and fabrication of integrated circuits | |
US10366973B2 (en) | Layout modification method for exposure manufacturing process | |
CN107797375A (zh) | 目标图形的修正方法 | |
US7807343B2 (en) | EDA methodology for extending ghost feature beyond notched active to improve adjacent gate CD control using a two-print-two-etch approach | |
CN105093809B (zh) | 增强光刻工艺窗口的光学邻近修正方法 | |
CN101726991A (zh) | 光学临近修正的测试方法及光掩模版制造方法 | |
CN109828433A (zh) | 校正掩模布局的方法和使用其制造半导体器件的方法 | |
CN103592817A (zh) | 光学邻近修正方法 | |
CN102117010A (zh) | 一种光学邻近修正方法 | |
CN107490932A (zh) | 掩膜版图形的修正方法 | |
CN103163727A (zh) | 一种掩膜图案的修正方法 | |
CN103339711B (zh) | 成像装置、其形成方法以及形成半导体装置结构的方法 | |
CN106707681B (zh) | 一种增强opc处理精度的方法 | |
US7455938B2 (en) | Methods of forming patterns in substrates | |
CN101893821B (zh) | 对数据库进行光学邻近修正的方法 | |
Su et al. | SRAF rule extraction and insertion based on inverse lithography technology | |
CN113109991A (zh) | 目标版图的修正方法及掩膜版版图的形成方法 | |
CN101458444B (zh) | 制作光掩模版及图形化的方法 | |
JP2023052499A (ja) | パターン算出装置、パターン算出方法、マスク、露光装置、デバイス製造方法、コンピュータプログラム、及び、記録媒体 | |
TW201944168A (zh) | 光罩以及形成圖案的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121102 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121102 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |