CN102187443A - 引线焊接方法以及半导体装置 - Google Patents

引线焊接方法以及半导体装置 Download PDF

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CN102187443A
CN102187443A CN2008801316254A CN200880131625A CN102187443A CN 102187443 A CN102187443 A CN 102187443A CN 2008801316254 A CN2008801316254 A CN 2008801316254A CN 200880131625 A CN200880131625 A CN 200880131625A CN 102187443 A CN102187443 A CN 102187443A
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pad
capillary
lead
wire
ball neck
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CN102187443B (zh
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三井竜成
鄭森介
木内逸人
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Shinkawa Ltd
Arakawa Co Ltd
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Abstract

在引线焊接方法中，使得初始球接合在焊接点(13)形成压焊球(23)及球颈(25)后，使得毛细管(41)上升，接着，使得毛细管(41)向着与引脚(17)相反方向移动后，使得毛细管(41)下降，用引脚(17)侧的面部(43)压塌球颈(25)。此后，使得毛细管(41)上升，使得毛细管(41)向着引脚(17)移动，直到毛细管(41)的面部(43)来到球颈(25)上方，向着引脚(17)折返引线(21)，此后，使得毛细管(41)下降，用毛细管(41)推压折返在压塌的球颈(25)上的引线侧面，使得毛细管(41)向着引脚(17)朝斜上方移动后，使得毛细管(41)成环，将引线(21)压焊在引脚(17)上接合。由此，使得引线环高度更低。

Description

引线焊接方法以及半导体装置
技术领域
本发明涉及用引线连接第一焊接点及第二焊接点的引线焊接方法，以及具有用引线连接第一焊接点及第二焊接点的引线环形状的半导体装置。
背景技术
在半导体装置的组装中使用由金属细线连接安装在引脚框的半导体芯片的焊接点(pad)和引脚框的引脚之间的引线焊接。引线焊接使用引线焊接装置，采用以下方法：最初在引线前端形成初始球，通过毛细管使得该初始球与半导体芯片的焊接点压接，形成压焊球。接着，使得毛细管上升，朝着第二焊接点的相反侧，逆向动作后，进一步使得毛细管上升到所定高度后，使得毛细管朝第二焊接点方向移动，将引线连接到第二焊接点上(例如，参照专利文献1的图4至图6)。
这样，若使得毛细管动作，焊接引线，大多将引线环的形状设为三角形状或梯形形状，所述三角形状包含从压焊在半导体芯片的焊接点的压焊球朝上延伸的引线颈，以及从引线颈向着第二焊接点弯曲的倾斜部分，所述梯形形状包含从引线颈向着第二焊接点大致水平延伸的水平部分，以及从水平部分向着第二焊接点延伸的倾斜部分。这是由于若使得接近压焊球的部分向着第二焊接点朝毛细管的水平方向移动，则有时在移动中在毛细管和金属细线之间产生的摩擦，会对颈部分给与损伤的缘故。
但是，该引线环形状包含从压焊球朝上方立起的引线颈，因此，引线环高度变高，存在不能减小通过引线焊接组装的半导体装置整体的高度或厚度的问题。
于是，提出了以下焊接方法：焊接在第一焊接点后，实行使得毛细管上升若干，朝着与第二焊接点相反侧移动的逆向动作，进一步使得毛细管上升若干，朝着第二焊接点侧移动的前进动作后，使得毛细管下降，将引线颈部分折返压接在压焊球上，将引线延伸方向设为水平或比水平若干上方的位置后，一边从毛细管前端输出引线，一边使得毛细管上升，接着，使得毛细管移动到第二焊接点，将引线连接在第二焊接点(例如，参照专利文献1的图1至图3，或专利文献2的图1至图3)。
[专利文献1]日本特开2004-172477号公报
[专利文献2]日本特开平9-51011号公报
在专利文献1或专利文献2记载的以往技术的焊接方法中，将引线折返在压焊球上后，推压引线，形成头部分，因此，存在头部分的高度并不那么低，有时不能与使得整体的引线环高度更低的要求相对应。
发明内容
于是，本发明的目的在于，在第一焊接点和第二焊接点的连接中，能使得引线环高度更低。
为了解决上述课题的手段如下。
本发明的引线焊接方法为用引线连接第一焊接点和第二焊接点之间，其特征在于，该引线焊接方法包括：
第一焊接工序，由毛细管使得形成在引线前端的初始球接合在第一焊接点，形成压焊球及球颈；
球颈压塌工序，第一焊接工序后，使得毛细管上升，接着，使得毛细管向着与第二焊接点相反方向移动后，使得毛细管下降，用毛细管的第二焊接点侧的面部压塌第二焊接点侧的球颈；
推压工序，球颈压塌工序后，使得毛细管上升，接着，使得毛细管向着第二焊接点移动，直到毛细管的与第二焊接点相反侧的面部来到球颈上方，向着第二焊接点折返引线，此后，使得毛细管下降，用毛细管的与第二焊接点相反侧的面部推压折返在压塌的球颈上的引线侧面；
斜上升工序，推压工序后，使得毛细管向着第二焊接点朝斜上方移动；
第二焊接工序，斜上升工序后，使得毛细管上升，接着，使得毛细管朝着第二焊接点方向移动，通过将引线压焊在第二焊接点上接合。
在本发明的引线焊接方法中，合适的是，球颈压塌工序在第一焊接工序后反复多次实行以下连续动作：使得毛细管上升，接着，使得毛细管向着与第二焊接点相反方向移动后，使得毛细管下降，用毛细管的第二焊接点侧的面部压塌第二焊接点侧的球颈。
又，在本发明的引线焊接方法中，合适的是，在斜上升工序和第二焊接工序之间，包括扭折形成工序，该扭折形成工序使得毛细管上升，接着，至少实行一次使得毛细管朝与第二焊接点相反方向移动的逆向动作，在引线上形成扭折。
本发明的半导体装置具有用引线连接第一焊接点和第二焊接点之间的引线环形状，其特征在于，具有通过以下工序形成的引线环形状：
第一焊接工序，由毛细管使得形成在引线前端的初始球接合在第一焊接点，形成压焊球及球颈；
球颈压塌工序，第一焊接工序后，使得毛细管上升，接着，使得毛细管向着与第二焊接点相反方向移动后，使得毛细管下降，用毛细管的第二焊接点侧的面部压塌第二焊接点侧的球颈；
推压工序，球颈压塌工序后，使得毛细管上升，接着，使得毛细管向着第二焊接点移动，直到毛细管的与第二焊接点相反侧的面部来到球颈上方，向着第二焊接点折返引线，此后，使得毛细管下降，用毛细管的与第二焊接点相反侧的面部推压折返在压塌的球颈上的引线侧面；
斜上升工序，推压工序后，使得毛细管向着第二焊接点朝斜上方移动；
第二焊接工序，斜上升工序后，使得毛细管上升，接着，使得毛细管朝着第二焊接点方向移动，通过将引线压焊在第二焊接点上接合。
又，在本发明的半导体装置中，合适的是，球颈压塌工序在第一焊接工序后反复多次实行以下连续动作：使得毛细管上升，接着，使得毛细管向着与第二焊接点相反方向移动后，使得毛细管下降，用毛细管的第二焊接点侧的面部压塌第二焊接点侧的球颈。
下面说明本发明的效果。
本发明具有在第一焊接点和第二焊接点的连接中，能使得引线环高度更低的效果。
附图说明
图1是表示本发明实施形态的引线焊接方法的压塌工序和推压工序的说明图。
图2是表示本发明实施形态的焊接方法的扭折(kink)形成工序和第二焊接工序以及本发明实施形态的引线环的说明图。
图3是表示本发明实施形态的焊接方法的毛细管前端移动的说明图。
图4是表示本发明另一实施形态的焊接方法的压塌工序的说明图。
图5是表示本发明另一实施形态的焊接方法的毛细管前端的移动的说明图。
符号说明如下：
11半导体芯片
12引脚框
13焊接点
17引脚
20引线环
21引线
23压焊球
25球颈
25a压塌部
25b折曲部
26推压部
26a折返部
27弯曲部
28焊接中心线
34扭折
41毛细管
43面部
45内倒角部
47直孔
具体实施方式
下面，参照图1至图3说明本发明合适的实施形态。如图1及图2所示，本实施形态为连接安装在引脚框12上的半导体芯片11的焊接点13和形成在引脚框12上的引脚17的引线焊接方法，以及具有由该引线焊接方法形成的引线环20的半导体装置。半导体装置形成连接多个焊接点13和引脚17的多个引线环，但在以下说明中，说明一个焊接点13和一个引脚17的连接。半导体芯片11的焊接点13为第一焊接点，引脚框12的引脚17为第二焊接点。在图1中，引脚17图示省略，图中右侧为引脚17侧。又，图3是表示毛细管41前端移动的图线。
首先，实行第一焊接工序，通过毛细管41对形成在引线21前端部的没有图示的初始球进行超声波励振同时推压在焊接点13上接合，在焊接点13上形成压焊球23和球颈25。压焊球23的球形的初始球被毛细管41的面部43压塌或压碎(stamp down)，成为圆板状，初始球的一部分进入毛细管41的内倒角部45及直孔47，形成球颈25，因此，球颈25从压焊球23向着引线21延伸，成为具有与比引线21直径大的毛细管41的直孔47大致相同直径的圆柱形状。当将毛细管41推压在焊接点13上时，毛细管41的前端位于图3所示压焊球23的最上部的点a。
第一焊接工序后，实行图1(a)至图1(c)所示那样的压塌工序。在压塌工序中，如图1(a)所示，输出引线21，同时，使得毛细管41上升，使得毛细管41前端从图3所示点a移动到点b。接着，如图1(b)所示，使得毛细管41朝着与引脚17相反方向移动，直到毛细管41的引脚17侧的面部43来到球颈25的上部，使得毛细管41的前端从图3的点b移动到点c。这时，引线21成为从球颈25向着与引脚17相反的方向倾斜的状态。接着，使得毛细管41的前端从图3所示点c下降到点d，如图1(c)所示，用毛细管41的引脚17侧的面部43压塌球颈25的引脚17侧。通过压塌，圆柱状的球颈25成为比压焊球23直径小若干的圆板状的压塌部25a。压塌部25a的引脚17侧的上面被毛细管41的面部43压塌，因此，成为沿面部43形状的平面状。又，引线21朝着压塌部25a的与引脚17相反侧折曲，同时，成为沿毛细管41的直孔47的与引脚17相反侧的内面向着焊接点13的垂直方向延伸的状态。
接着，实行图1(d)至图1(f)所示那样的推压工序。如图1(d)所示，从毛细管41前端输出引线21，同时，使得毛细管41前端从图3所示点d上升到点e。于是，引线21沿着毛细管41的直孔47直线状输出。接着，使得毛细管41的前端从图3的点e向着引脚17侧移动到点f。于是，如图1(e)所示，通过毛细管41的内倒角部45将引线21朝着引脚17的方向推压，在与压塌部25a连续的折曲部25b被折曲。接着，使得毛细管41朝着引脚17的方向移动，直到毛细管41的位于与引脚17相反侧的面部43来到压焊球23上部的位置。接着，使得毛细管41的前端从图3的点f下降。于是，如图1(f)所示，因毛细管41的下降，引线21的侧面推压在压塌球颈25形成的压塌部25a上。通过该引线21推压，引线21的折曲部25b向着压塌部25a的方向折返，形成折返部26a。引线21的推压部26的焊接点13侧因推压被推压在压塌部25a的上面，推压部26的上面因毛细管41的面部43形成平面。在推压工序结束状态下，毛细管41相对焊接点13的焊接中心线28成为靠向引脚17侧的位置。
当通过毛细管41的面部43将引线21推压在压塌部25a上时，可以与推压同时，使得毛细管41朝着引脚17方向以及与引脚17相反侧的方向往复动作，使得引线21融合在压塌部25a，也可以通过超声波励振一边使得毛细管41前端振动，一边推压引线21。
如图2(a)所示，推压工序后，实行斜上升工序，从毛细管41前端输出引线21，一边使得毛细管41上升，一边使其向着引脚17的方向，从图3所示点g朝斜上方移动到点h。通过该斜上升工序，在引线21形成向着引脚17凸的那样的波形。
如图2(b)所示，斜上升工序后，实行扭折形成工序。扭折形成工序为一边从毛细管41前端输出引线21一边使得毛细管41的前端从图3所示点h上升到点i后，向着与引脚17相反方向实行逆向动作，使得毛细管14的前端从图3的点i移动到点j。通过该移动，在上述推压工序结束时相对焊接点13的焊接中心线28靠向引脚17侧的毛细管41成为与引脚17相反方向的位置。通过该逆向动作，从焊接点13引脚17侧立起的引线21成为向着与引脚17相反方向边弯曲边倾斜的形状。另一方面，毛细管41内的引线21保持为与焊接点13的面大致垂直的方向，因此，在结束逆向动作状态的毛细管41的前端附近的引线21，形成朝着与引脚17相反方向凸的那样的扭折34。
如图2(c)至图2(e)所示，继逆向动作后，接着实行第二焊接工序。若一边输出引线21一边使得毛细管41前端从图3所示点j上升到点k，则如图2(c)所示，在扭折34前端输出引线21。因毛细管41的上升输出的引线21的长度比上述逆向动作时的引线输出长度长。接着，使得毛细管41的前端从图3的点k移动到点m，如图2(d)，图2(e)所示，使得毛细管41向着引脚17成环。通过该成环，扭折34产生更大折曲，成为弯曲部27。又，通过斜上升工序形成在引线21的向着引脚17凸的波形，因成环使得从推压部26向着引脚17延伸的引线21成为朝下凸的弯曲形状。接着，将毛细管41的前端推压在引脚17上，通过使得引线21压焊在引脚17上接合。若引线21接合在引脚17上，则形成连接作为第一焊接点的焊接点13和作为第二焊接点的引脚17的引线环20。若由引线环20连接半导体芯片11的全部焊接点13和引脚框12的全部引脚17之间，则半导体装置组装结束。
在本实施形态的引线焊接方法中，在压塌工序中，用毛细管41的面部43压塌球颈25压低其高度后，折返引线21将引线21的侧面推压在高度变低的压塌部25a上后，使得引线21向着引脚17成环，因此，如图2(e)所示，能使得形成在焊接点13上的半导体装置的引线环20的头高度H1比以往技术公开的环高度低，因此，能使得引线环20的从半导体芯片11的立起高度更低。又，在推压工序中，将引线21的侧面推压在压塌部25a的大致平坦的上面，因此，成环时从推压部26向着引脚17方向延伸的引线21向着上方向弯曲，能抑制推压部26和引脚17之间的引线环20的高度H2变高，能使得引线环20从半导体芯片11立起高度更低。进而，在斜上升工序中，形成在引线21的向着引脚17凸的波形，因成环，在推压部26和引脚17之间的引线21形成朝下凸的弯曲形状，从推压部向着引脚17的引线21向着上方向弯曲，能抑制引线环20的高度H2变高，能抑制引线环20整体的高度，同时，能使得引线环20的整体高度均一低下。在本实施形态中，推压部26不会朝着压焊球23的直径方向鼓出。
上述说明的本实施形态在推压工序后，实行斜上升工序，扭折形成工序，在引线环20形成弯曲部27，但是，当没有焊接点13和引脚17的高度差那样的场合，也可以不进行扭折形成工序，在斜上升工序后实行第二焊接工序，连接焊接点13和引脚17。
参照图4及图5说明本发明另一实施形态。与前面参照图1至图3说明的实施形态相同部分，标以相同符号，说明省略。本实施形态为毛细管41前端变细场合，或使用前端细的毛细管41进行焊接时的引线焊接方法，以及具有由该引线焊接方法形成的引线环的半导体装置。
如图4所示，当毛细管41前端细场合，毛细管41的面部43的面积变小。因此，有时通过一次压塌不能充分地压塌球颈25，引线21的折返部26的高度变高。于是，如图4及图5所示，第一焊接工序后，将毛细管41上升、向与引脚17相反侧的移动、毛细管41下降、压塌球颈的一连串的连续动作反复二次，能充分进行球颈25的压塌。
如图4(a)至图4(c)所示，第一焊接工序后，使得毛细管41上升后，使得毛细管41朝着与引脚17相反方向移动，此后，使得毛细管41下降，通过毛细管41的引脚17侧的面部43，压塌球颈25的引脚17侧。在该动作中，毛细管前端按图5所示的点a、点b、点c、点d移动，从点b向点c的水平方向的移动距离成为如下的移动量：毛细管41的面部43的引脚17侧的侧面相对压焊球23的引脚17侧的侧面，成为稍稍靠向与引脚17相反侧的位置。若这样使得毛细管41水平移动后，使得毛细管41下降压塌球颈25，则能恰好通过毛细管41的引脚17侧的面部43，将球颈25的引脚17侧的上面形成为水平的压塌部25a。
接着，如图4(d)至图4(f)所示，再次使得毛细管41上升，此后，使得毛细管朝着与引脚17相反侧水平移动，再次使得毛细管41下降，通过毛细管41的引脚17侧的面部43，压塌早先通过压塌形成的压塌部25a的位于与引脚17相反侧的球颈25，增多水平的压塌部25a的面积。在该动作中，毛细管前端按图5所示的点d、点b’、点c’、点d’移动。从点b’向点c’的水平方向的移动距离为对于增多水平的压塌部25a的面积必要的移动量。
接着，若压塌工序的二次连续动作结束，则与前面的实施形态相同，如图1(d)至图1(f)所示，使得毛细管41上升后，朝着引脚17侧移动，此后使得毛细管41下降，将引线21推压在压塌部25a上，形成推压部26，使得毛细管41向着引脚17朝着斜上方上升，实行斜上升工序，实行扭折形成工序后，向引脚17进行成环，将引线21焊接在引脚17上。在本实施形态中，推压部26不会朝着压焊球23的直径方向鼓出。
上述说明的实施形态具有与前面说明的实施形态相同的效果，同时，即使前端变细的毛细管41或前端细的毛细管41也能确实地形成低的引线环20。又，在本实施形态中，说明了二次反复实行压塌工序的毛细管41的上升、向与引脚17相反侧的水平移动、下降、压塌的一连串的连续动作，但是，连续动作的反复并不局限于二次，可以根据毛细管41前端大小，多次反复。

Claims (6)

1.一种引线焊接方法，用引线连接第一焊接点和第二焊接点之间，其特征在于，该引线焊接方法包括：
第一焊接工序，由毛细管使得形成在引线前端的初始球接合在第一焊接点，形成压焊球及球颈；
球颈压塌工序，第一焊接工序后，使得毛细管上升，接着，使得毛细管向着与第二焊接点相反方向移动后，使得毛细管下降，用毛细管的第二焊接点侧的面部压塌第二焊接点侧的球颈；
推压工序，球颈压塌工序后，使得毛细管上升，接着，使得毛细管向着第二焊接点移动，直到毛细管的与第二焊接点相反侧的面部来到球颈上方，向着第二焊接点折返引线，此后，使得毛细管下降，用毛细管的与第二焊接点相反侧的面部推压折返在压塌的球颈上的引线侧面；
斜上升工序，推压工序后，使得毛细管向着第二焊接点朝斜上方移动；
第二焊接工序，斜上升工序后，使得毛细管上升，接着，使得毛细管朝着第二焊接点方向移动，通过将引线压焊在第二焊接点上接合。
2.根据权利要求1所述的引线焊接方法，其特征在于：
球颈压塌工序在第一焊接工序后反复多次实行以下连续动作：使得毛细管上升，接着，使得毛细管向着与第二焊接点相反方向移动后，使得毛细管下降，用毛细管的第二焊接点侧的面部压塌第二焊接点侧的球颈。
3.根据权利要求1所述的引线焊接方法，其特征在于：
在斜上升工序和第二焊接工序之间，包括扭折形成工序，该扭折形成工序使得毛细管上升，接着，至少实行一次使得毛细管朝与第二焊接点相反方向移动的逆向动作，在引线上形成扭折。
4.根据权利要求2所述的引线焊接方法，其特征在于：
在斜上升工序和第二焊接工序之间，包括扭折形成工序，该扭折形成工序使得毛细管上升，接着，至少实行一次使得毛细管朝与第二焊接点相反方向移动的逆向动作，在引线上形成扭折。
5.一种半导体装置，具有用引线连接第一焊接点和第二焊接点之间的引线环形状，其特征在于，具有通过以下工序形成的引线环形状：
第一焊接工序，由毛细管使得形成在引线前端的初始球接合在第一焊接点，形成压焊球及球颈；
球颈压塌工序，第一焊接工序后，使得毛细管上升，接着，使得毛细管向着与第二焊接点相反方向移动后，使得毛细管下降，用毛细管的第二焊接点侧的面部压塌第二焊接点侧的球颈；
推压工序，球颈压塌工序后，使得毛细管上升，接着，使得毛细管向着第二焊接点移动，直到毛细管的与第二焊接点相反侧的面部来到球颈上方，向着第二焊接点折返引线，此后，使得毛细管下降，用毛细管的与第二焊接点相反侧的面部推压折返在压塌的球颈上的引线侧面；
斜上升工序，推压工序后，使得毛细管向着第二焊接点朝斜上方移动；
第二焊接工序，斜上升工序后，使得毛细管上升，接着，使得毛细管朝着第二焊接点方向移动，通过将引线压焊在第二焊接点上接合。
6.根据权利要求5所述的半导体装置，其特征在于：
球颈压塌工序在第一焊接工序后反复多次实行以下连续动作：使得毛细管上升，接着，使得毛细管向着与第二焊接点相反方向移动后，使得毛细管下降，用毛细管的第二焊接点侧的面部压塌第二焊接点侧的球颈。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103464853A (zh) * 2013-09-12 2013-12-25 昆山奥德鲁自动化技术有限公司 一种半导体制冷片的导线焊接方法
CN103500715A (zh) * 2013-09-30 2014-01-08 中南大学 一种抗侧摆三维引线成弧方法
CN104813455A (zh) * 2012-11-16 2015-07-29 株式会社新川 引线接合装置以及半导体装置的制造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4625858B2 (ja) * 2008-09-10 2011-02-02 株式会社カイジョー ワイヤボンディング方法、ワイヤボンディング装置及びワイヤボンディング制御プログラム
JP2012004464A (ja) * 2010-06-18 2012-01-05 Toshiba Corp 半導体装置、半導体装置の製造方法及び半導体装置の製造装置
TWI518814B (zh) * 2013-04-15 2016-01-21 新川股份有限公司 半導體裝置以及半導體裝置的製造方法
US9093515B2 (en) 2013-07-17 2015-07-28 Freescale Semiconductor, Inc. Wire bonding capillary with working tip protrusion
US9082753B2 (en) * 2013-11-12 2015-07-14 Invensas Corporation Severing bond wire by kinking and twisting
JP6644352B2 (ja) * 2017-09-27 2020-02-12 日亜化学工業株式会社 半導体装置及びその製造方法
JP6824448B2 (ja) * 2018-02-07 2021-02-03 三菱電機株式会社 ウェッジツール、ボンディング装置、および、ボンディング検査方法
KR102621753B1 (ko) 2018-09-28 2024-01-05 삼성전자주식회사 본딩 와이어, 이를 포함하는 반도체 패키지, 및 와이어 본딩 방법
US11145620B2 (en) * 2019-03-05 2021-10-12 Asm Technology Singapore Pte Ltd Formation of bonding wire vertical interconnects

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019778A (ja) * 2003-06-27 2005-01-20 Shinkawa Ltd ワイヤボンディング方法
JP2005039192A (ja) * 2003-06-27 2005-02-10 Shinkawa Ltd 半導体装置及びワイヤボンディング方法
US20060163331A1 (en) * 2005-01-25 2006-07-27 Kulicke And Soffa Industries, Inc. Method and apparatus for forming a low profile wire loop
CN1815727A (zh) * 2005-01-11 2006-08-09 株式会社海上 引线回路，具有该引线回路的半导体器件以及引线接合方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0951011A (ja) 1995-08-10 1997-02-18 Tanaka Denshi Kogyo Kk 半導体チップのワイヤボンディング方法
JP3455092B2 (ja) * 1997-10-27 2003-10-06 株式会社新川 半導体装置及びワイヤボンディング方法
JP2000114304A (ja) 1998-10-08 2000-04-21 Shinkawa Ltd ワイヤボンディング方法
US7252811B2 (en) 2000-06-29 2007-08-07 University Of Louisville Low temperature synthesis of silicon fibers
JP2004172477A (ja) 2002-11-21 2004-06-17 Kaijo Corp ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法及び半導体製造装置
JP2005167178A (ja) * 2003-11-10 2005-06-23 Shinkawa Ltd 半導体装置及びワイヤボンディング方法
US7347352B2 (en) 2003-11-26 2008-03-25 Kulicke And Soffa Industries, Inc. Low loop height ball bonding method and apparatus
JP3946730B2 (ja) 2004-04-26 2007-07-18 株式会社カイジョー ボンディングワイヤのループ形状及びそのループ形状を備えた半導体装置並びにワイヤボンディング方法
JP4298665B2 (ja) * 2005-02-08 2009-07-22 株式会社新川 ワイヤボンディング方法
US20090020872A1 (en) * 2007-07-19 2009-01-22 Shinkawa Ltd. Wire bonding method and semiconductor device
JP4625858B2 (ja) * 2008-09-10 2011-02-02 株式会社カイジョー ワイヤボンディング方法、ワイヤボンディング装置及びワイヤボンディング制御プログラム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019778A (ja) * 2003-06-27 2005-01-20 Shinkawa Ltd ワイヤボンディング方法
JP2005039192A (ja) * 2003-06-27 2005-02-10 Shinkawa Ltd 半導体装置及びワイヤボンディング方法
CN1815727A (zh) * 2005-01-11 2006-08-09 株式会社海上 引线回路，具有该引线回路的半导体器件以及引线接合方法
US20060163331A1 (en) * 2005-01-25 2006-07-27 Kulicke And Soffa Industries, Inc. Method and apparatus for forming a low profile wire loop

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104813455A (zh) * 2012-11-16 2015-07-29 株式会社新川 引线接合装置以及半导体装置的制造方法
CN104813455B (zh) * 2012-11-16 2017-11-21 株式会社新川 引线接合装置以及半导体装置的制造方法
CN103464853A (zh) * 2013-09-12 2013-12-25 昆山奥德鲁自动化技术有限公司 一种半导体制冷片的导线焊接方法
CN103500715A (zh) * 2013-09-30 2014-01-08 中南大学 一种抗侧摆三维引线成弧方法
CN103500715B (zh) * 2013-09-30 2016-01-20 中南大学 一种抗侧摆三维引线成弧方法

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US20100207280A1 (en) 2010-08-19
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